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1. 发明授权

US08984209B2 Semiconductor device and method of controlling non-volatile memory device 有权
标题翻译：控制非易失性存储器件的半导体器件和方法
公开(公告)号：US08984209B2
公开(公告)日：2015-03-17
申请号：US13443883
申请日：2012-04-10
申请人： Seiji Miura
发明人： Seiji Miura
IPC分类号： G06F12/00 , G06F12/02 , G11C13/00
CPC分类号： G06F12/0246 , G06F2212/7201 , G06F2212/7202 , G06F2212/7209 , G06F2212/7211 , G11C13/0004
摘要： A control circuit of a semiconductor device (memory module) realizes long life and others by a mechanism that suppresses and smoothes variations in use of a memory by equalizing the sizes of data write and data erase with respect to a data write request and sequentially allocating and using addresses of the memory in data write to an overwritable non-volatile memory device without carrying out an overwriting operation even in the case of an overwrite request. The control circuit realizes data write by a set of two types of operations of (a) an operation of erasing data of a first address or an operation of setting a flag value to an invalid state and (b) an operation of writing data to a second address different from the first address or an operation of setting a flag value to a valid state.
摘要翻译：半导体器件（存储器模块）的控制电路通过均衡相对于数据写入请求的数据写入和数据擦除的大小来抑制和平滑存储器的使用变化的机制来实现长寿命等，即使在重写请求的情况下，也可以使用写入可重写非易失性存储器件的数据中的存储器的地址，而不执行重写操作。控制电路通过以下两种操作来实现数据写入：（a）擦除第一地址的数据或将标志值设置为无效状态的操作，以及（b）将数据写入到第二地址不同于第一地址或将标志值设置为有效状态的操作。

2. 发明授权

US08886893B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08886893B2
公开(公告)日：2014-11-11
申请号：US12597097
申请日：2008-04-25
申请人： Seiji Miura , Yoshinori Haraguchi , Kazuhiko Abe , Shoji Kaneko
发明人： Seiji Miura , Yoshinori Haraguchi , Kazuhiko Abe , Shoji Kaneko
IPC分类号： G06F12/00 , G11C7/00 , G06F13/42
CPC分类号： G11C14/00 , G06F13/4243 , G11C16/30
摘要： The present invention has an object of providing a high-speed, low-cost, and user-friendly information processing system that can ensure scalability of memory capacity. The information processing system is configured to include an information processing device, a volatile memory, and a nonvolatile memory. By serially connecting the information processing device, the volatile memory, and the nonvolatile memory and reducing the number of connection signals, processing speed is increased while maintaining the scalability of memory capacity. When transferring data of the nonvolatile memory to the volatile memory, error correction is performed, thereby improving reliability. The information processing system including the plurality of chips is configured as an information-processing system module in which the chips are alternately stacked and arranged, and wired by a ball grid array (BGA) or by bonding between the chips.
摘要翻译：本发明的目的是提供一种高速，低成本和用户友好的信息处理系统，其可以确保存储器容量的可扩展性。信息处理系统被配置为包括信息处理设备，易失性存储器和非易失性存储器。通过串行连接信息处理装置，易失性存储器和非易失性存储器并减少连接信号的数量，提高处理速度，同时保持存储容量的可扩展性。当将非易失性存储器的数据传送到易失性存储器时，执行错误校正，从而提高可靠性。包括多个芯片的信息处理系统被配置为信息处理系统模块，其中芯片被交替堆叠和布置，并且由球栅阵列（BGA）或芯片之间的接合进行布线。

3. 发明授权

US08874810B2 System and method for read data buffering wherein analyzing policy determines whether to decrement or increment the count of internal or external buffers 有权
标题翻译：用于读取数据缓冲的系统和方法，其中分析策略确定是递减还是增加内部或外部缓冲器的计数
公开(公告)号：US08874810B2
公开(公告)日：2014-10-28
申请号：US12276143
申请日：2008-11-21
申请人： Roger Dwain Isaac , Seiji Miura
发明人： Roger Dwain Isaac , Seiji Miura
IPC分类号： G06F13/16
CPC分类号： G06F13/1673 , G06F13/1684
摘要： Efficient and convenient storage systems and methods are presented. In one embodiment a storage system includes a plurality of storage nodes and a master controller. The storage nodes store information. The storage node includes an upstream communication buffer which is locally controlled at the storage node to facilitate resolution of conflicts in upstream communications. The master controller controlls the flow of traffic to the node based upon constraints of the upstream communication buffer. In one embodiment, communication between the master controller and the node has a determined maximum latency. The storage node can be coupled to the master controller in accordance with a chain memory configuration.
摘要翻译：介绍了高效便捷的存储系统和方法。在一个实施例中，存储系统包括多个存储节点和主控制器。存储节点存储信息。存储节点包括在存储节点处本地控制的上行通信缓冲器，以便于解决上游通信中的冲突。主控制器基于上游通信缓冲器的约束来控制到节点的流量流。在一个实施例中，主控制器和节点之间的通信具有确定的最大等待时间。存储节点可以根据链式存储器配置耦合到主控制器。

4. 发明授权

US08773919B2 Semiconductor device and data processing system 有权
标题翻译：半导体器件和数据处理系统
公开(公告)号：US08773919B2
公开(公告)日：2014-07-08
申请号：US13300139
申请日：2011-11-18
申请人： Seiji Miura , Satoru Hanzawa
发明人： Seiji Miura , Satoru Hanzawa
IPC分类号： G11C7/00 , G11C13/00 , G11C8/08 , G11C8/18
CPC分类号： G11C13/0007 , G11C8/08 , G11C8/18 , G11C13/0004 , G11C13/004 , G11C13/0061 , G11C13/0069 , G11C13/0097 , G11C2013/0088 , G11C2211/5623
摘要： In a phase change memory, when M bit (8 bits=1 byte) data is written, erase operation and program operation are performed in units of n bit (M>n) data. Further, when M bit data is written, program operation is performed in units of the n bit (M>n) data. Further, when M bit data is read from the memory cell, read operation is performed in units of the n bit (M>n) data. For example, when the data is written into to the phase change memory, the data is not overwritten but program is performed after once erasing the target memory cell. The data size for erasure and the data size for program are made equal. Erase and program operation are performed only for the demanded data size.
摘要翻译：在相变存储器中，当写入M位（8位= 1字节）数据时，以n位（M> n）数据为单位执行擦除操作和编程操作。此外，当写入M位数据时，以n位（M> n）数据为单位执行编程操作。此外，当从存储单元读取M位数据时，以n位（M> n）数据为单位执行读操作。例如，当数据被写入相变存储器时，数据不被重写，而是在擦除目标存储单元之后执行程序。擦除的数据大小和程序的数据大小相等。擦除和编程操作仅针对所需的数据大小执行。

5. 发明授权

US08711650B2 Semiconductor device including multi-chip 失效
标题翻译：半导体器件包括多芯片
公开(公告)号：US08711650B2
公开(公告)日：2014-04-29
申请号：US13533003
申请日：2012-06-26
申请人： Kazushige Ayukawa , Seiji Miura , Yoshikazu Saitou
发明人： Kazushige Ayukawa , Seiji Miura , Yoshikazu Saitou
IPC分类号： G11C8/00
CPC分类号： G11C11/005 , G11C5/04 , G11C5/06 , G11C5/063 , G11C5/143 , G11C8/12 , G11C11/406 , G11C11/40607 , G11C11/40618 , G11C11/4076 , H01L2224/06145 , H01L2224/06156 , H01L2224/32145 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2924/01039 , H01L2924/01055 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/15311 , H01L2924/19041 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： In order to implement a memory having a large storage capacity and a reduced data retention current, a non-volatile memory, an SRAM, a DRAM, and a control circuit are modularized into one package. The control circuit conducts assignment of addresses to the SRAM and DRAM, and stores data that must be retained over a long period of time in the SRAM. In the DRAM, a plurality of banks are divided into two sets, and mapped to the same address space, and sets are refreshed alternately. A plurality of chips of them are stacked and disposed, and wired by using the BGA and chip-to-chip bonding.
摘要翻译：为了实现具有大的存储容量和减少的数据保持电流的存储器，非易失性存储器，SRAM，DRAM和控制电路被模块化成一个封装。控制电路对SRAM和DRAM进行地址分配，并将要长时间保留的数据存储在SRAM中。在DRAM中，多个存储体被分成两组，映射到相同的地址空间，并且交替地刷新集合。它们的多个芯片被堆叠和布置，并且通过使用BGA和芯片到芯片的接合进行布线。

6. 发明授权

US08711637B2 Semiconductor device and data processing system 有权
公开(公告)号：US08711637B2
公开(公告)日：2014-04-29
申请号：US13300139
申请日：2011-11-18
申请人： Seiji Miura , Satoru Hanzawa
发明人： Seiji Miura , Satoru Hanzawa
IPC分类号： G11C7/00
摘要： In a phase change memory, when M bit (8 bits=1 byte) data is written, erase operation and program operation are performed in units of n bit (M>n) data. Further, when M bit data is written, program operation is performed in units of the n bit (M>n) data. Further, when M bit data is read from the memory cell, read operation is performed in units of the n bit (M>n) data. For example, when the data is written into to the phase change memory, the data is not overwritten but program is performed after once erasing the target memory cell. The data size for erasure and the data size for program are made equal. Erase and program operation are performed only for the demanded data size.

7. 发明授权

US08271740B2 Multiport memory and information processing system 有权
标题翻译：多端口内存和信息处理系统
公开(公告)号：US08271740B2
公开(公告)日：2012-09-18
申请号：US12411974
申请日：2009-03-26
申请人： Seiji Miura , Yoshinori Matsui , Kazuhiko Abe , Shoji Kaneko
发明人： Seiji Miura , Yoshinori Matsui , Kazuhiko Abe , Shoji Kaneko
IPC分类号： G06F12/00
CPC分类号： G11C7/1075 , G06F13/1663
摘要： In an information processing system, a plurality of information processing devices CHIP0 and CHIP1 are connected to multiport memory MPMEM0 that has a plurality of ports, and memory areas in multiport memory MPMEM0 can be altered to memory areas occupied by particular ports and memory areas shared by a plurality of ports. At such times, immediately after the occurrence of a request from a port, the status of this request may be supplied from other ports.
摘要翻译：在信息处理系统中，多个信息处理装置CHIP0和CHIP1连接到具有多个端口的多端口存储器MPMEM0，并且多端口存储器MPMEM0中的存储区域可以被改变为由特定端口和存储区域所占用的存储区域多个端口。在这样的时刻，在从端口发出请求之后，可以从其他端口提供该请求的状态。

8. 发明申请

US20120030403A1 Memory Module, Cache System and Address Conversion Method 审中-公开
标题翻译：内存模块，缓存系统和地址转换方法
公开(公告)号：US20120030403A1
公开(公告)日：2012-02-02
申请号：US13189660
申请日：2011-07-25
申请人： Seiji MIURA
发明人： Seiji MIURA
IPC分类号： G06F12/00 , G06F12/08
CPC分类号： G06F12/0246 , G06F11/1068 , G06F12/0862 , G06F12/0888 , G06F12/0893 , G06F2212/2022 , G11C5/02 , G11C7/1006 , G11C2207/2245 , H01L2224/16225 , H01L2224/32145 , H01L2224/48091 , H01L2224/48137 , H01L2224/48145 , H01L2224/48227 , H01L2224/49175 , H01L2224/73253 , H01L2224/73265 , H01L2924/15311 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： A memory system including a non-volatile memory, a cache memory, a control circuit, and a data processing device is configured. The high speed can be achieved by transferring data in the non-volatile memory to the cache memory to retain the same therein. When the data in the non-volatile memory is transferred to the cache memory, error correction is performed so as to improve the reliability. Since the cache memory and the non-volatile memory can be accessed from the data processing device independently, improvement in usability can be achieved. The memory system including the plurality of chips is configured as a memory system module where respective chips are arranged in a stacked manner and wired by a ball grid array (BGA) and wire bonding between chips.
摘要翻译：配置包括非易失性存储器，高速缓冲存储器，控制电路和数据处理装置的存储器系统。可以通过将非易失性存储器中的数据传送到高速缓冲存储器来保持高速度来实现高速度。当非易失性存储器中的数据被传送到高速缓冲存储器时，执行错误校正以提高可靠性。由于可以独立于数据处理装置访问高速缓冲存储器和非易失性存储器，所以可以实现可用性的提高。包括多个芯片的存储器系统被配置为存储器系统模块，其中各个芯片以堆叠的方式布置并且由球栅阵列（BGA）布线并且在芯片之间引线接合。

9. 发明申请

US20120004306A1 EXTERNAL PREPARATION CONTAINING ANALGESIC/ANTI-INFLAMMATORY AGENT 审中-公开
标题翻译：含有毒性/抗炎药的外用制剂
公开(公告)号：US20120004306A1
公开(公告)日：2012-01-05
申请号：US13256057
申请日：2010-03-11
申请人： Seiji Miura , Tsutomu Awamura , Yuhiro Yamazaki , Hironari Fujii
发明人： Seiji Miura , Tsutomu Awamura , Yuhiro Yamazaki , Hironari Fujii
IPC分类号： A61K31/196 , A61P29/00 , A61P25/04
CPC分类号： A61K31/196 , A61K9/7053 , A61K31/05 , A61K45/06 , A61K2300/00
摘要： An external preparation containing the following components (A), (B), and (C): (A) a non-steroidal analgesic/anti-inflammatory agent, (B) a polyhydric alcohol, and (C) a polyoxyalkylene alkyl ether and/or a polyoxyalkylene alkenyl ether. The external preparation of the present invention has improved the drug efficacy of a non-steroidal analgesic/anti-inflammatory agent, and can be effective at a low concentration. The external preparation of the present invention also has excellent appearance.
摘要翻译：含有以下组分（A），（B）和（C）的外用制剂：（A）非甾体镇痛/抗炎剂，（B）多元醇和（C）聚氧化烯烷基醚和 /或聚氧化烯链烯基醚。本发明的外用制剂改善了非甾体止痛/消炎药的药效，可以低浓度有效。本发明的外用制剂也具有优异的外观。

10. 发明授权

US07991954B2 Memory module, memory system, and information device 有权
标题翻译：内存模块，内存系统和信息设备
公开(公告)号：US07991954B2
公开(公告)日：2011-08-02
申请号：US12579223
申请日：2009-10-14
申请人： Seiji Miura , Kazushige Ayukawa
发明人： Seiji Miura , Kazushige Ayukawa
IPC分类号： G06F12/00
CPC分类号： G11C11/005 , G06F12/0638 , G06F2212/2022 , G11C7/20 , G11C11/4072 , H01L2224/48091 , H01L2224/48137 , H01L2924/00014
摘要： A memory system including ROM and RAM in which reading and writing are enabled. A memory system includes a non-volatile memory (FLASH), DRAM, a control circuit, and an information processing device. Data in FLASH is transferred to SRAM or DRAM in advance. Data transfer between the non-volatile memory and the DRAM can be performed in the background. The memory system including these plural chips is configured as a memory system module in which each chip is mutually laminated and each chip is wired via a ball grid array (BGA) and bonding wire between the chips. Data in FLASH can be read at the similar speed to that of DRAM by securing a region in which the data in FLASH can be copied in DRAM and transferring the data to DRAM in advance immediately after power is turned on or by a load instruction.
摘要翻译：包括ROM和RAM的存储器系统，其中启用读和写。存储器系统包括非易失性存储器（FLASH），DRAM，控制电路和信息处理设备。预先将FLASH中的数据传送到SRAM或DRAM。在非易失性存储器和DRAM之间的数据传输可以在后台执行。包括这些多个芯片的存储器系统被配置为存储器系统模块，其中每个芯片相互层叠，并且每个芯片经由球栅阵列（BGA）和芯片之间的接合线布线。 FLASH中的数据可以通过保护FLASH中的数据可以在DRAM中复制的区域以及在接通电源或通过加载指令之后将数据传送到DRAM中，以与DRAM类似的速度读取速度。

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