会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明申请
    • Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece
    • 用于电化学处理微电子工件的反应器中的调谐电极
    • US20070089991A1
    • 2007-04-26
    • US11639733
    • 2006-12-14
    • Gregory WilsonPaul McHughRobert WeaverThomas Ritzdorf
    • Gregory WilsonPaul McHughRobert WeaverThomas Ritzdorf
    • C25D21/12
    • C25D21/12C25D17/001C25F3/30
    • A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters. In some embodiments, the facility analyzes a profile of the seed layer applied to a workpiece, and determines and communicates to a material deposition tool a set of control parameters designed to deposit material on the workpiece in a manner that compensates for deficiencies in the seed layer.
    • 描述了一种用于选择和精炼用于在处理室中处理微电子工件的电参数的设备。 该设备最初根据处理室的数学模型或从操作实际处理室得到的实验数据来初始配置电参数。 在用初始参数配置处理工件之后,测量结果,并且使用基于处理室的数学模型的灵敏度矩阵来选择校正在第一工件的处理中测量的任何缺陷的新参数。 然后将这些参数用于处理可以类似地测量的第二工件,并且用于进一步改进参数的结果。 在一些实施例中,设备分析施加到工件的种子层的轮廓,并且确定并传送材料沉积工具一组控制参数,这些控制参数被设计成以补偿种子层中的缺陷的方式在工件上沉积材料 。
    • 10. 发明申请
    • Tuning electrodes used in a reactor for electrochemically processing a microelectric workpiece
    • 用于电化学处理微电子工件的反应器中的调谐电极
    • US20050183959A1
    • 2005-08-25
    • US11097508
    • 2005-03-31
    • Gregory WilsonPaul McHughRobert WeaverThomas Ritzdorf
    • Gregory WilsonPaul McHughRobert WeaverThomas Ritzdorf
    • C23C14/54C23C16/52C25D7/12C25D21/12C25D5/02
    • C23C16/52C23C14/545C25D7/123C25D21/12
    • A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters. In some embodiments, the facility analyzes a profile of the seed layer applied to a workpiece, and determines and communicates to a material deposition tool a set of control parameters designed to deposit material on the workpiece in a manner that compensates for deficiencies in the seed layer.
    • 描述了一种用于选择和精炼用于在处理室中处理微电子工件的电参数的设备。 该设备最初根据处理室的数学模型或从操作实际处理室得到的实验数据来初始配置电参数。 在用初始参数配置处理工件之后,测量结果,并且使用基于处理室的数学模型的灵敏度矩阵来选择校正在第一工件的处理中测量的任何缺陷的新参数。 然后将这些参数用于处理可以类似地测量的第二工件,并且用于进一步改进参数的结果。 在一些实施例中,设备分析施加到工件的种子层的轮廓,并且确定并传送材料沉积工具一组控制参数,这些控制参数被设计成以补偿种子层中的缺陷的方式在工件上沉积材料 。