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1. 发明授权

US08821637B2 Temperature controlled lid assembly for tungsten nitride deposition 有权
标题翻译：用于氮化钨沉积的温度控制盖组件
公开(公告)号：US08821637B2
公开(公告)日：2014-09-02
申请号：US12021825
申请日：2008-01-29
申请人： Avgerinos V. Gelatos , Sang-Hyeob Lee , Xiaoxiong Yuan , Salvador P. Umotoy , Yu Chang , Gwo-Chuan Tzu , Emily Renuart , Jing Lin , Wing-Cheong Lai , Sang Q. Le
发明人： Avgerinos V. Gelatos , Sang-Hyeob Lee , Xiaoxiong Yuan , Salvador P. Umotoy , Yu Chang , Gwo-Chuan Tzu , Emily Renuart , Jing Lin , Wing-Cheong Lai , Sang Q. Le
IPC分类号： C23C16/455 , C23C16/00
CPC分类号： C23C16/14 , C23C16/34 , C23C16/4401 , C23C16/4411 , C23C16/45512 , C23C16/45523
摘要： Embodiments of the invention provide apparatuses for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a processing chamber is provided which includes a lid assembly containing a lid plate, a showerhead, a mixing cavity, a distribution cavity, and a resistive heating element contained within the lid plate. In one example, the resistive heating element is configured to provide the lid plate at a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 160° C., more preferably, from about 145° C. to about 155° C. The mixing cavity may be in fluid communication with a tungsten precursor source containing tungsten hexafluoride and a nitrogen precursor source containing ammonia. In some embodiments, a single processing chamber may be used to deposit metallic tungsten and tungsten nitride materials by CVD processes.
摘要翻译：本发明的实施例提供了用于气相沉积含钨材料如金属钨和氮化钨的装置。在一个实施例中，提供了一种处理室，其包括盖子组件，该盖子组件包含盖板，喷头，混合腔，分配腔和容纳在盖板内的电阻加热元件。在一个示例中，电阻加热元件被配置成将盖板设置在约120℃至约180℃，优选约140℃至约160℃的温度范围内，更多优选约145℃至约155℃。混合腔可与含有六氟化钨的钨前体源和含氨的氮前体源流体连通。在一些实施例中，单个处理室可用于通过CVD工艺沉积金属钨和氮化钨材料。

2. 发明授权

US08747556B2 Apparatuses and methods for atomic layer deposition 有权
标题翻译：用于原子层沉积的装置和方法
公开(公告)号：US08747556B2
公开(公告)日：2014-06-10
申请号：US13618741
申请日：2012-09-14
申请人： Hyman W. H. Lam , Bo Zheng , Hua Ai , Michael Jackson , Xiaoxiong Yuan , Hougong Wang , Salvador P. Umotoy , Sang Ho Yu
发明人： Hyman W. H. Lam , Bo Zheng , Hua Ai , Michael Jackson , Xiaoxiong Yuan , Hougong Wang , Salvador P. Umotoy , Sang Ho Yu
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/45536 , C23C16/45544 , C23C16/4558 , H01J37/32449 , Y10T137/87265
摘要： Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.
摘要翻译：本发明的实施例提供了诸如等离子体增强型ALD（PE-ALD）的原子层沉积（ALD）的装置和方法。在一些实施例中，提供了一种PE-ALD室，其包括与其中具有基板支撑件的室主体耦合的室盖组件。在一个实施例中，室盖组件具有入口歧管组件，其包含围绕集中通道的环形通道，其中集中通道延伸穿过入口歧管组件，并且入口歧管组件还包含从环形通道延伸的注入孔，集中通道侧壁，集中通道。腔室盖组件还包括设置在入口歧管组件下方的喷头组件，设置在入口歧管组件和喷头组件之间的水箱，以及设置在入口歧管组件上方并与入口歧管组件耦合的远程等离子体系统（RPS）与集中通道的流体通信。

3. 发明申请

US20130008984A1 APPARATUSES AND METHODS FOR ATOMIC LAYER DEPOSITION 有权
标题翻译：用于原子层沉积的装置和方法
公开(公告)号：US20130008984A1
公开(公告)日：2013-01-10
申请号：US13618741
申请日：2012-09-14
申请人： Hyman Lam , Bo Zheng , Hua Ai , Michael Jackson , Xiaoxiong (John) Yuan , Hou Gong Wang , Salvador P. Umotoy , Sang Ho Yu
发明人： Hyman Lam , Bo Zheng , Hua Ai , Michael Jackson , Xiaoxiong (John) Yuan , Hou Gong Wang , Salvador P. Umotoy , Sang Ho Yu
IPC分类号： C23C16/455
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/45536 , C23C16/45544 , C23C16/4558 , H01J37/32449 , Y10T137/87265
摘要： Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.
摘要翻译：本发明的实施例提供了诸如等离子体增强型ALD（PE-ALD）的原子层沉积（ALD）的装置和方法。在一些实施例中，提供了一种PE-ALD室，其包括与其中具有基板支撑件的室主体耦合的室盖组件。在一个实施例中，室盖组件具有入口歧管组件，其包含围绕集中通道的环形通道，其中集中通道延伸穿过入口歧管组件，并且入口歧管组件还包含从环形通道延伸的注入孔，集中通道侧壁，集中通道。室盖组件还包括布置在入口歧管组件下方的喷头组件，设置在入口歧管组件和喷头组件之间的水箱，以及设置在入口歧管组件上方并与入口歧管组件耦合的远程等离子体系统（RPS）与集中通道的流体通信。

4. 发明授权

US08293015B2 Apparatuses and methods for atomic layer deposition 有权
公开(公告)号：US08293015B2
公开(公告)日：2012-10-23
申请号：US13232317
申请日：2011-09-14
申请人： Hyman W. H. Lam , Bo Zheng , Hua Ai , Michael Jackson , Xiaoxiong Yuan , Hougong Wang , Salvador P. Umotoy , Sang Ho Yu
发明人： Hyman W. H. Lam , Bo Zheng , Hua Ai , Michael Jackson , Xiaoxiong Yuan , Hougong Wang , Salvador P. Umotoy , Sang Ho Yu
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/45536 , C23C16/45544 , C23C16/4558 , H01J37/32449 , Y10T137/87265
摘要： Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.

5. 发明授权

US5766365A Removable ring for controlling edge deposition in substrate processing apparatus 失效
标题翻译：用于控制基板处理装置中的边缘沉积的可拆卸环
公开(公告)号：US5766365A
公开(公告)日：1998-06-16
申请号：US472220
申请日：1995-06-07
申请人： Salvador P. Umotoy , Alan F. Morrison , Karl A. Littau , Richard A. Marsh , Lawrence Chung-Lai Lei
发明人： Salvador P. Umotoy , Alan F. Morrison , Karl A. Littau , Richard A. Marsh , Lawrence Chung-Lai Lei
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/205 , H01L21/28 , H01L21/285 , H01L21/68 , H01L21/683 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/458 , C23C16/4583 , C23C16/4585 , C23C16/46 , H01L21/67103 , H01L21/68 , H01L21/6833 , H01L21/68735 , H01L21/68792
摘要： A substrate processing apparatus comprising a processing chamber in which a substrate support is located. The substrate support, which is in the form of a heater pedestal, has a surface dimensioned to receive the substrate, and is circumscribed by a removable purge ring which defines an annulus between itself and the pedestal. At the outer edge of the pedestal is a purge gas manifold, in the form of a cavity between the purge ring and the pedestal. The lower end of the manifold is sealed by means of a mechanical seal that is formed at process temperature as the pedestal expands from heating and comes into contact with the purge ring's lower edge. The upper end of the manifold opens into the annulus defined by the purge ring and the pedestal. The manifold is arranged so that during processing, purge gas is injected into the manifold and projected toward the edge of a substrate received on the surface of the pedestal. This gas moves upwards through the annulus defined between the purge ring and the substrate support. Consequently, processing gas is prevented from contacting the extreme edge portion of the substrate. This reduces unwanted deposition on the peripheral edge and lower surface of the substrate.
摘要翻译：一种基板处理装置，包括其中位于基板支撑件的处理室。处于加热器基座形式的衬底支撑件具有尺寸适于接收衬底的表面，并且由可拆卸的清除环限定，该清除环在其与底座之间限定环形空间。在基座的外边缘处是净化气体歧管，其形式为清洗环和基座之间的空腔。歧管的下端通过机械密封进行密封，机械密封在工艺温度下形成，因为基座从加热膨胀并与清洗环的下边缘接触。歧管的上端开口进入由清洗环和基座限定的环形空间。歧管被布置成使得在处理期间，吹扫气体被注入到歧管中并且朝着接收在基座的表面上的基板的边缘突出。该气体向上移动通过清洗环和衬底支撑件之间限定的环形空间。因此，防止处理气体与基板的最外缘部分接触。这减少了衬底的外围边缘和下表面上的不希望的沉积。

6. 发明授权

US08291857B2 Apparatuses and methods for atomic layer deposition 有权
标题翻译：用于原子层沉积的装置和方法
公开(公告)号：US08291857B2
公开(公告)日：2012-10-23
申请号：US12494901
申请日：2009-06-30
申请人： Hyman Lam , Bo Zheng , Hua Ai , Michael Jackson , Xiaoxiong (John) Yuan , Hou Gong Wang , Salvador P. Umotoy , Sang Ho Yu
发明人： Hyman Lam , Bo Zheng , Hua Ai , Michael Jackson , Xiaoxiong (John) Yuan , Hou Gong Wang , Salvador P. Umotoy , Sang Ho Yu
IPC分类号： C23C16/452 , C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/45536 , C23C16/45544 , C23C16/4558 , H01J37/32449 , Y10T137/87265
摘要： Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.
摘要翻译：本发明的实施例提供了诸如等离子体增强型ALD（PE-ALD）的原子层沉积（ALD）的装置和方法。在一些实施例中，提供了一种PE-ALD室，其包括与其中具有基板支撑件的室主体耦合的室盖组件。在一个实施例中，室盖组件具有入口歧管组件，其包含围绕集中通道的环形通道，其中集中通道延伸穿过入口歧管组件，并且入口歧管组件还包含从环形通道延伸的注入孔，集中通道侧壁，集中通道。腔室盖组件还包括设置在入口歧管组件下方的喷头组件，设置在入口歧管组件和喷头组件之间的水箱，以及设置在入口歧管组件上方并与入口歧管组件耦合的远程等离子体系统（RPS）与集中通道的流体通信。

7. 发明授权

US06461435B1 Showerhead with reduced contact area 有权
标题翻译：淋浴头接触面积减小
公开(公告)号：US06461435B1
公开(公告)日：2002-10-08
申请号：US09603117
申请日：2000-06-22
申请人： Karl A. Littau , Bevan Vo , Salvador P. Umotoy , Son N. Trinh , Chien-Teh Kao , Ken Kaung Lai , Bo Zheng , Ping Jian , Siqing Lu , Anzhong Chang
发明人： Karl A. Littau , Bevan Vo , Salvador P. Umotoy , Son N. Trinh , Chien-Teh Kao , Ken Kaung Lai , Bo Zheng , Ping Jian , Siqing Lu , Anzhong Chang
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/455 , H01J37/3244
摘要： A showerhead for distributing gases in a semiconductor process chamber. In one embodiment, a showerhead comprising a perforated center portion, a mounting portion circumscribing the perforated center portion and a plurality of bosses extending from the mounting portion each having a hole disposed therethrough is provided. Another embodiment of the invention provides a showerhead that includes a mounting portion having a first side circumscribing a perforated center portion. A ring extends from the first side of the mounting portion. A plurality of mounting holes are disposed in the mounting portion radially to either side of the ring. The showerhead provides controlled thermal transfer between the showerhead and chamber lid resulting in less deposition on the showerhead.
摘要翻译：用于在半导体处理室中分配气体的喷头。在一个实施例中，提供了一种喷头，包括穿孔中心部分，围绕穿孔中心部分的安装部分和从安装部分延伸的多个凸起，每个凸起具有穿过其中设置的孔。本发明的另一个实施例提供了一种喷头，其包括具有围绕穿孔中心部分的第一侧面的安装部分。环从安装部分的第一侧延伸。多个安装孔径向地设置在安装部分的环的任一侧。淋浴头在喷头和室盖之间提供受控的热转印，从而在喷头上沉积较少。

8. 发明授权

US5888304A Heater with shadow ring and purge above wafer surface 失效
标题翻译：加热器带有阴影环并在晶片表面上方吹扫
公开(公告)号：US5888304A
公开(公告)日：1999-03-30
申请号：US626789
申请日：1996-04-02
申请人： Salvador P. Umotoy , Alan F. Morrison , Karl A. Littau , Richard A. Marsh , Lawrence Chung-Lai Lei , Dale DuBois
发明人： Salvador P. Umotoy , Alan F. Morrison , Karl A. Littau , Richard A. Marsh , Lawrence Chung-Lai Lei , Dale DuBois
IPC分类号： C23C16/02 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/205 , H01L21/285 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/4585 , C23C16/46
摘要： This invention provides a method and apparatus for supporting a wafer in a processing chamber, where the wafer is supported and heated from below via a heater pedestal having a diameter larger than that of the wafer. A process fluid flowing downward toward the top of the wafer is inhibited from depositing near the wafer edge by a shadow ring. The shadow ring, which is placed over but does not contact the wafer, physically masks an annular strip of the wafer near its edge. The shadow ring inhibits deposition of process fluides on the wafer in two distinct ways. First, the shadow ring physically obstructs process gas, flowing downward from above the wafer, from depositing on the masked portion of the wafer. Second, the shadow ring is used to direct a flow of a purge gas to inhibit process gas from seeping under the shadow ring and depositing near the wafer edge. A purge gas manifold is defined by a cylindrical annulus located concentrically below the shadow ring and circumscribing the heater pedestal. A purge gap between the wafer and the shadow ring forms the outlet of the purge gas manifold. The purge gas flows out of the purge gap, inhibiting the process gas from entering the purge gap, and thus further inhibiting deposition on the masked portion of the wafer.
摘要翻译：本发明提供了一种用于在处理室中支撑晶片的方法和装置，其中通过直径大于晶片直径的加热器基座从下方支撑晶片并从其下被加热。向晶片顶部向下流动的工艺流体被阴影环抑制在晶片边缘附近沉积。放置在但不接触晶片的阴影环在其边缘附近物理屏蔽晶片的环形条。阴影环以两种截然不同的方式阻止了工艺流程在晶片上沉积。首先，阴影环物理地阻挡从晶片上方向下流动的工艺气体沉积在晶片的掩蔽部分上。第二，阴影环用于引导吹扫气体的流动，以阻止处理气体在阴影环下渗出并沉积在晶片边缘附近。吹扫气体歧管由同心地位于阴影环下方并围绕加热器基座的圆柱形环限定。晶片和阴影环之间的吹扫间隙形成吹扫气体歧管的出口。净化气体流出吹扫间隙，阻止处理气体进入吹扫间隙，从而进一步抑制沉积在晶片的掩蔽部分上。

9. 发明授权

US5871811A Method for protecting against deposition on a selected region of a substrate 失效
标题翻译：防止沉积在基底的选定区域上的方法
公开(公告)号：US5871811A
公开(公告)日：1999-02-16
申请号：US477536
申请日：1995-06-07
申请人： David Nin-Kou Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
发明人： David Nin-Kou Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
IPC分类号： C23C16/04 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/509 , C23C16/54 , H01L21/314 , H01L21/316 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/402 , C23C16/455 , C23C16/45521 , C23C16/5096 , C23C16/54 , H01J37/32082 , H01J37/3244 , H01L21/31604
摘要： A method for protecting a selected area of a substrate against deposition on the selected area. The method includes the steps of flowing a process gas into a substrate processing chamber and flowing a purge gas to the selected area of the substrate to prevent the process gas from contacting the selected area or minimize contact between the process gas and the selected area. In various embodiments the selected area is a backside periphery of the substrate or the edge of the substrate. Also in these embodiments, the process gas is flowed into a deposition zone in order to deposit a thin film layer over an upper surface of the substrate, and a flow of the process and purge gas is established such that the process gas flows radically across the upper surface of the substrate, combines with the purge gas near an edge of the substrate and exits the processing chamber through an exhaust system.
摘要翻译：一种用于保护衬底的选定区域以防止沉积在所选区域上的方法。该方法包括以下步骤：将工艺气体流入衬底处理室并将吹扫气体流动到衬底的选定区域，以防止工艺气体接触选定区域或最小化工艺气体与所选区域之间的接触。在各种实施例中，所选择的区域是衬底的背面周边或衬底的边缘。同样在这些实施方案中，工艺气体流入沉积区，以便在衬底的上表面上沉积薄膜层，并建立工艺和吹扫气体的流动，使得工艺气体基本上流过基板的上表面与基板边缘附近的吹扫气体结合，并通过排气系统离开处理室。

10. 发明授权

US5755886A Apparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processing 失效
标题翻译：用于在沉积处理期间防止沉积气体接触衬底的选定区域的装置
公开(公告)号：US5755886A
公开(公告)日：1998-05-26
申请号：US483750
申请日：1995-06-07
申请人： David Nin-Kou Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
发明人： David Nin-Kou Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
IPC分类号： C23C16/04 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/509 , C23C16/54 , H01L21/314 , H01L21/316 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/402 , C23C16/455 , C23C16/45521 , C23C16/5096 , C23C16/54 , H01J37/32082 , H01J37/3244 , H01L21/31604
摘要： A substrate processing reactor capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning and other substrate processing operations all of which can either be performed separately or as part of in-situ multiple step processing. The reactor incorporates a uniform radial gas pumping system which enables uniform reactant gas flow across the wafer. Also included are upper and lower purge gas dispersers. The upper purge gas disperser directs purge gas flow downwardly toward the periphery of the wafer while the lower gas disperser directs purge gas across the backside of the wafer. The radial pumping gas system and purge gas dispersers sweep radially away from the wafer to prevent deposition external to the wafer and keep the chamber clean.
摘要翻译：能够进行热CVD，等离子体增强CVD，等离子体辅助回蚀，等离子体自清洁和其它基板处理操作的基板处理反应器，所有这些都可以单独进行或作为原位多步骤处理的一部分进行。该反应器包含均匀的径向气体泵送系统，其能够跨过晶片均匀的反应气体流动。还包括上部和下部吹扫气体分散器。上部吹扫气体分散器将吹扫气体向下流向晶片的周边，而下部气体分散器引导吹扫气体穿过晶片的背面。径向泵送气体系统和吹扫气体分散器径向扫掠离开晶片，以防止晶片外部沉积并保持室清洁。

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