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1. 发明申请

US20180366871A1 SOCKET STRUCTURE 审中-公开
公开(公告)号：US20180366871A1
公开(公告)日：2018-12-20
申请号：US16007491
申请日：2018-06-13
申请人： Pei-Lin HUANG
发明人： Pei-Lin HUANG
IPC分类号： H01R13/627 , H01R13/11
摘要： A socket structure is disclosed, comprising a base seat combined with an external cover, in which the top plane of the external cover has a socket panel, and a high-low tilted positioning plate is installed inside the external cover, with a high edge of the positioning plate being abutted by a movable abutting element, and the bottom end of the abutting element includes an elastic body; also, a release element is placed between the socket panel and the positioning plate, and the abutting element can be driven to move by means of a push button control located on one side of the socket panel.

2. 发明申请

US20120214103A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICES WITH FINE PATTERNS 审中-公开
标题翻译：用精细图案制作半导体器件的方法
公开(公告)号：US20120214103A1
公开(公告)日：2012-08-23
申请号：US13030533
申请日：2011-02-18
申请人： Ming Kang Wei , Pei Lin Huang , Yi Ming Wang , Ying Chung Tseng
发明人： Ming Kang Wei , Pei Lin Huang , Yi Ming Wang , Ying Chung Tseng
IPC分类号： G03F7/20
CPC分类号： H01L21/31144 , G03F7/094 , G03F7/095 , H01L21/0274
摘要： A method for fabricating semiconductor devices with fine patterns includes the steps of providing a semiconductor substrate, forming a first photoresist layer on the semiconductor substrate, forming a second photoresist layer on the first photoresist layer, and performing an exposing process to change the state of at least one first portion of the first photoresist layer and the state of at least one second portion of the second photoresist layer. The conventional double patterning technique requires that the exposure processes be performed twice, which requires very precise alignment between the two exposure processes. In contrast, the embodiment of the present invention can perform the double patterning process with only one exposure process without requiring the precise alignment between the two exposure processes.
摘要翻译：用于制造具有精细图案的半导体器件的方法包括以下步骤：提供半导体衬底，在半导体衬底上形成第一光致抗蚀剂层，在第一光致抗蚀剂层上形成第二光致抗蚀剂层，以及执行曝光过程以改变第一光致抗蚀剂层的至少一个第一部分和第二光致抗蚀剂层的至少一个第二部分的状态。传统的双重图案化技术要求曝光过程进行两次，这需要两次曝光过程之间非常精确的对准。相反，本发明的实施例可以仅用一次曝光工艺进行双重图案化处理，而不需要两次曝光过程之间的精确对准。

3. 发明申请

US20110244395A1 APPARATUS AND METHOD FOR HAZE CONTROL IN A SEMICONDUCTOR PROCESS 审中-公开
标题翻译：一种半导体工艺中的雾化控制装置和方法
公开(公告)号：US20110244395A1
公开(公告)日：2011-10-06
申请号：US12754613
申请日：2010-04-06
申请人： Pei-Lin Huang , Yi-Ming Wang , Chun-Yen Huang
发明人： Pei-Lin Huang , Yi-Ming Wang , Chun-Yen Huang
IPC分类号： G03F7/20 , G03B27/42
CPC分类号： G03F7/70916 , G03F1/38
摘要： A method for haze control in a semiconductor process, includes: providing an exposure tool with a photocatalyzer coating inside and exposing a wafer in the exposure tool in the presence of activation of the photocatalyzer coating. The photocatalyzer coating may be formed within an opaque region of a reticle.
摘要翻译：一种在半导体工艺中雾度控制的方法，包括：在光催化剂涂层的活化存在下，向曝光工具提供内部的光催化剂涂层并暴露于曝光工具中的晶片。光催化剂涂层可以形成在掩模版的不透明区域内。

4. 发明申请

US20100227069A1 APPARATUS FOR REDUCING COST OF DEVELOPER AND THE METHOD THEREOF 审中-公开
标题翻译：降低开发商成本的方法及其方法
公开(公告)号：US20100227069A1
公开(公告)日：2010-09-09
申请号：US12500995
申请日：2009-07-10
申请人： Chiang-Lin Shih , Pei-Lin Huang , Ying-Chung Tseng
发明人： Chiang-Lin Shih , Pei-Lin Huang , Ying-Chung Tseng
IPC分类号： B05D3/12 , B05D3/00 , B05C11/00
CPC分类号： H01L21/6715 , G03F7/3014 , G03F7/3021
摘要： An apparatus for homogenizing the developer concentration on the wafer and reducing the developer cost and the method thereof are provided in the present invention. The developer is provided on the wafer which then is spun to distribute the developer on the wafer. Next, the mechanical turbulence of the developer is produced on the wafer by the turbulence device or the mega-sonic vibrator. The apparatus is able to improve the uniformity of developer concentration, and the developer consumption is reduced.
摘要翻译：在本发明中提供了用于使晶片上的显影剂浓度均匀化并降低显影剂成本的装置及其方法。将显影剂提供在晶片上，然后旋转以将显影剂分布在晶片上。接下来，通过湍流装置或超声波振动器在晶片上产生显影剂的机械湍流。该装置能够提高显影剂浓度的均匀性，并且降低显影剂消耗。

5. 发明授权

US07675078B2 Pixel structure 有权
标题翻译：像素结构
公开(公告)号：US07675078B2
公开(公告)日：2010-03-09
申请号：US11162528
申请日：2005-09-14
申请人： Liang-Yuan Wang , Chih-Kwang Tzen , Pei-Lin Huang , Yi-Lung Kao , Ya-Ping Tsai , Shuenn-Jiun Tang
发明人： Liang-Yuan Wang , Chih-Kwang Tzen , Pei-Lin Huang , Yi-Lung Kao , Ya-Ping Tsai , Shuenn-Jiun Tang
IPC分类号： H01L31/0216 , H01L31/0232
CPC分类号： H01L51/5265 , H01L27/3244
摘要： A pixel structure including a control unit, an organic electro-luminescent (OEL) unit, and a filter structure is provided. The control unit is disposed on a substrate and is driven by a scan line and a data line. The OEL unit is disposed on the substrate, and includes a transparent electrode, a light-emitting layer, and a metal electrode. The transparent electrode is electrically connected with the control unit, and the light-emitting layer and the metal electrode are sequentially placed on the transparent electrode. The filter structure is sandwiched between the substrate and the OEL unit, and the filter structure includes a plurality of the first and second dielectric layers. The first and second dielectric layers are alternately stacked, and the refractive index of the first dielectric layers is different from that of the second dielectric layers.
摘要翻译：提供了包括控制单元，有机电致发光（OEL）单元和滤波器结构的像素结构。控制单元设置在基板上并由扫描线和数据线驱动。 OEL单元设置在基板上，并且包括透明电极，发光层和金属电极。透明电极与控制单元电连接，并且发光层和金属电极依次放置在透明电极上。过滤器结构被夹在基板和OEL单元之间，并且过滤器结构包括多个第一和第二电介质层。第一和第二电介质层交替层叠，并且第一电介质层的折射率不同于第二电介质层的折射率。

6. 发明申请

US20120280949A1 TOUCH PEN 审中-公开
标题翻译：触摸笔
公开(公告)号：US20120280949A1
公开(公告)日：2012-11-08
申请号：US13462560
申请日：2012-05-02
申请人： Pei-Lin HUANG
发明人： Pei-Lin HUANG
IPC分类号： G06F3/033
CPC分类号： G02B27/20 , G06F3/03542 , G06F3/03545
摘要： A touch pen comprises a barrel, a laser module, a touch head and batteries: the barrel with a hollow interior which is separated into a barrel part and a necking nib part; the laser module which is disposed in the barrel and close to the nib part for generation of a laser beam as one pointer; the touch head featuring conductivity, covering the nib part and provided with a penetrating optical channel for a laser beam; the batteries held in the barrel part and supplying electricity necessary to the laser module; the touch pen is applicable to operation of a capacitive touch panel and regarded as one pointer projecting a laser spot.
摘要翻译：触摸笔包括镜筒，激光模块，触摸头和电池：具有中空内部的镜筒，其分离成镜筒部分和颈缩笔尖部分; 所述激光模块设置在所述镜筒中并且靠近所述笔尖部分以产生作为指针的激光束; 触摸头具有导电性，覆盖笔尖部分，并具有用于激光束的穿透光通道; 电池保持在筒体中并供应激光模块所需的电力; 触摸笔适用于电容式触摸屏的操作，并被认为是投射激光点的一个指针。

7. 发明授权

US08142086B2 Semiconductor manufacturing process 有权
标题翻译：半导体制造工艺
公开(公告)号：US08142086B2
公开(公告)日：2012-03-27
申请号：US12907035
申请日：2010-10-19
申请人： Pei-Lin Huang , Yi-Ming Wang , Chun-Yen Huang
发明人： Pei-Lin Huang , Yi-Ming Wang , Chun-Yen Huang
IPC分类号： G03D5/00
CPC分类号： G03D5/00
摘要： A semiconductor manufacturing process is provided. First, a wafer with a material layer and an exposed photoresist layer formed thereon is provided, wherein the wafer has a center area and an edge area. Thereafter, the property of the exposed photoresist layer is varied, so as to make a critical dimension of the exposed photoresist layer in the center area different from that of the same in the edge area. After the edge property of the exposed photoresist layer is varied, an etching process is performed to the wafer by using the exposed photoresist layer as a mask, so as to make a patterned material layer having a uniform critical dimension formed on the wafer.
摘要翻译：提供半导体制造工艺。首先，提供其上形成有材料层和曝光的光致抗蚀剂层的晶片，其中晶片具有中心区域和边缘区域。此后，暴露的光致抗蚀剂层的性质是变化的，以便使得在边缘区域中的不同于中心区域的曝光光致抗蚀剂层的临界尺寸不同。在暴露的光致抗蚀剂层的边缘性质改变之后，通过使用暴露的光致抗蚀剂层作为掩模对晶片进行蚀刻处理，以便在晶片上形成具有均匀临界尺寸的图案化材料层。

8. 发明授权

US08113850B2 Computer 失效
标题翻译：电脑
公开(公告)号：US08113850B2
公开(公告)日：2012-02-14
申请号：US12641222
申请日：2009-12-17
申请人： Tsung-Kuel Liao , Te-Chung Kuan , Pei-Lin Huang
发明人： Tsung-Kuel Liao , Te-Chung Kuan , Pei-Lin Huang
IPC分类号： H01R12/00
CPC分类号： H01R12/737 , G06F1/185
摘要： A computer includes an expansion card, a mother board and a connector. The mother board includes an expansion slot thereon. The expansion slot corresponds to the expansion card. The connector connects the expansion card and the expansion slot.
摘要翻译：计算机包括扩展卡，母板和连接器。母板在其上包括一个扩展槽。扩展槽对应扩展卡。连接器连接扩展卡和扩展槽。

9. 发明申请

US20110250540A1 SEMICONDUCTOR LITHOGRAPHY PROCESS 有权
公开(公告)号：US20110250540A1
公开(公告)日：2011-10-13
申请号：US12758043
申请日：2010-04-12
申请人： Pei-Lin Huang , Chun-Yen Huang , Yi-Ming Wang
发明人： Pei-Lin Huang , Chun-Yen Huang , Yi-Ming Wang
IPC分类号： G03F7/20
CPC分类号： G03F7/2022 , G03F7/2028 , G03F7/70425 , G03F7/70466 , Y10S430/143
摘要： A semiconductor lithography process. A photoresist film is coated on a substrate. The photoresist film is subjected to a flood exposure to blanket expose the photoresist film across the substrate to a first radiation with a relatively lower dosage. The photoresist film is then subjected to a main exposure using a photomask to expose the photoresist film in a step and scan manner to a second radiation with a relatively higher dosage. After baking, the photoresist film is developed.
摘要翻译：半导体光刻工艺。将光致抗蚀剂膜涂覆在基材上。对光致抗蚀剂膜进行暴露曝光，以将光致抗蚀剂薄膜穿过衬底暴露于具有较低剂量的第一辐射。然后使用光掩模对光致抗蚀剂膜进行主曝光，以一步一步地将光致抗蚀剂膜曝光，并以相对较高的剂量将其扫描到第二次辐射。烘烤后，显影光致抗蚀剂膜。

10. 发明申请

US20110151683A1 COMPUTER 失效
标题翻译：电脑
公开(公告)号：US20110151683A1
公开(公告)日：2011-06-23
申请号：US12641222
申请日：2009-12-17
申请人： TSUNG-KUEL LIAO , TE-CHUNG KUAN , PEI-LIN HUANG
发明人： TSUNG-KUEL LIAO , TE-CHUNG KUAN , PEI-LIN HUANG
IPC分类号： H01R12/00
CPC分类号： H01R12/737 , G06F1/185
摘要： A computer includes an expansion card, a mother board and a connector. The mother board includes an expansion slot thereon. The expansion slot corresponds to the expansion card. The connector connects the expansion card and the expansion slot.
摘要翻译：计算机包括扩展卡，母板和连接器。母板在其上包括一个扩展槽。扩展槽对应扩展卡。连接器连接扩展卡和扩展槽。

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