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1. 发明授权

US5888304A Heater with shadow ring and purge above wafer surface 失效
标题翻译：加热器带有阴影环并在晶片表面上方吹扫
公开(公告)号：US5888304A
公开(公告)日：1999-03-30
申请号：US626789
申请日：1996-04-02
申请人： Salvador P. Umotoy , Alan F. Morrison , Karl A. Littau , Richard A. Marsh , Lawrence Chung-Lai Lei , Dale DuBois
发明人： Salvador P. Umotoy , Alan F. Morrison , Karl A. Littau , Richard A. Marsh , Lawrence Chung-Lai Lei , Dale DuBois
IPC分类号： C23C16/02 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/205 , H01L21/285 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/4585 , C23C16/46
摘要： This invention provides a method and apparatus for supporting a wafer in a processing chamber, where the wafer is supported and heated from below via a heater pedestal having a diameter larger than that of the wafer. A process fluid flowing downward toward the top of the wafer is inhibited from depositing near the wafer edge by a shadow ring. The shadow ring, which is placed over but does not contact the wafer, physically masks an annular strip of the wafer near its edge. The shadow ring inhibits deposition of process fluides on the wafer in two distinct ways. First, the shadow ring physically obstructs process gas, flowing downward from above the wafer, from depositing on the masked portion of the wafer. Second, the shadow ring is used to direct a flow of a purge gas to inhibit process gas from seeping under the shadow ring and depositing near the wafer edge. A purge gas manifold is defined by a cylindrical annulus located concentrically below the shadow ring and circumscribing the heater pedestal. A purge gap between the wafer and the shadow ring forms the outlet of the purge gas manifold. The purge gas flows out of the purge gap, inhibiting the process gas from entering the purge gap, and thus further inhibiting deposition on the masked portion of the wafer.
摘要翻译：本发明提供了一种用于在处理室中支撑晶片的方法和装置，其中通过直径大于晶片直径的加热器基座从下方支撑晶片并从其下被加热。向晶片顶部向下流动的工艺流体被阴影环抑制在晶片边缘附近沉积。放置在但不接触晶片的阴影环在其边缘附近物理屏蔽晶片的环形条。阴影环以两种截然不同的方式阻止了工艺流程在晶片上沉积。首先，阴影环物理地阻挡从晶片上方向下流动的工艺气体沉积在晶片的掩蔽部分上。第二，阴影环用于引导吹扫气体的流动，以阻止处理气体在阴影环下渗出并沉积在晶片边缘附近。吹扫气体歧管由同心地位于阴影环下方并围绕加热器基座的圆柱形环限定。晶片和阴影环之间的吹扫间隙形成吹扫气体歧管的出口。净化气体流出吹扫间隙，阻止处理气体进入吹扫间隙，从而进一步抑制沉积在晶片的掩蔽部分上。

2. 发明授权

US5766365A Removable ring for controlling edge deposition in substrate processing apparatus 失效
标题翻译：用于控制基板处理装置中的边缘沉积的可拆卸环
公开(公告)号：US5766365A
公开(公告)日：1998-06-16
申请号：US472220
申请日：1995-06-07
申请人： Salvador P. Umotoy , Alan F. Morrison , Karl A. Littau , Richard A. Marsh , Lawrence Chung-Lai Lei
发明人： Salvador P. Umotoy , Alan F. Morrison , Karl A. Littau , Richard A. Marsh , Lawrence Chung-Lai Lei
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/205 , H01L21/28 , H01L21/285 , H01L21/68 , H01L21/683 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/458 , C23C16/4583 , C23C16/4585 , C23C16/46 , H01L21/67103 , H01L21/68 , H01L21/6833 , H01L21/68735 , H01L21/68792
摘要： A substrate processing apparatus comprising a processing chamber in which a substrate support is located. The substrate support, which is in the form of a heater pedestal, has a surface dimensioned to receive the substrate, and is circumscribed by a removable purge ring which defines an annulus between itself and the pedestal. At the outer edge of the pedestal is a purge gas manifold, in the form of a cavity between the purge ring and the pedestal. The lower end of the manifold is sealed by means of a mechanical seal that is formed at process temperature as the pedestal expands from heating and comes into contact with the purge ring's lower edge. The upper end of the manifold opens into the annulus defined by the purge ring and the pedestal. The manifold is arranged so that during processing, purge gas is injected into the manifold and projected toward the edge of a substrate received on the surface of the pedestal. This gas moves upwards through the annulus defined between the purge ring and the substrate support. Consequently, processing gas is prevented from contacting the extreme edge portion of the substrate. This reduces unwanted deposition on the peripheral edge and lower surface of the substrate.
摘要翻译：一种基板处理装置，包括其中位于基板支撑件的处理室。处于加热器基座形式的衬底支撑件具有尺寸适于接收衬底的表面，并且由可拆卸的清除环限定，该清除环在其与底座之间限定环形空间。在基座的外边缘处是净化气体歧管，其形式为清洗环和基座之间的空腔。歧管的下端通过机械密封进行密封，机械密封在工艺温度下形成，因为基座从加热膨胀并与清洗环的下边缘接触。歧管的上端开口进入由清洗环和基座限定的环形空间。歧管被布置成使得在处理期间，吹扫气体被注入到歧管中并且朝着接收在基座的表面上的基板的边缘突出。该气体向上移动通过清洗环和衬底支撑件之间限定的环形空间。因此，防止处理气体与基板的最外缘部分接触。这减少了衬底的外围边缘和下表面上的不希望的沉积。

3. 发明授权

US5856240A Chemical vapor deposition of a thin film onto a substrate 失效
标题翻译：将薄膜化学气相沉积到基底上
公开(公告)号：US5856240A
公开(公告)日：1999-01-05
申请号：US342522
申请日：1994-11-21
申请人： Ashok Sinha , Mei Chang , Ilya Perlov , Karl A. Littau , Alan F. Morrison , Lawrence Chung-Lai Lei
发明人： Ashok Sinha , Mei Chang , Ilya Perlov , Karl A. Littau , Alan F. Morrison , Lawrence Chung-Lai Lei
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/68 , H01L21/687 , C23C14/00
CPC分类号： C23C16/45519 , C23C16/4412 , C23C16/45521 , C23C16/458 , C23C16/4583 , C23C16/4585 , C23C16/46 , H01L21/67103 , H01L21/68 , H01L21/68721 , H01L21/68728 , H01L21/68735 , H01L21/6875 , H01L21/68785 , H01L21/68792 , Y10S438/935
摘要： Vacuum CVD chambers are disclosed which provide a more uniformly deposited thin film on a substrate. The chamber susceptor mount for the substrate is heated resistively with a single coil firmly contacting the metal of the susceptor on all sides, providing uniform temperatures across the susceptor mount for a substrate. A purge gas line is connected to openings in the susceptor outside of the periphery of the substrate to prevent edge and backside contamination of the substrate. A vacuum feed line mounts the substrate to the susceptor plate during processing. A refractory purge guide, or a plurality of placement pins, maintain a fixed gap passage for the purge gases to pass alongside the edge of the wafer and into the processing area of the chamber. An exhaust pumping plate improves the uniformity of exhaustion of spent gases from the chamber.
摘要翻译：公开了真空CVD室，其在衬底上提供更均匀地沉积的薄膜。用于衬底的腔室基座安装件被电阻加热，单个线圈在基座的所有侧面上牢固地接触基座的金属，从而在基座的基座上提供均匀的温度。吹扫气体管线连接到基座外部的基座上的开口，以防止衬底的边缘和背面污染。在加工过程中，真空进料管将基板安装到基座板上。耐火吹扫引导件或多个安置销保持固定的间隙通道，以使净化气体沿着晶片的边缘并入腔室的处理区域中。排气泵板改善了来自腔室的废气排出的均匀性。

4. 发明授权

US06461435B1 Showerhead with reduced contact area 有权
标题翻译：淋浴头接触面积减小
公开(公告)号：US06461435B1
公开(公告)日：2002-10-08
申请号：US09603117
申请日：2000-06-22
申请人： Karl A. Littau , Bevan Vo , Salvador P. Umotoy , Son N. Trinh , Chien-Teh Kao , Ken Kaung Lai , Bo Zheng , Ping Jian , Siqing Lu , Anzhong Chang
发明人： Karl A. Littau , Bevan Vo , Salvador P. Umotoy , Son N. Trinh , Chien-Teh Kao , Ken Kaung Lai , Bo Zheng , Ping Jian , Siqing Lu , Anzhong Chang
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/455 , H01J37/3244
摘要： A showerhead for distributing gases in a semiconductor process chamber. In one embodiment, a showerhead comprising a perforated center portion, a mounting portion circumscribing the perforated center portion and a plurality of bosses extending from the mounting portion each having a hole disposed therethrough is provided. Another embodiment of the invention provides a showerhead that includes a mounting portion having a first side circumscribing a perforated center portion. A ring extends from the first side of the mounting portion. A plurality of mounting holes are disposed in the mounting portion radially to either side of the ring. The showerhead provides controlled thermal transfer between the showerhead and chamber lid resulting in less deposition on the showerhead.
摘要翻译：用于在半导体处理室中分配气体的喷头。在一个实施例中，提供了一种喷头，包括穿孔中心部分，围绕穿孔中心部分的安装部分和从安装部分延伸的多个凸起，每个凸起具有穿过其中设置的孔。本发明的另一个实施例提供了一种喷头，其包括具有围绕穿孔中心部分的第一侧面的安装部分。环从安装部分的第一侧延伸。多个安装孔径向地设置在安装部分的环的任一侧。淋浴头在喷头和室盖之间提供受控的热转印，从而在喷头上沉积较少。

5. 发明授权

US5516367A Chemical vapor deposition chamber with a purge guide 失效
标题翻译：具有清洗导管的化学气相沉积室
公开(公告)号：US5516367A
公开(公告)日：1996-05-14
申请号：US342670
申请日：1994-11-21
申请人： Lawrence C. Lei , Ilya Perlov , Karl A. Littau , Alan F. Morrison , Mei Chang , Ashok K. Sinha
发明人： Lawrence C. Lei , Ilya Perlov , Karl A. Littau , Alan F. Morrison , Mei Chang , Ashok K. Sinha
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/68 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45519 , C23C16/4412 , C23C16/45521 , C23C16/458 , C23C16/4583 , C23C16/4585 , C23C16/46 , H01L21/67103 , H01L21/68 , H01L21/68721 , H01L21/68728 , H01L21/68735 , H01L21/6875 , H01L21/68785 , H01L21/68792 , Y10S438/935
摘要： Vacuum CVD chambers are disclosed which provide a more uniformly deposited thin film on a substrate. The chamber susceptor mount for the substrate is heated resistively with a single coil firmly contacting the metal of the susceptor on all sides, providing uniform temperatures across the susceptor mount for a substrate. A purge gas line is connected to openings in the susceptor outside of the periphery of the substrate to prevent edge and backside contamination of the substrate. A vacuum feed line mounts the substrate to the susceptor plate during processing. A refractory purge guide, or a plurality of placement pins, maintain a fixed gap passage for the purge gases to pass alongside the edge of the wafer and into the processing area of the chamber. An exhaust pumping plate improves the uniformity of exhaustion of spent gases from the chamber.
摘要翻译：公开了真空CVD室，其在衬底上提供更均匀地沉积的薄膜。用于衬底的腔室基座安装件被电阻加热，单个线圈在基座的所有侧面上牢固地接触基座的金属，从而在基座的基座上提供均匀的温度。吹扫气体管线连接到基座外部的基座上的开口，以防止衬底的边缘和背面污染。在加工过程中，真空进料管将基板安装到基座板上。耐火吹扫引导件或多个安置销保持固定的间隙通道，以使净化气体沿着晶片的边缘并入腔室的处理区域中。排气泵板改善了来自腔室的废气排放的均匀性。

6. 发明申请

US20110141206A1 STACKED SLICE PRINTHEAD 有权
标题翻译：堆叠拼贴
公开(公告)号：US20110141206A1
公开(公告)日：2011-06-16
申请号：US12639347
申请日：2009-12-16
申请人： Patrick C. P. Cheung , Karl A. Littau , Michael Y. Young , Steven A. Buhler
发明人： Patrick C. P. Cheung , Karl A. Littau , Michael Y. Young , Steven A. Buhler
IPC分类号： B41J2/045
CPC分类号： B41J2/14233 , B41J2/161 , B41J2/1623 , B41J2/1629
摘要： A side-firing printhead comprises a stack that includes a plurality of slices, wherein each slice includes a PCB trigger layer and a diaphragm layer, the PCB trigger layer controls the flow of ink from the diaphragm layer, a first side of the diaphragm layer includes at least one cavity that delivers ink via one or more aperture braces. An aperture plate is coupled to one side of the stack to interface to the diaphragm layers contained therein, wherein the aperture plate contains a plurality of apertures that are located at each aperture brace. A first bracket is disposed on the top of the stack and a second bracket is disposed on the bottom of the stack, wherein at least one fastener couples the second bracket to the first bracket such that a predetermined amount of pressure is applied to the stack.
摘要翻译：侧面喷射打印头包括包括多个切片的堆叠，其中每个切片包括PCB触发层和隔膜层，所述PCB触发层控制来自所述隔膜层的墨的流动，所述隔膜层的第一侧包括至少一个通过一个或多个孔径支架输送墨水的空腔。孔板联接到堆叠的一侧以与包含在其中的隔膜层相接合，其中孔板包含位于每个孔支架处的多个孔。第一支架设置在堆叠的顶部，并且第二支架设置在堆叠的底部，其中至少一个紧固件将第二支架联接到第一支架，使得预定量的压力施加到堆叠。

7. 发明授权

US07901130B2 Method and apparatus for calibrating a thermistor 有权
标题翻译：用于校准热敏电阻的方法和装置
公开(公告)号：US07901130B2
公开(公告)日：2011-03-08
申请号：US12497993
申请日：2009-07-06
申请人： Scott Jong Ho Limb , Michael Yu Tak Young , Karl A. Littau
发明人： Scott Jong Ho Limb , Michael Yu Tak Young , Karl A. Littau
IPC分类号： G01K15/00
CPC分类号： G01K7/223 , G01K15/00 , Y10T29/49085
摘要： The presently described embodiments are directed to a calibration method and system for thin film thermistors that are locally heated with integrated thin film heaters. Initially, print head temperature is either measured or referenced. Then, transient thermistor resistances are measured and used to determine the thermistor resistance at a higher temperature. Notably, this calibration method is advantageously implemented as a step of an existing process without having to expose the print heads to operating temperatures. In some implementations of the presently described embodiments, trimming of the thermistors may be required once calibrated.
摘要翻译：目前描述的实施例涉及用集成薄膜加热器局部加热的薄膜热敏电阻的校准方法和系统。最初，打印头温度是测量或参考。然后，测量瞬态热敏电阻电阻并用于确定较高温度下的热敏电阻电阻。值得注意的是，该校准方法有利地被实现为现有工艺的步骤，而不必将打印头暴露于工作温度。在目前描述的实施例的一些实施方案中，一旦校准就可能需要修整热敏电阻。

8. 发明申请

US20100059377A1 SYSTEM AND METHOD FOR RECOVERY OF CO2 BY AQUEOUS CARBONATE FLUE GAS CAPTURE AND HIGH EFFICIENCY BIPOLAR MEMBRANE ELECTRODIALYSIS 有权
标题翻译：通过碳酸气体气体捕获和高效双极膜电解法回收二氧化碳的系统和方法
公开(公告)号：US20100059377A1
公开(公告)日：2010-03-11
申请号：US12206424
申请日：2008-09-08
申请人： Karl A. Littau , Francisco E. Torres
发明人： Karl A. Littau , Francisco E. Torres
IPC分类号： B01D61/42 , B01D61/46 , B01D61/52
CPC分类号： B01D61/445 , B01D53/62 , B01D53/77 , B01D53/96 , B01D2251/306 , B01D2251/606 , B01D2257/504 , C02F1/4693 , Y02C10/04
摘要： A system and method for recovery of CO2 includes an aqueous capture device having a capture solution. The aqueous capture device is arranged to receive gas and to capture components from the gas including at least CO2. An electrodialysis unit in operative connection with the capture device performs an electrodialysis operation on the capture solution including at least the CO2, wherein a CO2 rich process stream and a regenerated capture solution are generated from the capture solution including at least the CO2. The CO2 rich process stream is a pressurized process stream at a pressure which maintains the CO2 substantially within the CO2 rich process stream, while in the electrodialysis unit. In another alternative, at least the pH of the capture stream is controlled.
摘要翻译：用于回收CO 2的系统和方法包括具有捕获溶液的水性捕获装置。水性捕获装置被布置成接收气体并从包括至少CO 2的气体中捕获组分。与采集装置可操作地连接的电渗析装置对包括至少二氧化碳的捕获溶液进行电渗析操作，其中从包含至少二氧化碳的捕获溶液产生富CO 2的工艺流和再生的捕获溶液。富CO2过程流是在电渗析单元中将CO 2基本维持在富CO2过程流内的压力下的加压工艺流。在另一个替代方案中，至少捕获流的pH被控制。

9. 发明申请

US20090156003A1 METHOD FOR DEPOSITING TUNGSTEN-CONTAINING LAYERS BY VAPOR DEPOSITION TECHNIQUES 失效
标题翻译：通过蒸发沉积技术沉积含钨层的方法
公开(公告)号：US20090156003A1
公开(公告)日：2009-06-18
申请号：US12335976
申请日：2008-12-16
申请人： MING XI , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
发明人： MING XI , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
IPC分类号： H01L21/285 , H01L21/44
CPC分类号： C23C16/0272 , C23C16/34 , C23C16/45525 , C23C16/45527 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28562 , H01L21/76843 , H01L21/76876
摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten-containing layer by sequentially exposing a substrate to a processing gas and a tungsten-containing gas during an atomic layer deposition process, wherein the processing gas comprises a boron-containing gas and a nitrogen-containing gas, and forming a tungsten bulk layer over the tungsten-containing layer by exposing the substrate to a deposition gas comprising the tungsten-containing gas and a reactive precursor gas during a chemical vapor deposition process. In one example, the tungsten-containing layer and the tungsten bulk layer are deposited within the same processing chamber.
摘要翻译：在一个实施例中，提供了一种在基板上形成含钨材料的方法，其包括通过在原子层沉积工艺期间将衬底顺序地暴露于处理气体和含钨气体来形成含钨层，其中处理气体包括含硼气体和含氮气体，并且在化学气体中通过将衬底暴露于包含含钨气体和反应性前体气体的沉积气体而在含钨层上形成钨体层沉积工艺。在一个实例中，含钨层和钨体层沉积在相同的处理室内。

10. 发明授权

US07234214B2 Methods for making thick film elements 有权
标题翻译：制作厚膜元件的方法
公开(公告)号：US07234214B2
公开(公告)日：2007-06-26
申请号：US11084579
申请日：2005-03-18
申请人： Baomin Xu , Steven A. Buhler , Michael C. Weisberg , William S. Wong , Scott E. Solberg , Karl A. Littau , John S. Fitch , Scott A. Elrod
发明人： Baomin Xu , Steven A. Buhler , Michael C. Weisberg , William S. Wong , Scott E. Solberg , Karl A. Littau , John S. Fitch , Scott A. Elrod
IPC分类号： H04R17/00
CPC分类号： B41J2/161 , B41J2/1623 , B41J2/1632 , B41J2/1634 , B41J2/1637 , B41J2/1646 , H01L41/313 , H01L41/314 , H01L41/331 , H01L2221/68368 , Y10T29/42 , Y10T29/435 , Y10T29/49128 , Y10T29/4913 , Y10T29/49133 , Y10T29/49155 , Y10T29/4981
摘要： A method of producing at least one thick film element, including depositing a material on a surface of at least one first substrate to form at least one thick film element structure having a thickness of approximately greater than 10 μm to 100 μm. Then, then the at least one thick film element structure is bonded to a second substrate, and the at least one first substrate is removed from the at least one thick film element structure using a lift-off process employing radiation energy. The lift-off process including emitting, from a radiation source, a radiation beam through the first substrate to an attachment interface formed between the first substrate and the at least one thick film element structure at the first surface of the first substrate. The first substrate being substantially transparent at the wavelength of the radiation beam, permitting the radiation beam to generate sufficient energy at the interface to break the attachment.
摘要翻译：一种生产至少一个厚膜元件的方法，包括在至少一个第一基底的表面上沉积材料以形成至少一个厚度大约在10至100μm的厚膜元件结构。然后，将至少一个厚膜元件结构接合到第二基板，并且使用采用辐射能的剥离工艺将至少一个第一基板从至少一个厚膜元件结构移除。剥离过程包括从辐射源将辐射束从第一衬底发射到在第一衬底的第一表面处形成在第一衬底和至少一个厚膜元件结构之间的附接界面。第一衬底在辐射束的波长处基本上是透明的，允许辐射束在界面处产生足够的能量以破坏附件。

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