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1. 发明授权

US08363446B2 Multilevel variable resistance memory cell utilizing crystalline programming states 有权
标题翻译：利用晶体编程状态的多电平可变电阻存储单元
公开(公告)号：US08363446B2
公开(公告)日：2013-01-29
申请号：US12578638
申请日：2009-10-14
申请人： Wolodymyr Czubatyj , Tyler Lowrey , Charles Dennison , Carl Schell
发明人： Wolodymyr Czubatyj , Tyler Lowrey , Charles Dennison , Carl Schell
IPC分类号： G11C11/00
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , G11C13/0069 , G11C2013/0092
摘要： A method of programming an electrical variable resistance memory device. When applied to variable resistance memory devices that incorporate a phase-change material as the active material, the method utilizes a plurality of crystalline programming states. The crystalline programming states are distinguishable on the basis of resistance, where the resistance values of the different states are stable with time and exhibit little or no drift. As a result, the programming scheme is particularly suited to multilevel memory applications. The crystalline programming states may be achieved by stabilizing crystalline phases that adopt different crystallographic structures or by stabilizing crystalline phases that include mixtures of two or more distinct crystallographic structures that vary in the relative proportions of the different crystallographic structures. The programming scheme incorporates at least two crystalline programming states and further includes at least a third programming state that may be a crystalline, amorphous or mixed crystalline-amorphous state.
摘要翻译：一种编程电可变电阻存储器件的方法。当应用于包含相变材料作为活性材料的可变电阻存储器件时，该方法利用多个晶体编程状态。结晶编程状态可以根据电阻进行区分，其中不同状态的电阻值随时间稳定并且表现出很小的或没有漂移。因此，编程方案特别适用于多层存储器应用。晶体编程状态可以通过稳定采用不同晶体结构的结晶相或通过稳定结晶相来实现，所述结晶相包括两种或更多种不同结晶学结构的混合物，其在不同结晶学结构的相对比例中变化。编程方案包含至少两个晶体编程状态，并且还包括至少第三编程状态，其可以是晶体，无定形或混合晶体 - 非晶状态。

2. 发明授权

US08062921B2 Phase change memories with improved programming characteristics 有权
标题翻译：具有改进编程特性的相变存储器
公开(公告)号：US08062921B2
公开(公告)日：2011-11-22
申请号：US12364698
申请日：2009-02-03
申请人： Guy C. Wicker , Carl Schell , Sergey A. Kostylev , Stephen J. Hudgens
发明人： Guy C. Wicker , Carl Schell , Sergey A. Kostylev , Stephen J. Hudgens
IPC分类号： H01L21/00
CPC分类号： H01L45/141 , H01L27/2427 , H01L45/06
摘要： A phase change memory may be made with improved speed and stable characteristics over extended cycling. The alloy may be selected by looking at alloys that become stuck in either the set or the reset state and finding a median or intermediate composition that achieves better cycling performance. Such alloys may also experience faster programming and may have set and reset programming speeds that are substantially similar.
摘要翻译：可以在延长的循环中以改进的速度和稳定的特性制造相变存储器。可以通过观察在凝固或复位状态下粘合的合金并找到实现更好的循环性能的中间或中间组合物来选择合金。这样的合金也可以经历更快的编程并且可以具有基本相似的设置和复位编程速度。

3. 发明申请

US20090298222A1 Method for manufacturing Chalcogenide devices 审中-公开
标题翻译：制造硫族化物装置的方法
公开(公告)号：US20090298222A1
公开(公告)日：2009-12-03
申请号：US12154952
申请日：2008-05-28
申请人： Tyler Lowrey , Jeff Fournier , Robert Nuss , Carl Schell , Guy Wicker , Jim Ricker , James Reed , Ed Spall , Sergey Kostylev , Wolodymyr Czubatyj , Regino Sandoval
发明人： Tyler Lowrey , Jeff Fournier , Robert Nuss , Carl Schell , Guy Wicker , Jim Ricker , James Reed , Ed Spall , Sergey Kostylev , Wolodymyr Czubatyj , Regino Sandoval
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L45/04 , H01L45/144 , H01L45/1608
摘要： A method of chalcogenide device formation includes treatment of the surface upon which the chalcogenide material is deposited. The treatment reduces or eliminates native oxides and other contaminants from the surface, thereby increasing the adhesion of the chalcogenide layer to the treated surface, eliminating voids between the chalcogenide layer and deposition surface and reducing the degradation of chalcogenide material due to the migration of contaminants into the chalcogenide.
摘要翻译：硫族化物器件形成的方法包括处理沉积硫族化物材料的表面。该处理减少或消除了表面的天然氧化物和其他污染物，从而增加了硫属化物层与处理过的表面的粘附性，消除了硫属化物层与沉积表面之间的空隙，并且由于污染物的迁移而降低了硫族化物材料的降解硫族化物。

4. 发明授权

US08685291B2 Variable resistance materials with superior data retention characteristics 有权
标题翻译：具有优异数据保留特性的可变电阻材料
公开(公告)号：US08685291B2
公开(公告)日：2014-04-01
申请号：US12775078
申请日：2010-05-06
申请人： Carl Schell , Wolodymyr Czubatyj
发明人： Carl Schell , Wolodymyr Czubatyj
IPC分类号： H01B1/02 , H01B1/06 , H01L21/06
CPC分类号： H01L45/1625 , H01L45/06 , H01L45/1233 , H01L45/144
摘要： Variable resistance memory compositions and devices exhibiting superior data retention characteristics at elevated temperature. The compositions are composite materials that include a variable resistance component and an inert component. The variable resistance component may include a phase-change material and the inert component may include a dielectric material. The phase-change material may include Ge, Sb, and Te, where the atomic concentration of Sb is between 3% and 16% and/or the Sb/Ge ratio is between 0.07 and 0.68 and/or the Ge/Te ratio is between 0.6 and 1.1 and/or the concentration of dielectric component (expressed as the sum of the atomic concentrations of the constituent elements thereof) is between 5% and 50%. The compositions exhibit high ten-year data retention temperatures and long data retention times at elevated temperatures.
摘要翻译：可变电阻记忆组合物和在升高的温度下表现出优异的数据保留特性的装置。组合物是包含可变电阻组分和惰性组分的复合材料。可变电阻部件可以包括相变材料，并且惰性部件可以包括电介质材料。相变材料可以包括Ge，Sb和Te，其中Sb的原子浓度在3％和16％之间，和/或Sb / Ge比在0.07和0.68之间和/或Ge / Te比在 0.6和1.1和/或介电成分的浓度（以其构成元素的原子浓度之和表示）在5％至50％之间。该组合物在高温下表现出十年以上的数据保存温度和较长的数据保留时间。

5. 发明授权

US07504675B2 Phase change memories with improved programming characteristics 有权
标题翻译：具有改进编程特性的相变存储器
公开(公告)号：US07504675B2
公开(公告)日：2009-03-17
申请号：US11709520
申请日：2007-02-22
申请人： Guy C. Wicker , Carl Schell , Sergey A. Kostylev , Stephen J. Hudgens
发明人： Guy C. Wicker , Carl Schell , Sergey A. Kostylev , Stephen J. Hudgens
IPC分类号： H01L29/76
CPC分类号： H01L45/141 , H01L27/2427 , H01L45/06
摘要： A phase change memory may be made with improved speed and stable characteristics over extended cycling. The alloy may be selected by looking at alloys that become stuck in either the set or the reset state and finding a median or intermediate composition that achieves better cycling performance. Such alloys may also experience faster programming and may have set and reset programming speeds that are substantially similar.
摘要翻译：可以在延长的循环中以改进的速度和稳定的特性制造相变存储器。可以通过观察在凝固或复位状态下粘合的合金并找到实现更好的循环性能的中间或中间组合物来选择合金。这样的合金也可以经历更快的编程并且可以具有基本相似的设置和复位编程速度。

6. 发明申请

US20080203376A1 Phase change memories with improved programming characteristics 有权
标题翻译：具有改进编程特性的相变存储器
公开(公告)号：US20080203376A1
公开(公告)日：2008-08-28
申请号：US11709520
申请日：2007-02-22
申请人： Guy C. Wicker , Carl Schell , Sergey A. Kostylev , Stephen J. Hudgens
发明人： Guy C. Wicker , Carl Schell , Sergey A. Kostylev , Stephen J. Hudgens
IPC分类号： H01L47/00
CPC分类号： H01L45/141 , H01L27/2427 , H01L45/06
摘要： A phase change memory may be made with improved speed and stable characteristics over extended cycling. The alloy may be selected by looking at alloys that become stuck in either the set or the reset state and finding a median or intermediate composition that achieves better cycling performance. Such alloys may also experience faster programming and may have set and reset programming speeds that are substantially similar.
摘要翻译：可以在延长的循环中以改进的速度和稳定的特性制造相变存储器。可以通过观察在凝固或复位状态下粘合的合金并找到实现更好的循环性能的中间或中间组合物来选择合金。这样的合金也可以经历更快的编程并且可以具有基本相似的设置和复位编程速度。

7. 发明授权

US08908413B2 Programmable resistance memory 有权
标题翻译：可编程电阻记忆
公开(公告)号：US08908413B2
公开(公告)日：2014-12-09
申请号：US13216675
申请日：2011-08-24
申请人： Tyler Lowrey , Carl Schell , Wally Czubatyj , Steve Hudgens , Jon Maimon , Jeff Fournier , Mike Hennessey , Ed Spall
发明人： Tyler Lowrey , Carl Schell , Wally Czubatyj , Steve Hudgens , Jon Maimon , Jeff Fournier , Mike Hennessey , Ed Spall
IPC分类号： G11C11/00 , G11C11/56 , G11C13/00
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , G11C13/0035
摘要： A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
摘要翻译：存储器包括具有高比例的动态范围与漂移系数相变存储器件的可编程电阻阵列。

8. 发明申请

US20090142882A1 Phase Change Memories With Improved Programming Characteristics 有权
标题翻译：相变记忆与改进的编程特性
公开(公告)号：US20090142882A1
公开(公告)日：2009-06-04
申请号：US12364698
申请日：2009-02-03
申请人： Guy C. Wicker , Carl Schell , Sergey A. Kostylev , Stephen J. Hudgens
发明人： Guy C. Wicker , Carl Schell , Sergey A. Kostylev , Stephen J. Hudgens
IPC分类号： H01L21/00
CPC分类号： H01L45/141 , H01L27/2427 , H01L45/06
摘要： A phase change memory may be made with improved speed and stable characteristics over extended cycling. The alloy may be selected by looking at alloys that become stuck in either the set or the reset state and finding a median or intermediate composition that achieves better cycling performance. Such alloys may also experience faster programming and may have set and reset programming speeds that are substantially similar.
摘要翻译：可以在延长的循环中以改进的速度和稳定的特性制造相变存储器。可以通过观察在凝固或复位状态下粘合的合金并找到实现更好的循环性能的中间或中间组合物来选择合金。这样的合金也可以经历更快的编程并且可以具有基本相似的设置和复位编程速度。

9. 发明授权

US08217379B2 Arsenic-containing variable resistance materials 有权
标题翻译：含砷可变电阻材料
公开(公告)号：US08217379B2
公开(公告)日：2012-07-10
申请号：US12505854
申请日：2009-07-20
申请人： Carl Schell , Guy Wicker , Jon Maimon
发明人： Carl Schell , Guy Wicker , Jon Maimon
IPC分类号： H01L29/02
CPC分类号： C22C12/00 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/144 , H01L45/1625 , H01L45/1641 , H01L45/1683 , Y10T428/12
摘要： A variable resistance material for memory applications. The material includes a base Ge—Sb—Te composition and further includes As-doping. The materials were included in variable resistance memory devices. Incorporation of As in the variable resistance composition led to a significant increase in the operational life of the device and, unexpectedly, did not reduce the programming speed of the device. In one embodiment, the composition includes at atomic concentration of Ge in the range from 7%-13%, an atomic concentration of Sb in the range from 50%-70%, an atomic concentration of Te in the range from 20%-30%, and an atomic concentration of As in the range from 2%-15%.
摘要翻译：用于存储器应用的可变电阻材料。该材料包括基底Ge-Sb-Te组合物，并且还包括As掺杂。这些材料包括在可变电阻存储器件中。在可变电阻组合中引入As导致器件的使用寿命显着增加，并且意外地没有降低器件的编程速度。在一个实施方案中，组合物包括Ge原子浓度在7％-13％，Sb的原子浓度在50％-70％范围内，Te的原子浓度在20％-30的范围内％，As的原子浓度在2％-15％的范围内。

10. 发明申请

US20110305075A1 Programmable Resistance Memory 有权
标题翻译：可编程电阻存储器
公开(公告)号：US20110305075A1
公开(公告)日：2011-12-15
申请号：US13216675
申请日：2011-08-24
申请人： Tyler Lowrey , Carl Schell , Wally Czubatyj , Steve Hudgens , Jon Maimon , Jeff Fournier , Mike Hennessey , Ed Spall
发明人： Tyler Lowrey , Carl Schell , Wally Czubatyj , Steve Hudgens , Jon Maimon , Jeff Fournier , Mike Hennessey , Ed Spall
IPC分类号： G11C11/00
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , G11C13/0035
摘要： A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
摘要翻译：存储器包括具有高比例的动态范围与漂移系数相变存储器件的可编程电阻阵列。

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