会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明授权
    • Power supply control circuit and method for sensing voltage in the power supply control circuit
    • 电源控制电路和电源控制电路中感应电压的方法
    • US08374001B2
    • 2013-02-12
    • US12589693
    • 2009-10-27
    • Chun-Yen HuangChia-Chuan Liu
    • Chun-Yen HuangChia-Chuan Liu
    • H02M3/335
    • H02M3/33507H02M3/33523
    • The present invention discloses a power supply control circuit, the power supply providing an output voltage to an output terminal from an input terminal through a transformer having a primary winding and a secondary winding, the power supply control circuit comprising: a power switch electrically connected with the primary winding; a switch control circuit controlling the power switch; and a sensing circuit supplying an output signal to the switch control circuit according to voltage signals obtained from two sides of the primary winding, wherein the sensing circuit includes a setting circuit for deciding the output voltage according to a reference signal. The present invention also relates to a voltage sensing method in the power supply control circuit.
    • 本发明公开了一种电源控制电路,所述电源通过具有初级绕组和次级绕组的变压器从输入端子向输出端子提供输出电压,所述电源控制电路包括:电源开关,电连接到 初级绕组; 控制电源开关的开关控制电路; 以及感测电路,根据从初级绕组的两侧获得的电压信号向开关控制电路提供输出信号,其中感测电路包括用于根据参考信号确定输出电压的设置电路。 本发明还涉及电源控制电路中的电压检测方法。
    • 4. 发明授权
    • Apparatus for semiconductor manufacturing process
    • 半导体制造工艺装置
    • US07845868B1
    • 2010-12-07
    • US12555811
    • 2009-09-09
    • Pei-Lin HuangYi-Ming WangChun-Yen Huang
    • Pei-Lin HuangYi-Ming WangChun-Yen Huang
    • G03D5/00
    • G03D5/00
    • A semiconductor manufacturing process is provided. First, a wafer with a material layer and an exposed photoresist layer formed thereon is provided, wherein the wafer has a center area and an edge area. Thereafter, the property of the exposed photoresist layer is varied, so as to make a critical dimension of the exposed photoresist layer in the center area different from that of the same in the edge area. After the edge property of the exposed photoresist layer is varied, an etching process is performed to the wafer by using the exposed photoresist layer as a mask, so as to make a patterned material layer having a uniform critical dimension formed on the wafer.
    • 提供半导体制造工艺。 首先,提供其上形成有材料层和曝光的光致抗蚀剂层的晶片,其中晶片具有中心区域和边缘区域。 此后,暴露的光致抗蚀剂层的性质是变化的,以便使得在边缘区域中的不同于中心区域的曝光光致抗蚀剂层的临界尺寸不同。 在暴露的光致抗蚀剂层的边缘性质改变之后,通过使用暴露的光致抗蚀剂层作为掩模对晶片进行蚀刻处理,以便在晶片上形成具有均匀临界尺寸的图案化材料层。