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1. 发明授权

US07497963B2 Etching method 有权
标题翻译：蚀刻方法
公开(公告)号：US07497963B2
公开(公告)日：2009-03-03
申请号：US11032393
申请日：2005-01-10
申请人： Kwang-Myung Lee , Ki-Young Yun , Seung-Ki Chae , No-Hyun Huh , Wan-Goo Hwang , Jung-Hyun Hwang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
发明人： Kwang-Myung Lee , Ki-Young Yun , Seung-Ki Chae , No-Hyun Huh , Wan-Goo Hwang , Jung-Hyun Hwang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
IPC分类号： B44C1/22
CPC分类号： H01L21/67063 , H01L21/31116
摘要： In this etching method, since an etching gas is introduced before introduction of free radicals into a processing chamber, the etching gas has been adsorbed on the surface of substrates when the free radicals are introduced. Accordingly, the free radicals react with the etching gas adsorbed on the surface of the substrates, and the reaction proceeds uniformly on the surface of the substrate. As a result, nonuniform etching does not occur on the surface of the substrate. Moreover, since the reaction between the etching gas and the free radicals occurs on the surface of the substrate, an intermediate product produced according to the reaction between the etching gas and the free radicals reacts with an etching object promptly. Therefore, the intermediate product is not exhausted from the processing chamber 12 excessively, and hence the etching efficiency is high. As a result, according to this etching method, not only the in-plane distribution of the etching amount becomes more uniform, but also the etching rate is increased more than in the conventional etching method.
摘要翻译：在该蚀刻方法中，由于在将自由基引入处理室之前引入蚀刻气体，当引入自由基时，蚀刻气体已被吸附在基板的表面上。因此，自由基与吸附在基板表面的蚀刻气体反应，反应在基板表面上均匀地进行。结果，在基板的表面上不会发生不均匀的蚀刻。此外，由于蚀刻气体和自由基之间的反应发生在基板的表面上，所以根据蚀刻气体和自由基之间的反应产生的中间产物迅速与蚀刻对象反应。因此，中间产品没有过度地从处理室12中排出，因此蚀刻效率高。结果，根据该蚀刻方法，不仅蚀刻量的面内分布变得更均匀，而且比常规蚀刻方法更多地提高蚀刻速率。

2. 发明申请

US20050153553A1 Etching method 有权
标题翻译：蚀刻方法
公开(公告)号：US20050153553A1
公开(公告)日：2005-07-14
申请号：US11032393
申请日：2005-01-10
申请人： Kwang-Myung Lee , Ki-Young Yun , Seung-Ki Chae , No-Hyun Huh , Wan-Goo Hwang , Jung-Hyun Hwang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
发明人： Kwang-Myung Lee , Ki-Young Yun , Seung-Ki Chae , No-Hyun Huh , Wan-Goo Hwang , Jung-Hyun Hwang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
IPC分类号： H01L21/3065 , H01L21/00 , H01L21/302 , H01L21/311 , H01L21/461 , H01L21/768 , H01L23/522
CPC分类号： H01L21/67063 , H01L21/31116
摘要： In this etching method, since an etching gas is introduced before introduction of free radicals into a processing chamber, the etching gas has been adsorbed on the surface of substrates when the free radicals are introduced. Accordingly, the free radicals react with the etching gas adsorbed on the surface of the substrates, and the reaction proceeds uniformly on the surface of the substrate. As a result, nonuniform etching does not occur on the surface of the substrate. Moreover, since the reaction between the etching gas and the free radicals occurs on the surface of the substrate, an intermediate product produced according to the reaction between the etching gas and the free radicals reacts with an etching object promptly. Therefore, the intermediate product is not exhausted from the processing chamber 12 excessively, and hence the etching efficiency is high. As a result, according to this etching method, not only the in-plane distribution of the etching amount becomes more uniform, but also the etching rate is increased more than in the conventional etching method.
摘要翻译：在该蚀刻方法中，由于在将自由基引入处理室之前引入蚀刻气体，当引入自由基时，蚀刻气体已被吸附在基板的表面上。因此，自由基与吸附在基板表面的蚀刻气体反应，反应在基板表面上均匀地进行。结果，在基板的表面上不会发生不均匀的蚀刻。此外，由于蚀刻气体和自由基之间的反应发生在基板的表面上，所以根据蚀刻气体和自由基之间的反应产生的中间产物迅速与蚀刻对象反应。因此，中间产品没有过度地从处理室12中排出，因此蚀刻效率高。结果，根据该蚀刻方法，不仅蚀刻量的面内分布变得更均匀，而且比常规蚀刻方法更多地提高蚀刻速率。

3. 发明申请

US20050087139A1 Antenna for use in producing plasma and plasma processing apparatus comprising the same 审中-公开
标题翻译：用于制造等离子体和等离子体处理装置的天线
公开(公告)号：US20050087139A1
公开(公告)日：2005-04-28
申请号：US10969928
申请日：2004-10-22
申请人： Woo-Seok Kim , Seung-Ki Chae , Do-Young Kam , Kwang-Myung Lee , Jai-Hyung Won , Jai-Kwang Shin , Jae-Joon Oh , Sang-Jean Jeon
发明人： Woo-Seok Kim , Seung-Ki Chae , Do-Young Kam , Kwang-Myung Lee , Jai-Hyung Won , Jai-Kwang Shin , Jae-Joon Oh , Sang-Jean Jeon
IPC分类号： H04B1/40 , C23C16/00 , H01J37/32
CPC分类号： H01J37/3222 , H01J37/32192
摘要： An antenna includes branches having substantially identical shapes. The branches are symmetrically disposed about a central point and extend along at least two concentric patterns whose geometric centers coincide with the central point. The branches each include pattern-forming portions that lie entirely within the concentric patterns, and at least one connecting portion extending between and connecting the pattern-forming portions. Input/output terminals for allowing a voltage to be impressed across the branches are provided at ends of each of the branches.
摘要翻译：天线包括具有基本相同形状的分支。分支对称地围绕中心点设置并且沿着其几何中心与中心点重合的至少两个同心图案延伸。这些分支各自包括完全位于同心图案内的图案形成部分，以及在图案形成部分之间延伸并连接图案形成部分的至少一个连接部分。在每个分支的端部设置用于允许在分支上施加电压的输入/输出端子。

4. 发明授权

US08083507B2 Vacuum pump having rotation body cleaning unit with spraying holes on an output surface of the cleaning body surrounding a shaft 失效
标题翻译：真空泵具有旋转体清洁单元，其具有围绕轴的清洁体的输出表面上的喷孔
公开(公告)号：US08083507B2
公开(公告)日：2011-12-27
申请号：US12050063
申请日：2008-03-17
申请人： Tea-Jin Park , Seung-Ki Chae , Kwang-Myung Lee , Sang-Gon Lee
发明人： Tea-Jin Park , Seung-Ki Chae , Kwang-Myung Lee , Sang-Gon Lee
IPC分类号： F01C1/30 , F03C2/00
CPC分类号： F04C18/126 , B08B3/02 , B08B5/02 , F04C23/001 , F04C29/0092 , F04C2220/10 , F04C2280/02
摘要： Provided is a vacuum pump having a rotation body cleaning unit. The vacuum pump includes a case provided with rotation guide holes at opposite end parts. The case includes a rotation body placed inside the case and including a rotation shaft having opposite ends rotatably supported by the rotation guide holes and a number of lobes provided in the rotation shaft at predetermined intervals. Further, a cleaning part is supported by the case and placed in a space between the lobes and cleans the rotation body.
摘要翻译：提供一种具有旋转体清洁单元的真空泵。真空泵包括在相对端部设置有旋转导向孔的壳体。壳体包括设置在壳体内部的旋转体，包括旋转轴，其具有由旋转引导孔可旋转地支撑的相对端和以预定间隔设置在旋转轴中的多个凸角。此外，清洁部件被壳体支撑并且放置在叶片之间的空间中并且清洁旋转体。

5. 发明申请

US20100206519A1 TEMPERATURE CONTROL SYSTEM FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT 审中-公开
标题翻译：半导体制造设备温度控制系统
公开(公告)号：US20100206519A1
公开(公告)日：2010-08-19
申请号：US12738553
申请日：2007-11-09
申请人： Bong-Hyun Cho , Chang-Woo Eun , Hyun-Seok Choi , Sang-Gon Lee , Kwang-Myung Lee , In-Joo Lee , Yong-Ho Choi , Seong-Kuk An , Choul-Oh Park
发明人： Bong-Hyun Cho , Chang-Woo Eun , Hyun-Seok Choi , Sang-Gon Lee , Kwang-Myung Lee , In-Joo Lee , Yong-Ho Choi , Seong-Kuk An , Choul-Oh Park
IPC分类号： F28D15/00
CPC分类号： H01L21/67248 , H01L21/67063
摘要： A temperature control system for semiconductor manufacturing equipment is disclosed, which can properly cool a process chamber adopted in the semiconductor manufacturing equipment such as a wafer etching device. The temperature control system for semiconductor manufacturing equipment includes a thermocline for cooling heat transfer fluid accommodated therein through a heat exchange with a heat exchanger and storing heat energy, a supply line for controlling the temperature of the heat transfer fluid in the thermocline through a heater and supplying the heat transfer fluid with a proper temperature to a process device, a recovery line for forwarding the heat transfer fluid having passed through the process device to the thermocline, and a bypass for forwarding a part of the heat transfer fluid passing through the recovery line to the supply line through the heater.
摘要翻译：公开了一种用于半导体制造设备的温度控制系统，其可以适当地冷却诸如晶片蚀刻装置的半导体制造设备中采用的处理室。用于半导体制造设备的温度控制系统包括用于通过与热交换器进行热交换而容纳在其中的传热流体冷却并存储热能的温跃层，用于通过加热器控制温跃层中的传热流体的温度的供应管线，将具有适当温度的传热流体供应到处理装置，用于将已经通过处理装置的传热流体转移到温跃层的回收管线，以及用于将通过回收管线的部分传热流体转运的旁路通过加热器到供应线。

6. 发明申请

US20050150861A1 Etching apparatus and etching method 有权
标题翻译：蚀刻装置和蚀刻方法
公开(公告)号：US20050150861A1
公开(公告)日：2005-07-14
申请号：US11032651
申请日：2005-01-10
申请人： Kwang-Myung Lee , Ki-Young Yun , Il-Kyoung Kim , Sung-Wook Park , Seung-Ki Chae , No-Hyun Huh , Jae-Wook Kim , Jae-Hyuck An , Woo-Seok Kim , Myeong-Jin Kim , Kyoung-Ho Jang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
发明人： Kwang-Myung Lee , Ki-Young Yun , Il-Kyoung Kim , Sung-Wook Park , Seung-Ki Chae , No-Hyun Huh , Jae-Wook Kim , Jae-Hyuck An , Woo-Seok Kim , Myeong-Jin Kim , Kyoung-Ho Jang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
IPC分类号： H01L21/00 , H01L21/3065 , C23F1/00 , B01D53/02 , B01D59/26
CPC分类号： H01L21/6708 , H01J37/3244 , H01L21/3065
摘要： A vacuum processing apparatus is provided with: a vacuum processing tank; a first gas introduction section that is constructed such that a first processing gas in a radical state is introduced into the vacuum processing tank and is guided to a semiconductor wafer; and a second gas introduction section that is constructed such that a second processing gas that reacts with the first processing gas is introduced into the vacuum processing tank and is guided to the semiconductor wafer. The second gas introduction section has two shower nozzles provided at positions on either side of an introduction pipe provided for the first gas introduction section. According to this vacuum processing apparatus, high speed processing of a number of processing objects can be achieved. Moreover, the in-plane uniformity of the processing objects after processing can be ensured.
摘要翻译：真空处理装置具有：真空处理槽; 第一气体导入部，被构造成使得自由基状态的第一处理气体被引入到真空处理槽中并被引导到半导体晶片; 以及第二气体导入部，其被构造成使得与第一处理气体反应的第二处理气体被引入到真空处理槽中并被引导到半导体晶片。第二气体导入部具有设置在为第一气体导入部设置的导入管的任一侧的位置的两个喷淋喷嘴。根据该真空处理装置，可以实现多个处理对象的高速处理。此外，可以确保处理后的加工对象的面内均匀性。

7. 发明申请

US20050130451A1 Method for processing a wafer and apparatus for performing the same 审中-公开
公开(公告)号：US20050130451A1
公开(公告)日：2005-06-16
申请号：US11050738
申请日：2005-02-07
申请人： Kwang-Myung Lee , Mikio Takagi , Jae-Hyuk An , Seung-Ki Chae , Jea-Wook Kim
发明人： Kwang-Myung Lee , Mikio Takagi , Jae-Hyuk An , Seung-Ki Chae , Jea-Wook Kim
IPC分类号： H01L21/3065 , H01L21/00 , H01L21/304 , H01L21/306 , H01L21/311 , H01L21/8242 , C23F1/00 , H01L21/26 , H01L21/324 , H01L21/42 , H01L21/477
CPC分类号： H01L21/02046 , H01L21/31116 , H01L21/67109
摘要： Disclosed are a method and an apparatus for processing a wafer in manufacturing a semiconductor device and a method and an apparatus for etching a material formed on the wafer, wherein first and second cooling parts adjust an ambient temperature near a plurality of wafers to a first temperature, the wafers are processed by introducing a reaction gas at the first temperature, then, a heating part rapidly raises the temperature of the atmosphere near the wafers from the first temperature to the second temperature to partially separate by-products produced during the processing, the second temperature is maintained to separate most of the by-products from the wafers, and the processing steps are implemented in-situ within the same space. Accordingly, a native oxide layer formed on several wafers can be etched and the reaction by-products can be removed in-situ in the same chamber so productivity is improved.

8. 发明申请

US20080226485A1 ROTATION BODY CLEANING UNIT AND VACUUM PUMP HAVING THE SAME 失效
标题翻译：旋转体清洁单元和具有相同功能的真空泵
公开(公告)号：US20080226485A1
公开(公告)日：2008-09-18
申请号：US12050063
申请日：2008-03-17
申请人： Tea-Jin PARK , Seung-Ki CHAE , Kwang-Myung LEE , Sang-Gon LEE
发明人： Tea-Jin PARK , Seung-Ki CHAE , Kwang-Myung LEE , Sang-Gon LEE
IPC分类号： F04C18/08 , F04C29/02 , B08B3/02
CPC分类号： F04C18/126 , B08B3/02 , B08B5/02 , F04C23/001 , F04C29/0092 , F04C2220/10 , F04C2280/02
摘要： Provided is a vacuum pump having a rotation body cleaning unit. The vacuum pump includes a case provided with rotation guide holes at opposite end parts. The case includes a rotation body placed inside the case and including a rotation shaft having opposite ends rotatably supported by the rotation guide holes and a number of lobes provided in the rotation shaft at predetermined intervals. Further, a cleaning part is supported by the case and placed in a space between the lobes and cleans the rotation body.
摘要翻译：提供一种具有旋转体清洁单元的真空泵。真空泵包括在相对端部设置有旋转导向孔的壳体。壳体包括设置在壳体内部的旋转体，包括旋转轴，其具有由旋转引导孔可旋转地支撑的相对端和以预定间隔设置在旋转轴中的多个凸角。此外，清洁部件被壳体支撑并且放置在叶片之间的空间中并且清洁旋转体。

9. 发明申请

US20070181062A1 SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS INCLUDING TEMPERATURE MEASURING UNIT 审中-公开
标题翻译：半导体器件制造设备，包括温度测量单元
公开(公告)号：US20070181062A1
公开(公告)日：2007-08-09
申请号：US11670596
申请日：2007-02-02
申请人： Il-Kyoung Kim , Kwang-Myung Lee , No-Hyun Huh , Wan-Goo Hwang , Ki-Young Yun
发明人： Il-Kyoung Kim , Kwang-Myung Lee , No-Hyun Huh , Wan-Goo Hwang , Ki-Young Yun
IPC分类号： F27D15/02 , C23C16/00
CPC分类号： F27B17/0025 , H01L21/67109 , H01L21/67248
摘要： A semiconductor device manufacturing apparatus comprises a chamber for processing a wafer, a wafer loading unit configured to load a wafer into and out of the chamber, a heating unit coupled with a chamber wall and a temperature measuring unit located between the chamber wall and the wafer loading unit and apart from the chamber wall.
摘要翻译：半导体器件制造设备包括用于处理晶片的腔室，被配置为将晶片加载到腔室中的晶片加载单元，与室壁耦合的加热单元和位于室壁和晶片之间的温度测量单元装载单元并且与室壁分开。

10. 发明授权

US06869500B2 Method for processing a wafer and apparatus for performing the same 失效
标题翻译：晶圆加工方法及其制造方法
公开(公告)号：US06869500B2
公开(公告)日：2005-03-22
申请号：US10236939
申请日：2002-09-09
申请人： Kwang-Myung Lee , Mikio Takagi , Jae-Hyuk An , Seung-Ki Chae , Jea-Wook Kim
发明人： Kwang-Myung Lee , Mikio Takagi , Jae-Hyuk An , Seung-Ki Chae , Jea-Wook Kim
IPC分类号： H01L21/3065 , H01L21/00 , H01L21/304 , H01L21/306 , H01L21/311 , H05H1/00 , C23C16/00
CPC分类号： H01L21/02046 , H01L21/31116 , H01L21/67109
摘要： Disclosed are a method and an apparatus for processing a wafer in manufacturing a semiconductor device and a method and an apparatus for etching a material formed on the wafer, wherein first and second cooling parts adjust an ambient temperature near a plurality of wafers to a first temperature, the wafers are processed by introducing a reaction gas at the first temperature, then, a heating part rapidly raises the temperature of the atmosphere near the wafers from the first temperature to the second temperature to partially separate by-products produced during the processing, the second temperature is maintained to separate most of the by-products from the wafers, and the processing steps are implemented in-situ within the same space. Accordingly, a native oxide layer formed on several wafers can be etched and the reaction by-products can be removed in-situ in the same chamber so productivity is improved.
摘要翻译：公开了一种用于在制造半导体器件中处理晶片的方法和装置，以及用于蚀刻形成在晶片上的材料的方法和设备，其中第一和第二冷却部件将多个晶片附近的环境温度调节到第一温度，通过在第一温度下引入反应气体来处理晶片，然后，加热部分将晶片附近的气氛的温度从第一温度快速升高到第二温度，以部分地分离在处理期间产生的副产物，维持第二温度以将大部分副产物与晶片分离，并且处理步骤在同一空间内原位实施。因此，可以蚀刻形成在几个晶片上的自然氧化物层，并且可以在相同的室中原位除去反应副产物，从而提高生产率。

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