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    • 5. 发明申请
    • SPUTTERING APPARATUS AND SPUTTERING METHOD
    • 溅射装置和喷射方法
    • US20130001075A1
    • 2013-01-03
    • US13634328
    • 2011-03-16
    • Naoki MorimotoMasahiko Ishida
    • Naoki MorimotoMasahiko Ishida
    • C23C14/34
    • H01J37/3438C23C14/34C23C14/345C23C14/3492C23C14/50C23C14/542H01J37/3405H01L21/6833
    • A sputtering apparatus includes: a vacuum chamber in which a target is to be disposed; a power supply to input power to the target; gas introduction device; exhaust device; and substrate holding device to hold a substrate to be processed. The substrate holding device includes: a chuck main body having positive and negative electrodes; a chuck plate having a rib portion capable of bringing a peripheral edge portion of the substrate into surface contact with the rib portion; and a multiplicity of supporting portions provided upright and arranged at predetermined intervals in an interior space surrounded by the rib portion; and a DC power supply to apply a direct voltage between the two electrodes. The sputtering apparatus suppresses a variation in film thickness among substrates.
    • 溅射装置包括:真空室,其中设置有靶; 用于向目标输入电力的电源; 气体引入装置; 排风装置; 以及用于保持待处理基板的基板保持装置。 基板保持装置包括:具有正极和负极的卡盘主体; 具有能够使基板的周缘部与肋部表面接触的肋部的卡盘板; 以及多个支撑部分,其设置成直立并以预定间隔布置在由所述肋部分包围的内部空间中; 以及在两个电极之间施加直流电压的直流电源。 溅射装置抑制基板之间的膜厚变化。