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1. 发明授权

US5872021A Method for manufacturing LCD device capable of avoiding short circuit between signal line and pixel electrode 失效
公开(公告)号：US5872021A
公开(公告)日：1999-02-16
申请号：US364221
申请日：1994-12-27
申请人： Seiichi Matsumoto , Osamu Sukegawa , Wakahiko Kaneko , Hirofumi Ihara
发明人： Seiichi Matsumoto , Osamu Sukegawa , Wakahiko Kaneko , Hirofumi Ihara
IPC分类号： G02F1/136 , G02F1/1368 , G09F9/30 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/78 , H01L29/786
CPC分类号： G02F1/1368 , H01L27/1244
摘要： In a method for manufacturing an LCD device where a gate insulating layer is formed on an insulating substrate and a signal line pattern layer and a pixel electrode pattern layer are formed on a signal line forming area and a pixel electrode forming area, respectively, of the gate insulating layer, a part of the gate insulating layer between the signal line forming area and the pixel electrode forming area is etched.

2. 发明授权

US6114184A Method for manufacturing LCD device capable of avoiding short circuit between signal line and pixel electrode 失效
标题翻译：能够避免信号线与像素电极之间短路的液晶显示装置的制造方法
公开(公告)号：US6114184A
公开(公告)日：2000-09-05
申请号：US962299
申请日：1997-10-31
申请人： Seiichi Matsumoto , Osamu Sukegawa , Wakahiko Kaneko , Hirofumi Ihara
发明人： Seiichi Matsumoto , Osamu Sukegawa , Wakahiko Kaneko , Hirofumi Ihara
IPC分类号： G02F1/136 , G02F1/1368 , G09F9/30 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/78 , H01L29/786
CPC分类号： G02F1/1368 , H01L27/1244
摘要： In a method for manufacturing an LCD device where a gate insulating layer is formed on an insulating substrate and a signal line pattern layer and a pixel electrode pattern layer are formed on a signal line forming area and a pixel electrode forming area, respectively, of the gate insulating layer, a part of the gate insulating layer between the signal line forming area and the pixel electrode forming area is etched.
摘要翻译：在分别在信号线形成区域和像素电极形成区域上形成绝缘基板上的栅极绝缘层和信号线图案层和像素电极图案层的LCD器件的制造方法中，蚀刻栅极绝缘层，信号线形成区域和像素电极形成区域之间的栅极绝缘层的一部分。

3. 发明授权

US6028650A Liquid crystal display apparatus with uniform feed-through voltage in panel 失效
标题翻译：液晶显示装置在面板上具有均匀的馈通电压
公开(公告)号：US6028650A
公开(公告)日：2000-02-22
申请号：US896609
申请日：1997-07-18
申请人： Syoichi Kuroha , Takahiko Watanabe , Wakahiko Kaneko , Osamu Sukegawa
发明人： Syoichi Kuroha , Takahiko Watanabe , Wakahiko Kaneko , Osamu Sukegawa
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , G02F1/1343
CPC分类号： G02F1/136213
摘要： In a liquid crystal display apparatus including a plurality of gate lines, a plurality of drain lines, and a plurality of pixels each including a liquid crystal cell having a pixel electrode connected to a storage capacitor and a switching element connected between the liquid crystal cell and one of the drain lines, a gate of the switching element is connected to one of the gate lines, and a capacitance of the storage capacitor is changed in accordance with a distance between said pixel and an input end of a corresponding one of the gate lines.
摘要翻译：在包括多个栅极线，多个漏极线和多个像素的液晶显示装置中，每个像素包括具有连接到存储电容器的像素电极的液晶单元和连接在液晶单元和一个漏极线，开关元件的栅极连接到一条栅极线，并且存储电容器的电容根据所述像素与对应的一条栅极线的输入端之间的距离而改变。

4. 发明授权

US07088401B1 Liquid crystal display device with less pixel error and method of manufacturing the same 有权
标题翻译：具有较少像素误差的液晶显示装置及其制造方法
公开(公告)号：US07088401B1
公开(公告)日：2006-08-08
申请号：US09609169
申请日：2000-06-30
申请人： Hirofumi Ihara , Wakahiko Kaneko , Takayasu Iida
发明人： Hirofumi Ihara , Wakahiko Kaneko , Takayasu Iida
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1333 , H01L29/04
CPC分类号： G02F1/136213 , G02F1/136227 , H01L27/12 , H01L27/124
摘要： A liquid crystal display device includes first and second electrodes and an insulating film. The first electrode is formed on a substrate as one of two electrodes of an accumulation capacitor and applied with a voltage. The insulating film is formed on the first electrode to cover the first electrode. The second electrode is formed on the first electrode via the insulating film as the other electrode of the accumulation capacitor and including a first conductive film and a second conductive film formed on the first conductive film.
摘要翻译：液晶显示装置包括第一和第二电极和绝缘膜。第一电极形成在作为累积电容器的两个电极中的一个的衬底上并施加电压。绝缘膜形成在第一电极上以覆盖第一电极。第二电极通过作为积累电容器的另一个电极的绝缘膜形成在第一电极上，并且包括形成在第一导电膜上的第一导电膜和第二导电膜。

5. 发明授权

US5636329A Liquid crystal display apparatus having terminal protected from break down 失效
标题翻译：液晶显示装置具有防止分解的端子
公开(公告)号：US5636329A
公开(公告)日：1997-06-03
申请号：US493537
申请日：1995-06-22
申请人： Osamu Sukegawa , Takahiko Watanabe , Wakahiko Kaneko
发明人： Osamu Sukegawa , Takahiko Watanabe , Wakahiko Kaneko
IPC分类号： G02F1/1333 , G02F1/13 , G02F1/1345 , G02F1/1343
CPC分类号： G02F1/13452
摘要： A lower layer metal wiring is led out from a display portion to a terminal portion provided to the periphery of the glass substrate and covered at the upper surface with an interlayer insulation film. An upper layer metal wiring formed on the interlayer insulation film is connected to the lower layer metal wiring by way of contact holes formed in the interlayer insulation film. The upper layer metal wiring is completely covered by the transparent conductive film. A protective insulation film is formed on the transparent conductive film, and an opening is made in to the protective insulation film in the terminal portion. In the terminal portion, copper foil wirings of a flexible wiring substrate are connected by way of an anisotropic conductive film. The upper layer metal wiring is removed at a portion not protected by the protective insulation film or the anisotropic conductive film.
摘要翻译：下层金属布线从显示部分引出到设置在玻璃基板周边的端子部分，并在上表面用层间绝缘膜覆盖。通过在层间绝缘膜中形成的接触孔将形成在层间绝缘膜上的上层金属布线连接到下层金属布线。上层金属布线被透明导电膜完全覆盖。在透明导电膜上形成保护绝缘膜，并在端子部分形成保护绝缘膜。在端子部分，柔性布线基板的铜箔布线通过各向异性导电膜连接。在不被保护绝缘膜或各向异性导电膜保护的部分去除上层金属布线。

6. 发明授权

US06674093B1 Active matrix substrate and manufacturing method therefor 有权
标题翻译：有源矩阵基板及其制造方法
公开(公告)号：US06674093B1
公开(公告)日：2004-01-06
申请号：US09695321
申请日：2000-10-25
申请人： Hiroaki Tanaka , Hirotaka Yamaguchi , Wakahiko Kaneko , Michiaki Sakamoto , Satoshi Ihida , Takasuke Hayase , Tae Yoshikawa , Hiroshi Kanou
发明人： Hiroaki Tanaka , Hirotaka Yamaguchi , Wakahiko Kaneko , Michiaki Sakamoto , Satoshi Ihida , Takasuke Hayase , Tae Yoshikawa , Hiroshi Kanou
IPC分类号： H01L29786
CPC分类号： H01L27/12 , G02F1/134363 , H01L27/124 , H01L27/1248 , H01L27/1288
摘要： An active matrix substrate of a channel protection type having a gate electrode, a drain electrode and a pixel electrode isolated from one another from layer to layer by insulating films. The active matrix substrate is to be prepared by four masks. A gate electrode layer, a gate insulating film and an a-Si layer are processed to the same shape on a transparent insulating substrate to form a gate electrode layer (102 of FIG. 6) and a TFF area. A drain electrode layer (106 of FIG. 6) is formed by a first passivation film (105 of FIG. 6) via a first passivation film (105 of FIG. 6) formed as an upper layer. In a second passivation film (107 of FIG. 6) formed above it are bored an opening through the first and second passivation films and an opening through the second passivation film. A wiring connection layer is formed by ITO (108 of FIG. 6) provided as an uppermost layer. A storage capacitance unit, comprised of the first and second passivation films sandwiched between the gate electrode and an electrode layer formed as a co-layer with respect to the gate electrode, is provided in the pixel electrode.
摘要翻译：沟道保护型有源矩阵基板，具有通过绝缘膜从一层到另一层隔离的栅电极，漏电极和像素电极。有源矩阵基板由四个掩模制成。栅极电极层，栅极绝缘膜和a-Si层在透明绝缘基板上被加工成相同的形状以形成栅极电极层（图6的102）和TFF区域。经由形成为上层的第一钝化膜（图6的105）由第一钝化膜（图6的105）形成漏极电极层（图6的106）。在其上形成的第二钝化膜（图6的107）中，其穿过第一和第二钝化膜的开口以及通过第二钝化膜的开口。布线连接层由作为最上层设置的ITO（图6的108）形成。在像素电极中设置存储电容单元，该第一钝化膜和第二钝化膜夹在栅电极和形成为相对于栅电极的共层的电极层之间。

7. 发明授权

US08253898B2 Transfer material, and process for producing liquid crystal cell substrate and liquid crystal display device using the same 失效
标题翻译：转印材料，以及用于制造液晶单元基板的方法和使用其的液晶显示装置
公开(公告)号：US08253898B2
公开(公告)日：2012-08-28
申请号：US11887236
申请日：2006-03-29
申请人： Ichiro Amimori , Wakahiko Kaneko , Satomi Suzuki , Hideki Kaneiwa
发明人： Ichiro Amimori , Wakahiko Kaneko , Satomi Suzuki , Hideki Kaneiwa
IPC分类号： G02F1/1333 , G02F1/1335
CPC分类号： G02B5/3016
摘要： A novel transfer material is disclosed. The transfer material comprises, at least, a support, and, thereon, an optically uniaxial or biaxial anisotropic layer and a photosensitive polymer layer. A novel process for producing a liquid crystal cell substrate is also disclosed. The process comprises, at least, [1] laminating a transfer material as set forth in any one of claims 1 to 11 on a substrate; [2] removing the support from the transfer material laminated on the substrate; and [3] exposing the photosensitive polymer layer disposed on the substrate to light.
摘要翻译：公开了一种新的转印材料。转印材料至少包括载体，并且在其上具有光学单轴或双轴各向异性层和光敏聚合物层。还公开了一种制造液晶单元基板的新颖方法。该方法至少包括如下步骤：（1）将权利要求1至11中任一项所述的转印材料层压在基材上; [2]从层叠在基板上的转印材料除去支撑体; 和[3]将设置在基板上的光敏聚合物层曝光于光。

8. 发明授权

US07879634B2 Process for producing a liquid crystal cell substrate having a TFT driver element, a liquid crystal cell substrate, and liquid crystal display device 有权
标题翻译：具有TFT驱动元件，液晶单元基板和液晶显示装置的液晶单元基板的制造方法
公开(公告)号：US07879634B2
公开(公告)日：2011-02-01
申请号：US12066558
申请日：2006-09-15
申请人： Wakahiko Kaneko , Ichiro Amimori , Hideki Kaneiwa
发明人： Wakahiko Kaneko , Ichiro Amimori , Hideki Kaneiwa
IPC分类号： H01L21/00 , G02F1/1335
CPC分类号： G02F1/13363 , G02F2001/133565 , G02F2413/09
摘要： A process for easy production of a liquid crystal cell substrate having a TFT driver element which contributes to reducing viewing angle dependence of color of a liquid crystal display device is provided: a process using a transfer material, more preferably, a process which comprises the following steps [1] to [4] in this order: [1] transferring on a TFT substrate a transfer material having a photosensitive polymer layer and an optically anisotropic layer on a temporary support; [2] separating the temporary support from the transfer material on the TFT substrate; [3] subjecting the transfer material to light exposure on the TFT substrate; and [4] removing unnecessary parts of the photosensitive polymer layer and the optically anisotropic layer on the substrate.
摘要翻译：提供一种易于制造具有有助于降低液晶显示装置的颜色的视角依赖性的TFT驱动元件的液晶单元基板的方法：使用转印材料的方法，更优选包括以下步骤的方法步骤[1]至[4]：[1]在TFT基板上在临时支撑体上转印具有光敏聚合物层和光学各向异性层的转印材料; [2]在TFT基板上分离临时支撑体与转印材料; [3]使转印材料在TFT基板上曝光; 和[4]去除基片上感光聚合物层和光学各向异性层的不必要部分。

9. 发明授权

US06891196B2 Active matrix substrate and manufacturing method therefor 有权
标题翻译：有源矩阵基板及其制造方法
公开(公告)号：US06891196B2
公开(公告)日：2005-05-10
申请号：US10617035
申请日：2003-07-11
申请人： Hiroaki Tanaka , Hirotaka Yamaguchi , Wakahiko Kaneko , Michiaki Sakamoto , Satoshi Ihida , Takasuke Hayase , Tae Yoshikawa , Hiroshi Kanou
发明人： Hiroaki Tanaka , Hirotaka Yamaguchi , Wakahiko Kaneko , Michiaki Sakamoto , Satoshi Ihida , Takasuke Hayase , Tae Yoshikawa , Hiroshi Kanou
IPC分类号： G02F1/1345 , G02F1/1333 , G02F1/1343 , G02F1/136 , G02F1/1368 , G09F9/00 , G09F9/30 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786
CPC分类号： H01L27/12 , G02F1/134363 , H01L27/124 , H01L27/1248 , H01L27/1288
摘要： An active matrix substrate of a channel protection type having a gate electrode, a drain electrode and a pixel electrode is isolated in each layer by insulating films. The active matrix substrate is to be prepared by four masks. A gate electrode layer, a gate insulating film and an a-Si layer are processed to the same shape on a transparent insulating substrate to form a gate electrode layer and a TFF area. A drain electrode layer is formed by a first passivation film with the first passivation film formed as an upper layer. In a second passivation film, formed above the first passivation film, are bored a first opening through the first and second passivation films and a second opening through the second passivation film. A wiring connection layer is formed by ITO provided as an uppermost layer. A storage capacitance unit, including the first and second passivation films sandwiched between the gate electrode and an electrode layer formed as a co-layer with respect to the gate electrode, is connected to the pixel electrode.
摘要翻译：通过绝缘膜在每一层隔离具有栅电极，漏电极和像素电极的沟道保护型有源矩阵基板。有源矩阵基板由四个掩模制成。栅极电极层，栅极绝缘膜和a-Si层在透明绝缘基板上被加工成相同的形状以形成栅极电极层和TFF区域。漏极电极层由第一钝化膜形成，第一钝化膜形成为上层。在形成在第一钝化膜之上的第二钝化膜中，穿过第一和第二钝化膜的第一开口和通过第二钝化膜的第二开口。由设置为最上层的ITO形成布线连接层。夹持在栅电极和相对于栅电极形成为共层的电极层之间的第一和第二钝化膜的存储电容单元连接到像素电极。

10. 发明授权

US5677211A Method for manufacturing a thin film transistor 失效
标题翻译：薄膜晶体管的制造方法
公开(公告)号：US5677211A
公开(公告)日：1997-10-14
申请号：US626072
申请日：1996-04-01
申请人： Wakahiko Kaneko
发明人： Wakahiko Kaneko
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/30 , H01L21/336 , H01L29/786 , H01L21/86
CPC分类号： H01L29/66765 , H01L21/3003 , H01L29/78633 , H01L29/78669
摘要： In a method for manufacturing a thin film transistor, an upper portion of a channel region of an a--Si active layer is selectively etched using the source electrode and the drain electrode as a mask, so as to form a recess in the upper portion of the channel region of the active layer. Hydrogen plasma is irradiated to an exposed surface including a surface of the active layer, and succeedingly, an amorphous silicon film is deposited on the exposed surface including the surface of the active layer, and then patterned so as to form a light block film which also acts a protection layer.
摘要翻译：在制造薄膜晶体管的方法中，使用源电极和漏电极作为掩模来选择性地蚀刻a-Si活性层的沟道区的上部，以在上部形成凹部有源层的沟道区。将氢等离子体照射到包括有源层的表面的露出表面，接着，将非晶硅膜沉积在包括有源层的表面的暴露表面上，然后图案化以形成光阻挡膜，该阻挡膜也作为保护层。

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