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    • 2. 发明申请
    • DYNAMICALLY DRIVEN DEEP N-WELL CIRCUIT
    • 动态驱动深层N电路
    • US20110025407A1
    • 2011-02-03
    • US12902896
    • 2010-10-12
    • Janet M. BRUNSILIUSStephen R. KOSICCorey D. PETERSEN
    • Janet M. BRUNSILIUSStephen R. KOSICCorey D. PETERSEN
    • H03K3/01
    • H03K17/162H01L21/823878H01L21/823892H01L27/0921H01L27/0928H03K2217/0018
    • A circuit can include an NMOS transistor having a drain and a source, a p-well containing the drain and the source, an n-well under the p-well, a circuit node, and a connection element connecting the n-well to the circuit node. The connection element can include a diode having an anode terminal connected to the circuit node and a cathode terminal connected to the n-well, a resistor having a first terminal connected to the circuit node and a second terminal connected to the n-well, a conductor directly connecting the n-well to the circuit node, or a well switch configured to connect the n-well to the circuit node during an enable phase of a switching signal and to electrically float the n-well during a non-enable phase of the switching signal. The diode can include a diode-connected transistor. The circuit node can be configured to receive a predetermined voltage having a magnitude equal to or greater than an upper supply voltage.
    • 电路可以包括具有漏极和源极的NMOS晶体管,包含漏极和源极的p阱,p阱下面的n阱,电路节点和将n阱连接到 电路节点。 连接元件可以包括具有连接到电路节点的阳极端子和连接到n阱的阴极端子的二极管,具有连接到电路节点的第一端子和连接到n阱的第二端子的电阻器, 直接连接n阱到电路节点的导体,或者在开关信号的使能阶段期间配置成将n阱连接到电路节点的阱开关,并且在非使能阶段期间使n阱电浮动 开关信号。 二极管可以包括二极管连接的晶体管。 电路节点可以被配置为接收具有等于或大于上电源电压的幅度的预定电压。
    • 5. 发明授权
    • Dynamically driven deep n-well circuit
    • 动态驱动深n阱电路
    • US09397651B2
    • 2016-07-19
    • US12902896
    • 2010-10-12
    • Janet M. BrunsiliusStephen R. KosicCorey D. Petersen
    • Janet M. BrunsiliusStephen R. KosicCorey D. Petersen
    • H03K3/01H03K17/16H01L21/8238H01L27/092
    • H03K17/162H01L21/823878H01L21/823892H01L27/0921H01L27/0928H03K2217/0018
    • A circuit can include an NMOS transistor having a drain and a source, a p-well containing the drain and the source, an n-well under the p-well, a circuit node, and a connection element connecting the n-well to the circuit node. The connection element can include a diode having an anode terminal connected to the circuit node and a cathode terminal connected to the n-well, a resistor having a first terminal connected to the circuit node and a second terminal connected to the n-well, a conductor directly connecting the n-well to the circuit node, or a well switch configured to connect the n-well to the circuit node during an enable phase of a switching signal and to electrically float the n-well during a non-enable phase of the switching signal. The diode can include a diode-connected transistor. The circuit node can be configured to receive a predetermined voltage having a magnitude equal to or greater than an upper supply voltage.
    • 电路可以包括具有漏极和源极的NMOS晶体管,包含漏极和源极的p阱,p阱下面的n阱,电路节点和将n阱连接到 电路节点。 连接元件可以包括具有连接到电路节点的阳极端子和连接到n阱的阴极端子的二极管,具有连接到电路节点的第一端子和连接到n阱的第二端子的电阻器, 直接连接n阱到电路节点的导体,或者在开关信号的使能阶段期间配置成将n阱连接到电路节点的阱开关,并且在非使能阶段期间使n阱电浮动 开关信号。 二极管可以包括二极管连接的晶体管。 电路节点可以被配置为接收具有等于或大于上电源电压的幅度的预定电压。