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    • 6. 发明申请
    • TECHNIQUE FOR FORMING THE DEEP DOPED COLUMNS IN SUPERJUNCTION
    • 用于形成超级深孔的技术
    • US20090023260A9
    • 2009-01-22
    • US11343329
    • 2006-01-31
    • Richard Blanchard
    • Richard Blanchard
    • H01L21/336
    • H01L27/088H01L21/26586H01L29/0634H01L29/0653H01L29/0696H01L29/1095H01L29/66712H01L29/7802H01L29/7811
    • A method of manufacturing a semiconductor device is disclosed and starts with a semiconductor substrate having a heavily doped N region at the bottom main surface and having a lightly doped N region at the top main surface. There are a plurality of trenches in the substrate, with each trench having a first extending portion extending from the top main surface towards the heavily doped region. Each trench has two sidewall surfaces in parallel alignment with each other. A blocking layer is formed on the sidewalls and the bottom of each trench. Then a P type dopant is obliquely implanted into the sidewall surfaces to form P type doped regions. The blocking layer is then removed. The bottom of the trenches is then etched to remove any implanted P type dopants. The implants are diffused and the trenches are filled.
    • 公开了一种制造半导体器件的方法,并且从在底部主表面上具有重掺杂N区并在顶部主表面上具有轻掺杂N区的半导体衬底开始。 衬底中存在多个沟槽,每个沟槽具有从顶部主表面朝向重掺杂区域延伸的第一延伸部分。 每个沟槽具有彼此平行对准的两个侧壁表面。 在每个沟槽的侧壁和底部上形成阻挡层。 然后将P型掺杂剂倾斜地注入到侧壁表面中以形成P型掺杂区域。 然后去除阻挡层。 然后蚀刻沟槽的底部以去除任何植入的P型掺杂剂。 植入物被扩散并且沟槽被填充。
    • 8. 发明申请
    • Isolated vertical power device structure with both N-doped and P-doped trenches
    • 具有N掺杂和P掺杂沟槽的隔离垂直功率器件结构
    • US20070117360A1
    • 2007-05-24
    • US11284979
    • 2005-11-21
    • Richard Blanchard
    • Richard Blanchard
    • H01L21/04
    • H01L29/74H01L29/0634H01L29/0657H01L29/0692H01L29/0834H01L29/66363H01L29/87
    • A method for manufacturing an isolated vertical power device includes forming, in a back surface of a first conductivity type substrate, back isolation wall trenches that surround a conduction region of the device. In a front surface of the substrate, front isolation wall trenches are formed around the conduction region. Thereafter, a film containing a second type dopant is deposited in the front and back isolation wall trenches. In the conduction region on the back surface, conduction region trenches are formed inside the perimeter of the isolation wall trenches. A first type dopant is deposited in the conduction region trenches. The dopants are diffused from the conduction region trenches and isolation wall trenches to form a first conductivity type conduction region structure and a second conductivity type isolation wall.
    • 一种用于制造隔离垂直功率器件的方法包括在第一导电类型衬底的背表面中形成围绕器件的导电区域的后隔离壁沟槽。 在基板的前表面上,在导电区域周围形成前隔离壁沟槽。 此后,在前后隔离壁沟槽中沉积含有第二种掺杂剂的膜。 在背表面的导电区域中,导电区沟槽形成在隔离壁沟槽周边的内部。 第一种掺杂剂沉积在导电区沟槽中。 掺杂剂从导电区沟槽和隔离壁沟槽扩散以形成第一导电类型的导电区域结构和第二导电型隔离壁。
    • 9. 发明申请
    • Power semiconductor device having a voltage sustaining region that includes doped columns formed with a single ion implantation step
    • 具有包括由单离子注入步骤形成的掺杂列的电压维持区的功率半导体器件
    • US20060267083A1
    • 2006-11-30
    • US11496233
    • 2006-07-31
    • Richard Blanchard
    • Richard Blanchard
    • H01L29/76
    • H01L29/7802H01L29/0634H01L29/0649H01L29/1095H01L29/66712
    • A method is provided for forming a power semiconductor device. The method begins by providing a substrate of a first conductivity type and forming a voltage sustaining region on the substrate. The voltage sustaiing region is formed in the following manner. First, an epitaxial layer is deposited on the substrate. The epitaxial layer has a first or a second conductivity type. Next, at least one terraced trench is formed in the epitaxial layer. The terraced trench has a trench bottom and a plurality of portions that differ in width to define at least one annular ledge therebetween. A barrier material is deposited along the walls and bottom of the trench. A dopant of a conductivity type opposite to the conductivity type of the epitaxial layer is implanted through the barrier material lining the annular ledge and at the trench bottom and into adjacent portions of the epitaxial layer to respectively form at least one annular doped region and another doped region. The dopant is diffused in the annular doped region and the another doped region to cause the regions to overlap one another, whereby a continuous doped column is formed in the epitaxial layer. A filler material is deposited in the terraced trench to substantially fill the terraced trench. Finally, at least one region of conductivity type opposite to the conductivity type of the epitaxial layer is formed over the voltage sustaining region to define a junction therebetween.
    • 提供了形成功率半导体器件的方法。 该方法开始于提供第一导电类型的衬底并在衬底上形成电压维持区域。 电压维持区域以如下方式形成。 首先,在衬底上沉积外延层。 外延层具有第一或第二导电类型。 接下来,在外延层中形成至少一个梯形沟槽。 梯形沟槽具有沟槽底部和宽度不同以在其间限定至少一个环形凸缘的多个部分。 沿着沟槽的壁和底部沉积阻挡材料。 通过阻挡材料注入与外延层的导电类型相反的导电类型的掺杂剂,并且在沟槽底部和沟槽底部以及外延层的相邻部分中分别形成至少一个环形掺杂区域和另一个掺杂 地区。 掺杂剂扩散在环形掺杂区域和另一个掺杂区域中,以使区域彼此重叠,从而在外延层中形成连续掺杂的柱。 填充材料沉积在梯形沟槽中以基本上填充梯形沟槽。 最后,在电压维持区域上形成与外延层的导电类型相反的导电类型的至少一个区域,以限定其间的连接。