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1. 发明授权

US10242720B2 Dual sensing current latched sense amplifier 有权
公开(公告)号：US10242720B2
公开(公告)日：2019-03-26
申请号：US12731623
申请日：2010-03-25
申请人： Nan Chen , Ritu Chaba
发明人： Nan Chen , Ritu Chaba
IPC分类号： G11C7/00 , G11C7/06 , G11C7/08 , G11C7/12
摘要： A sense amplifier and method thereof are provided. The sense amplifier includes first and second transistors coupled to first and second bit lines, respectively. The first and second transistors are configured to connect the first and second bit lines to a differential amplifier during a first state (e.g., when a differential voltage is present on the first and second bit lines and prior to a sense signal transition) and to isolate the first and second bit lines from the differential amplifier during a second state (e.g., after the sense signal transition). The sense amplifier further includes a third transistor configured to deactivate the differential amplifier during the first state and configured to activate the differential amplifier during the second state.

2. 发明授权

US09916904B2 Reducing leakage current in a memory device 有权
公开(公告)号：US09916904B2
公开(公告)日：2018-03-13
申请号：US12364105
申请日：2009-02-02
申请人： Nan Chen , Mehdi Hamidi Sani , Ritu Chaba
发明人： Nan Chen , Mehdi Hamidi Sani , Ritu Chaba
IPC分类号： G11C7/12 , G11C17/18 , G11C5/14
CPC分类号： G11C17/18 , G11C5/14 , G11C5/147 , G11C7/12
摘要： Memory devices and methods of reducing leakage current therein are disclosed. The memory device includes a memory core array including a plurality of bitlines, and peripheral logic configured to interface with the memory core array. The memory device further includes a footswitch configured to isolate the peripheral logic from a ground voltage, and a headswitch configured to isolate a precharge current path from the plurality of bit lines of the memory core array. Leakage current within the memory device may be reduced via the isolation provided by the footswitch and the headswitch.

3. 发明授权

US08223567B2 Memory read stability using selective precharge 有权
标题翻译：使用选择性预充电的存储器读稳定性
公开(公告)号：US08223567B2
公开(公告)日：2012-07-17
申请号：US12334817
申请日：2008-12-15
申请人： Mohamed H. Abu Rahma , Ritu Chaba , Nan Chen , Sei Seung Yoon
发明人： Mohamed H. Abu Rahma , Ritu Chaba , Nan Chen , Sei Seung Yoon
IPC分类号： G11C7/00
CPC分类号： G11C11/419 , G11C7/02 , G11C7/04 , G11C7/12 , G11C7/18 , G11C2207/002
摘要： A memory device utilizes selective precharge and charge sharing to reduce a bit line voltage before accessing a bit cell. A reduction in bit line voltage is achieved by precharging different sections of the bit line to different voltages (e.g., a supply voltage and ground) and using charge sharing between these sections. Read stability improves as a result of the reduction of bit line voltage. The relative capacitance difference between bit line sections determines the bit line voltage after charge sharing. Thus, the memory device is tolerant to process or temperature variations. The bit line voltage may be controlled in design by selecting the sections that are precharged to supply voltage or ground.
摘要翻译：存储器件利用选择性预充电和电荷共享以在访问位单元之前降低位线电压。通过将位线的不同部分预先充电到不同的电压（例如，电源电压和接地）并且使用这些部分之间的电荷共享来实现位线电压的降低。读取稳定性由于位线电压的降低而得到改善。位线部分之间的相对电容差确定电荷共享后的位线电压。因此，存储器件容忍处理或温度变化。可以通过选择预充电以供应电压或接地的部分来设计位线电压。

4. 发明申请

US20100103755A1 Read Assist for Memory Circuits 有权
标题翻译：读辅助内存电路
公开(公告)号：US20100103755A1
公开(公告)日：2010-04-29
申请号：US12256569
申请日：2008-10-23
申请人： Nan Chen , Ritu Chaba
发明人： Nan Chen , Ritu Chaba
IPC分类号： G11C7/00 , G11C5/14
CPC分类号： G11C11/419 , G11C7/12 , G11C11/417
摘要： A method increases stability of a memory circuit by pre-charging at least one bit line of the memory circuit to a first voltage, pre-charging at least one other bit line of the memory circuit to a second voltage, and equalizing charge across the bit lines so that the bit lines are pre-charged with a third voltage.
摘要翻译：一种方法通过将存储器电路的至少一个位线预充电到第一电压来增加存储器电路的稳定性，将存储器电路的至少一个其它位线预充电到第二电压，并且平衡位上的电荷使得位线被预充电第三电压。

5. 发明申请

US20100052763A1 CMOS Level Shifter Circuit Design 失效
标题翻译： CMOS电平变换器电路设计
公开(公告)号：US20100052763A1
公开(公告)日：2010-03-04
申请号：US12204147
申请日：2008-09-04
申请人： Ritu Chaba , Dongkyu Park , ChangHo Jung , Sei Seung Yoon
发明人： Ritu Chaba , Dongkyu Park , ChangHo Jung , Sei Seung Yoon
IPC分类号： H03L5/00
CPC分类号： H03K3/356113 , H03K3/012 , H03K3/356182
摘要： A level shifting circuit has a pair of assist circuits. The level shifting circuit includes an input point, an output point, a pair of cross-coupled PMOS transistors coupled to the output point, and a pair of NMOS transistors coupled between the input and output points. Each assist circuit includes a pair of PMOS transistors, one responsive to an input applied to the input point, the other responsive to the drain voltage of one of the NMOS transistors. The assist circuits temporarily weaken the cross-coupled PMOS transistors when an input changes from low to high, or from high to low. The assist circuits also transiently boost the output.
摘要翻译：电平移位电路具有一对辅助电路。电平移动电路包括耦合到输出点的输入点，输出点，一对交叉耦合PMOS晶体管和耦合在输入和输出点之间的一对NMOS晶体管。每个辅助电路包括一对PMOS晶体管，其一个响应于施加到输入点的输入，另一个响应于NMOS晶体管之一的漏极电压。当输入从低变化到高电平或从高变化到低电平时，辅助电路暂时弱化交叉耦合的PMOS晶体管。辅助电路也暂时提升输出。

6. 发明申请

US20110235449A1 Dual Sensing Current Latched Sense Amplifier 审中-公开
标题翻译：双感应电流锁定检测放大器
公开(公告)号：US20110235449A1
公开(公告)日：2011-09-29
申请号：US12731623
申请日：2010-03-25
申请人： Nan Chen , Ritu Chaba
发明人： Nan Chen , Ritu Chaba
IPC分类号： G11C7/06
CPC分类号： G11C7/00 , G11C7/065 , G11C7/08 , G11C7/12
摘要： A sense amplifier and method thereof are provided. The sense amplifier includes first and second transistors coupled to first and second bit lines, respectively. The first and second transistors are configured to connect the first and second bit lines to a differential amplifier during a first state (e.g., when a differential voltage is present on the first and second bit lines and prior to a sense signal transition) and to isolate the first and second bit lines from the differential amplifier during a second state (e.g., after the sense signal transition). The sense amplifier further includes a third transistor configured to deactivate the differential amplifier during the first state and configured to activate the differential amplifier during the second state.
摘要翻译：提供了一种读出放大器及其方法。读出放大器分别包括耦合到第一和第二位线的第一和第二晶体管。第一和第二晶体管被配置为在第一状态期间（例如，当差分电压存在于第一和第二位线上并且在感测信号转换之前）时将第一和第二位线连接到差分放大器并且隔离在第二状态（例如，在感测信号转换之后）来自差分放大器的第一和第二位线。读出放大器还包括第三晶体管，其被配置为在第一状态期间去激活差分放大器并且被配置为在第二状态期间激活差分放大器。

7. 发明授权

US07881137B2 Read assist for memory circuits with different precharge voltage levels for bit line pair 有权
标题翻译：对位线对具有不同预充电电压电平的存储电路的读辅助
公开(公告)号：US07881137B2
公开(公告)日：2011-02-01
申请号：US12256569
申请日：2008-10-23
申请人： Nan Chen , Ritu Chaba
发明人： Nan Chen , Ritu Chaba
IPC分类号： G11C7/00
CPC分类号： G11C11/419 , G11C7/12 , G11C11/417
摘要： A method increases stability of a memory circuit by pre-charging at least one bit line of the memory circuit to a first voltage, pre-charging at least one other bit line of the memory circuit to a second voltage, and equalizing charge across the bit lines so that the bit lines are pre-charged with a third voltage.
摘要翻译：一种方法通过将存储器电路的至少一个位线预充电到第一电压来增加存储器电路的稳定性，将存储器电路的至少一个其它位线预充电到第二电压，并且平衡位上的电荷使得位线被预充电第三电压。

8. 发明申请

US20100195366A1 Reducing Leakage Current in a Memory Device 有权
标题翻译：降低存储器件中的泄漏电流
公开(公告)号：US20100195366A1
公开(公告)日：2010-08-05
申请号：US12364105
申请日：2009-02-02
申请人： Nan Chen , Mehdi Hamidi Sani , Ritu Chaba
发明人： Nan Chen , Mehdi Hamidi Sani , Ritu Chaba
IPC分类号： G11C17/00 , G11C5/14 , G11C7/00
CPC分类号： G11C17/18 , G11C5/14 , G11C5/147 , G11C7/12
摘要： Memory devices and methods of reducing leakage current therein are disclosed. The memory device includes a memory core array including a plurality of bitlines, and peripheral logic configured to interface with the memory core array. The memory device further includes a footswitch configured to isolate the peripheral logic from a ground voltage, and a headswitch configured to isolate a precharge current path from the plurality of bit lines of the memory core array. Leakage current within the memory device may be reduced via the isolation provided by the footswitch and the headswitch.
摘要翻译：公开了减少漏电流的存储器件和方法。存储器件包括包括多个位线的存储器核心阵列和被配置为与存储器核心阵列接口的外围逻辑。存储器件还包括被配置为将外围逻辑与接地电压隔离的脚踏开关和被配置为将预充电电流路径与存储器核心阵列的多个位线隔离的头开关。通过脚踏开关和头开关提供的隔离可以减小存储器件内的泄漏电流。

9. 发明申请

US20100046276A1 Systems and Methods for Handling Negative Bias Temperature Instability Stress in Memory Bitcells 审中-公开
标题翻译：处理负偏压的系统和方法存储器位单元中的温度不稳定性应力
公开(公告)号：US20100046276A1
公开(公告)日：2010-02-25
申请号：US12194342
申请日：2008-08-19
申请人： Nan Chen , Cheng Zhong , Ritu Chaba
发明人： Nan Chen , Cheng Zhong , Ritu Chaba
IPC分类号： G11C11/00 , G11C5/14 , G11C7/00
CPC分类号： G11C7/1006 , G11C7/04 , G11C7/20 , G11C7/22 , G11C11/413
摘要： A system and method reduce stress caused by NBTI effects by determining if a trigger event has occurred and if so inverting all input data values to the memory and all output data values from the memory during a period of time defined by the determined trigger event. In one embodiment, the trigger event is an alternate memory power-up.
摘要翻译：系统和方法通过确定触发事件是否已经发生，并且如果在所确定的触发事件所定义的时间段期间将所有输入数据值反转到存储器和所有输出数据值，从而减少由NBTI效应引起的应力。在一个实施例中，触发事件是备用存储器加电。

10. 发明授权

US08760953B2 Sense amplifier with selectively powered inverter 有权
标题翻译：带有选择性供电的变频器的感应放大器
公开(公告)号：US08760953B2
公开(公告)日：2014-06-24
申请号：US12895896
申请日：2010-10-01
申请人： Nan Chen , Zhiqin Chen , Ritu Chaba
发明人： Nan Chen , Zhiqin Chen , Ritu Chaba
IPC分类号： G11C11/4091 , G11C16/28 , G11C11/412
CPC分类号： G11C7/065 , G11C7/08 , G11C7/1048 , G11C11/4091 , G11C11/4096
摘要： A sense amplifier includes a first inverter responsive to a first output of a latch. The first inverter is powered by a sense enable signal. The sense amplifier also includes a second inverter responsive to a second output of the latch. The second inverter is also powered by the sense enable signal.
摘要翻译：读出放大器包括响应于锁存器的第一输出的第一反相器。第一个逆变器由感测使能信号供电。读出放大器还包括响应于锁存器的第二输出的第二反相器。第二个反相器也由感应使能信号供电。

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