会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明授权
    • Liquid crystal display apparatus having terminal protected from break
down
    • 液晶显示装置具有防止分解的端子
    • US5636329A
    • 1997-06-03
    • US493537
    • 1995-06-22
    • Osamu SukegawaTakahiko WatanabeWakahiko Kaneko
    • Osamu SukegawaTakahiko WatanabeWakahiko Kaneko
    • G02F1/1333G02F1/13G02F1/1345G02F1/1343
    • G02F1/13452
    • A lower layer metal wiring is led out from a display portion to a terminal portion provided to the periphery of the glass substrate and covered at the upper surface with an interlayer insulation film. An upper layer metal wiring formed on the interlayer insulation film is connected to the lower layer metal wiring by way of contact holes formed in the interlayer insulation film. The upper layer metal wiring is completely covered by the transparent conductive film. A protective insulation film is formed on the transparent conductive film, and an opening is made in to the protective insulation film in the terminal portion. In the terminal portion, copper foil wirings of a flexible wiring substrate are connected by way of an anisotropic conductive film. The upper layer metal wiring is removed at a portion not protected by the protective insulation film or the anisotropic conductive film.
    • 下层金属布线从显示部分引出到设置在玻璃基板周边的端子部分,并在上表面用层间绝缘膜覆盖。 通过在层间绝缘膜中形成的接触孔将形成在层间绝缘膜上的上层金属布线连接到下层金属布线。 上层金属布线被透明导电膜完全覆盖。 在透明导电膜上形成保护绝缘膜,并在端子部分形成保护绝缘膜。 在端子部分,柔性布线基板的铜箔布线通过各向异性导电膜连接。 在不被保护绝缘膜或各向异性导电膜保护的部分去除上层金属布线。
    • 5. 发明授权
    • Active matrix liquid crystal display panel having compensating capacitor
provided without lowering pixel aperture ratio
    • 具有补偿电容器的有源矩阵液晶显示面板不会降低像素孔径比
    • US5546205A
    • 1996-08-13
    • US249624
    • 1994-05-25
    • Osamu SukegawaHirofumi Ihara
    • Osamu SukegawaHirofumi Ihara
    • G02F1/1343G02F1/136G02F1/1362G02F1/1368H01L29/786G02F1/133
    • G02F1/136213
    • In an active matrix liquid crystal display panel, each pixel electrode is connected to a first drain bus line through a thin film transistor which is formed adjacent to an intersection between the first drain bus line and an orthogonal gate bus line. A compensating capacitor lower electrode extends from the gate bus line at a position near to a second drain bus line which is adjacent to the pixel electrode in such a manner that the pixel electrode is positioned between the first and second drain bus lines. A compensating capacitor upper electrode is formed integrally with a source electrode of the thin film transistor, to extend along the pixel electrode so as to overlap above the compensating capacitor lower electrode through an insulator layer. Thus, a compensating capacitor is formed of the compensating capacitor lower and upper electrodes and is connected to a gate-source capacitance of the thin film transistor. A change in the gate-source capacitance caused by the positional deviation in the alignment between a gate electrode and the source electrode of the thin film transistor can be compensated by the inverse change in the capacitance of the associated compensating capacitor, without decreasing the aperture ratio of the pixel.
    • 在有源矩阵液晶显示面板中,每个像素电极通过与第一排出母线和正交栅极总线之间的交点相邻形成的薄膜晶体管连接到第一漏极总线。 补偿电容器下电极在靠近与像素电极相邻的第二漏极总线的位置处从栅极总线延伸,使得像素电极位于第一和第二漏极总线之间。 补偿电容器上电极与薄膜晶体管的源电极一体形成,沿着像素电极延伸,以通过绝缘体层与补偿电容器下电极重叠。 因此,补偿电容器由补偿电容器下电极和上电极形成,并连接到薄膜晶体管的栅极 - 源极电容。 由薄膜晶体管的栅电极和源电极之间的对准位置偏移引起的栅源电容的变化可以通过相关的补偿电容器的电容的反向变化来补偿,而不会降低开口率 的像素。
    • 8. 发明授权
    • Method of manufacturing a thin film transistor
    • 制造薄膜晶体管的方法
    • US4778773A
    • 1988-10-18
    • US60732
    • 1987-06-10
    • Osamu Sukegawa
    • Osamu Sukegawa
    • H01L27/12H01L21/027H01L21/336H01L29/45H01L29/78H01L29/786H01L21/265H01L21/44
    • H01L29/458H01L21/0274H01L29/78669Y10S438/949
    • A method of manufacturing a thin film transistor comprises the steps of forming a gate electrode on one surface of a transparent substrate, forming on the substrate an insulating layer and a semiconductor layer in the named order to cover the gate electrode, and depositing a positive photoresist layer on the semiconductor layer. Thereafter, the photoresist layer is exposed by irradiating from the other surface of the substrate so as to use the gate electrode as a mask. Therefore, if the positive photoresist layer is developed, the unexposed portion remains on the semiconductor layer to correspond to the gate electrode. Then, the semiconductor layer is etched using the remaining photoresist as a mask so as to form a semiconductor island on the insulating layer, and source and drain electrodes are formed on the semiconductor island.
    • 制造薄膜晶体管的方法包括以下步骤:在透明基板的一个表面上形成栅电极,以所述顺序在基板上形成绝缘层和半导体层以覆盖栅电极,以及沉积正性光致抗蚀剂 层。 此后,通过从基板的另一表面照射来曝光光致抗蚀剂层,以便使用栅电极作为掩模。 因此,如果正性光致抗蚀剂层显影,则未曝光部分保留在半导体层上以对应于栅电极。 然后,使用剩余的光致抗蚀剂作为掩模蚀刻半导体层,以在绝缘层上形成半导体岛,并且在半导体岛上形成源极和漏极。