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1. 发明授权

US08455359B2 Semiconductor devices and methods of manufacturing the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US08455359B2
公开(公告)日：2013-06-04
申请号：US13289107
申请日：2011-11-04
申请人： Kook-Joo Kim , Jin-Ho Kim , Seung-Ki Chae , Pil-Kwon Jun , Sun-Hee Park , Gyoung-Eun Byun
发明人： Kook-Joo Kim , Jin-Ho Kim , Seung-Ki Chae , Pil-Kwon Jun , Sun-Hee Park , Gyoung-Eun Byun
IPC分类号： H01L21/44 , H01L21/4763
CPC分类号： H01L23/522 , H01L21/76829 , H01L2924/0002 , H01L2924/00
摘要： In a method of forming a conductive pattern structure of a semiconductor device, a first insulating interlayer is formed on a substrate. A first wiring is formed to pass through the first insulating interlayer. An etch stop layer and a second insulating interlayer are sequentially formed on the first insulating interlayer. A second wiring is formed to pass through the second insulating interlayer and the etch stop layer. A dummy pattern is formed to pass through the second insulating layer and the etch stop layer at the same time as forming the second wiring. The second wiring is electrically connected to the first wiring. The dummy pattern is electrically isolated from the second wiring.
摘要翻译：在形成半导体器件的导电图案结构的方法中，在基板上形成第一绝缘中间层。形成第一布线以通过第一绝缘中间层。在第一绝缘中间层上依次形成蚀刻停止层和第二绝缘中间层。形成第二布线以通过第二绝缘中间层和蚀刻停止层。在形成第二布线的同时，形成虚设图形以通过第二绝缘层和蚀刻停止层。第二布线电连接到第一布线。虚设图案与第二布线电隔离。

2. 发明授权

US08361274B2 Etching apparatus and etching method 有权
标题翻译：蚀刻装置和蚀刻方法
公开(公告)号：US08361274B2
公开(公告)日：2013-01-29
申请号：US11032651
申请日：2005-01-10
申请人： Kwang-Myung Lee , Ki-Young Yun , Il-Kyoung Kim , Sung-Wook Park , Seung-Ki Chae , No-Hyun Huh , Jae-Wook Kim , Jae-Hyuck An , Woo-Seok Kim , Myeong-Jin Kim , Kyoung-Ho Jang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
发明人： Kwang-Myung Lee , Ki-Young Yun , Il-Kyoung Kim , Sung-Wook Park , Seung-Ki Chae , No-Hyun Huh , Jae-Wook Kim , Jae-Hyuck An , Woo-Seok Kim , Myeong-Jin Kim , Kyoung-Ho Jang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
IPC分类号： H01L21/3065 , C23C16/455 , C23C16/00
CPC分类号： H01L21/6708 , H01J37/3244 , H01L21/3065
摘要： A vacuum processing apparatus is provided with: a vacuum processing tank; a first gas introduction section that is constructed such that a first processing gas in a radical state is introduced into the vacuum processing tank and is guided to a semiconductor wafer; and a second gas introduction section that is constructed such that a second processing gas that reacts with the first processing gas is introduced into the vacuum processing tank and is guided to the semiconductor wafer. The second gas introduction section has two shower nozzles provided at positions on either side of an introduction pipe provided for the first gas introduction section. According to this vacuum processing apparatus, high speed processing of a number of processing objects can be achieved. Moreover, the in-plane uniformity of the processing objects after processing can be ensured.
摘要翻译：真空处理装置具有：真空处理槽; 第一气体导入部，被构造成使得自由基状态的第一处理气体被引入到真空处理槽中并被引导到半导体晶片; 以及第二气体导入部，其被构造成使得与第一处理气体反应的第二处理气体被引入到真空处理槽中并被引导到半导体晶片。第二气体导入部具有设置在为第一气体导入部设置的导入管的任一侧的位置的两个喷淋喷嘴。根据该真空处理装置，可以实现多个处理对象的高速处理。此外，可以确保处理后的加工对象的面内均匀性。

3. 发明授权

US07985297B2 Method of cleaning a quartz part 失效
标题翻译：清洗石英部件的方法
公开(公告)号：US07985297B2
公开(公告)日：2011-07-26
申请号：US12500141
申请日：2009-07-09
申请人： Jung-Dae Park , Pil-Kwon Jun , Bo-Yong Lee , Tae-Hyo Choi , Da-Hee Lee , Seung-Ki Chae
发明人： Jung-Dae Park , Pil-Kwon Jun , Bo-Yong Lee , Tae-Hyo Choi , Da-Hee Lee , Seung-Ki Chae
IPC分类号： H01L21/02
CPC分类号： C11D11/0052 , C11D7/08 , C11D7/28 , C11D7/3209
摘要： A cleaning solution for a quartz part and a method for cleaning the quartz part are provided. The cleaning solution includes from about 5 to about 35 wt % of an ammonium compound, from about 7 to about 55 wt % of an acidic oxidizing agent, from about 5 to about 30 wt % of a fluorine compound and a remaining amount of water. Residual thin films and impurities on the surface of the quartz part may be removed while reducing the damage onto the quartz part.
摘要翻译：提供了石英部件的清洗液和清洗石英部件的方法。清洗溶液包含约5至约35重量％的铵化合物，约7至约55重量％的酸性氧化剂，约5至约30重量％的氟化合物和剩余量的水。可以除去石英部件表面上的残余薄膜和杂质，同时减少对石英部件的损伤。

4. 发明申请

US20110073801A1 Composition for etching silicon oxide and method of forming a contact hole using the same 审中-公开
公开(公告)号：US20110073801A1
公开(公告)日：2011-03-31
申请号：US12926615
申请日：2010-11-30
申请人： Dong-Won Hwang , Kook-Joo Kim , Jung-In LA , Pil-Kwon Jun , Seung-Ki Chae , Yang-Koo Lee
发明人： Dong-Won Hwang , Kook-Joo Kim , Jung-In LA , Pil-Kwon Jun , Seung-Ki Chae , Yang-Koo Lee
IPC分类号： C09K13/08
CPC分类号： C03C15/00 , C09K13/08 , H01L21/31133 , H01L21/76804 , H01L21/76897 , H01L27/10855
摘要： In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.

5. 发明申请

US20100009883A1 METHOD OF CLEANING A QUARTZ PART 失效
标题翻译：清洁QUARTZ零件的方法
公开(公告)号：US20100009883A1
公开(公告)日：2010-01-14
申请号：US12500141
申请日：2009-07-09
申请人： Jung-Dae PARK , Pil-Kwon Jun , Bo-Yong Lee , Tae-Hyo Choi , Da-Hee Lee , Seung-Ki Chae
发明人： Jung-Dae PARK , Pil-Kwon Jun , Bo-Yong Lee , Tae-Hyo Choi , Da-Hee Lee , Seung-Ki Chae
IPC分类号： C11D3/20
CPC分类号： C11D11/0052 , C11D7/08 , C11D7/28 , C11D7/3209
摘要： A cleaning solution for a quartz part and a method for cleaning the quartz part are provided. The cleaning solution includes from about 5 to about 35 wt % of an ammonium compound, from about 7 to about 55 wt % of an acidic oxidizing agent, from about 5 to about 30 wt % of a fluorine compound and a remaining amount of water. Residual thin films and impurities on the surface of the quartz part may be removed while reducing the damage onto the quartz part.
摘要翻译：提供了石英部件的清洗液和清洗石英部件的方法。清洗溶液包含约5至约35重量％的铵化合物，约7至约55重量％的酸性氧化剂，约5至约30重量％的氟化合物和剩余量的水。可以除去石英部件表面上的残余薄膜和杂质，同时减少对石英部件的损伤。

6. 发明申请

US20080000502A1 COMPOSITIONS FOR CLEANING A PROBE CARD AND METHODS OF CLEANING A PROBE CARD USING THE SAME 审中-公开
标题翻译：用于清洁探针卡的组合物和清洁探针卡的方法
公开(公告)号：US20080000502A1
公开(公告)日：2008-01-03
申请号：US11757179
申请日：2007-06-01
申请人： Jung-Dae PARK , Seung-Ki CHAE , Bo-Yong LEE , Myoung-Ok HAN , Jun-Hee LEE , Se-Yeon KIM
发明人： Jung-Dae PARK , Seung-Ki CHAE , Bo-Yong LEE , Myoung-Ok HAN , Jun-Hee LEE , Se-Yeon KIM
IPC分类号： B08B7/00 , C11D3/02 , C11D7/32 , C11D17/00
CPC分类号： C11D7/06 , C11D3/2044 , C11D7/261 , C11D11/0047 , G01R3/00
摘要： A composition for cleaning a probe card that may be a part of a semiconductor probe system and a method of cleaning the probe card using the composition is provided. In one embodiment, the composition includes a basic compound, an alcohol compound, and water. The composition for cleaning the probe card may prevent the probe card from being worn away or corroded, and may effectively remove impurities such as aluminum, aluminum oxide, or organic impurities from the probe card.
摘要翻译：提供了用于清洁可能是半导体探针系统的一部分的探针卡的组合物和使用该组合物清洁探针卡的方法。在一个实施方案中，组合物包括碱性化合物，醇化合物和水。用于清洁探针卡的组合物可以防止探针卡被磨损或腐蚀，并且可以有效地从探针卡中去除诸如铝，氧化铝或有机杂质的杂质。

7. 发明申请

US20070157414A1 APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES 失效
标题翻译：用于制造半导体器件的装置和方法
公开(公告)号：US20070157414A1
公开(公告)日：2007-07-12
申请号：US11566624
申请日：2006-12-04
申请人： Hun-Jung YI , Seung-Ki CHAE
发明人： Hun-Jung YI , Seung-Ki CHAE
IPC分类号： A47L5/38
CPC分类号： G03F7/2022 , G03F7/70925 , H01L21/67028 , H01L21/67225
摘要： Disclosed is an embodiment of an apparatus and method for manufacturing semiconductor devices. A photolithography process may be carried out after cleaning the backside of a wafer by means of an apparatus that includes an illumination module for conducting an optical illumination operation of photolithography to the front side of the wafer, and a cleaning module for conducting a cleaning operation on the wafer backside. Providing the capability of removing particles from the wafer backside and eliminating defocusing effects due to wafer chucking errors, these and other embodiments improve reliability of the photolithography process, as well as productivity and yields for the semiconductor devices.
摘要翻译：公开了用于制造半导体器件的装置和方法的实施例。可以通过包括用于将光刻的光学照明操作进行到晶片前侧进行照明的照明模块的装置清洁晶片的背面之后进行光刻工艺，以及用于进行清洁操作的清洁模块晶圆背面。提供从晶片背面去除颗粒的能力并消除由于晶片夹紧误差引起的散焦效应，这些和其它实施例提高了光刻工艺的可靠性，以及半导体器件的生产率和产量。

8. 发明授权

US07232552B2 Apparatus for decomposing perfluorinated compounds and system for processing perfluorinated compounds using the apparatus 有权
标题翻译：用于分解全氟化合物的装置和使用该装置处理全氟化合物的系统
公开(公告)号：US07232552B2
公开(公告)日：2007-06-19
申请号：US10423870
申请日：2003-04-28
申请人： Seung-ki Chae , Sang-gon Lee , In-ju Lee , Kyoung-hye Lee , Yong-hee Lee , Jin-ok Jung , Young-jo Shin
发明人： Seung-ki Chae , Sang-gon Lee , In-ju Lee , Kyoung-hye Lee , Yong-hee Lee , Jin-ok Jung , Young-jo Shin
IPC分类号： B01J19/08
CPC分类号： B01D53/32 , B01D2257/2066 , Y02C20/30
摘要： The apparatus for decomposing PFCs includes an external electrode unit which is coupled to a reference voltage and which defines a flow space for the flow of the PFCs, and an internal electrode unit which is located within the flow space of the external electrode unit so as to define a reaction space between the internal electrode unit and the external electrode unit. The apparatus is also equipped with a voltage supply unit which applies an alternating voltage to the internal electrode unit which is of sufficient voltage and frequency to generate an electron beam within the reaction space which is capable of decomposing the PFCs.
摘要翻译：用于分解PFC的装置包括外部电极单元，其耦合到参考电压并且限定用于PFC的流动的流动空间以及位于外部电极单元的流动空间内的内部电极单元，以便限定内部电极单元和外部电极单元之间的反应空间。该装置还配备有电压供应单元，该电压供应单元向具有足够电压和频率的内部电极单元施加交流电压，以在能够分解PFC的反应空间内产生电子束。

9. 发明申请

US20070000523A1 Cleaning composition and related methods 审中-公开
标题翻译：清洗组合物及相关方法
公开(公告)号：US20070000523A1
公开(公告)日：2007-01-04
申请号：US11454829
申请日：2006-06-19
申请人： Se-Yeon Kim , Pil-Kwon Jun , Jung-Dae Park , Myoung-Ok Han , Jea-Wook Kim , Seung-Ki Chae , Kook-Joo Kim , Jae-Seok Lee , Yong-Kyun Ko , Kwang-Shin Lim , Yang-Koo Lee
发明人： Se-Yeon Kim , Pil-Kwon Jun , Jung-Dae Park , Myoung-Ok Han , Jea-Wook Kim , Seung-Ki Chae , Kook-Joo Kim , Jae-Seok Lee , Yong-Kyun Ko , Kwang-Shin Lim , Yang-Koo Lee
IPC分类号： B08B3/04
CPC分类号： H01L21/02071 , C11D3/0073 , C11D7/10 , C11D7/3209 , C11D11/0023 , H01L27/10885
摘要： A cleaning composition is disclosed. The cleaning composition comprises about 80 to 99.8999 percent by weight of an ammonium fluoride aqueous solution, about 0.1 to 5 percent by weight of a buffering agent, and about 0.0001 to 15 percent by weight of a corrosion-inhibiting agent. A method of preparing the cleaning composition, a method of cleaning a substrate using the cleaning composition, and a method of manufacturing a semiconductor device using the cleaning composition are also disclosed.
摘要翻译：公开了一种清洁组合物。该清洗组合物含有约80-99.8999重量％的氟化铵水溶液，约0.1-5重量％的缓冲剂和约0.0001-15重量％的腐蚀抑制剂。还公开了一种制备清洁组合物的方法，使用清洁组合物清洁基材的方法，以及使用该清洁组合物制造半导体器件的方法。

10. 发明授权

US07112810B2 Ion implanting apparatus and ion implanting method using the same 有权
标题翻译：离子注入装置和使用其的离子注入方法
公开(公告)号：US07112810B2
公开(公告)日：2006-09-26
申请号：US10964735
申请日：2004-10-15
申请人： Gyeong-Su Keum , Seung-Ki Chae , Hyung-Sik Hong , Sang-Yeob Cha , Jae-Hyun Han , Tae-Sub Im , Hyun-Kyu Kang , Gil-Jung Yun , Doo-Guen Song
发明人： Gyeong-Su Keum , Seung-Ki Chae , Hyung-Sik Hong , Sang-Yeob Cha , Jae-Hyun Han , Tae-Sub Im , Hyun-Kyu Kang , Gil-Jung Yun , Doo-Guen Song
IPC分类号： H01J37/08 , H01J37/244
CPC分类号： H01J37/3171 , H01J37/304 , H01J2237/0044
摘要： In an ion implanting apparatus and an ion implanting method using the same, the ion implanting apparatus includes a disk chamber containing a rotatable disk, a wafer mounted on the rotatable disk, and a charge sensor for monitoring a charged state of the wafer, the charge sensor being fixed to the disk chamber to be adjacent to and facing a surface of the wafer. An output of the charge sensor may be used as feedback to control the charged state of the wafer.
摘要翻译：在离子注入装置和使用其的离子注入装置的离子注入方法中，离子注入装置包括容纳可旋转盘的盘室，安装在可旋转盘上的晶片和用于监测晶片充电状态的充电传感器，传感器固定到盘室以与晶片的表面相邻并且面对晶片的表面。电荷传感器的输出可以用作反馈以控制晶片的充电状态。

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