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1. 发明授权

US09083336B2 Non-volatile logic operation device 有权
标题翻译：非易失性逻辑运算器件
公开(公告)号：US09083336B2
公开(公告)日：2015-07-14
申请号：US13996522
申请日：2012-01-05
申请人： Shunsuke Fukami , Nobuyuki Ishiwata
发明人： Shunsuke Fukami , Nobuyuki Ishiwata
IPC分类号： H01L25/00 , G11C11/00 , H03K19/16 , H01L43/08 , H03K19/177
CPC分类号： H03K19/16 , H01L43/08 , H03K19/17724 , H03K19/17728
摘要： A non-volatile logic operation device includes an operation unit that is connected to a first input terminal, a second input terminal, and an output terminal, includes an operation layer, a first non-magnetic layer, and a reference layer, and outputs from the output terminal a result of a logic operation on signals applied at the first input terminal and the second input terminal, and a control unit that is connected to a third input terminal, and includes a control layer. The control unit is arranged in the vicinity of the operation unit.
摘要翻译：非易失性逻辑运算装置包括连接到第一输入端，第二输入端和输出端的操作单元，包括操作层，第一非磁性层和参考层，并从所述输出端子对在所述第一输入端子和所述第二输入端子处施加的信号进行逻辑运算的结果，以及连接到第三输入端子的控制单元，并且包括控制层。控制单元布置在操作单元的附近。

2. 发明授权

US08687414B2 Magnetic memory element and magnetic random access memory 有权
标题翻译：磁存储元件和磁性随机存取存储器
公开(公告)号：US08687414B2
公开(公告)日：2014-04-01
申请号：US13139607
申请日：2009-12-24
申请人： Kiyokazu Nagahara , Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Norikazu Ohshima
发明人： Kiyokazu Nagahara , Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Norikazu Ohshima
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228
摘要： A magnetic memory cell includes: a magnetization recording layer; and a magnetic tunneling junction section. The magnetization recording layer includes a ferromagnetic layer with perpendicular magnetic anisotropy. The magnetic tunneling junction section is used for reading information in the magnetization recording layer. The magnetization recording layer includes two domain wall moving areas.
摘要翻译：磁存储单元包括：磁化记录层; 和磁性隧道接合部分。磁化记录层包括具有垂直磁各向异性的铁磁层。磁性隧道结部分用于读取磁化记录层中的信息。磁化记录层包括两个畴壁移动区域。

3. 发明申请

US20130285700A1 NON-VOLATILE LOGIC OPERATION DEVICE 有权
标题翻译：非易失性逻辑操作装置
公开(公告)号：US20130285700A1
公开(公告)日：2013-10-31
申请号：US13996522
申请日：2012-01-05
申请人： Shunsuke Fukami , Nobuyuki Ishiwata
发明人： Shunsuke Fukami , Nobuyuki Ishiwata
IPC分类号： H03K19/16
CPC分类号： H03K19/16 , H01L43/08 , H03K19/17724 , H03K19/17728
摘要： A non-volatile logic operation device includes an operation unit that is connected to a first input terminal, a second input terminal, and an output terminal, includes an operation layer, a first non-magnetic layer, and a reference layer, and outputs from the output terminal a result of a logic operation on signals applied at the first input terminal and the second input terminal, and a control unit that is connected to a third input terminal, and includes a control layer. The control unit is arranged in the vicinity of the operation unit.
摘要翻译：非易失性逻辑运算装置包括连接到第一输入端，第二输入端和输出端的操作单元，包括操作层，第一非磁性层和参考层，并从所述输出端子对在所述第一输入端子和所述第二输入端子处施加的信号进行逻辑运算的结果，以及连接到第三输入端子的控制单元，并且包括控制层。控制单元布置在操作单元的附近。

4. 发明授权

US08537604B2 Magnetoresistance element, MRAM, and initialization method for magnetoresistance element 有权
标题翻译：磁阻元件，MRAM和磁阻元件的初始化方法
公开(公告)号：US08537604B2
公开(公告)日：2013-09-17
申请号：US13062764
申请日：2009-10-16
申请人： Tetsuhiro Suzuki , Shunsuke Fukami , Kiyokazu Nagahara , Norikazu Ohshima , Nobuyuki Ishiwata
发明人： Tetsuhiro Suzuki , Shunsuke Fukami , Kiyokazu Nagahara , Norikazu Ohshima , Nobuyuki Ishiwata
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C19/0808 , H01L27/228
摘要： A magnetoresistance element is provided with: a magnetization recording layer that is a ferromagnetic layer. The magnetization recording layer includes: a magnetization reversal region having a reversible magnetization; a first magnetization fixed region connected to a first boundary of the magnetization reversal region and having a magnetization direction fixed in a first direction; and a second magnetization fixed region connected to a second boundary of the magnetization reversal region and having a magnetization direction fixed in a second direction. At least one magnetization reversal facilitation structure which is a structure in which a magnetization is reversed more easily than the remaining portion is provided for a portion of the second magnetization fixed region.
摘要翻译：磁阻元件具有：作为铁磁层的磁化记录层。磁化记录层包括：具有可逆磁化强度的磁化反转区域; 第一磁化固定区域，其连接到所述磁化反转区域的第一边界并且具有沿第一方向固定的磁化方向; 以及连接到所述磁化反转区域的第二边界并且具有沿第二方向固定的磁化方向的第二磁化固定区域。对于第二磁化固定区域的一部分，提供了至少一个磁化反转促进结构，其是磁化反转比剩余部分更容易的结构。

5. 发明授权

US08503222B2 Non-volatile logic circuit 有权
标题翻译：非易失性逻辑电路
公开(公告)号：US08503222B2
公开(公告)日：2013-08-06
申请号：US13144480
申请日：2010-01-21
申请人： Tetsuhiro Suzuki , Shunsuke Fukami , Kiyokazu Nagahara , Nobuyuki Ishiwata , Tadahiko Sugibayashi , Noboru Sakimura , Ryusuke Nebashi
发明人： Tetsuhiro Suzuki , Shunsuke Fukami , Kiyokazu Nagahara , Nobuyuki Ishiwata , Tadahiko Sugibayashi , Noboru Sakimura , Ryusuke Nebashi
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C11/5607 , H01L43/08 , H03K19/1776 , H03K19/1778 , H03K19/18 , H03K19/20
摘要： A non-volatile logic circuit includes an input section, a control section and an output section. The input section has perpendicular magnetic anisotropy and has a ferromagnetic layer whose magnetization state is changeable. The control section includes a ferromagnetic layer. The output section is provided in a neighborhood of the input section and the control section and includes a magnetic tunnel junction element whose magnetization state is changeable. The magnetization state of the input section is changed based on the magnetization state. A magnetization state of the magnetic tunnel junction element of the output section which state is changed based on the magnetization state of the ferromagnetic material of the control section and the magnetization state of the ferromagnetic material of the input section.
摘要翻译：非易失性逻辑电路包括输入部分，控制部分和输出部分。输入部具有垂直的磁各向异性，并具有磁化状态可变的铁磁层。控制部分包括铁磁层。输出部分设置在输入部分和控制部分的附近，并且包括磁化状态可变的磁性隧道结元件。基于磁化状态改变输入部的磁化状态。输出部分的磁性隧道结元件的磁化状态基于控制部分的铁磁材料的磁化状态和输入部分的铁磁材料的磁化状态而改变。

6. 发明申请

US20130140660A1 MAGNETIC MEMORY DEVICE AND MAGNETIC MEMORY 有权
标题翻译：磁记忆装置和磁记忆
公开(公告)号：US20130140660A1
公开(公告)日：2013-06-06
申请号：US13806828
申请日：2011-06-16
申请人： Shunsuke Fukami , Tetsuhiro Suzuki , Kiyokazu Nagahara , Nobuyuki Ishiwata , Norikazu Ohshima
发明人： Shunsuke Fukami , Tetsuhiro Suzuki , Kiyokazu Nagahara , Nobuyuki Ishiwata , Norikazu Ohshima
IPC分类号： H01L43/02
CPC分类号： H01L43/02 , G11C11/14 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1675 , G11C19/0808 , H01L27/228 , H01L43/08
摘要： In a perpendicular magnetization domain wall motion MRAM in which the magnetizations of both ends of a magnetization free layer are pinned by magnetization pinned layers, the increase of a write current due to leakage magnetic field from the magnetization pinned layer is prevented. A first displacement is present between a first boundary line and a first vertical line, where a curve portion, which crosses a first magnetization free layer, of an outer circumferential line of a first magnetization pinned layer is the first boundary line, a segment which links a center of a magnetization free region and a center of a first magnetization pinned region is a first segment, and a segment, which is a vertical line of the first segment, and which comes in contact with the first boundary line is the first vertical line.
摘要翻译：在其中磁化自由层的两端的磁化被磁化固定层固定的垂直磁化畴壁运动MRAM中，防止了由于来自磁化固定层的泄漏磁场引起的写入电流的增加。在第一边界线和第一垂直线之间存在第一位移，其中穿过第一磁化固定层的外周线的第一磁化自由层的曲线部分是第一边界线，链段无磁化区域的中心和第一磁化固定区域的中心是第一段，作为第一段的垂直线并与第一边界线接触的段是第一垂直线。

7. 发明授权

US08363461B2 Magnetic random access memory, method of initializing magnetic random access memory and method of writing magnetic random access memory 有权
标题翻译：磁随机存取存储器，初始化磁随机存取存储器的方法和写入磁随机存取存储器的方法
公开(公告)号：US08363461B2
公开(公告)日：2013-01-29
申请号：US13003290
申请日：2009-06-26
申请人： Tetsuhiro Suzuki , Shunsuke Fukami , Kiyokazu Nagahara , Norikazu Ohshima , Nobuyuki Ishiwata
发明人： Tetsuhiro Suzuki , Shunsuke Fukami , Kiyokazu Nagahara , Norikazu Ohshima , Nobuyuki Ishiwata
IPC分类号： G11C11/00 , G11C11/14 , G11C11/15
CPC分类号： H01L27/228 , G11C11/15 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： A magnetic memory includes a magnetization recording layer, a first terminal, a second terminal, a magnetization pinned layer and a non-magnetic layer. The magnetization recording layer has a vertical magnetic anisotropy and includes a ferromagnetic layer. The first terminal is connected to one end of a first region in the magnetization recording layer. The second terminal is connected to the other end of the first region. The non-magnetic layer is arranged on the first region. The magnetization pinned layer is arranged on the non-magnetic layer and is located on the side opposite to the first region. The magnetization recording layer includes: a first extension portion located outside the first terminal in the magnetization recording layer; and a property changing structure that is arranged in the first extension portion and substantially changes a magnetization switching property of the magnetization recording layer.
摘要翻译：磁存储器包括磁化记录层，第一端子，第二端子，磁化固定层和非磁性层。磁化记录层具有垂直磁各向异性，并且包括铁磁层。第一端子连接到磁化记录层中的第一区域的一端。第二端子连接到第一区域的另一端。非磁性层布置在第一区域上。磁化钉扎层布置在非磁性层上并且位于与第一区域相对的一侧上。磁化记录层包括：位于磁化记录层中的第一端子外部的第一延伸部分; 以及布置在第一延伸部分中并且实质上改变磁化记录层的磁化转换特性的性质改变结构。

8. 发明授权

US08194436B2 Magnetic random access memory, write method therefor, and magnetoresistance effect element 有权
标题翻译：磁性随机存取存储器，其写入方法和磁阻效应元件
公开(公告)号：US08194436B2
公开(公告)日：2012-06-05
申请号：US12678538
申请日：2008-07-07
申请人： Shunsuke Fukami , Tetsuhiro Suzuki , Kiyokazu Nagahara , Norikazu Ohshima , Nobuyuki Ishiwata
发明人： Shunsuke Fukami , Tetsuhiro Suzuki , Kiyokazu Nagahara , Norikazu Ohshima , Nobuyuki Ishiwata
IPC分类号： G11C11/00 , G11C11/14 , G11C11/15
CPC分类号： B82Y10/00 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L29/82 , H01L43/08
摘要： A magnetic random access memory includes: a first ferromagnetic layer; an insulating layer provided adjacent to the first ferromagnetic layer; and a first magnetization pinned layer provided adjacent to the insulating layer on a side opposite to the first ferromagnetic layer. The first ferromagnetic layer includes a magnetization free region, a first magnetization pinned region, and a second magnetization pinned region. The magnetization free region has reversible magnetization, and overlaps with the second ferromagnetic layer. The first magnetization pinned region has first pinned magnetization, and is connected to a part of the magnetization free region. The second magnetization pinned region has second pinned magnetization, and is connected to a part of the magnetization free region. The first ferromagnetic layer has magnetic anisotropy in a direction perpendicular to a film surface. The first pinned magnetization and the second pinned magnetization are pinned antiparallel to each other in the direction perpendicular to the film surface.
摘要翻译：磁性随机存取存储器包括：第一铁磁层; 与所述第一铁磁层相邻设置的绝缘层; 以及在与第一铁磁层相反的一侧与绝缘层相邻设置的第一磁化固定层。第一铁磁层包括无磁化区域，第一磁化固定区域和第二磁化固定区域。无磁化区域具有可逆磁化强度，并与第二铁磁层重叠。第一磁化钉扎区域具有第一钉扎磁化，并且连接到无磁化区域的一部分。第二磁化钉扎区域具有第二钉扎磁化，并且连接到无磁化区域的一部分。第一铁磁层在垂直于膜表面的方向上具有磁各向异性。第一钉扎磁化和第二钉扎磁化在垂直于膜表面的方向上彼此反平行地被钉住。

9. 发明授权

US08154913B2 Magnetoresistance effect element and magnetic random access memory 有权
标题翻译：磁阻效应元件和磁性随机存取存储器
公开(公告)号：US08154913B2
公开(公告)日：2012-04-10
申请号：US12739855
申请日：2008-08-21
申请人： Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Norikazu Ohshima , Kiyokazu Nagahara
发明人： Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Norikazu Ohshima , Kiyokazu Nagahara
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228
摘要： A magnetoresistance effect element comprising: a first magnetization fixed layer whose magnetization direction is fixed; a first magnetization free layer whose magnetization direction is variable; a first nonmagnetic layer sandwiched between the first magnetization fixed layer and the first magnetization free layer; a second magnetization fixed layer whose magnetization direction is fixed; a second magnetization free layer whose magnetization direction is variable; and a second nonmagnetic layer sandwiched between the second magnetization fixed layer and the second magnetization free layer. The first magnetization fixed layer and the first magnetization free layer have perpendicular magnetic anisotropy, while the second magnetization fixed layer and the second magnetization free layer have in-plane magnetic anisotropy. The first magnetization free layer and the second magnetization free layer are magnetically coupled to each other. In a plane parallel to each layer, center of the second magnetization free layer is displaced from center of the first magnetization free layer.
摘要翻译：一种磁阻效应元件，包括：其磁化方向固定的第一磁化固定层; 磁化方向可变的第一磁化自由层; 夹在第一磁化固定层和第一磁化自由层之间的第一非磁性层; 磁化方向固定的第二磁化固定层; 磁化方向可变的第二磁化自由层; 以及夹在第二磁化固定层和第二磁化自由层之间的第二非磁性层。第一磁化固定层和第一磁化自由层具有垂直的磁各向异性，而第二磁化固定层和第二磁化自由层具有面内磁各向异性。第一磁化自由层和第二磁化自由层彼此磁耦合。在与每个层平行的平面中，第二磁化自由层的中心从第一磁化自由层的中心位移。

10. 发明授权

US08120127B2 Magnetic random access memory and method of manufacturing the same 有权
标题翻译：磁性随机存取存储器及其制造方法
公开(公告)号：US08120127B2
公开(公告)日：2012-02-21
申请号：US12670462
申请日：2008-07-07
申请人： Kiyokazu Nagahara , Shunsuke Fukami , Tetsuhiro Suzuki , Norikazu Ohshima , Nobuyuki Ishiwata
发明人： Kiyokazu Nagahara , Shunsuke Fukami , Tetsuhiro Suzuki , Norikazu Ohshima , Nobuyuki Ishiwata
IPC分类号： H01L29/78
CPC分类号： G11C11/14 , B82Y10/00 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A domain wall motion type MRAM 100 has: a magnetic recording layer 10 that is a ferromagnetic layer; and a magnetic coupling layer 20 that is a ferromagnetic layer whose magnetization direction is fixed. The magnetic recording layer 10 has: a first region 10-1; a second region 10-2; and a magnetization switching region 10-3 connecting between the first region 10-1 and the second region 10-2. The first region 10-1 is magnetically coupled to the magnetic coupling layer 20 and its magnetization direction is fixed in a first direction by the magnetic coupling layer 20. The second region 10-2 is not magnetically coupled to the magnetic coupling layer 20 and its magnetization direction is a second direction that is opposite to the first direction.
摘要翻译：畴壁运动型MRAM 100具有：作为铁磁层的磁记录层10; 以及作为其磁化方向固定的铁磁性层的磁耦合层20。磁记录层10具有：第一区域10-1; 第二区域10-2; 以及连接在第一区域10-1和第二区域10-2之间的磁化切换区域10-3。第一区域10-1磁耦合到磁耦合层20，并且其磁化方向通过磁耦合层20在第一方向固定。第二区域10-2不与磁耦合层20磁耦合，磁化方向是与第一方向相反的第二方向。

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