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    • 3. 发明授权
    • Dual channel microwave transmit/receive module for an active aperture of
a radar system
    • 双通道微波发射/接收模块,用于雷达系统的主动孔径
    • US6094161A
    • 2000-07-25
    • US456407
    • 1999-12-08
    • John W. CassenStephanie A. ParksEdward L. Rich, IIIGary N. BonadiesGary L. FerrellJohn S. FisherJohn W. GipprichJohn D. GorntoDaniel J. HeffernanDavid A. HerlihyAndrew J. PilotoPatrick K. RichardDavid W. StrackScott K. Suko
    • John W. CassenStephanie A. ParksEdward L. Rich, IIIGary N. BonadiesGary L. FerrellJohn S. FisherJohn W. GipprichJohn D. GorntoDaniel J. HeffernanDavid A. HerlihyAndrew J. PilotoPatrick K. RichardDavid W. StrackScott K. Suko
    • G01S7/28G01S7/03H01Q21/00H04B1/40H04B1/48
    • G01S7/03G01S7/032H01Q21/0025
    • Two discrete transmit/receive (T/R) channels are implemented in a single common T/R module package having the capability of providing combined functions, control and power conditioning while utilizing a single multi-cavity, multi-layer substrate comprised of high temperature cofired ceramic (HTCC) layers. The ceramic layers have outer surfaces including respective metallization patterns of ground planes and stripline conductors as well as feedthroughs or vertical vias formed therein for providing three dimensional routing of both shielded RF and DC power and logic control signals so as to configure, among other things, a pair of RF manifold signal couplers which are embedded in the substrate and which transition to a multi-pin blind mate press-on RF connector assembly at the front end of the package. DC and logic input/output control signals are connected to a plurality of active circuit components including application specific integrated circuits (ASICs) and monolithic microwave integrated circuit chips (MMICs) via spring contact pads at the rear of the package. The MMICs which generate substantially all of the heat are located in multi-level cavities formed in the substrate and are bonded directly to a generally flat a heat sink plate which is secured to the bottom of the substrate and acts as a thermal interface to an external heat exchanger such as a cold plate. DC power conditioning is also provided by a capacitive bank type of energy storage subassembly externally attached to the rear of the module package for supplying supplementary power to the module during peak power operation. The T/R module is one module of an array of like T/R modules coupled to an active aperture of a radar system.
    • 两个离散的发射/接收(T / R)信道在单个公共T / R模块封装中实现,其具有提供组合功能,控制和功率调节的能力,同时利用单个多腔多层衬底,其包括高温 共烧陶瓷(HTCC)层。 陶瓷层具有包括接地面和带状线导体的相应金属化图案以及形成在其中的馈通或垂直通孔的外表面,用于提供屏蔽RF和DC电力和逻辑控制信号两者的三维布线,以便除其他外, 一对RF歧管信号耦合器,其嵌入在衬底中并且转变到封装前端处的多引脚盲配合压接RF连接器组件。 DC和逻辑输入/输出控制信号通过封装后部的弹簧接触焊盘连接到包括专用集成电路(ASIC)和单片微波集成电路芯片(MMIC)的多个有源电路部件。 产生基本上所有热量的MMIC位于形成在基板中的多层空腔中,并且直接结合到大致平坦的散热板上,该散热板固定到基板的底部并用作与外部的热接口 换热器如冷板。 直流功率调节也由外部连接到模块封装后部的电容式储能型存储子组件提供,用于在峰值功率操作期间向模块提供补充功率。 T / R模块是耦合到雷达系统的有效孔径的类似T / R模块的阵列的一个模块。
    • 7. 发明授权
    • Level shifting switch driver on GaAs pHEMT
    • GaAs pHEMT上的电平转换开关驱动器
    • US07863964B2
    • 2011-01-04
    • US11964886
    • 2007-12-27
    • Scott K. SukoAndrew R. PasserelliGregory D. Nachtreib
    • Scott K. SukoAndrew R. PasserelliGregory D. Nachtreib
    • H03K17/00
    • H03K17/693H03K19/018557
    • A radio frequency semiconductor switching device (S) is formed on an MMIC structure (C) including a switching circuit element (12) having four semiconductor switching units (68, 70) with each adapted for receiving a gate control signal. A level shift circuit (10) generates a biasing voltage signal communicated of the switching units (68, 70) for biasing the switching units (68), and provides an output that swings between approximately one diode drop above ground and a negative voltage to bias the switching circuit elements (68 and 70) for reduced loss. The level shift circuit (10) is responsive to an externally provided control signal (58). The switching units (68, 70) are formed into a grouping of at least, a first and a second set (76, 78) of interconnected semiconductor switching units (68, 70) with each set (76, 78) having gates of at least two of the interconnected switching units (68, 70) connected with the level shift circuit output (60, 62). Both the switching units (68, 70) and the level shift circuit (10) are formed on the MMIC structure (C).
    • 射频半导体开关器件(S)形成在包括具有四个半导体开关单元(68,70)的开关电路元件(12)的MMIC结构(C)上,每个半导体开关单元适于接收栅极控制信号。 电平移位电路(10)产生用于偏置开关单元(68)的开关单元(68,70)通信的偏置电压信号,并提供在地面上大约一个二极管压降与负电压之间摆动的输出,以偏置 开关电路元件(68和70)用于减少损耗。 电平移位电路(10)响应外部提供的控制信号(58)。 开关单元(68,70)形成为至少互连的半导体开关单元(68,70)的第一组和第二组(76,78)的分组,每组具有栅极的组(76,78) 与电平移位电路输出(60,62)连接的至少两个互连的开关单元(68,70)。 开关单元(68,70)和电平移位电路(10)均形成在MMIC结构(C)上。
    • 8. 发明授权
    • Dual channel microwave transmit/receive module for an active aperture of a radar system
    • 双通道微波发射/接收模块,用于雷达系统的主动孔径
    • US06278400B1
    • 2001-08-21
    • US09450905
    • 1999-11-29
    • John W. CassenEdward L. Rich, IIIGary N. BonadiesJohn S. FisherJohn W. GipprichJohn D. GorntoDaniel J. HeffernanDavid A. HerlihyScott C. TollePatrick K. RichardDavid W. StrackScott K. SukoTimothy L. EderChad E. WilsonGary L. FerrellStephanie A. Parks
    • John W. CassenEdward L. Rich, IIIGary N. BonadiesJohn S. FisherJohn W. GipprichJohn D. GorntoDaniel J. HeffernanDavid A. HerlihyScott C. TollePatrick K. RichardDavid W. StrackScott K. SukoTimothy L. EderChad E. WilsonGary L. FerrellStephanie A. Parks
    • G01S728
    • G01S7/03G01S7/032H01Q21/0025
    • Two discrete transmit/receive (T/R) channels are implemented in a single common T/R module package having the capability of providing combined functions, control and power conditioning while utilizing a single multi-cavity, multi-layer substrate comprised of high or low temperature cofired ceramic layers. The ceramic layers have outer surfaces including respective metallization patterns of ground planes and stripline conductors as well as feedthroughs or vertical vias formed therein for providing three dimensional routing of both shielded RF and DC power and logic control signals so as to configure, among other things, a pair of RF manifold signal couplers which are embedded in the substrate and which transition to a multi-pin blind mate press-on RF connector assembly at the front end of the package. DC and logic input/output control signals are connected to a plurality of active circuit components including application specific integrated circuits (ASICs) and monolithic microwave integrated circuit chips (MMICs) via spring contact pads at the rear of the package. An RF connector assembly for coupling transmit and receive signals to and from the module is located at the front of the package. The RF transmit power amplifiers which generate most of the heat in the module package are located in a first pair of cavities formed in the substrate directly behind the RF connector assembly and are mounted directly on a pair of flat heat sink plates which are secured to the bottom of the substrate and acts as a thermal interface to an external heat exchanger such as a cold plate. A second pair of cavities in which are located the RF receive signal amplifiers and their respective receiver protector elements, is located beside the first pair of cavities directly behind the RF connector for reducing RF signal loss.
    • 在单个公共T / R模块封装中实现两个离散的发送/接收(T / R)信道,其具有提供组合功能,控制和功率调节的能力,同时利用单个多腔多层衬底,其包括高或 低温共烧陶瓷层。 陶瓷层具有包括接地面和带状线导体的相应金属化图案以及形成在其中的馈通或垂直通孔的外表面,用于提供屏蔽RF和DC电力和逻辑控制信号两者的三维布线,以便除其他外, 一对RF歧管信号耦合器,其嵌入在衬底中并且转变到封装前端处的多引脚盲配合压接RF连接器组件。 DC和逻辑输入/输出控制信号通过封装后部的弹簧接触焊盘连接到包括专用集成电路(ASIC)和单片微波集成电路芯片(MMIC)的多个有源电路部件。 用于将模块的发送和接收信号耦合到RF模块的RF连接器组件位于封装的前部。 在模块封装中产生大部分热量的RF发射功率放大器位于直接位于RF连接器组件后面的衬底中形成的第一对空腔中,并直接安装在一对平坦的散热板上, 并且用作与诸如冷板之类的外部热交换器的热界面。 位于RF接收信号放大器及其各自的接收器保护器元件的第二对空腔位于RF连接器正后方的第一对空腔旁边,用于减少RF信号损失。
    • 10. 发明申请
    • LEVEL SHIFTING SWITCH DRIVER ON GAAS PHEMPT
    • 水平移动开关驱动器在GAAS PHEMPT
    • US20090167409A1
    • 2009-07-02
    • US11964886
    • 2007-12-27
    • Scott K. SukoAndrew R. PasserelliGregory D. Nachtreib
    • Scott K. SukoAndrew R. PasserelliGregory D. Nachtreib
    • H03K17/687
    • H03K17/693H03K19/018557
    • A radio frequency semiconductor switching device (S) is formed on an MMIC structure (C) including a switching circuit element (12) having four semiconductor switching units (68, 70) with each adapted for receiving a gate control signal. A level shift circuit (10) generates a biasing voltage signal communicated of the switching units (68, 70) for biasing the switching units (68), and provides an output that swings between approximately one diode drop above ground and a negative voltage to bias the switching circuit elements (68 and 70) for reduced loss. The level shift circuit (10) is responsive to an externally provided control signal (58). The switching units (68, 70) are formed into a grouping of at least, a first and a second set (76, 78) of interconnected semiconductor switching units (68, 70) with each set (76, 78) having gates of at least two of the interconnected switching units (68, 70) connected with the level shift circuit output (60, 62). Both the switching units (68, 70) and the level shift circuit (10) are formed on the MMIC structure (C).
    • 射频半导体开关器件(S)形成在包括具有四个半导体开关单元(68,70)的开关电路元件(12)的MMIC结构(C)上,每个半导体开关单元适于接收栅极控制信号。 电平移位电路(10)产生用于偏置开关单元(68)的开关单元(68,70)通信的偏置电压信号,并提供在地面上大约一个二极管压降与负电压之间摆动的输出,以偏置 开关电路元件(68和70)用于减少损耗。 电平移位电路(10)响应外部提供的控制信号(58)。 开关单元(68,70)形成为至少互连的半导体开关单元(68,70)的第一组和第二组(76,78)的分组,每组具有栅极的组(76,78) 与电平移位电路输出(60,62)连接的至少两个互连的开关单元(68,70)。 开关单元(68,70)和电平移位电路(10)均形成在MMIC结构(C)上。