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    • 2. 发明授权
    • Process and apparatus for conversion of silicon tetrachloride to trichlorosilane
    • 用于将四氯化硅转化为三氯硅烷的方法和设备
    • US09480959B2
    • 2016-11-01
    • US13979268
    • 2012-01-16
    • Robert RingNoemi BanosUwe Paetzold
    • Robert RingNoemi BanosUwe Paetzold
    • C01B33/08B01J12/00C01B33/107C01B33/04
    • B01J12/00C01B33/04C01B33/1071Y02P20/129
    • A process for hydrogenating chlorosilanes in a reactor, wherein at least two reactant gas streams are introduced separately from one another into a reaction zone, wherein the first reactant gas stream comprising silicon tetrachloride is conducted via a first heat exchanger unit in which it is heated and is then conducted through a heating unit which heats it to a first temperature before the first reactant gas stream reaches the reaction zone, and wherein the second reactant gas stream comprising hydrogen is heated by a second heat exchanger unit to a second temperature, wherein the first temperature is greater than the second temperature, and then introduced into the reaction zone, such that the mixing temperature of the two reactant gas streams in the reaction zone is between 850° C. and 1300° C., and said reactant gas streams react to give product gases comprising trichlorosilane and hydrogen chloride, wherein the product gases obtained in the reaction are conducted through said at least two heat exchanger units and preheat the reactant gas streams of the reaction by the countercurrent principle, wherein the flow passes first through the first heat exchanger unit and then through the second heat exchanger unit. A reactor for hydrogenating chlorosilanes, comprising two gas inlet devices through which reactant gases can be introduced separately from one another into the reactor, and at least one gas outlet device through which a product gas stream can be conducted, at least two heat exchanger units which are connected to one another and which are suitable for heating reactant gases separately from one another by means of the product gases conducted through the heat exchanger units, and a heating zone which is arranged between a first heat exchanger unit and a reaction zone and in which there is at least one heating element.
    • 一种在反应器中氢化氯硅烷的方法,其中至少两个反应物气流彼此分开引入反应区,其中包含四氯化硅的第一反应气流通过其中被加热的第一热交换器单元进行, 然后通过加热单元进行加热,该加热单元在第一反应气流到达反应区之前将其加热到第一温度,并且其中包含氢的第二反应气体流由第二热交换器单元加热到第二温度,其中第一 温度大于第二温度,然后引入反应区,使得反应区中的两个反应气流的混合温度在850℃和1300℃之间,所述反应气流与 得到包含三氯硅烷和氯化氢的产物气体,其中在反应中获得的产物气体通过所述a进行 至少两个热交换器单元并且通过逆流原理预热反应物的反应气流,其中流动首先通过第一热交换器单元然后通过第二热交换器单元。 用于氢化氯硅烷的反应器,包括两个气体入口装置,反应物气体可以通过该反应气体彼此分开引入反应器,以及至少一个气体出口装置,通过该气体出口装置可以传导产物气流;至少两个热交换器单元, 彼此连接并且适于通过通过热交换器单元传导的产物气体彼此分开地加热反应气体;以及加热区,其布置在第一热交换器单元和反应区之间,其中 至少有一个加热元件。
    • 4. 发明申请
    • PROCESS AND APPARATUS FOR CONVERSION OF SILICON TETRACHLORIDE TO TRICHLOROSILANE
    • 三氯硅酸盐转化为三氯硅烷的方法和装置
    • US20130287668A1
    • 2013-10-31
    • US13979268
    • 2012-01-16
    • Robert RingNoemi BanosUwe Paetzold
    • Robert RingNoemi BanosUwe Paetzold
    • B01J12/00C01B33/04
    • B01J12/00C01B33/04C01B33/1071Y02P20/129
    • A process for hydrogenating chlorosilanes in a reactor, wherein at least two reactant gas streams are introduced separately from one another into a reaction zone, wherein the first reactant gas stream comprising silicon tetrachloride is conducted via a first heat exchanger unit in which it is heated and is then conducted through a heating unit which heats it to a first temperature before the first reactant gas stream reaches the reaction zone, and wherein the second reactant gas stream comprising hydrogen is heated by a second heat exchanger unit to a second temperature, wherein the first temperature is greater than the second temperature, and then introduced into the reaction zone, such that the mixing temperature of the two reactant gas streams in the reaction zone is between 850° C. and 1300° C., and said reactant gas streams react to give product gases comprising trichlorosilane and hydrogen chloride, wherein the product gases obtained in the reaction are conducted through said at least two heat exchanger units and preheat the reactant gas streams of the reaction by the countercurrent principle, wherein the flow passes first through the first heat exchanger unit and then through the second heat exchanger unit. A reactor for hydrogenating chlorosilanes, comprising two gas inlet devices through which reactant gases can be introduced separately from one another into the reactor, and at least one gas outlet device through which a product gas stream can be conducted, at least two heat exchanger units which are connected to one another and which are suitable for heating reactant gases separately from one another by means of the product gases conducted through the heat exchanger units, and a heating zone which is arranged between a first heat exchanger unit and a reaction zone and in which there is at least one heating element.
    • 一种在反应器中氢化氯硅烷的方法,其中至少两个反应物气流彼此分开引入反应区,其中包含四氯化硅的第一反应气流通过其中被加热的第一热交换器单元进行, 然后通过加热单元进行加热,该加热单元在第一反应气流到达反应区之前将其加热到第一温度,并且其中包含氢的第二反应气体流由第二热交换器单元加热到第二温度,其中第一 温度大于第二温度,然后引入反应区,使得反应区中的两个反应气流的混合温度在850℃和1300℃之间,所述反应气流与 得到包含三氯硅烷和氯化氢的产物气体,其中在反应中获得的产物气体通过所述a进行 至少两个热交换器单元并且通过逆流原理预热反应物的反应气流,其中流动首先通过第一热交换器单元然后通过第二热交换器单元。 用于氢化氯硅烷的反应器,包括两个气体入口装置,反应物气体可以通过该反应气体彼此分开引入反应器,以及至少一个气体出口装置,通过该气体出口装置可以传导产物气流;至少两个热交换器单元, 彼此连接并且适于通过通过热交换器单元传导的产物气体彼此分开地加热反应气体;以及加热区,其布置在第一热交换器单元和反应区之间,其中 至少有一个加热元件。
    • 8. 发明申请
    • PROCESS FOR PRODUCING POLYSILICON
    • 多晶硅生产工艺
    • US20130011558A1
    • 2013-01-10
    • US13533441
    • 2012-06-26
    • Walter HAECKLBarbara MUELLERRobert RING
    • Walter HAECKLBarbara MUELLERRobert RING
    • C23C16/24
    • C23C16/24C01B33/03C01B33/035C01B33/10778
    • A process for producing polysilicon, includes a) depositing polycrystalline silicon on filaments using reaction gas containing silicon-containing component (SCC) containing trichlorosilane, and hydrogen, wherein molar saturation of SCC based on hydrogen is at least 25%; b) feeding offgas from the deposition into a cooling apparatus, i) wherein condensed offgas components containing SiCl4 are conducted to an apparatus which enables distillative purification of the condensate, and ii) non-condensing components are conducted to an adsorption or desorption unit; c) obtaining a first stream of non-condensing components purified by adsorption and containing hydrogen; and d) obtaining, during adsorption unit regeneration, a second stream of non-condensing components, containing SiCl4 which is then preferably supplied to a converter for conversion of SiCl4 to trichlorosilane. A process for depositing polysilicon on filaments with a reaction gas includes a SCC and hydrogen, wherein molar saturation of SCC based on hydrogen is at least 25%.
    • 一种生产多晶硅的方法,包括:a)使用含有含三氯硅烷的含硅组分(SCC)和氢气的氢气沉积多晶硅,其中基于氢的SCC的摩尔饱和度至少为25%; b)将沉淀物中的废气进料到冷却装置中,i)其中含有SiCl 4的浓缩废气组分被导入能够对冷凝物进行蒸馏净化的装置,以及ii)将非冷凝组分导入吸附或解吸装置; c)获得通过吸附纯化并含有氢的第一个非冷凝组分物流; 和d)在吸附单元再生期间获得含有SiCl 4的第二非冷凝组分流,然后优选将其供应到用于将SiCl 4转化为三氯硅烷的转化器。 用反应气体在长丝上沉积多晶硅的方法包括SCC和氢,其中基于氢的SCC的摩尔饱和度为至少25%。