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1. 发明申请

US20090162789A1 Method for Transferring a Predetermined Pattern Reducing Proximity Effects 有权
标题翻译：传递预定图案减少接近效应的方法
公开(公告)号：US20090162789A1
公开(公告)日：2009-06-25
申请号：US12226973
申请日：2006-05-05
申请人： Laurent Pain , Serdar Manakli , Georges Bervin
发明人： Laurent Pain , Serdar Manakli , Georges Bervin
IPC分类号： G03C5/00
CPC分类号： G03F7/70433 , B82Y10/00 , B82Y40/00 , G03F7/70383 , H01J37/3174 , Y10S430/143
摘要： A method for transferring a predetermined pattern onto a flat support performed by direct writing by means of a particle beam comprises at least: deposition of a photoresist layer on a free surface of the support, application of the beam on exposed areas of the photoresist layer, performing correction by modulation of exposure doses received by each exposed area, developing of the photoresist layer so as to form said pattern. Correction further comprises determination of a substitution pattern (11) comprising at least one subresolution feature and use of the substitution pattern (11) for determining the areas to be exposed when the electron beam is applied. In addition, modulation takes account of the density of the substitution pattern (11) near to each exposed area.
摘要翻译：通过用粒子束进行直接写入而将预定图案转移到平坦支撑件上的方法至少包括：在支撑体的自由表面上沉积光致抗蚀剂层，在光致抗蚀剂层的曝光区域上施加光束，通过调制由每个曝光区域接收的曝光剂量来校正光致抗蚀剂层的显影以形成所述图案。校正还包括确定包含至少一个子分解特征的取代图案（11），并且使用取代图案（11）来确定当施加电子束时要暴露的区域。此外，调制考虑了靠近每个暴露区域的取代图案（11）的密度。

2. 发明申请

US20090093079A1 METHOD OF PRODUCING AN ASYMMETRIC ARCHITECTURE SEMI-CONDUCTOR DEVICE 有权
标题翻译：生产不对称结构半导体器件的方法
公开(公告)号：US20090093079A1
公开(公告)日：2009-04-09
申请号：US12244051
申请日：2008-10-02
申请人： Serdar Manakli , Jessy Bustos , Philippe Coronel , Laurent Pain
发明人： Serdar Manakli , Jessy Bustos , Philippe Coronel , Laurent Pain
IPC分类号： H01L21/3205 , H01L21/02
CPC分类号： H01L21/263 , H01L21/0277 , H01L29/42392 , H01L29/78648 , H01L29/78696
摘要： A method is for producing an asymmetric architecture semi-conductor device. The device includes a substrate, and in stacked relation, a first photosensitive layer, a non-photosensitive layer, and a second photosensitive layer. The method includes a first step of exposing a first zone in each of the photosensitive layers by a first beam of electrons traversing the non-photosensitive layer. A second step includes exposing at least one second zone of one of the two photosensitive layers by a second beam of electrons or photons or ions, thereby producing a widening of one of the first zones compared to the other first zone such that the second zone is in part superimposed on one of the first zones.
摘要翻译：一种用于制造非对称架构半导体器件的方法。该装置包括基板，并且以堆叠关系，包括第一感光层，非感光层和第二感光层。该方法包括通过穿过非感光层的第一电子束暴露每个感光层中的第一区的第一步骤。第二步骤包括通过第二电子束或光子或离子暴露两个感光层中的一个的至少一个第二区域，从而与其它第一区域相比产生第一区域之一的加宽，使得第二区域部分地叠加在第一区域之一上。

3. 发明授权

US09607808B2 Method of electron-beam lithography with correction of corner roundings 有权
公开(公告)号：US09607808B2
公开(公告)日：2017-03-28
申请号：US13641120
申请日：2011-04-13
申请人： Serdar Manakli
发明人： Serdar Manakli
IPC分类号： G03F7/00 , H01J37/31 , B82Y10/00 , B82Y40/00 , G03F1/78 , G03F7/20 , H01J37/317
CPC分类号： H01J37/31 , B82Y10/00 , B82Y40/00 , G03F1/78 , G03F7/2061 , G03F7/2063 , H01J37/3174
摘要： A method of electron-beam lithography by direct writing solves the reliability of design of etched components through rounding of the corners of contiguous patterns, notably in patterns to be etched of critical dimension of the order of 35 nm. The method determines critical patterns, and correction patterns by subtracting patterns of corrections of dimensions and of locations as a function of rounding of external or internal corners to be corrected and etching of the corrected design. The corrections may be by a correction model taking account of the parameters of the critical patterns. A correction of the proximity effects specific to these methods is also performed, by resizing of edges of blocks to be etched in combination optimized by the energy latitude with a modulation of the radiated doses. A rescaling and negation functions and eRIF functions may be used to optimize the parameters and the realization of the extrusion.

4. 发明申请

US20130201468A1 LITHOGRAPHY METHOD WITH COMBINED OPTIMIZATION OF RADIATED ENERGY AND DESIGN GEOMETRY 有权
标题翻译：利用放射能量和设计几何的组合优化算法
公开(公告)号：US20130201468A1
公开(公告)日：2013-08-08
申请号：US13641128
申请日：2011-04-13
申请人： Serdar Manakli
发明人： Serdar Manakli
IPC分类号： G03F7/20
CPC分类号： G03F7/70558 , B82Y10/00 , B82Y40/00 , H01J37/3174
摘要： A lithography method for a pattern to be etched on a support, notably to a method using electron radiation with direct writing on the support. Hitherto, the methods for correcting the proximity effects for dense network geometries (line spacings of 10 to 30 nm) have been reflected in a significant increase in the radiated doses and therefore in the exposure time. According to the invention, the patterns to be etched are modified as a function of the energy latitude of the process, which allows a reduction of the radiated doses.
摘要翻译：用于在载体上蚀刻图案的光刻方法，特别是涉及使用直接写在载体上的电子辐射的方法。迄今为止，用于校正密集网络几何形状（10至30nm的线间距）的邻近效应的方法已经反映在辐射剂量的显着增加中，因此反映在曝光时间内。根据本发明，要蚀刻的图案被修改为过程的能量纬度的函数，这允许减少辐射剂量。

5. 发明授权

US07955914B2 Method of producing an asymmetric architecture semi-conductor device 有权
标题翻译：制造非对称架构半导体器件的方法
公开(公告)号：US07955914B2
公开(公告)日：2011-06-07
申请号：US12244051
申请日：2008-10-02
申请人： Serdar Manakli , Jessy Bustos , Philippe Coronel , Laurent Pain
发明人： Serdar Manakli , Jessy Bustos , Philippe Coronel , Laurent Pain
IPC分类号： H01L21/00 , H01L21/336
CPC分类号： H01L21/263 , H01L21/0277 , H01L29/42392 , H01L29/78648 , H01L29/78696
摘要： A method is for producing an asymmetric architecture semiconductor device. The device includes a substrate, and in stacked relation, a first photosensitive layer, a non-photosensitive layer, and a second photosensitive layer. The method includes a first step of exposing a first zone in each of the photosensitive layers by a first beam of electrons traversing the non-photosensitive layer. A second step includes exposing at least one second zone of one of the two photosensitive layers by a second beam of electrons or photons or ions, thereby producing a widening of one of the first zones compared to the other first zone such that the second zone is in part superimposed on one of the first zones.
摘要翻译：一种用于制造非对称架构半导体器件的方法。该装置包括基板，并且以堆叠关系，包括第一感光层，非感光层和第二感光层。该方法包括通过穿过非感光层的第一电子束暴露每个感光层中的第一区的第一步骤。第二步骤包括通过第二电子束或光子或离子暴露两个感光层中的一个的至少一个第二区域，从而与其它第一区域相比产生第一区域之一的加宽，使得第二区域部分地叠加在第一区域之一上。

6. 发明授权

US09235132B2 Large-mesh cell-projection electron-beam lithography method 有权
标题翻译：大网格细胞投影电子束光刻法
公开(公告)号：US09235132B2
公开(公告)日：2016-01-12
申请号：US13641125
申请日：2011-04-13
申请人： Serdar Manakli
发明人： Serdar Manakli
IPC分类号： G03B27/32 , G03B27/54 , G03C5/00 , G21G5/00 , H01J3/14 , G03F7/20 , B82Y10/00 , B82Y40/00 , H01J37/317
CPC分类号： G03F7/70091 , B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31764 , H01J2237/31776 , Y10S430/143
摘要： A lithography method based on the projection of cells, notably direct-write electron-beam lithography. One of the main limitations of the methods of this type in the prior art is the writing time. To overcome this limitation, according to the method of the invention, the size of the cells is increased to the maximum aperture of the lithography device. Advantageously, this size increase is obtained by modifying the size of the apertures of the projection stencil level closest to the substrate to be etched. Advantageously, a strip is added to the outside of the block to be etched onto which is radiated a dose calculated to optimize the process energy latitude. Advantageously, this strip is spaced apart from the edge of the block to be etched. Advantageously, the projected cells are not adjoining.
摘要翻译：基于电池投影的光刻方法，特别是直写式电子束光刻技术。在现有技术中这种类型的方法的主要限制之一是写入时间。为了克服这个限制，根据本发明的方法，电池的尺寸增加到光刻装置的最大孔径。有利地，通过改变最接近待蚀刻的基底的突起模板水平面的尺寸来获得这种尺寸增加。有利的是，将带材加到要蚀刻的块的外部，辐射剂量被计算以优化过程能量纬度。有利地，该条带与被蚀刻块的边缘间隔开。有利地，投影单元不相邻。

7. 发明授权

US08713499B2 Electron-beam lithography method with correction of line ends by insertion of contrast patterns 有权
标题翻译：电子束光刻法，通过插入对比度图案校正线端
公开(公告)号：US08713499B2
公开(公告)日：2014-04-29
申请号：US13641119
申请日：2011-04-13
申请人： Serdar Manakli
发明人： Serdar Manakli
IPC分类号： G06F17/50
CPC分类号： G06F17/50 , B82Y10/00 , B82Y40/00 , G03F1/78 , H01J37/3174
摘要： A method of electron-beam lithography is provided, notably for technologies of critical dimension of the order of 22 nm. In such methods applied notably to networks of lines, the methods of the prior art do not offer precise and efficient correction of the shortenings of line ends. The method provided solves this problem by carrying out the insertion of contrast intensification structures of types which are optimized for the structure of the lines to be corrected. The method allows the semi-automatic or automatic calculation of the dimensions and locations of said structures. Advantageously, these calculations may be modeled to produce a target design, derived from libraries of components. They may be supplemented with a joint optimization of the size of the etchings and of the radiated doses, as a function of the process energy latitude.
摘要翻译：提供电子束光刻的方法，特别是对于22nm的临界尺寸的技术。在这种特别适用于线路网络的方法中，现有技术的方法不能精确而有效地校正线端的缩短。所提供的方法通过对针对要校正的线的结构进行优化的类型的对比增强结构的插入来解决这个问题。该方法允许半自动或自动计算所述结构的尺寸和位置。有利地，这些计算可以被建模以产生从组件库导出的目标设计。可以根据工艺能量纬度来补充蚀刻和辐射剂量的联合优化。

8. 发明申请

US20130201467A1 LARGE-MESH CELL-PROJECTION ELECTRON-BEAM LITHOGRAPHY METHOD 有权
标题翻译：大型网孔投影电子束光刻方法
公开(公告)号：US20130201467A1
公开(公告)日：2013-08-08
申请号：US13641125
申请日：2011-04-13
申请人： Serdar Manakli
发明人： Serdar Manakli
IPC分类号： G03F7/20
CPC分类号： G03F7/70091 , B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31764 , H01J2237/31776 , Y10S430/143
摘要： A lithography method based on the projection of cells, notably direct-write electron-beam lithography. One of the main limitations of the methods of this type in the prior art is the writing time. To overcome this limitation, according to the method of the invention, the size of the cells is increased to the maximum aperture of the lithography device. Advantageously, this size increase is obtained by modifying the size of the apertures of the projection stencil level closest to the substrate to be etched. Advantageously, a strip is added to the outside of the block to be etched onto which is radiated a dose calculated to optimize the process energy latitude. Advantageously, this strip is spaced apart from the edge of the block to be etched. Advantageously, the projected cells are not adjoining
摘要翻译：基于电池投影的光刻方法，特别是直写式电子束光刻技术。在现有技术中这种类型的方法的主要限制之一是写入时间。为了克服这个限制，根据本发明的方法，电池的尺寸增加到光刻装置的最大孔径。有利地，通过改变最接近待蚀刻的基底的突起模板水平面的尺寸来获得这种尺寸增加。有利的是，将带材加到要蚀刻的块的外部，辐射剂量被计算以优化过程能量纬度。有利地，该条带与被蚀刻块的边缘间隔开。有利地，投影单元不相邻

9. 发明申请

US20130198707A1 "ELECTRON-BEAM LITHOGRAPHY METHOD WITH CORRECTION OF LINE ENDS BY INSERTION OF CONTRAST PATTERNS" 有权
标题翻译： “通过对比度图案插入线端修正的电子光栅方法”
公开(公告)号：US20130198707A1
公开(公告)日：2013-08-01
申请号：US13641119
申请日：2011-04-13
申请人： Serdar Manakli
发明人： Serdar Manakli
IPC分类号： G06F17/50
CPC分类号： G06F17/50 , B82Y10/00 , B82Y40/00 , G03F1/78 , H01J37/3174
摘要： A method of electron-beam lithography is provided, notably for technologies of critical dimension of the order of 22 nm. In such methods applied notably to networks of lines, the methods of the prior art do not offer precise and efficient correction of the shortenings of line ends. The method provided solves this problem by carrying out the insertion of contrast intensification structures of types which are optimized for the structure of the lines to be corrected. The method allows the semi-automatic or automatic calculation of the dimensions and locations of said structures. Advantageously, these calculations may be modeled to produce a target design, derived from libraries of components. They may be supplemented with a joint optimization of the size of the etchings and of the radiated doses, as a function of the process energy latitude.
摘要翻译：提供电子束光刻的方法，特别是对于22nm的临界尺寸的技术。在这种特别适用于线路网络的方法中，现有技术的方法不能精确而有效地校正线端的缩短。所提供的方法通过对针对要校正的线的结构进行优化的类型的对比增强结构的插入来解决这个问题。该方法允许半自动或自动计算所述结构的尺寸和位置。有利地，这些计算可以被建模以产生从组件库导出的目标设计。可以根据工艺能量纬度来补充蚀刻和辐射剂量的联合优化。

10. 发明授权

US09250540B2 Lithography method with combined optimization of radiated energy and design geometry 有权
标题翻译：光刻方法，辐射能和设计几何结合优化
公开(公告)号：US09250540B2
公开(公告)日：2016-02-02
申请号：US13641128
申请日：2011-04-13
申请人： Serdar Manakli
发明人： Serdar Manakli
IPC分类号： A61N5/00 , G03B27/32 , G03B27/54 , G03F7/20 , B82Y10/00 , B82Y40/00 , H01J37/317
CPC分类号： G03F7/70558 , B82Y10/00 , B82Y40/00 , H01J37/3174
摘要： A lithography method for a pattern to be etched on a support, notably to a method using electron radiation with direct writing on the support. Hitherto, the methods for correcting the proximity effects for dense network geometries (line spacings of 10 to 30 nm) have been reflected in a significant increase in the radiated doses and therefore in the exposure time. According to the invention, the patterns to be etched are modified as a function of the energy latitude of the process, which allows a reduction of the radiated doses.
摘要翻译：用于在载体上蚀刻图案的光刻方法，特别是涉及使用直接写在载体上的电子辐射的方法。迄今为止，用于校正密集网络几何形状（10至30nm的线间距）的邻近效应的方法已经反映在辐射剂量的显着增加中，因此反映在曝光时间内。根据本发明，要蚀刻的图案被修改为过程的能量纬度的函数，这允许减少辐射剂量。

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