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1. 发明授权

US08952876B2 Display substrate and method of manufacturing the same 有权
标题翻译：显示基板及其制造方法
公开(公告)号：US08952876B2
公开(公告)日：2015-02-10
申请号：US12900846
申请日：2010-10-08
申请人： Hyung-Jun Kim , Sung-Haeng Cho , Yong-Mo Choi
发明人： Hyung-Jun Kim , Sung-Haeng Cho , Yong-Mo Choi
IPC分类号： G09G3/36 , G11C19/28 , G02F1/1362 , G11C19/18
CPC分类号： G11C19/28 , G02F1/1362 , G02F2202/104 , G11C19/184
摘要： A display substrate includes a base substrate, a first insulating layer formed on a base substrate, a pixel including a pixel electrode having the first insulating layer, and a circuit including a circuit transistor disposed on a peripheral area to drive the pixel. The pixel includes a first channel formed on the base substrate having the first insulating layer formed thereon. The first channel includes a poly-silicon layer, a first source electrode and a first drain electrode formed on the first channel that are spaced apart from each other, and a first gate electrode formed on the first source electrode and the first drain electrode corresponding to the first channel which is formed of the transparent conductive material. The poly-silicon layer is formed at a front channel portion of the first channel proximal to the first gate electrode through the first gate electrode.
摘要翻译：显示基板包括基底基板，形成在基底基板上的第一绝缘层，包括具有第一绝缘层的像素电极的像素，以及包括设置在外围区域上以驱动像素的电路晶体管的电路。像素包括形成在其上形成有第一绝缘层的基底基板上的第一通道。第一通道包括形成在第一通道上彼此间隔开的多晶硅层，第一源电极和第一漏极，以及形成在第一源电极和第一漏电极上的第一栅电极，由透明导电材料形成的第一通道。多晶硅层通过第一栅电极形成在靠近第一栅电极的第一通道的前通道部分处。

2. 发明授权

US08598577B2 Display substrate and method of manufacturing the same 有权
标题翻译：显示基板及其制造方法
公开(公告)号：US08598577B2
公开(公告)日：2013-12-03
申请号：US13177783
申请日：2011-07-07
申请人： Jae-Woo Park , Dong-Hoon Lee , Sung-Haeng Cho , Woo-Geun Lee , Hye-Young Ryu , Young-Joo Choi
发明人： Jae-Woo Park , Dong-Hoon Lee , Sung-Haeng Cho , Woo-Geun Lee , Hye-Young Ryu , Young-Joo Choi
IPC分类号： H01L29/786
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L29/458
摘要： A display substrate includes a gate line extending in a first direction on a base substrate, a data line on the base substrate and extending in a second direction crossing the first direction, a gate insulating layer on the gate line, a thin-film transistor and a pixel electrode. The thin-film transistor includes a gate electrode electrically connected the gate line, an oxide semiconductor pattern, and source and drain electrodes on the oxide semiconductor pattern and spaced apart from each other. The oxide semiconductor pattern includes a first semiconductor pattern including indium oxide and a second semiconductor pattern including indium-free oxide. The pixel electrode is electrically connected the drain electrode.
摘要翻译：显示基板包括在基底基板上沿第一方向延伸的栅极线，在基底基板上的数据线，并且沿与第一方向交叉的第二方向延伸，栅极线上的栅极绝缘层，薄膜晶体管和像素电极。薄膜晶体管包括栅电极，电极连接栅极线，氧化物半导体图案以及氧化物半导体图案上的源电极和漏电极并彼此间隔开。氧化物半导体图案包括包括氧化铟的第一半导体图案和包含无铟氧化物的第二半导体图案。像素电极与漏电极电连接。

3. 发明申请

US20120133873A1 LIQUID CRYSTAL DISPLAY AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：液晶显示器及其制造方法
公开(公告)号：US20120133873A1
公开(公告)日：2012-05-31
申请号：US13193488
申请日：2011-07-28
申请人： Ji-Young PARK , Sang Gab Kim , Yong-Mo Choi , Hyung Jun Kim , Sung-Haeng Cho , Hong-Sick Park , Byeong-Jin Lee , Soo-Wan Yoon
发明人： Ji-Young PARK , Sang Gab Kim , Yong-Mo Choi , Hyung Jun Kim , Sung-Haeng Cho , Hong-Sick Park , Byeong-Jin Lee , Soo-Wan Yoon
IPC分类号： G02F1/1333 , H01L33/16
CPC分类号： H01L27/1288 , G02F1/1362 , G02F2001/136231 , H01L29/41733
摘要： A method of manufacturing a liquid crystal display includes: forming a gate line including a gate electrode on a first substrate; forming a gate insulating layer on the gate line; sequentially forming a semiconductor layer, an amorphous silicon layer, and a data metal layer on the entire surface of the gate insulating layer; aligning the edges of the semiconductor layer and the data metal layer; forming a transparent conductive layer on the gate insulating layer and the data metal layer; forming a first pixel electrode and a second pixel electrode by patterning the transparent conductive layer; and forming a data line including a source electrode, a drain electrode, and an ohmic contact layer by etching the data metal layer and the amorphous silicon layer, using the first pixel electrode and the second pixel electrode as a mask, and exposing the semiconductor between the source electrode and the drain electrode.
摘要翻译：制造液晶显示器的方法包括：在第一基板上形成包括栅电极的栅极线; 在栅极线上形成栅极绝缘层; 在栅极绝缘层的整个表面上依次形成半导体层，非晶硅层和数据金属层; 对准半导体层和数据金属层的边缘; 在栅绝缘层和数据金属层上形成透明导电层; 通过图案化透明导电层形成第一像素电极和第二像素电极; 以及使用所述第一像素电极和所述第二像素电极作为掩模，通过蚀刻所述数据金属层和所述非晶硅层来形成包括源电极，漏电极和欧姆接触层的数据线，并且使所述半导体在源电极和漏电极。

4. 发明授权

US08183570B2 Thin film transistor array panel 有权
标题翻译：薄膜晶体管阵列面板
公开(公告)号：US08183570B2
公开(公告)日：2012-05-22
申请号：US12946953
申请日：2010-11-16
申请人： Dong-Gyu Kim , Sung-Haeng Cho , Hyung-Jun Kim , Sung-Ryul Kim , Yong-Mo Choi
发明人： Dong-Gyu Kim , Sung-Haeng Cho , Hyung-Jun Kim , Sung-Ryul Kim , Yong-Mo Choi
IPC分类号： H01L29/04
CPC分类号： G02F1/136213 , H01L27/1255
摘要： A thin film transistor array panel, in which a middle storage electrode and a storage electrode overlapping a drain electrode of a thin film transistor thereby forming a storage capacitance are formed. Accordingly, sufficient storage capacitance may be formed without a decrease of the aperture ratio and light transmittance of a liquid crystal display. Also, the capacitance may be sufficiently formed through the connecting member connected to a gate metal layer.
摘要翻译：一种薄膜晶体管阵列面板，其中形成中间存储电极和与薄膜晶体管的漏极重叠从而形成存储电容的存储电极。因此，可以形成足够的存储电容，而不会降低液晶显示器的开口率和透光率。此外，可以通过连接到栅极金属层的连接构件充分形成电容。

5. 发明申请

US20120018720A1 DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：显示基板及其制造方法
公开(公告)号：US20120018720A1
公开(公告)日：2012-01-26
申请号：US13177783
申请日：2011-07-07
申请人： Jae-Woo PARK , Dong-Hoon LEE , Sung-Haeng CHO , Woo-Geun LEE , Hye-Young RYU , Young-Joo CHOI
发明人： Jae-Woo PARK , Dong-Hoon LEE , Sung-Haeng CHO , Woo-Geun LEE , Hye-Young RYU , Young-Joo CHOI
IPC分类号： H01L29/786 , H01L21/44
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L29/458
摘要： A display substrate includes a gate line extending in a first direction on a base substrate, a data line on the base substrate and extending in a second direction crossing the first direction, a gate insulating layer on the gate line, a thin-film transistor and a pixel electrode. The thin-film transistor includes a gate electrode electrically connected the gate line, an oxide semiconductor pattern, and source and drain electrodes on the oxide semiconductor pattern and spaced apart from each other. The oxide semiconductor pattern includes a first semiconductor pattern including indium oxide and a second semiconductor pattern including indium-free oxide. The pixel electrode is electrically connected the drain electrode.
摘要翻译：显示基板包括在基底基板上沿第一方向延伸的栅极线，在基底基板上的数据线，并且沿与第一方向交叉的第二方向延伸，栅极线上的栅极绝缘层，薄膜晶体管和像素电极。薄膜晶体管包括栅电极，电极连接栅极线，氧化物半导体图案以及氧化物半导体图案上的源电极和漏电极并彼此间隔开。氧化物半导体图案包括包括氧化铟的第一半导体图案和包含无铟氧化物的第二半导体图案。像素电极与漏电极电连接。

6. 发明申请

US20110146066A1 DISPLAY SUBSTRATE, LIQUID CRYSTAL DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF REPAIRING THE SAME 有权
标题翻译：显示基板，包括其的液晶显示装置及其修复方法
公开(公告)号：US20110146066A1
公开(公告)日：2011-06-23
申请号：US13035473
申请日：2011-02-25
申请人： DUK SUNG KIM , Sung Haeng Cho
发明人： DUK SUNG KIM , Sung Haeng Cho
IPC分类号： H01R43/00
CPC分类号： G02F1/1309 , G02F1/1345 , G09G2330/08 , Y10T29/49117
摘要： A display substrate includes a signal line formed on a substrate, a connection pad receiving a driving signal from the signal line, at least one repair line formed along an outer periphery of the substrate, a first auxiliary repair line overlapping the signal line at a first position with an insulating layer disposed therebetween, a second auxiliary repair line overlapping the signal line at a second position with the insulating layer disposed therebetween, and a connection line connecting the second auxiliary repair line to the at least one repair line.
摘要翻译：显示基板包括形成在基板上的信号线，接收来自信号线的驱动信号的连接焊盘，沿着基板的外周形成的至少一个修复线，第一辅助修复线，与第一位于其间设置有绝缘层的第二辅助修复线，第二辅助修复线与位于其间的绝缘层的第二位置处的信号线重叠，以及将第二辅助修复线连接到至少一条修复线的连接线。

7. 发明申请

US20110057194A1 THIN FILM TRANSISTOR ARRAY PANEL 有权
标题翻译：薄膜晶体管阵列
公开(公告)号：US20110057194A1
公开(公告)日：2011-03-10
申请号：US12946953
申请日：2010-11-16
申请人： DONG-GYU KIM , Sung-Haeng Cho , Hyung-Jun Kim , Sung-Ryul Kim , Yong-Mo Choi
发明人： DONG-GYU KIM , Sung-Haeng Cho , Hyung-Jun Kim , Sung-Ryul Kim , Yong-Mo Choi
IPC分类号： H01L33/16
CPC分类号： G02F1/136213 , H01L27/1255
摘要： A thin film transistor array panel, in which a middle storage electrode and a storage electrode overlapping a drain electrode of a thin film transistor thereby forming a storage capacitance are formed. Accordingly, sufficient storage capacitance may be formed without a decrease of the aperture ratio and light transmittance of a liquid crystal display. Also, the capacitance may be sufficiently formed through the connecting member connected to a gate metal layer.
摘要翻译：一种薄膜晶体管阵列面板，其中形成中间存储电极和与薄膜晶体管的漏极重叠从而形成存储电容的存储电极。因此，可以形成足够的存储电容，而不会降低液晶显示器的开口率和透光率。此外，可以通过连接到栅极金属层的连接构件充分形成电容。

8. 发明申请

US20090174690A1 THIN FILM TRANSISTOR, DISPLAY DEVICE INCLUDING THE SAME, AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管，包括其的显示装置及其制造方法
公开(公告)号：US20090174690A1
公开(公告)日：2009-07-09
申请号：US12206327
申请日：2008-09-08
申请人： Jun-Ho SONG , Joo-Han KIM , Hyung-Jun KIM , Sung-Haeng CHO , Ki-Hun JEONG , Seung-Hwan SHIM
发明人： Jun-Ho SONG , Joo-Han KIM , Hyung-Jun KIM , Sung-Haeng CHO , Ki-Hun JEONG , Seung-Hwan SHIM
IPC分类号： G06F3/038
CPC分类号： H01L29/78669 , G09G3/3233 , G09G2300/0439 , G09G2300/0842 , H01L27/1229 , H01L27/1251 , H01L27/1288 , H01L27/3262 , H01L29/66765 , H01L29/78678 , H01L29/78696
摘要： A display device and a manufacturing method thereof, include a first thin film transistor including a first control electrode, a first semiconductor disposed on the first control electrode, and a first input electrode and a first output electrode opposite to each other on the first semiconductor; and a second thin film transistor including a second control electrode, a second semiconductor disposed on the second control electrode, and a second input electrode and a second output electrode opposite to each other on the second semiconductor, wherein the first semiconductor includes a first lower semiconductor including polysilicon, and a first upper semiconductor disposed on the first lower semiconductor, the first upper semiconductor including amorphous silicon.
摘要翻译：显示装置及其制造方法包括第一薄膜晶体管，其包括第一控制电极，设置在第一控制电极上的第一半导体，以及在第一半导体上彼此相对的第一输入电极和第一输出电极; 以及第二薄膜晶体管，其包括第二控制电极，设置在第二控制电极上的第二半导体，以及在第二半导体上彼此相对的第二输入电极和第二输出电极，其中第一半导体包括第一下半导体包括多晶硅，以及设置在所述第一下半导体上的第一上半导体，所述第一上半导体包括非晶硅。

9. 发明授权

US09252226B2 Thin film transistor array panel and manufacturing method thereof 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US09252226B2
公开(公告)日：2016-02-02
申请号：US13367061
申请日：2012-02-06
申请人： Do-Hyun Kim , Yoon Ho Khang , Dong-Hoon Lee , Sang Ho Park , Se Hwan Yu , Cheol Kyu Kim , Yong-Su Lee , Sung Haeng Cho , Chong Sup Chang , Dong Jo Kim , Jung Kyu Lee
发明人： Do-Hyun Kim , Yoon Ho Khang , Dong-Hoon Lee , Sang Ho Park , Se Hwan Yu , Cheol Kyu Kim , Yong-Su Lee , Sung Haeng Cho , Chong Sup Chang , Dong Jo Kim , Jung Kyu Lee
IPC分类号： H01L29/786 , H01L29/45 , H01L27/12
CPC分类号： H01L27/124 , H01L27/1225 , H01L27/1237 , H01L27/1262 , H01L27/127 , H01L27/1288 , H01L29/45 , H01L29/7869
摘要： Provided is a thin film transistor array panel. The thin film transistor array panel according to exemplary embodiments of the present invention includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.
摘要翻译：提供了一种薄膜晶体管阵列面板。根据本发明的示例性实施例的薄膜晶体管阵列面板包括：设置在基板上的栅极布线层; 设置在所述栅极布线层上的氧化物半导体层; 以及数据布线层，其设置在所述氧化物半导体层上，所述数据布线层包括包含铜的主布线层和设置在所述主布线层上并包括铜合金的覆盖层。

10. 发明申请

US20120228604A1 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20120228604A1
公开(公告)日：2012-09-13
申请号：US13400931
申请日：2012-02-21
申请人： Seung-Ha CHOI , Sung Haeng CHO , Woo Geun LEE , Kap Soo YOON , Sho Yeon KIM
发明人： Seung-Ha CHOI , Sung Haeng CHO , Woo Geun LEE , Kap Soo YOON , Sho Yeon KIM
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/1288
摘要： A thin film transistor array panel includes a gate electrode on an insulating substrate, a gate insulating layer on the gate electrode, a semiconductor on the gate insulating layer, a thin film transistor including a source electrode and a drain electrode on the oxide semiconductor, and a pixel electrode which is connected to the drain electrode. The semiconductor includes a first layer having a relatively low fluorine content and a second layer having a relatively high fluorine content. The second layer of the semiconductor is only between the first layer of the semiconductor and the source electrode, and between the first layer of the semiconductor and the drain electrode.
摘要翻译：薄膜晶体管阵列面板包括绝缘基板上的栅极电极，栅电极上的栅极绝缘层，栅极绝缘层上的半导体，氧化物半导体上包括源电极和漏电极的薄膜晶体管，以及连接到漏电极的像素电极。半导体包括具有相对低的氟含量的第一层和具有相对高的氟含量的第二层。半导体的第二层仅在半导体的第一层和源电极之间以及半导体的第一层和漏电极之间。

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