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    • 1. 发明授权
    • InP single crystal wafer and method for producing InP single crystal
    • InP单晶晶片及其制造方法
    • US08815010B2
    • 2014-08-26
    • US11587698
    • 2005-02-15
    • Akira NodaRyuichi Hirano
    • Akira NodaRyuichi Hirano
    • C01B25/08C30B15/10C30B27/02C01B25/00C30B15/00
    • C30B27/02C30B15/00C30B15/22C30B29/40
    • A method for producing a low-dislocation InP single crystal suitably used for an optical device such as a semiconductor laser, and the low-dislocation InP single crystal wafer are provided. In a liquid-encapsulated Czochralski method in which a semiconductor raw material and an encapsulant are contained in a raw material melt containing part comprising a cylindrical crucible having a bottom, the raw material containing part is heated to melt the raw material, and a seed crystal is brought into contact with a surface of a melt of the raw material in a state of being covered with the encapsulant to grow a crystal while the seed crystal is raised; a crystal shoulder part is grown from the seed crystal by setting a temperature gradient in a crystal growth direction to 25° C./cm or less and setting a temperature-fall amount to 0.25° C./hr or more. Thus, an iron-doped or undoped InP single crystal wafer in which an area having a dislocation density of 500/cm2 or less occupies 70% or more is realized.
    • 提供适合用于半导体激光器等光学元件的低位错InP单晶的制造方法和低位错InP单晶晶片。 在包含具有底部的圆柱形坩埚的原料熔融物的部件中含有半导体原料和密封剂的液体封装的切克劳斯法中,加热含有原料的部分,使原料熔融, 在被密封剂覆盖的状态下与原料的熔体的表面接触以在晶种升高的同时生长晶体; 通过将晶体生长方向的温度梯度设定为25℃/ cm以下,将温度下降量设定为0.25℃/小时以上,从晶种生长晶面部。 因此,实现了具有500 / cm 2以下的位错密度的面积占70%以上的铁掺杂或未掺杂的InP单晶晶片。
    • 5. 发明授权
    • CdTe crystal or CdZnTe crystal and method for preparing the same
    • CdTe晶体或CdZnTe晶体及其制备方法
    • US06299680B1
    • 2001-10-09
    • US09462268
    • 2000-01-06
    • Akio KoyamaRyuichi Hirano
    • Akio KoyamaRyuichi Hirano
    • C30B2948
    • C30B11/00C30B29/48
    • An object of the present invention is to reduce the etch pit density (EPD) and the full-width-half-maximum (FWHM) value of the double crystal X-ray rocking curve, and to provide a CdTe crystal or a CdZnTe crystal which does not include deposits having Cd or Te and the process for producing the same. After a CdTe crystal or a CdZnTe crystal was grown, while the temperature of the crystal is from 700 to 1050° C., the Cd pressure is adjusted so as to keep the stoichiometry of the crystal at the above temperature. The crystal is left for time t which is determined so that each of a diameter L(r) of the crystal and a length L(z) thereof satisfies the following equation 1: {L(r),(L(z))}/2
    • 本发明的目的是减少双晶X射线摇摆曲线的蚀刻坑密度(EPD)和全宽半最大值(FWHM)值,并提供CdTe晶体或CdZnTe晶体,其中 不包括具有Cd或Te的沉积物及其制备方法。 在CdTe晶体或CdZnTe晶体生长之后,当晶体的温度为700至1050℃时,调节Cd压力以将晶体的化学计量保持在上述温度。 对于晶体留下的晶体,其被确定为使得晶体的直径L(r)和长度L(z)分别满足以下等式1:然后,当晶体冷却时,晶体的温度 在晶体的温度和Cd储层的温度满足以下等式2的范围内降低:
    • 7. 发明授权
    • Integration of secondary content into a catalog system
    • 将次要内容集成到目录系统中
    • US08856039B1
    • 2014-10-07
    • US13012597
    • 2011-01-24
    • Kamlesh T. TalrejaMark ChienRyuichi HiranoSean M. ScottQiang Zhao
    • Kamlesh T. TalrejaMark ChienRyuichi HiranoSean M. ScottQiang Zhao
    • G06F17/30
    • G06F17/30893
    • A system is disclosed that integrates secondary content, such as articles retrieved from a collaborative encyclopedia or other content site, into an electronic catalog system or site that hosts an interactive electronic catalog. In some embodiments, the system operates by retrieving secondary content articles from an external system or site, and by supplementing these articles with interactive display elements for accessing related catalog content and/or functions. For example, if an article mentions a particular catalog item or group of catalog items, it may be supplemented with a selectable display element for viewing catalog content associated with the referenced item or item group. The supplemented articles are made available to users via pages of the electronic catalog system or site.
    • 公开了将辅助内容(例如从协作百科全书或其他内容站点检索的文章)集成到承载交互式电子目录的电子目录系统或站点的系统。 在一些实施例中,系统通过从外部系统或站点检索次要内容文章并且通过用用于访问相关目录内容和/或功能的交互式显示元素补充这些文章来进行操作。 例如,如果文章提到特定目录项目或目录项目组,则可以用可选择的显示元素补充以查看与所引用的项目或项目组相关联的目录内容。 补充的文章通过电子目录系统或站点的页面提供给用户。
    • 9. 发明申请
    • Substrate for Growing Compound Semiconductor and Epitaxial Growth Method
    • 用于生长化合物半导体和外延生长法的基板
    • US20090025629A1
    • 2009-01-29
    • US12223453
    • 2007-02-02
    • Hideki KuritaRyuichi Hirano
    • Hideki KuritaRyuichi Hirano
    • C30B25/18B32B3/00
    • C30B25/18C30B29/40Y10T428/24479
    • It is to provide a substrate for growing a semiconductor, which is effective for suppressing an occurrence of surface defects different in type from hillock defects in case of epitaxially growing a compound semiconductor layer, particularly an Al-based compound semiconductor layer.In a substrate for growing a compound semiconductor, in which a crystal surface inclined at a predetermined off angle with respect to a (100) plane is a principal plane, an angle made by a direction of a vector obtained by projecting a normal vector of the principal plane on the (100) plane and one direction of a [0-11] direction, a [01-1] direction, a [011] direction and a [0-1-1] direction is set to be less than 35°, and the compound semiconductor layer is epitaxially grown on the substrate.
    • 提供一种用于生长半导体的衬底,其在外延生长化合物半导体层,特别是Al基化合物半导体层的情况下,有效抑制类型与山丘缺陷不同的表面缺陷的发生。 在用于生长化合物半导体的衬底中,其中以相对于(100)面倾斜预定偏离角的晶体表面是主平面,由通过将(100)面的法向量投影获得的矢量的方向 (100)面上的主平面和[0-11]方向的一个方向,[01-1]方向,[011]方向和[0-1-1]方向设定为小于35 °,并且在衬底上外延生长化合物半导体层。