会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 5. 发明授权
    • Liquid crystal display device capable of compensating for a positioning
error between a drain line and a display electrode
    • 能够补偿排水管线与显示电极之间的定位误差的液晶显示装置
    • US5502583A
    • 1996-03-26
    • US242645
    • 1994-05-13
    • Osamu SukegawaHirohumi Ihara
    • Osamu SukegawaHirohumi Ihara
    • G02F1/1362G02F1/1343
    • G02F1/136213
    • In an active matrix liquid crystal display device incorporates a plurality of thin-film transistors, drain lines, and display electrodes of a conductive material. Compensating lines of the conductive material are wider than the drain lines and are formed on the drain lines simultaneously with the display electrodes. A predetermined distance is defined between the display electrode and the compensating line for each of the thin-film transistors. The predetermined distance is further defined between the display electrode for one of the thin-film transistors and the compensating line for an adjacent one of the thin-film transistors. The adjacent one of the thin-film transistors is nearer to the display electrode for the thin-film transistor in question rather than the drain line for the thin-film transistor in question. The compensating lines compensate for non-uniformity of capacitances between the drain line and the display electrode for the thin-film transistor in question and between the display electrode for the thin-film transistor in question and the drain line for the adjacent one of the thin-film transistors.
    • 在有源矩阵液晶显示装置中,包含导电材料的多个薄膜晶体管,漏极线和显示电极。 导电材料的补偿线宽于漏极线,并与显示电极同时形成在漏极线上。 在每个薄膜晶体管的显示电极和补偿线之间限定预定距离。 在薄膜晶体管之一的显示电极和相邻的薄膜晶体管的补偿线之间进一步限定预定距离。 相邻的薄膜晶体管更靠近所讨论的薄膜晶体管的显示电极,而不是所讨论的薄膜晶体管的漏极线。 补偿线补偿所讨论的薄膜晶体管的漏极线和显示电极之间以及所讨论的薄膜晶体管的显示电极与相邻的薄膜晶体管的漏极线之间的电容的不均匀性 薄膜晶体管。
    • 6. 发明授权
    • Optical pumping laser system
    • 光泵浦激光系统
    • US4683576A
    • 1987-07-28
    • US788720
    • 1985-10-17
    • Akira NagashimaOsamu Sukegawa
    • Akira NagashimaOsamu Sukegawa
    • H01S3/091H01S3/08H01S3/081H01S3/0915H01S3/094
    • H01S3/081H01S3/094
    • An optical pumping laser system is provided with a resonator suitable for a continuous oscillation having a relatively low gain. The laser system comprises an optical plate such as an etalon plate functioning as a Brewster plate with respect to a pumping beam and also functioning as a reflection mirror with respect to an oscillation laser beam, and a total reflection mirror spaced apart from the optical element so as to define a laser amplification region. The laser system further comprises an output mirror arranged relative to the optical plate to output the oscillation laser beam separated from the pumping beam by the optical element functioning as the reflection mirror. Thus, this laser system provides a uniform pumping of a laser medium having a relatively large cross-section, thus providing improved excitation efficiency and mode quality. Further, this laser system is configured such that the output mirror is not substantially exposed to the pumping beam, thus providing increased output power and improved stability of the entire system.
    • 光泵浦激光系统设置有适于具有相对较低增益的连续振荡的谐振器。 激光系统包括相对于泵浦光束用作布鲁斯特板的标准光板的光学板,并且还用作相对于振荡激光束的反射镜,以及与光学元件相隔开的全反射镜 以定义激光放大区域。 激光系统还包括相对于光学板布置的输出反射镜,以通过用作反射镜的光学元件输出与泵浦光束分离的振荡激光束。 因此,该激光系统提供具有相对较大横截面的激光介质的均匀泵浦,从而提供改善的激发效率和模式质量。 此外,该激光系统被配置为使得输出镜基本上不暴露于泵浦光束,从而提供增加的输出功率和改善整个系统的稳定性。
    • 8. 发明授权
    • Liquid crystal display apparatus having terminal protected from break
down
    • 液晶显示装置具有防止分解的端子
    • US5636329A
    • 1997-06-03
    • US493537
    • 1995-06-22
    • Osamu SukegawaTakahiko WatanabeWakahiko Kaneko
    • Osamu SukegawaTakahiko WatanabeWakahiko Kaneko
    • G02F1/1333G02F1/13G02F1/1345G02F1/1343
    • G02F1/13452
    • A lower layer metal wiring is led out from a display portion to a terminal portion provided to the periphery of the glass substrate and covered at the upper surface with an interlayer insulation film. An upper layer metal wiring formed on the interlayer insulation film is connected to the lower layer metal wiring by way of contact holes formed in the interlayer insulation film. The upper layer metal wiring is completely covered by the transparent conductive film. A protective insulation film is formed on the transparent conductive film, and an opening is made in to the protective insulation film in the terminal portion. In the terminal portion, copper foil wirings of a flexible wiring substrate are connected by way of an anisotropic conductive film. The upper layer metal wiring is removed at a portion not protected by the protective insulation film or the anisotropic conductive film.
    • 下层金属布线从显示部分引出到设置在玻璃基板周边的端子部分,并在上表面用层间绝缘膜覆盖。 通过在层间绝缘膜中形成的接触孔将形成在层间绝缘膜上的上层金属布线连接到下层金属布线。 上层金属布线被透明导电膜完全覆盖。 在透明导电膜上形成保护绝缘膜,并在端子部分形成保护绝缘膜。 在端子部分,柔性布线基板的铜箔布线通过各向异性导电膜连接。 在不被保护绝缘膜或各向异性导电膜保护的部分去除上层金属布线。
    • 9. 发明授权
    • Method of manufacturing a thin film transistor
    • 制造薄膜晶体管的方法
    • US4778773A
    • 1988-10-18
    • US60732
    • 1987-06-10
    • Osamu Sukegawa
    • Osamu Sukegawa
    • H01L27/12H01L21/027H01L21/336H01L29/45H01L29/78H01L29/786H01L21/265H01L21/44
    • H01L29/458H01L21/0274H01L29/78669Y10S438/949
    • A method of manufacturing a thin film transistor comprises the steps of forming a gate electrode on one surface of a transparent substrate, forming on the substrate an insulating layer and a semiconductor layer in the named order to cover the gate electrode, and depositing a positive photoresist layer on the semiconductor layer. Thereafter, the photoresist layer is exposed by irradiating from the other surface of the substrate so as to use the gate electrode as a mask. Therefore, if the positive photoresist layer is developed, the unexposed portion remains on the semiconductor layer to correspond to the gate electrode. Then, the semiconductor layer is etched using the remaining photoresist as a mask so as to form a semiconductor island on the insulating layer, and source and drain electrodes are formed on the semiconductor island.
    • 制造薄膜晶体管的方法包括以下步骤:在透明基板的一个表面上形成栅电极,以所述顺序在基板上形成绝缘层和半导体层以覆盖栅电极,以及沉积正性光致抗蚀剂 层。 此后,通过从基板的另一表面照射来曝光光致抗蚀剂层,以便使用栅电极作为掩模。 因此,如果正性光致抗蚀剂层显影,则未曝光部分保留在半导体层上以对应于栅电极。 然后,使用剩余的光致抗蚀剂作为掩模蚀刻半导体层,以在绝缘层上形成半导体岛,并且在半导体岛上形成源极和漏极。