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1. 发明授权

US08658510B2 Processing phase change material to improve programming speed 有权
标题翻译：处理相变材料，提高编程速度
公开(公告)号：US08658510B2
公开(公告)日：2014-02-25
申请号：US13585936
申请日：2012-08-15
申请人： Stephen J. Hudgens , Tyler Lowrey
发明人： Stephen J. Hudgens , Tyler Lowrey
IPC分类号： H01L21/20
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1625 , H01L45/165 , H01L45/1658
摘要： A phase change material may be processed to reduce its microcrystalline grain size and may also be processed to increase the crystallization or set programming speed of the material. For example, material doped with nitrogen to reduce grain size may be doped with titanium to reduce crystallization time.
摘要翻译：可以处理相变材料以降低其微晶粒度，并且还可以加工以增加材料的结晶或设定编程速度。例如，掺杂氮以减小晶粒尺寸的材料可以掺杂钛以减少结晶时间。

2. 发明授权

US08269206B2 Processing phase change material to improve programming speed 有权
标题翻译：处理相变材料，提高编程速度
公开(公告)号：US08269206B2
公开(公告)日：2012-09-18
申请号：US13004167
申请日：2011-01-11
申请人： Stephen J. Hudgens , Tyler Lowrey
发明人： Stephen J. Hudgens , Tyler Lowrey
IPC分类号： H01L29/02
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1625 , H01L45/165 , H01L45/1658
摘要： A phase change material may be processed to reduce its microcrystalline grain size and may also be processed to increase the crystallization or set programming speed of the material. For example, material doped with nitrogen to reduce grain size may be doped with titanium to reduce crystallization time.
摘要翻译：可以处理相变材料以降低其微晶粒度，并且还可以加工以增加材料的结晶或设定编程速度。例如，掺杂氮以减小晶粒尺寸的材料可以掺杂钛以减少结晶时间。

3. 发明授权

US08098519B2 Semiconductor phase change memory using multiple phase change layers 有权
公开(公告)号：US08098519B2
公开(公告)日：2012-01-17
申请号：US12764157
申请日：2010-04-21
申请人： Charles H. Dennison , Stephen J. Hudgens
发明人： Charles H. Dennison , Stephen J. Hudgens
IPC分类号： G11C11/00
CPC分类号： H01L45/065 , G11C13/0004 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625 , Y10S977/754
摘要： In accordance with some embodiments, a phase change memory may be formed in which the thermal conductivity in the region outside the programmed volume of phase change material is reduced. This may reduce the power consumption of the resulting phase change memory. The reduction in power consumption may be achieved by forming distinct layers of phase change material that have little or no mixing between them outside the programmed volume. For example, in one embodiment, a diffusion barrier layer may be maintained between the two distinct phase change layers. In another embodiment, a face centered cubic chalcogenide structure may be utilized.

4. 发明授权

US08062921B2 Phase change memories with improved programming characteristics 有权
标题翻译：具有改进编程特性的相变存储器
公开(公告)号：US08062921B2
公开(公告)日：2011-11-22
申请号：US12364698
申请日：2009-02-03
申请人： Guy C. Wicker , Carl Schell , Sergey A. Kostylev , Stephen J. Hudgens
发明人： Guy C. Wicker , Carl Schell , Sergey A. Kostylev , Stephen J. Hudgens
IPC分类号： H01L21/00
CPC分类号： H01L45/141 , H01L27/2427 , H01L45/06
摘要： A phase change memory may be made with improved speed and stable characteristics over extended cycling. The alloy may be selected by looking at alloys that become stuck in either the set or the reset state and finding a median or intermediate composition that achieves better cycling performance. Such alloys may also experience faster programming and may have set and reset programming speeds that are substantially similar.
摘要翻译：可以在延长的循环中以改进的速度和稳定的特性制造相变存储器。可以通过观察在凝固或复位状态下粘合的合金并找到实现更好的循环性能的中间或中间组合物来选择合金。这样的合金也可以经历更快的编程并且可以具有基本相似的设置和复位编程速度。

5. 发明授权

US06617192B1 Electrically programmable memory element with multi-regioned contact 有权
标题翻译：具有多区域接触的电可编程存储元件
公开(公告)号：US06617192B1
公开(公告)日：2003-09-09
申请号：US09677957
申请日：2000-10-03
申请人： Tyler Lowrey , Stephen J. Hudgens , Patrick J. Klersy
发明人： Tyler Lowrey , Stephen J. Hudgens , Patrick J. Klersy
IPC分类号： H01L2100
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： An electrically operated memory element having a contact in electrical communication with a memory material programmable to at least a first resistance state and a second resistance state. Preferably, the contact includes at least a first region having a first resistivity and a second region having a second resistivity greater than the first resistivity where the more resistive region is adjacent to the memory material.
摘要翻译：一种电操作的存储元件，其具有与可编程为至少第一电阻状态和第二电阻状态的存储器材料电连通的触点。优选地，触点至少包括具有第一电阻率的第一区域和具有大于第一电阻率的第二电阻率的第二区域，其中较大电阻区域与存储材料相邻。

6. 发明授权

US5596522A Homogeneous compositions of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements 失效
标题翻译：微晶半导体材料，半导体器件和由其制造的直接可重写存储器元件的均匀组成，以及由存储元件制造的阵列
公开(公告)号：US5596522A
公开(公告)日：1997-01-21
申请号：US510400
申请日：1995-08-02
申请人： Stanford R. Ovshinsky , Stephen J. Hudgens , David Strand , Wolodymyr Czubatyj , Jesus Gonzalez-Hernandez , Hellmut Fritzsche , Quiyi Ye , Sergey A. Kostylev , Benjamin S. Chao
发明人： Stanford R. Ovshinsky , Stephen J. Hudgens , David Strand , Wolodymyr Czubatyj , Jesus Gonzalez-Hernandez , Hellmut Fritzsche , Quiyi Ye , Sergey A. Kostylev , Benjamin S. Chao
IPC分类号： G11C11/56 , G11C16/02 , H01L27/24 , H01L45/00
CPC分类号： G11C11/56 , C01B19/007 , G11C11/5678 , G11C13/0004 , H01L27/2409 , H01L27/2463 , H01L45/065 , H01L45/1233 , H01L45/1253 , H01L45/144 , G11C13/04 , G11C2213/72
摘要： A unique class of microcrystalline semiconductor materials which can be modulated, within a crystalline phase, to assume any one of a large dynamic range of different Fermi level positions while maintaining a substantially constant band gap over the entire range, even after a modulating field has been removed. A solid state, directly overwritable, electronic and optical, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon the novel switching characteristics provided by said unique class of semiconductor materials, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is in turn characterized, inter alia, by numerous stable and non-volatile detectable configurations of local atomic order, which configurations can be selectively and repeatably accessed by input signals of varying levels.
摘要翻译：一种独特的微晶半导体材料，其可以在晶相内被调制以承担不同费米能级位置的大动态范围中的任何一种，同时在整个范围内保持基本恒定的带隙，即使在调制场已经被删除。基于由所述独特类型的半导体材料提供的新型开关特性的固态，直接可重写的，电子和光学，非易失性，高密度，低成本，低能量，高速度，容易制造的多单元单元存储器，其中存储器在显着降低的能量水平下显示出高数量级的开关速度。特别地，本发明的新颖记忆特征还在于本地原子序列的许多稳定和非易失性可检测配置，其可通过不同等级的输入信号选择性地和可重复地访问这些配置。

7. 发明授权

US4766471A Thin film electro-optical devices 失效
标题翻译：薄膜电光器件
公开(公告)号：US4766471A
公开(公告)日：1988-08-23
申请号：US821643
申请日：1986-01-23
申请人： Stanford R. Ovshinsky , Robert R. Johnson , Stephen J. Hudgens , Roger W. Pryor , Guy C. Wicker , Robert S. Nolan
发明人： Stanford R. Ovshinsky , Robert R. Johnson , Stephen J. Hudgens , Roger W. Pryor , Guy C. Wicker , Robert S. Nolan
IPC分类号： H01L29/739 , H01L31/113 , H01L31/16 , H01L31/173 , H01L33/00 , H01S5/026 , H04B10/00 , H01L31/12
CPC分类号： H01L31/162 , H01L29/7391 , H01L31/113 , H01L31/173 , H01L33/0004 , H01S5/0264 , H04B10/802
摘要： An electro-optical communication device which includes a light transmissive conduit integrally formed to interconnect a light emitter and a light detector. The length over which the light transmissive conduit extends is substantially greater than the size of either the light emitter or the light detector. In the preferred embodiment, the light emitter and the light detector are each formed from amorphous semiconductor alloy material and may be substantially surrounded by the light transmissive conduit.
摘要翻译：一种电光通信装置，其包括整体形成以将发光器和光检测器互连的透光导管。透光导管延伸的长度实质上大于光发射器或光检测器的尺寸。在优选实施例中，光发射器和光检测器各自由非晶半导体合金材料形成，并且可以基本上被透光导管包围。

8. 发明授权

US4715927A Improved method of making a photoconductive member 失效
标题翻译：改进的制造感光体的方法
公开(公告)号：US4715927A
公开(公告)日：1987-12-29
申请号：US941244
申请日：1986-11-21
申请人： Annette G. Johncock , Stephen J. Hudgens
发明人： Annette G. Johncock , Stephen J. Hudgens
IPC分类号： C23C16/511 , H01L31/09 , H01L31/20 , C30B25/02
CPC分类号： H01L31/095 , C23C16/511 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A process for making photoconductive semiconductor alloys and members with high reaction gas conversion efficiencies and at high deposition rates utilizes microwave energy to form a deposition plasma. The high deposition rates and high gas conversion efficiencies allow photoconductive members to be formed of amorphous semiconductor alloys at commercially viable rates.The process includes coupling microwave energy into a substantially enclosed reaction vessel containing a substrate and depositing amorphous photoconductive alloys onto the substrate from a reaction gas introduced into the vessel. The photoconductive member includes a bottom blocking layer, a photoconductive layer and a top blocking layer. The photoconductive member can be formed in a negative or positive charge type configuration. The members can include a top blocking enhancement layer and/or an improved infrared photoresponsive layer.
摘要翻译：用于制造光导半导体合金和具有高反应气体转化效率和高沉积速率的部件的方法利用微波能量来形成沉积等离子体。高沉积速率和高气体转换效率使得光电导元件以商业上可行的速率由非晶半导体合金形成。该方法包括将微波能量耦合到包含基底的基本封闭的反应容器中，并将非晶态光导电合金从引入容器的反应气体沉积到基底上。感光体包括底部阻挡层，光电导层和顶部阻挡层。感光体可以形成为负电荷型或正电荷型。构件可以包括顶部阻挡增强层和/或改进的红外光响应层。

9. 发明授权

US4668968A Integrated circuit compatible thin film field effect transistor and method of making same 失效
标题翻译：集成电路兼容薄膜场效应晶体管及其制作方法
公开(公告)号：US4668968A
公开(公告)日：1987-05-26
申请号：US610130
申请日：1984-05-14
申请人： Stanford R. Ovshinsky , Stephen J. Hudgens
发明人： Stanford R. Ovshinsky , Stephen J. Hudgens
IPC分类号： H01L29/78 , H01L27/12 , H01L29/161 , H01L29/40 , H01L29/786 , H01L29/04 , H01L29/54
CPC分类号： H01L29/78684 , H01L29/161
摘要： There is disclosed integrated circuit compatible thin film field effect transistors which can be fabricated at low temperatures and operated at fast switching rates for use, for example, in video rate applications. The transistors include a body of germanium semiconductor material having a structure more ordered than amorphous material and less ordered than single crystalline material. The source and drain of the transistors comprises rectifying contacts formed on or in the body of germanium semiconductor material. Also disclosed are a method of making the transistors and an electronically addressable array system utilizing the transistors to advantage.
摘要翻译：公开了集成电路兼容的薄膜场效应晶体管，其可以在低温下制造并且以快速切换速率操作以用于例如视频速率应用。晶体管包括具有比无定形材料更有序的结构的锗半导体材料体，并且比单晶材料有序。晶体管的源极和漏极包括形成在锗半导体材料体内或体内的整流触点。还公开了制造晶体管和利用晶体管的电子可寻址阵列系统的方法。

10. 发明授权

US07729162B2 Semiconductor phase change memory using multiple phase change layers 有权
标题翻译：半导体相变存储器使用多个相变层
公开(公告)号：US07729162B2
公开(公告)日：2010-06-01
申请号：US11973565
申请日：2007-10-09
申请人： Charles H. Dennison , Stephen J. Hudgens
发明人： Charles H. Dennison , Stephen J. Hudgens
IPC分类号： G11C11/00
CPC分类号： H01L45/065 , G11C13/0004 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625 , Y10S977/754
摘要： In accordance with some embodiments, a phase change memory may be formed in which the thermal conductivity in the region outside the programmed volume of phase change material is reduced. This may reduce the power consumption of the resulting phase change memory. The reduction in power consumption may be achieved by forming distinct layers of phase change material that have little or no mixing between them outside the programmed volume. For example, in one embodiment, a diffusion barrier layer may be maintained between the two distinct phase change layers. In another embodiment, a face centered cubic chalcogenide structure may be utilized.
摘要翻译：根据一些实施例，可以形成相变存储器，其中减少了编程体积相变材料之外的区域中的热导率。这可能会降低所得相变存储器的功耗。功耗的降低可以通过在编程体积之外形成很少或不混合的相变材料的不同层来实现。例如，在一个实施例中，可以在两个不同的相变层之间保持扩散阻挡层。在另一个实施方案中，可以使用面心立方硫属元素化合物结构。

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