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1. 发明授权

US10741687B2 Trench DMOS transistor with reduced gate-to-drain capacitance 有权
公开(公告)号：US10741687B2
公开(公告)日：2020-08-11
申请号：US15645479
申请日：2017-07-10
申请人： National Semiconductor Corporation
发明人： Yaojian Leng , Richard Foote , Steven J. Adler
IPC分类号： H01L29/78 , H01L29/06 , H01L29/66 , H01L29/423
摘要： A trench DMOS transistor with a very low on-state drain-to-source resistance and a high gate-to-drain charge includes one or more floating islands that lie between the gate and drain to reduce the charge coupling between the gate and drain, and effectively lower the gate-to-drain capacitance.

2. 发明申请

US20190252893A1 BATTERY CHARGER WITH SEGMENTED POWER PATH SWITCH 审中-公开
公开(公告)号：US20190252893A1
公开(公告)日：2019-08-15
申请号：US16392340
申请日：2019-04-23
申请人： NATIONAL SEMICONDUCTOR CORPORATION
发明人： Sanjay Gurlahosur
IPC分类号： H02J7/00 , H02J7/04 , H02J7/08 , H02M1/08
CPC分类号： H02J7/0031 , H02J7/007 , H02J7/045 , H02J7/085 , H02M1/08
摘要： A battery charger circuit having a regulator controller configured to control the switching transistors of a switching voltage regulator. A power path switch is disposed intermediate an output of the switching voltage regulator and a terminal of a battery to be charged, with the power path switch including at least two transistor segments having common respective drain electrodes, common respective source electrodes and separate respective gate electrodes. A power path switch controller operates to sequentially turn ON the at least two transistor segments of the power path switch, preferably in the order of a decreasing ON resistance.

3. 发明授权

US10311825B2 Display driver 有权
公开(公告)号：US10311825B2
公开(公告)日：2019-06-04
申请号：US15044090
申请日：2016-02-15
申请人： National Semiconductor Corporation
发明人： Christopher Ludden , Imre Knausz
IPC分类号： H04N9/69 , G09G3/36
摘要： An LC display driver including a gamma reference circuit to generate N gamma-compensated reference voltages based on at least one pre-defined gamma curve divided into M regions defined by M+1 breakpoint voltages, each generated by a range-region DAC coupled to a subset of voltage taps of a range resistor string (some subsets overlapping). An output circuit generates the N gamma-compensated reference voltages, and includes a reference resistor string with N reference voltage taps, and M+1 breakpoint locations to receive respective breakpoint voltages, the N reference voltage taps divided into M subsets corresponding to the M regions of the gamma curve, each of the M subsets of reference voltage taps forming a voltage divider. N output selector circuits output a corresponding one of the N gamma-compensated reference voltages based on a respective reference voltage tap and the associated voltage divider.

4. 发明授权

US10141749B2 Resonance tuning 有权
公开(公告)号：US10141749B2
公开(公告)日：2018-11-27
申请号：US14954501
申请日：2015-11-30
申请人： National Semiconductor Corporation
发明人： Vijay N. Choudhary , Robert Loke
IPC分类号： H02J5/00 , H03J1/00
摘要： One heuristic for tuning a wireless power transfer device includes monitoring a circuit parameter while sweeping a power source frequency; identifying two frequencies related to local maxima of the circuit parameter values; estimating self-resonant frequency of an electromagnetically coupled device based on the two frequencies; determining a value for a tuning component of the wireless power transfer device such that the device self-resonant frequency equals the estimated coupled device self-resonant frequency; and adjusting the tuning component to the determined value.Another tuning heuristic includes monitoring a circuit parameter while sweeping the power source frequency; identifying two frequencies related to two local maximum for the values of the circuit parameter; determining a desired resonance frequency for the wireless power transfer device based on stored information; and adjusting the tuning component to a value that causes the wireless power transfer device when uncoupled to operate at or near the desired resonance frequency.

5. 发明授权

US09444284B2 Bi-directional wireless charger 有权
标题翻译：双向无线充电器
公开(公告)号：US09444284B2
公开(公告)日：2016-09-13
申请号：US14558424
申请日：2014-12-02
申请人： National Semiconductor Corporation
发明人： James E. Schuessler
IPC分类号： H02J7/00 , H02J7/02 , H01M10/46 , H02J5/00 , H02J17/00 , G01R31/36 , H02J7/35 , H01M10/44
CPC分类号： H02J7/02 , G01R31/3689 , H01M10/46 , H02J5/005 , H02J7/025 , H02J7/35 , H02J17/00 , H02J50/10 , H02J50/12 , H02J50/40 , H02J50/80
摘要： A bi-directional charging device includes a rechargeable battery, a coil coupled to the rechargeable battery, a selection mechanism that selectively causes power to be delivered from the coil to the battery and selectively causes power to be delivered from the battery to the coil, and a control mechanism. Upon determining that the coil is to provide power to the battery, the control mechanism causes the selection mechanism to selectively cause power to be delivered from the coil to the battery, and upon determining that the coil is to receive power from the battery, the control mechanism causes the selection mechanism to selectively cause power to be delivered from the battery to the coil.The bi-directional charging device includes a housing enclosing the rechargeable battery, the coil, the selection mechanism, and the control mechanism.
摘要翻译：双向充电装置包括封装可再充电电池，线圈，选择机构和控制机构的壳体。

6. 发明申请

US20160118822A1 BATTERY CHARGER WITH SEGMENTED POWER PATH SWITCH 审中-公开
公开(公告)号：US20160118822A1
公开(公告)日：2016-04-28
申请号：US14930519
申请日：2015-11-02
申请人： National Semiconductor Corporation
发明人： Sanjay Gurlahosur
IPC分类号： H02J7/00
CPC分类号： H02J7/0031 , H02J7/007 , H02J7/045 , H02J7/085 , H02M1/08
摘要： A battery charger circuit having a regulator controller configured to control the switching transistors of a switching voltage regulator. A power path switch is disposed intermediate an output of the switching voltage regulator and a terminal of a battery to be charged, with the power path switch including at least two transistor segments having common respective drain electrodes, common respective source electrodes and separate respective gate electrodes. A power path switch controller operates to sequentially turn ON the at least two transistor segments of the power path switch, preferably in the order of a decreasing ON resistance.

7. 发明申请

US20150188689A1 DATA SIGNAL TRANSCEIVER CIRCUITRY FOR PROVIDING SIMULTANEOUS BI-DIRECTIONAL COMMUNICATION VIA A COMMON CONDUCTOR PAIR 审中-公开
标题翻译：数据信号收发器电路，用于通过公共导体对提供同时的双向通信
公开(公告)号：US20150188689A1
公开(公告)日：2015-07-02
申请号：US14582911
申请日：2014-12-24
申请人： National Semiconductor Corporation
发明人： Vijaya G. Ceekala , Qingping Zheng , Min Du , Xin Liu , Chandrakumar R. Pathi
IPC分类号： H04L5/14 , H04L29/08
CPC分类号： H04L5/1415 , H04L5/1461 , H04L25/0276 , H04L25/0284 , H04L25/0296 , H04L25/0298 , H04L25/4904 , H04L67/12
摘要： Interface circuitry and method for transmitting and receiving downstream and upstream data signals simultaneously via a common conductor pair. The composite signal containing the downstream and upstream data signal components being conveyed by the common conductor pair is isolated, e.g., via signal filtering or buffering, and combined with an appropriately scaled inverse replica of the outgoing upstream data signal to subtract out upstream data signal components and thereby provide the downstream data signal substantially free of any upstream data signal components.
摘要翻译：用于经由公共导体对同时发送和接收下游和上游数据信号的接口电路和方法。包含由公共导体对传送的下游和上游数据信号分量的复合信号例如通过信号滤波或缓冲被隔离，并且与输出上行数据信号的适当缩放的反向副本相结合以减去上行数据信号分量从而提供基本上没有任何上行数据信号分量的下行数据信号。

8. 发明申请

US20150084577A1 BI-DIRECTIONAL WIRELESS CHARGER 审中-公开
标题翻译：双向无线充电器
公开(公告)号：US20150084577A1
公开(公告)日：2015-03-26
申请号：US14558424
申请日：2014-12-02
申请人： National Semiconductor Corporation
发明人： James E. Schuessler
IPC分类号： H02J7/02 , G01R31/36 , H02J7/35
CPC分类号： H02J7/02 , G01R31/3689 , H01M10/46 , H02J5/005 , H02J7/025 , H02J7/35 , H02J17/00 , H02J50/10 , H02J50/12 , H02J50/40 , H02J50/80
摘要： A bi-directional charging device includes a rechargeable battery, a coil coupled to the rechargeable battery, a selection mechanism that selectively causes power to be delivered from the coil to the battery and selectively causes power to be delivered from the battery to the coil, and a control mechanism. Upon determining that the coil is to provide power to the battery, the control mechanism causes the selection mechanism to selectively cause power to be delivered from the coil to the battery, and upon determining that the coil is to receive power from the battery, the control mechanism causes the selection mechanism to selectively cause power to be delivered. from the battery to the coil.The bi-directional charging device includes a housing enclosing the rechargeable battery, the coil, the selection mechanism, and the control mechanism.
摘要翻译：双向充电装置包括可再充电电池，耦合到可再充电电池的线圈，选择机构，其选择性地使电力从线圈传送到电池并且选择性地使电力从电池传送到线圈;以及一个控制机制。在确定线圈要向电池供电时，控制机构使得选择机构选择性地使电力从线圈传送到电池，并且在确定线圈要从电池接收电力时，控制器机构使得选择机构选择性地使功率传递。从电池到线圈。双向充电装置包括封装可再充电电池，线圈，选择机构和控制机构的壳体。

9. 发明申请

US20140312358A1 NORMALLY-OFF GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICES 审中-公开
标题翻译：基于氮化镓的半导体器件
公开(公告)号：US20140312358A1
公开(公告)日：2014-10-23
申请号：US14319490
申请日：2014-06-30
申请人： National Semiconductor Corporation
发明人： Jamal Ramdani
IPC分类号： H01L29/225 , H01L29/778
CPC分类号： H01L29/225 , H01L29/2003 , H01L29/66462 , H01L29/7786
摘要： A method includes forming a relaxed layer in a semiconductor device. The method also includes forming a tensile layer over the relaxed layer, where the tensile layer has tensile stress. The method further includes forming a compressive layer over the relaxed layer, where the compressive layer has compressive stress. The compressive layer has a piezoelectric polarization that is approximately equal to or greater than a spontaneous polarization in the relaxed, tensile, and compressive layers. The piezoelectric polarization in the compressive layer could be in an opposite direction than the spontaneous polarization in the compressive layer. The relaxed layer could include gallium nitride, the tensile layer could include aluminum gallium nitride, and the compressive layer could include aluminum indium gallium nitride.
摘要翻译：一种方法包括在半导体器件中形成松弛层。该方法还包括在松弛层上形成拉伸层，其中拉伸层具有拉伸应力。该方法还包括在松弛层上形成压缩层，其中压缩层具有压应力。压缩层具有大致等于或大于松弛，拉伸和压缩层中的自发极化的压电极化。压缩层中的压电极化可能与压缩层中的自发极化方向相反。松弛层可以包括氮化镓，拉伸层可以包括氮化镓铝，并且压缩层可以包括铝铟镓氮。

10. 发明申请

US20140094005A1 Enhancement-Mode GaN MOSFET with Low Leakage Current and Improved Reliability 审中-公开
标题翻译：具有低漏电流的增强型GaN MOSFET和改进的可靠性
公开(公告)号：US20140094005A1
公开(公告)日：2014-04-03
申请号：US14091606
申请日：2013-11-27
申请人： NATIONAL SEMICONDUCTOR CORPORATION
发明人： Jamal Ramdani
IPC分类号： H01L29/66 , H01L21/02
CPC分类号： H01L29/66431 , H01L21/02458 , H01L21/0254 , H01L21/28264 , H01L29/1054 , H01L29/2003 , H01L29/205 , H01L29/513 , H01L29/518 , H01L29/66462 , H01L29/66522 , H01L29/7787
摘要： An enhancement-mode GaN MOSFET with a low leakage current and an improved reliability is formed by utilizing a SiO2/Si3N4 gate insulation layer on an AlGaN (or InAlGaN) barrier layer. The Si3N4 portion of the SiO2/Si3N4 gate insulation layer significantly reduces the formation of interface states at the junction between the gate insulation layer and the barrier layer, while the SiO2 portion of the SiO2/Si3N4 gate insulation layer significantly reduces the leakage current.
摘要翻译：通过在AlGaN（或InAlGaN）阻挡层上利用SiO 2 / Si 3 N 4栅极绝缘层，形成具有低漏电流和提高的可靠性的增强型GaN MOSFET。 SiO 2 / Si 3 N 4栅极绝缘层的Si 3 N 4部分显着地减少了在栅极绝缘层和阻挡层之间的接合处的界面态的形成，而SiO 2 / Si 3 N 4栅极绝缘层的SiO 2部分显着降低了漏电流。

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