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1. 发明授权

US07014960B2 Chelation cleaning process for repairing photomasks 失效
标题翻译：用于修复光掩模的螯合清洁工艺
公开(公告)号：US07014960B2
公开(公告)日：2006-03-21
申请号：US10635982
申请日：2003-08-07
申请人： Same-Ting Chen
发明人： Same-Ting Chen
IPC分类号： G03F9/00
CPC分类号： G03F1/74
摘要： The present invention relates to a method for repairing a photomask by removing a residual defect in the photomask, the method including removing the defect area by gallium chelation with a water-soluble amine polymer.
摘要翻译：本发明涉及通过去除光掩模中的残留缺陷来修复光掩模的方法，该方法包括用水溶性胺聚合物通过镓螯合除去缺陷区域。

2. 发明授权

US06841311B1 Cleaning process for phase shift masks 失效
标题翻译：相移掩模的清洁过程
公开(公告)号：US06841311B1
公开(公告)日：2005-01-11
申请号：US10099029
申请日：2002-03-15
申请人： Same-Ting Chen , Cheng-Shien Lee , Chin-Wang Hu , Chieh-Yuan Cheng , Hsiang-Chien Hsu , Tzy-Ying Lin , Wen-Rong Huang
发明人： Same-Ting Chen , Cheng-Shien Lee , Chin-Wang Hu , Chieh-Yuan Cheng , Hsiang-Chien Hsu , Tzy-Ying Lin , Wen-Rong Huang
IPC分类号： G03F1/26 , G03F1/82 , G03F9/00 , H01L21/00
CPC分类号： G03F1/82 , G03F1/26
摘要： A new sequence and chemical composition for cleaning the surface of a halftone shift masks that use MoSiON as shifter material is provided. For purposes of repair or rework, the pellicle is removed from the mask so that the mask can be accessed. After the rework or repair has been completed, a new clean process is performed, for the new clean process the sequence of steps that is conventionally performed has been modified. After the new clean process has been completed, the pellicle is reinstalled over the surface of the mask.
摘要翻译：提供了一种用于清洁使用MoSiON作为移位材料的半色调移位掩模的表面的新的顺序和化学组成。为了维修或返工的目的，将防护薄膜组件从掩模中取出，以便可以访问掩模。返修或修理完成后，执行一个新的清洁过程，对于新的清洁过程，常规执行的步骤顺序已被修改。新的清洁过程完成后，防护薄膜组件重新安装在面罩的表面上。

3. 发明授权

US5360927A Process for the preparation of monohydrated sodium phenylpyruvate 失效
标题翻译：一水合苯丙酮酸钠的制备方法
公开(公告)号：US5360927A
公开(公告)日：1994-11-01
申请号：US185714
申请日：1994-01-24
申请人： Jin-Tann Chen , Same-Ting Chen , Hsin Tsai
发明人： Jin-Tann Chen , Same-Ting Chen , Hsin Tsai
IPC分类号： C07C51/00 , C07C51/41 , C07C59/74
CPC分类号： C07C51/00 , C07C51/41
摘要： A process for the preparation of monohydrated sodium phenylpyruvate comprises reacting benzaldehyde with the stoichiometric quantity of hydantoin in the aqueous medium in the presence of a catalytic quantity of a primary or secondary amine at high temperature, treating the reaction mixture with an excess of sodium hydroxide at high temperature, adding sodium chloride to the sodium hydroxide-treated solution, acidifying the so obtained solution with concentrated hydrochloric acid, and washing the formed precipitate with methanol.
摘要翻译：制备单水合苯基苯丙酮酸盐的方法包括在催化量的伯胺或仲胺存在下，在高温下，使苯甲醛与化学计量量的乙内酰脲在水性介质中反应，用过量的氢氧化钠处理反应混合物将高氯酸钠加入到氢氧化钠处理溶液中，用浓盐酸酸化所得溶液，用甲醇洗涤形成的沉淀。

4. 发明授权

US07045256B2 Quartz damage repair method for high-end mask 有权
标题翻译：石英损伤修复方法为高档面膜
公开(公告)号：US07045256B2
公开(公告)日：2006-05-16
申请号：US10425322
申请日：2003-04-29
申请人： Same-Ting Chen , Zy Ying Lin
发明人： Same-Ting Chen , Zy Ying Lin
IPC分类号： G03F9/00 , G03C5/00
CPC分类号： G03F1/72
摘要： A method is provided for repairing photolithographic exposure masks. A focused ion-beam exposure of the surface of the exposure mask is used to purposely “damage” this surface over the area where opaque or light-blocking material is required to be present.
摘要翻译：提供了修复光刻曝光掩模的方法。曝光掩模的表面的聚焦离子束曝光用于在需要存在不透明或遮光材料的区域上有目的地“损坏”该表面。

5. 发明申请

US20050031965A1 Chelation cleaning process for repairing photomasks 失效
标题翻译：用于修复光掩模的螯合清洁工艺
公开(公告)号：US20050031965A1
公开(公告)日：2005-02-10
申请号：US10635982
申请日：2003-08-07
申请人： Same-Ting Chen
发明人： Same-Ting Chen
IPC分类号： A61N5/00 , G03F1/00 , G03F9/00 , G21G5/00
CPC分类号： G03F1/74
摘要： The present invention relates to a method for repairing a photomask by removing a residual defect in the photomask, the method including removing the defect area by gallium chelation with a water-soluble amine polymer.
摘要翻译：本发明涉及通过去除光掩模中的残留缺陷来修复光掩模的方法，该方法包括用水溶性胺聚合物通过镓螯合除去缺陷区域。

6. 发明授权

US06660436B1 OPC-like repair method for attenuated phase shift masks 有权
标题翻译：用于衰减相移掩模的类OPC修复方法
公开(公告)号：US06660436B1
公开(公告)日：2003-12-09
申请号：US09953609
申请日：2001-09-17
申请人： Same-Ting Chen , Wen-Hong Huang , Wen-Reng Huang
发明人： Same-Ting Chen , Wen-Hong Huang , Wen-Reng Huang
IPC分类号： G03F900
CPC分类号： G03F1/72 , G03F1/26 , G03F1/36
摘要： A new process for repairing an attenuated phase-shifting photomask is described. A contact hole pattern is provided on an attenuating phase-shifting photomask. An aerial image is obtained of the contact hole pattern. The critical dimension of the contact hole pattern is predicted from the intensity of the aerial image. Thereafter, the critical dimension is adjusted by forming non-printable optical proximity or scattering bar correction patterns around abnormal defects in the contact hole pattern on the attenuated phase-shifting photomask. The non-printable correction patterns enhance or cancel light intensity to correct the adnormal defects.
摘要翻译：描述了修复衰减相移光掩模的新工艺。在衰减的相移光掩模上设置接触孔图案。获得接触孔图案的空中图像。接触孔图案的临界尺寸是根据空中图像的强度预测的。此后，通过在衰减的相移光掩模上的接触孔图案中的异常缺陷周围形成不可打印的光学邻近或散射棒校正图案来调整临界尺寸。不可打印的校正图案增强或消除光强度以校正异常缺陷。

7. 发明授权

US06555277B1 Quartz damage repair method for high-end mask 有权
标题翻译：石英损伤修复方法为高档面膜
公开(公告)号：US06555277B1
公开(公告)日：2003-04-29
申请号：US10134822
申请日：2002-04-26
申请人： Same-Ting Chen , Tzy-Ying Lin , Wen-Rong Huang
发明人： Same-Ting Chen , Tzy-Ying Lin , Wen-Rong Huang
IPC分类号： G03F900
CPC分类号： G03F1/72
摘要： In accordance with the objectives of the invention a new method is provided for repairing photolithographic exposure masks. The invention uses an etch function of a conventional mask repair tool. The invention addresses defects that occur in a pattern of opaque material (such as chrome) created over the surface of an exposure mask whereby an (undesired) opening exists in the opaque material. The invention uses a focused E-beam exposure of the surface of the exposure mask to purposely “damage” this surface over the area where the opaque material is required to be present. Repair accuracy is in this manner easy to control, the conventional problem of peeling of the opaque or light sensitive material is eliminated.
摘要翻译：根据本发明的目的，提供了一种用于修复光刻曝光掩模的新方法。本发明使用常规掩模修复工具的蚀刻功能。本发明解决了在曝光掩模的表面上产生的不透明材料（例如铬）的图案中发生的缺陷，由此在不透明材料中存在（不期望的）开口。本发明使用曝光掩模的表面的聚焦电子束曝光来有目的地在要求存在不透明材料的区域上“损坏”该表面。以这种方式易于控制的修复精度，消除了不透明或光敏材料剥离的常规问题。

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