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1. 发明授权

US08816508B2 Integrated lighting apparatus having a control device and method of manufacturing the same 有权
标题翻译：具有控制装置的集成照明装置及其制造方法
公开(公告)号：US08816508B2
公开(公告)日：2014-08-26
申请号：US13186812
申请日：2011-07-20
申请人： Hsin-Mao Liu , Min-Hsun Hsieh , Tzer-Perng Chen , Meng-Yuan Hong , Cheng Nan Han , Tsung-Xian Lee , Ta-Cheng Hsu , Chih-Chiang Lu
发明人： Hsin-Mao Liu , Min-Hsun Hsieh , Tzer-Perng Chen , Meng-Yuan Hong , Cheng Nan Han , Tsung-Xian Lee , Ta-Cheng Hsu , Chih-Chiang Lu
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L33/62 , H01L25/167 , H01L27/153 , H01L2924/0002 , H01L2924/00
摘要： An integrated lighting apparatus includes at least a lighting device, a control device comprising an integrated circuit, and a connector that is used to electrically connect the lighting device and the control device. With the combination, the integrated circuit drives the lighting device in accordance with its various designed functionality, thus expands applications of the integrated lighting apparatus.
摘要翻译：集成照明装置至少包括照明装置，包括集成电路的控制装置和用于电连接照明装置和控制装置的连接器。通过组合，集成电路根据其各种设计的功能驱动照明装置，从而扩大了集成照明装置的应用。

2. 发明授权

US08791029B2 Stamp having nanoscale structure and applications therefore in light-emitting device 有权
标题翻译：因此具有纳米尺度结构和应用的印章在发光装置中
公开(公告)号：US08791029B2
公开(公告)日：2014-07-29
申请号：US12222548
申请日：2008-08-12
申请人： Chiu-Lin Yao , Ta-Cheng Hsu , Min-Hsun Hsieh
发明人： Chiu-Lin Yao , Ta-Cheng Hsu , Min-Hsun Hsieh
IPC分类号： H01L21/461
CPC分类号： H01L33/22 , H01L2933/0091
摘要： A stamp having a nanoscale structure and a manufacturing method thereof are disclosed. The stamp includes a substrate, a buffer layer, and a nanoscale stamp layer. The method comprises forming a buffer layer on the substrate, and forming a stamp layer having a nanoscale structure on the buffer layer.
摘要翻译：公开了具有纳米级结构的印模及其制造方法。印模包括基板，缓冲层和纳米尺度印模层。该方法包括在衬底上形成缓冲层，并在缓冲层上形成具有纳米尺度结构的印模层。

3. 发明申请

US20140103290A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20140103290A1
公开(公告)日：2014-04-17
申请号：US13653140
申请日：2012-10-16
申请人： Sheng-Horng YEN , Ta-Cheng Hsu , Yu-Jiun Shen
发明人： Sheng-Horng YEN , Ta-Cheng Hsu , Yu-Jiun Shen
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , H01L33/32
摘要： A light-emitting device comprises a first semiconductor layer; a second semiconductor layer; a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer; a first electron blocking layer formed between the first semiconductor layer and the light-emitting layer; and a second electron blocking layer formed between the second semiconductor layer and the light-emitting layer, wherein the thickness of the second electron blocking layer is not equal to that of the first electron blocking layer, and/or the band gap energy of the second electron blocking layer is not equal to that of the first electron blocking layer.
摘要翻译：发光器件包括第一半导体层; 第二半导体层; 形成在所述第一半导体层和所述第二半导体层之间的发光层; 形成在第一半导体层和发光层之间的第一电子阻挡层; 以及形成在第二半导体层和发光层之间的第二电子阻挡层，其中第二电子阻挡层的厚度不等于第一电子阻挡层的厚度和/或第二电子阻挡层的带隙能量电子阻挡层不等于第一电子阻挡层的电子阻挡层。

4. 发明授权

US08623682B2 Method for manufacturing high efficiency light-emitting diodes 有权
标题翻译：制造高效率发光二极管的方法
公开(公告)号：US08623682B2
公开(公告)日：2014-01-07
申请号：US13618774
申请日：2012-09-14
申请人： Chien-Kai Chung , Ta-Cheng Hsu , Jung-Min Hwang , Min-Hsun Hsieh , Ya-Lan Yang , De-Shan Kuo , Tsun-Kai Ko , Chien-Fu Shen , Ting-Chia Ko , Schang-Jing Hon
发明人： Chien-Kai Chung , Ta-Cheng Hsu , Jung-Min Hwang , Min-Hsun Hsieh , Ya-Lan Yang , De-Shan Kuo , Tsun-Kai Ko , Chien-Fu Shen , Ting-Chia Ko , Schang-Jing Hon
IPC分类号： H01L21/00
CPC分类号： H01L33/005 , H01L21/02057 , H01L21/3043 , H01L33/0095
摘要： A method of manufacturing a light-emitting device comprising the steps of cutting a substrate by a laser beam to form a cavity in the substrate and generate a by-product directly on the substrate by the cutting, and removing the by-product by a chemical solution containing an acid under a predetermined cleaning temperature.
摘要翻译：一种制造发光器件的方法，包括以下步骤：通过激光束切割衬底以在衬底中形成空腔，并通过切割直接在衬底上产生副产物，并通过化学物质除去副产物溶液在预定的清洁温度下含有酸。

5. 发明授权

US08502194B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08502194B2
公开(公告)日：2013-08-06
申请号：US13170360
申请日：2011-06-28
申请人： Chiu-Lin Yao , Ta-Cheng Hsu
发明人： Chiu-Lin Yao , Ta-Cheng Hsu
IPC分类号： H01L29/06
CPC分类号： H01L33/06 , H01L2933/0083
摘要： A light-emitting device and the method for making the same is disclosed. The light-emitting device is a semiconductor device, comprising a growth substrate, an n-type semiconductor layer, a quantum well active layer and a p-type semiconductor layer. It combines the holographic and the quantum well interdiffusion (QWI) to form a photonic crystal light-emitting device having a dielectric constant of two-dimensional periodic variation or a material composition of two-dimensional periodic variation in the quantum well active layer. The photonic crystal light-emitting devices can enhance the internal efficiency and light extraction efficiency.
摘要翻译：公开了一种发光器件及其制造方法。发光装置是包括生长衬底，n型半导体层，量子阱有源层和p型半导体层的半导体器件。它结合了全息和量子阱相互扩散（QWI）以形成具有二维周期性变化的介电常数或量子阱活性层中的二维周期性变化的材料组成的光子晶体发光器件。光子晶体发光器件可以提高内部效率和光提取效率。

6. 发明申请

US20120104440A1 OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：光电装置及其制造方法
公开(公告)号：US20120104440A1
公开(公告)日：2012-05-03
申请号：US13178323
申请日：2011-07-07
申请人： Wei-Chih PENG , Ta-Cheng Hsu , Yu-Jiun Shen , Ching-Fu Tsai
发明人： Wei-Chih PENG , Ta-Cheng Hsu , Yu-Jiun Shen , Ching-Fu Tsai
IPC分类号： H01L33/60 , H01L33/40
CPC分类号： H01L33/10 , H01L31/02327 , H01L31/0547 , H01L33/007 , H01L33/12 , H01L51/5268 , H01L51/5271 , H01L51/5275 , Y02E10/52
摘要： An optoelectronic device comprising, a substrate and a first transition stack formed on the substrate comprising a first transition layer formed on the substrate having a hollow component formed inside the first transition layer, a second transition layer formed on the first transition layer, and a reflector rod formed inside the second transition layer.
摘要翻译：一种光电子器件，包括：衬底和形成在衬底上的第一过渡堆叠，包括形成在衬底上的第一过渡层，其具有形成在第一过渡层内部的中空部件，形成在第一过渡层上的第二过渡层，以及反射器杆形成在第二过渡层内。

7. 发明授权

US08043878B2 Method for manufacturing high efficiency light-emitting diodes 有权
标题翻译：制造高效率发光二极管的方法
公开(公告)号：US08043878B2
公开(公告)日：2011-10-25
申请号：US12379561
申请日：2009-02-25
申请人： Ta-Cheng Hsu , Jung-Min Hwang , Min-Hsun Liu , Ya-Lan Yang , De-Shan Kuo , Tsun-Kai Ko , Chien-Fu Shen , Ting-Chia Ko , Schang-Jing Hon
发明人： Ta-Cheng Hsu , Jung-Min Hwang , Min-Hsun Liu , Ya-Lan Yang , De-Shan Kuo , Tsun-Kai Ko , Chien-Fu Shen , Ting-Chia Ko , Schang-Jing Hon
IPC分类号： H01L21/00
CPC分类号： H01L33/0095
摘要： A method for manufacturing a light-emitting device comprising the steps of cutting a light-emitting unit by a laser beam, and cleaning the light-emitting unit by an acid solution to remove by-products resulted from the laser cutting.
摘要翻译：一种发光装置的制造方法，其特征在于，包括以下步骤：用激光束切割发光单元，用酸溶液清洗发光单元，除去激光切割产生的副产物。

8. 发明申请

US20110024789A1 LIGHT-EMITTING DEVICE HAVING A ROUGHENED SURFACE WITH DIFFERENT TOPOGRAPHIES 有权
标题翻译：具有不同形貌的粗糙表面的发光装置
公开(公告)号：US20110024789A1
公开(公告)日：2011-02-03
申请号：US12905795
申请日：2010-10-15
申请人： Chiu-Lin Yao , Ta-Cheng Hsu
发明人： Chiu-Lin Yao , Ta-Cheng Hsu
IPC分类号： H01L33/22
CPC分类号： H01L33/22 , H01L33/387 , H01L2933/0016
摘要： This invention provides an optoelectronic semiconductor device having a rough surface and the manufacturing method thereof. The optoelectronic semiconductor device comprises a semiconductor stack having a rough surface and an electrode layer overlaying the semiconductor stack. The rough surface comprises a first region having a first topography and a second region having a second topography. The method comprises the steps of forming a semiconductor stack on a substrate, forming an electrode layer on the semiconductor stack, thermal treating the semiconductor stack, and wet etching the surface of the semiconductor stack to form a rough surface.
摘要翻译：本发明提供一种具有粗糙表面的光电半导体器件及其制造方法。光电子半导体器件包括具有粗糙表面的半导体叠层和覆盖半导体叠层的电极层。粗糙表面包括具有第一形貌的第一区域和具有第二形貌的第二区域。该方法包括以下步骤：在衬底上形成半导体堆叠，在半导体堆叠上形成电极层，热处理半导体堆叠，以及湿蚀刻半导体叠层的表面以形成粗糙表面。

9. 发明授权

US07811845B2 Method for manufacturing high efficiency light-emitting diodes 有权
标题翻译：制造高效率发光二极管的方法
公开(公告)号：US07811845B2
公开(公告)日：2010-10-12
申请号：US11602199
申请日：2006-11-21
申请人： Ta-Cheng Hsu , Jung-Min Hwang , Min-Hsun Hsieh , Ya-Lan Yang
发明人： Ta-Cheng Hsu , Jung-Min Hwang , Min-Hsun Hsieh , Ya-Lan Yang
IPC分类号： H01L21/00
CPC分类号： H01L33/0095
摘要： A method for manufacturing a light-emitting device comprising the steps of cutting a light-emitting unit by a laser beam, and cleaning the light-emitting unit by an acid solution to remove by-products resulted from the laser cutting.
摘要翻译：一种发光装置的制造方法，其特征在于，包括以下步骤：用激光束切割发光单元，用酸溶液清洗发光单元，除去激光切割所产生的副产物。

10. 发明申请

US20090309123A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20090309123A1
公开(公告)日：2009-12-17
申请号：US12486217
申请日：2009-06-17
申请人： Ta-Cheng HSU , Meng-Lun TSAI
发明人： Ta-Cheng HSU , Meng-Lun TSAI
IPC分类号： H01L33/00
CPC分类号： H01L33/02
摘要： This application discloses alight-emitting diode device, comprising an epitaxial structure having a light-emitting layer, a first-type conductivity layer, and a second-type conductivity layer wherein the thicknesses of the first-type conductivity confining layer is not equal to the second-type conductivity confining layer and the light-emitting layer is not overlapped with the portion of the epitaxial structure corresponding to the peak zone of the wave intensity distribution curve along the direction of the epitaxy growth.
摘要翻译：本申请公开了一种发光二极管器件，其包括具有发光层，第一类型导电层和第二导电层的外延结构，其中第一类型导电限制层的厚度不等于第二导电限制层和发光层与沿着外延生长方向的波强度分布曲线的峰值区域对应的外延结构的部分不重叠。

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