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1. 发明授权

US08741770B2 Semiconductor device and method for patterning vertical contacts and metal lines in a common etch process 有权
标题翻译：在普通蚀刻工艺中用于图案化垂直接触和金属线的半导体器件和方法
公开(公告)号：US08741770B2
公开(公告)日：2014-06-03
申请号：US13468083
申请日：2012-05-10
申请人： Ralf Richter , Robert Seidel , Juergen Boemmels , Thomas Foltyn
发明人： Ralf Richter , Robert Seidel , Juergen Boemmels , Thomas Foltyn
IPC分类号： H01L23/48 , H01L21/4763
CPC分类号： H01L21/7681 , H01L21/76811 , H01L21/76816
摘要： Interlayer connections, i.e., vertical connections, may be formed on the basis of a hard mask material, which may be positioned below, within or above an interlayer dielectric material, wherein one lateral dimension is defined by a trench mask, thereby obtaining a desired interlayer connection in a common patterning process. Furthermore, the thickness of at least certain portions of the metal lines may be adjusted with a high degree of flexibility, thereby providing the possibility of significantly reducing the overall resistivity of metal lines in metal levels, in which device performance may significantly depend on resistivity rather than parasitic capacitance.
摘要翻译：中间层连接（即垂直连接）可以基于硬掩模材料形成，硬掩模材料可以位于层间电介质材料的内部或之上，其中一个横向尺寸由沟槽掩模限定，从而获得所需的中间层连接在共同的图案化过程中。此外，金属线的至少某些部分的厚度可以以高度的柔性来调节，从而提供了显着降低金属线中金属线的整体电阻率的可能性，其中器件性能可能显着地取决于电阻率比寄生电容。

2. 发明授权

US08664657B2 Electrical circuit with a nanostructure and method for producing a contact connection of a nanostructure 失效
标题翻译：具有纳米结构的电路和用于产生纳米结构的接触连接的方法
公开(公告)号：US08664657B2
公开(公告)日：2014-03-04
申请号：US11577070
申请日：2005-10-11
申请人： Georg Duesberg , Franz Kreupl , Robert Seidel , Gernot Steinlesberger
发明人： Georg Duesberg , Franz Kreupl , Robert Seidel , Gernot Steinlesberger
IPC分类号： H01L29/00 , H01L29/04 , H01L29/10
CPC分类号： H01L51/0048 , B82Y10/00 , H01L51/0021
摘要： A circuit is disclosed. The circuit includes at least one nanostructure and a carbon interconnect formed by a substantially carbon layer, wherein the nanostructure and the carbon interconnect are directly coupled to one another.
摘要翻译：公开了一种电路。电路包括由基本上碳层形成的至少一个纳米结构和碳互连，其中纳米结构和碳互连彼此直接耦合。

3. 发明授权

US08338314B2 Technique for reducing topography-related irregularities during the patterning of a dielectric material in a contact level of closely spaced transistors 失效
标题翻译：在紧密间隔的晶体管的接触电平中的介电材料的图案化期间减小与形貌相关的不规则性的技术
公开(公告)号：US08338314B2
公开(公告)日：2012-12-25
申请号：US12372006
申请日：2009-02-17
申请人： Ralf Richter , Heike Salz , Robert Seidel
发明人： Ralf Richter , Heike Salz , Robert Seidel
IPC分类号： H01L21/31
CPC分类号： H01L21/02107 , H01L21/31116 , H01L21/823807 , H01L21/823814 , H01L29/51 , H01L29/7843 , H01L29/7848 , Y02P80/30
摘要： In a dual stress liner approach, the surface conditions after the patterning of a first stress-inducing layer may be enhanced by appropriately designing an etch sequence for substantially completely removing an etch stop material, which may be used for the patterning of the second stress-inducing dielectric material, while, in other cases, the etch stop material may be selectively formed after the patterning of the first stress-inducing dielectric material. Hence, the dual stress liner approach may be efficiently applied to semiconductor devices of the 45 nm technology and beyond.
摘要翻译：在双重应力衬垫方法中，可以通过适当地设计用于基本上完全去除蚀刻停止材料的蚀刻顺序来增强第一应力诱导层的图案化之后的表面状态，所述蚀刻顺序可用于图案化第二应力 - 诱导介电材料，而在其它情况下，可以在第一应力诱导电介质材料的图案化之后选择性地形成蚀刻停止材料。因此，双重应力衬垫方法可以有效地应用于45nm技术及其以外的半导体器件。

4. 发明授权

US08319259B2 Semiconductor power switch having nanowires 有权
标题翻译：具有纳米线的半导体功率开关
公开(公告)号：US08319259B2
公开(公告)日：2012-11-27
申请号：US10587062
申请日：2005-01-19
申请人： Franz Kreupl , Robert Seidel
发明人： Franz Kreupl , Robert Seidel
IPC分类号： H01L29/76
CPC分类号： H01L29/775 , B82Y10/00 , H01L29/0649 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L29/66439 , H01L51/0048 , H01L51/0541 , H01L51/0545
摘要： A semiconductor power switch and method is disclosed. In one Embodiment, the semiconductor power switch has a source contact, a drain contact, a semiconductor structure which is provided between the source contact and the drain contact, and a gate which can be used to control a current flow through the semiconductor structure between the source contact and the drain contact. The semiconductor structure has a plurality of nanowires which are connected in parallel and are arranged in such a manner that each nanowire forms an electrical connection between the source contact and the drain contact.
摘要翻译：公开了一种半导体功率开关和方法。在一个实施例中，半导体功率开关具有源极接触，漏极接触，设置在源极接触和漏极接触之间的半导体结构，以及可用于控制通过半导体结构的电流源极接触和漏极接触。半导体结构具有并联连接的多个纳米线，并且以使得每个纳米线在源极触点和漏极触点之间形成电连接的方式布置。

5. 发明申请

US20110117723A1 NANO IMPRINT TECHNIQUE WITH INCREASED FLEXIBILITY WITH RESPECT TO ALIGNMENT AND FEATURE SHAPING 有权
标题翻译： NANO印花技术与对准和特征形状相比具有更高的灵活性
公开(公告)号：US20110117723A1
公开(公告)日：2011-05-19
申请号：US13014771
申请日：2011-01-27
申请人： Robert Seidel , Carsten Peters , Frank Feustel
发明人： Robert Seidel , Carsten Peters , Frank Feustel
IPC分类号： H01L21/768 , H01L21/762 , H01L21/28
CPC分类号： B81B7/0006 , B81C2201/0153 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/28114 , H01L21/76224 , H01L21/76229 , H01L21/76804 , H01L21/76807 , H01L21/76817 , H01L21/76838 , H01L21/76852 , H01L21/76885 , H01L2221/1021
摘要： By forming metallization structures on the basis of an imprint technique, in which via openings and trenches may be commonly formed, a significant reduction of process complexity may be achieved due to the omission of at least one further alignment process as required in conventional process techniques. Furthermore, the flexibility and efficiency of imprint lithography may be increased by providing appropriately designed imprint molds in order to provide via openings and trenches exhibiting an increased fill capability, thereby also improving the performance of the finally obtained metallization structures with respect to reliability, resistance against electromigration and the like.
摘要翻译：通过基于压印技术形成金属化结构，其中可以通常形成通孔和沟槽，由于根据常规工艺技术所要求的至少一个进一步对准过程，可以实现工艺复杂性的显着降低。此外，可以通过提供适当设计的压印模具来提高压印光刻的灵活性和效率，以便提供表现出增加的填充能力的通孔开口和沟槽，从而也提高了最终获得的金属化结构在可靠性，抗性电迁移等。

6. 发明授权

US07785956B2 Technique for compensating for a difference in deposition behavior in an interlayer dielectric material 有权
标题翻译：补偿层间电介质材料沉积行为差异的技术
公开(公告)号：US07785956B2
公开(公告)日：2010-08-31
申请号：US12168443
申请日：2008-07-07
申请人： Ralf Richter , Robert Seidel , Carsten Peters
发明人： Ralf Richter , Robert Seidel , Carsten Peters
IPC分类号： H01L21/8238
CPC分类号： H01L21/823807 , H01L21/76816 , H01L21/76819 , H01L21/76829 , H01L21/76832 , H01L29/7843
摘要： By selectively providing a buffer layer having an appropriate thickness, height differences occurring during the deposition of an SACVD silicon dioxide may be reduced during the formation of an interlayer dielectric stack of advanced semiconductor devices. The buffer material may be selectively provided after the deposition of contact etch stop layers of both types of internal stress or may be provided after the deposition of one type of dielectric material and may be used during the subsequent patterning of the other type of dielectric stop material as an efficient etch stop layer.
摘要翻译：通过选择性地提供具有适当厚度的缓冲层，在形成先进的半导体器件的层间电介质叠层的过程中，可以减少沉积SACVD二氧化硅期间出现的高度差异。可以在沉积两种类型的内部应力的接触蚀刻停止层之后选择性地提供缓冲材料，或者可以在沉积一种类型的电介质材料之后提供缓冲材料，并且可以在随后的其它类型的电介质停止材料的图案化期间使用缓冲材料作为有效的蚀刻停止层。

7. 发明授权

US07646045B2 Method for fabricating a nanoelement field effect transistor with surrounded gate structure 失效
标题翻译：制造具有包围栅极结构的纳米元素场效应晶体管的方法
公开(公告)号：US07646045B2
公开(公告)日：2010-01-12
申请号：US12190379
申请日：2008-08-12
申请人： Franz Kreupl , Robert Seidel
发明人： Franz Kreupl , Robert Seidel
IPC分类号： H01L31/112
CPC分类号： H01L51/0048 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L51/0545 , Y10S977/72 , Y10S977/742 , Y10S977/762 , Y10S977/813
摘要： A nanoelement field effect transistor includes a nanotube disposed on the substrate. A first source/drain region is coupled to a first end portion of the nanoelement and a second source/drain region is coupled to a second end portion of the nanoelement. A recess in a surface region of the substrate is arranged in such a manner that a region of the nanoelement arranged between the first and second end portions is taken out over the entire periphery of the nanoelement. A gate-insulating structure covers the periphery of the nanoelement and a gate structure covers the periphery of the gate-insulating structure.
摘要翻译：纳米元素场效应晶体管包括设置在基板上的纳米管。第一源极/漏极区域耦合到纳米元件的第一端部分，并且第二源极/漏极区域耦合到纳米元件的第二端部。衬底的表面区域中的凹部被布置成使得布置在第一和第二端部之间的纳米元件的区域在纳米元件的整个外围被取出。栅极绝缘结构覆盖纳米元件的周边，并且栅极结构覆盖栅极绝缘结构的周边。

8. 发明申请

US20090243109A1 METAL CAP LAYER OF INCREASED ELECTRODE POTENTIAL FOR COPPER-BASED METAL REGIONS IN SEMICONDUCTOR DEVICES 有权
标题翻译：在半导体器件中用于铜基金属区域的电极潜在金属层的金属层
公开(公告)号：US20090243109A1
公开(公告)日：2009-10-01
申请号：US12355840
申请日：2009-01-19
申请人： Markus Nopper , Axel Preusse , Robert Seidel
发明人： Markus Nopper , Axel Preusse , Robert Seidel
IPC分类号： H01L23/522 , H01L21/768
CPC分类号： H01L23/53238 , H01L21/76814 , H01L21/76849 , H01L21/76861 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A conductive cap material for a copper region may be provided with enhanced etch resistivity by taking into consideration the standard electrode potential of one or more of the species contained therein. For example, instead of a conventionally used CoWP alloy, a modified alloy may be used, by substituting the cobalt species by a metallic species having a less negative standard electrode potential, such as nickel. Consequently, device performance may be enhanced, while at the same time the overall process complexity may be reduced.
摘要翻译：考虑到其中包含的一种或多种物质的标准电极电位，可以提供用于铜区域的导电盖材料，其具有增强的蚀刻电阻率。例如，代替常规使用的CoWP合金，可以通过用具有较小负极标准电极电位的金属物质例如镍代替钴物质来代替改进的合金。因此，可以增强设备性能，同时可以减少整体过程的复杂性。

9. 发明授权

US09023293B2 Device for separation of essential oils and method of use 有权
标题翻译：精油分离装置及使用方法
公开(公告)号：US09023293B2
公开(公告)日：2015-05-05
申请号：US13972720
申请日：2013-08-21
申请人： Robert Seidel
发明人： Robert Seidel
IPC分类号： B01L3/08 , C11B9/02
CPC分类号： C11B9/027 , B01L3/08
摘要： A light-oil separator device includes a collector funnel having a downwardly directed stem portion having an outside diameter. The stem portion adapts to insert in an upward extending neck portion of a collection vessel. The neck portion includes an inner diameter that is greater than the outer diameter of the funnel stem. The neck also includes an oil port at a first height. The vessel includes a body having a hydrosol port at a lower portion of a body sidewall. This port connects to an evacuation tube having a proximal end and an S-shape. This conduit includes an air vent at a top portion at a second height lower than the first height, the air vent extends upward to a height higher than the first height. The S-shape conduit terminates with a downward facing end portion at its distal end.
摘要翻译：轻油分离器装置包括具有向外指向的具有外径的杆部的收集器漏斗。杆部分适于插入收集容器的向上延伸的颈部中。颈部包括大于漏斗杆的外径的内径。颈部还包括在第一高度的油口。容器包括在身体侧壁的下部具有水溶胶端口的主体。该端口连接到具有近端和S形的抽空管。该导管包括位于比第一高度低的第二高度处的顶部的通风口，空气通道向上延伸到高于第一高度的高度。 S形导管在其远端处以向下的端部终止。

10. 发明申请

US20140058121A1 DEVICE FOR SEPARATION OF ESSENTIAL OILS AND METHOD OF USE 审中-公开
标题翻译：用于分离基本油的装置及其使用方法
公开(公告)号：US20140058121A1
公开(公告)日：2014-02-27
申请号：US13972720
申请日：2013-08-21
申请人： Robert Seidel
发明人： Robert Seidel
IPC分类号： C11B9/02
CPC分类号： C11B9/027 , B01L3/08
摘要： A light-oil separator device includes a collector funnel having a downwardly directed stem portion having an outside diameter. The stem portion adapts to insert in an upward extending neck portion of a collection vessel. The neck portion includes an inner diameter that is greater than the outer diameter of the funnel stem. The neck also includes an oil port at a first height. The vessel includes a body having a hydrosol port at a lower portion of a body sidewall. This port connects to an evacuation tube having a proximal end and an S-shape. This conduit includes an air vent at a top portion at a second height lower than the first height, the air vent extends upward to a height higher than the first height. The S-shape conduit terminates with a downward facing end portion at its distal end.
摘要翻译：轻油分离器装置包括具有向外指向的具有外径的杆部的收集器漏斗。杆部分适于插入收集容器的向上延伸的颈部中。颈部包括大于漏斗杆的外径的内径。颈部还包括在第一高度的油口。容器包括在身体侧壁的下部具有水溶胶端口的主体。该端口连接到具有近端和S形的抽空管。该导管包括位于比第一高度低的第二高度处的顶部的通风口，空气通道向上延伸到高于第一高度的高度。 S形导管在其远端处以向下的端部终止。

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