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1. 发明授权

US08374208B2 Quantum cascade laser 有权
标题翻译：量子级联激光器
公开(公告)号：US08374208B2
公开(公告)日：2013-02-12
申请号：US12919289
申请日：2009-02-24
申请人： Masamichi Yamanishi , Kazuue Fujita , Tadataka Edamura , Naota Akikusa
发明人： Masamichi Yamanishi , Kazuue Fujita , Tadataka Edamura , Naota Akikusa
IPC分类号： H01S5/00
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/3406 , H01S5/3418 , H01S5/34313
摘要： A quantum cascade laser is configured so as to include a semiconductor substrate and an active layer which is provided on the substrate and has a cascade structure including multistage-laminated unit laminate structures each including a quantum well emission layer and an injection layer. Moreover, the unit laminate structure has, in its subband level structure, an emission upper level, a lower level, and an injection level 4 of higher energy than the upper level, and light hν is generated by intersubband transition of electrons from the level to the level in the emission layer, and electrons after emission transition are injected into the injection level 4 of the subsequent stage via the injection layer. In addition, the emission layer includes two or more well layers, and the first well layer closest to the injection layer of the preceding stage is used as a well layer for injection level formation.
摘要翻译：量子级联激光器被配置为包括半导体衬底和设置在衬底上的有源层，并且具有包括多层叠单元层压结构的级联结构，每个层叠结构均包括量子阱发射层和注入层。此外，单元层叠结构在其子带层结构中具有比上层更高能量的发射上限，较低水平和注入水平4，以及光h＆ngr; 通过电子从发射层中的电平的子带间跃迁产生，并且发射转变后的电子经由注入层注入到后续级的注入级4中。此外，发射层包括两个或更多个阱层，并且最靠近前一级的注入层的第一阱层用作用于注入电平形成的阱层。

2. 发明申请

US20120134380A1 QUANTUM CASCADE LASER 有权
标题翻译：量子CASCADE激光
公开(公告)号：US20120134380A1
公开(公告)日：2012-05-31
申请号：US13297588
申请日：2011-11-16
申请人： Tadataka EDAMURA , Kazuue FUJITA , Tatsuo DOUGAKIUCHI , Masamichi YAMANISHI
发明人： Tadataka EDAMURA , Kazuue FUJITA , Tatsuo DOUGAKIUCHI , Masamichi YAMANISHI
IPC分类号： H01S5/34
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/0014 , H01S5/0287 , H01S5/1039
摘要： A quantum cascade laser is configured to include a semiconductor substrate, and an active layer that is provided on the substrate and has a cascade structure formed by alternately laminating emission layers and injection layers by multistage-laminating unit laminate structures each consisting of the quantum well emission layer and the injection layer, and generates light by intersubband transition in a quantum well structure. In a laser cavity structure for light with a predetermined wavelength generated in the active layer, a front reflection film with a reflectance of not less than 40% and not more than 99% for laser oscillation light is formed on the front end face that becomes a laser beam output surface, and a back reflection film with a reflectance higher than that of the front reflection film for the laser oscillation light is formed on the back end face.
摘要翻译：量子级联激光器被配置为包括半导体衬底和设置在衬底上的有源层，并且具有通过多级层压单元层叠结构交替层叠发射层和注入层而形成的级联结构，每个层叠结构由量子阱发射层和注入层，并通过量子阱结构中的子带间跃迁产生光。在用于有源层中产生的具有预定波长的光的激光腔结构中，在作为激光振荡光的前端面上形成具有不小于40％且不大于99％的反射率的前反射膜，激光束输出面以及反射率比用于激光振荡光的前反射膜的反射率高的背反射膜形成在后端面上。

3. 发明授权

US08068528B2 Quantum cascade laser 有权
标题翻译：量子级联激光器
公开(公告)号：US08068528B2
公开(公告)日：2011-11-29
申请号：US12523277
申请日：2007-06-06
申请人： Tadataka Edamura , Naota Akikusa , Kazuue Fujita , Atsushi Sugiyama , Takahide Ochiai
发明人： Tadataka Edamura , Naota Akikusa , Kazuue Fujita , Atsushi Sugiyama , Takahide Ochiai
IPC分类号： H01S5/00
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/3086 , H01S5/309 , H01S5/34313
摘要： A quantum cascade laser includes a semiconductor substrate, and an active layer which is provided on the semiconductor substrate, and has a cascade structure in which unit laminate structures 16 having quantum well emission layers 17 and injection layers 18 are laminated in multiple stages. Further, the quantum cascade laser is configured such that the unit laminate structure 16 has an emission upper level Lup, an emission lower level Llow, and a relaxation miniband MB including an energy level lower than the emission lower level in its subband level structure, and light is generated by an intersubband transition of electrons from the upper level to the lower level, and the electrons after the intersubband transition are relaxed from the lower level Llow to the miniband MB through LO phonon scattering, to be injected from the injection layer 18 to the latter stage emission layer via the miniband MB. Thereby, the quantum cascade laser which is capable of efficiently forming an inverted population in the quantum well emission layer, to improve its laser operation performance, is realized.
摘要翻译：量子级联激光器包括半导体衬底和设置在半导体衬底上的有源层，并且具有级联结构，其中具有量子阱发射层17和注入层18的单元叠层结构16多层叠。此外，量子级联激光器被配置为使得单元层压结构16具有包括其子带级结构中的低于发射较低电平的能级的发射上电平Lup，发射低电平Llow和弛豫微型MB，以及光通过从上层到下层的电子的子带间跃迁产生，并且子带间过渡之后的电子通过LO声子散射从低层Llow松弛到微型MB，从注入层18注入到后级发射层通过miniband MB。由此，可以实现能够在量子阱发射层中有效地形成反向群体的量子级联激光器，以提高其激光器的操作性能。

4. 发明申请

US20080069164A1 Quantum cascade laser 失效
标题翻译：量子级联激光器
公开(公告)号：US20080069164A1
公开(公告)日：2008-03-20
申请号：US11979294
申请日：2007-11-01
申请人： Tadataka Edamura , Naota Akikusa
发明人： Tadataka Edamura , Naota Akikusa
IPC分类号： H01S5/343
CPC分类号： B82Y20/00 , H01S5/32366 , H01S5/3402 , H01S5/34313
摘要： A quantum cascade laser 1, which generates infrared light or other light of a predetermined wavelength by making use of intersubband transitions in a quantum well structure, is arranged by forming, on a GaAs substrate 10, an AlGaAs/GaAs active layer 11 having a cascade structure in which quantum well light emitting layers and injection layers are laminated alternately. Also, at the GaAs substrate 10 side and the side opposite the GaAs substrate 10 side of active layer 11, is provided a waveguide structure, comprising waveguide core layers 12 and 14, each being formed of an n-type GaInNAs layer, which is a group III-V compound semiconductor that contains N (nitrogen), formed so as to be lattice matched with the GaAs substrate 10, and waveguide clad layers 13 and 15, each formed of an n++-type GaAs layer. A quantum cascade laser, with which the waveguide loss of generated light in the laser is reduced, is thereby realized.
摘要翻译：通过在GaAs衬底10上形成具有级联的AlGaAs / GaAs活性层11，通过在量子阱结构中利用子带间跃迁来产生预定波长的红外光或其他光的量子级联激光器1 量子阱发光层和注入层交替层叠的结构。此外，在GaAs衬底10侧和与有源层11的GaAs衬底10侧相对的一侧提供波导结构，其包括波导芯层12和14，每个波导芯层12和14由n型GaInNA层形成，其为形成为与GaAs衬底10晶格匹配的N（氮）的III-V族化合物半导体以及由n + GaAs层。从而实现了激光器中产生的光的波导损耗减小的量子级联激光器。

5. 发明申请

US20140241392A1 QUANTUM CASCADE LASER 有权
标题翻译：量子CASCADE激光
公开(公告)号：US20140241392A1
公开(公告)日：2014-08-28
申请号：US14342938
申请日：2012-07-04
申请人： Tadataka Edamura , Atsushi Sugiyama , Naota Akikusa
发明人： Tadataka Edamura , Atsushi Sugiyama , Naota Akikusa
IPC分类号： H01S5/34
CPC分类号： H01S5/3401 , B82Y20/00 , H01S5/12 , H01S5/124 , H01S5/3402
摘要： A quantum cascade laser 1 includes a semiconductor substrate, an active layer 15 that is disposed on the semiconductor substrate and has a cascade structure in which a unit layered structure 16 including a quantum well light emitting layer and an injection layer is stacked in multiples to alternately stack the quantum well light emitting layer and the injection layer, and a diffraction grating layer 20 disposed on the active layer.
摘要翻译：量子级联激光器1包括半导体衬底，设置在半导体衬底上并具有级联结构的有源层15，其中包括量子阱发光层和注入层的单元层状结构16以多个重叠的方式交替堆叠堆叠量子阱发光层和注入层，以及设置在有源层上的衍射光栅层20。

6. 发明授权

US08594142B2 Wavelength-tunable light source 有权
标题翻译：波长可调光源
公开(公告)号：US08594142B2
公开(公告)日：2013-11-26
申请号：US13369830
申请日：2012-02-09
申请人： Tatsuo Dougakiuchi , Kazuue Fujita , Tadataka Edamura , Naota Akikusa
发明人： Tatsuo Dougakiuchi , Kazuue Fujita , Tadataka Edamura , Naota Akikusa
IPC分类号： H01S3/10
CPC分类号： H01S5/3401 , B82Y20/00 , G02B5/1828 , G02B5/1861 , H01S3/08063 , H01S3/0815 , H01S3/1055 , H01S5/141
摘要： A wavelength-tunable light source includes a quantum cascade laser that emits light from a first end and a second end, an optical system that collimates the light emitted from the first end, a first reflecting section on which the light collimated by the optical system is made incident, and a second reflecting section that partially reflects the light emitted from the second end of the quantum cascade laser and transmits the remaining light. The first reflecting section includes a plurality of diffractive gratings whose diffractive properties are different from each other and whose lattice plane directions are variable, and the first reflecting section diffracts a light at a particular wavelength corresponding to the diffractive property and the lattice plane direction of the selected diffractive grating in the direction opposite to the incident direction.
摘要翻译：波长可调光源包括从第一端和第二端发射光的量子级联激光器，准直从第一端发射的光的光学系统，由光学系统准直的光在其上的第一反射部分以及第二反射部，其部分地反射从量子级联激光器的第二端发射的光并透射剩余的光。第一反射部分包括衍射特性彼此不同并且晶格面方向可变的多个衍射光栅，并且第一反射部分衍射具有与衍射特性对应的特定波长的光和晶格面方向选择的衍射光栅在与入射方向相反的方向上。

7. 发明申请

US20110286486A1 QUANTUM CASCADE LASER 有权
标题翻译：量子CASCADE激光
公开(公告)号：US20110286486A1
公开(公告)日：2011-11-24
申请号：US13110687
申请日：2011-05-18
申请人： Kazuue FUJITA , Tadataka Edamura , Tatsuo Dougakiuchi
发明人： Kazuue FUJITA , Tadataka Edamura , Tatsuo Dougakiuchi
IPC分类号： H01S5/34
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/22
摘要： A quantum cascade laser is configured to include a semiconductor substrate, and an active layer provided on the substrate and having a cascade structure formed by multistage-laminating unit laminate structures 16 each including an emission layer 17 and an injection layer 18. Further, the unit laminate structure 16 includes, in its subband level structure, a first emission upper level Lup1, a second emission upper level Lup2, and a plurality of emission lower levels Llow, one of the first and second upper levels is a level arising from a ground level in the first well layer, and the other is a level arising from an excitation level in the well layer except for the first well layer. Further, the energy interval between the first upper level and the second upper level is set to be smaller than the energy of an LO phonon, and the energy interval between the second upper level and a higher energy level Lh is set to be larger than the energy of an LO phonon. Accordingly, a quantum cascade laser capable of preferably obtaining emission in a broad wavelength range is realized.
摘要翻译：量子级联激光器被配置为包括半导体衬底和设置在衬底上的有源层，并且具有由包括发射层17和注入层18的多层叠层单元层压结构16形成的级联结构。此外，单元层叠结构16在其子带层结构中包括第一发射上限电平Lup1，第二发射上电平Lup2和多个发射较低电平Llow，第一和第二上电平之一是从地电平产生的电平在第一阱层中，另一个是由除了第一阱层之外的阱层中的激发电平产生的电平。此外，将第一上限电平和第二上限电平之间的能量间隔设置为小于LO声子的能量，并且将第二上限电平和较高能量电平Lh之间的能量间隔设置为大于 LO声子的能量。因此，可以实现能够优选在宽波长范围内获得发射的量子级联激光器。

8. 发明申请

US20110007768A1 QUANTUM CASCADE LASER 有权
标题翻译：量子CASCADE激光
公开(公告)号：US20110007768A1
公开(公告)日：2011-01-13
申请号：US12919289
申请日：2009-02-24
申请人： Masamichi Yamanishi , Kazuue Fujita , Tadataka Edamura , Naota Akikusa
发明人： Masamichi Yamanishi , Kazuue Fujita , Tadataka Edamura , Naota Akikusa
IPC分类号： H01S5/34
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/3406 , H01S5/3418 , H01S5/34313
摘要： A quantum cascade laser is configured so as to include a semiconductor substrate and an active layer which is provided on the substrate and has a cascade structure including multistage-laminated unit laminate structures 16 each including a quantum well emission layer 17 and an injection layer 18. Moreover, the unit laminate structure 16 has, in its subband level structure, an emission upper level 3, a lower level 2, and an injection level 4 of higher energy than the upper level 3, and light hv is generated by intersubband transition of electrons from the level 3 to the level 2 in the emission layer 17, and electrons after emission transition are injected into the injection level 4 of the subsequent stage via the injection layer 18. In addition, the emission layer 17 includes two or more well layers, and the first well layer closest to the injection layer of the preceding stage is used as a well layer for injection level formation. Accordingly, a quantum cascade laser capable of operation with high efficiency at high temperature can be realized.
摘要翻译：量子级联激光器被配置为包括半导体衬底和设置在衬底上的有源层，并且具有包括多层叠单元叠层结构16的级联结构，每个包括量子阱发射层17和注入层18。此外，单元叠层结构16在其子带层结构中具有比上层3更高能量的发射上层3，下层2和注入级4，并且通过电子的子带间转变产生光hv 从发光层17的3级到2级，发射转变后的电子经由注入层18注入后级的注入电平4.此外，发光层17包括两层以上的阱层，并且最靠近前一级的注入层的第一阱层用作注入层形成的阱层。因此，可以实现能够在高温下高效率地操作的量子级联激光器。

9. 发明申请

US20050067614A1 Semiconductor substrate 有权
标题翻译：半导体衬底
公开(公告)号：US20050067614A1
公开(公告)日：2005-03-31
申请号：US10947354
申请日：2004-09-23
申请人： Tadataka Edamura
发明人： Tadataka Edamura
IPC分类号： G02B5/30 , H01L21/20 , H01L21/203 , H01L29/04 , H01L29/06 , H01L29/12 , H01L29/20 , H01L31/0328
CPC分类号： B82Y20/00 , B82Y10/00 , H01L21/02395 , H01L21/02463 , H01L21/02549 , H01L21/0259 , H01L21/02631 , H01L21/02664 , H01L29/045 , H01L29/127 , H01L29/20
摘要： The present invention relates to a preferred semiconductor substrate for the production of devices. The semiconductor substrate is comprised of GaAs. Then, a plurality of quantum rings, which are composed of GaSb and have a substantially elliptical shape with an aspect ratio of 2 or more but 5 or less, are formed on a surface of the semiconductor substrate. These quantum rings extend along in the substantially same direction. In a case where a light beam is irradiated onto the surface of the semiconductor substrate, among the polarized components of the irradiated light, one polarized component parallel to the long-axis direction of the ellipse that is an extending direction of each quantum ring is reflected, while another polarized component parallel to the short-axis direction thereof is transmitted. That is, the semiconductor substrate reflects one polarized component, and transmits the other polarized component. A conventional semiconductor substrate having quantum rings of a substantially true circle shape with an aspect ratio of nearly 1 could not achieve the above separation of the polarized components. Therefore, the semiconductor substrate according to the present invention is preferred to the application to polarizing devices which was difficult in the conventional substrate.
摘要翻译：本发明涉及用于制造器件的优选半导体衬底。半导体衬底由GaAs组成。然后，在半导体衬底的表面上形成由GaSb构成并具有2倍以上且5以下的纵横比的大致椭圆形状的多个量子环。这些量子环沿着基本相同的方向延伸。在将光束照射到半导体衬底的表面上的情况下，在照射光的偏振分量中，与作为每个量子环的延伸方向的椭圆的长轴方向平行的一个偏振分量被反射而与其短轴方向平行的另一极化分量被传输。也就是说，半导体衬底反射一个偏振分量，并透射另一个偏振分量。具有纵横比接近1的基本上真圆形的量子环的常规半导体衬底无法实现上述偏振分量的分离。因此，根据本发明的半导体衬底对于在常规衬底中困难的偏振器件的应用是优选的。

10. 发明授权

US08958450B2 Quantum cascade laser 有权
标题翻译：量子级联激光器
公开(公告)号：US08958450B2
公开(公告)日：2015-02-17
申请号：US14342938
申请日：2012-07-04
申请人： Tadataka Edamura , Atsushi Sugiyama , Naota Akikusa
发明人： Tadataka Edamura , Atsushi Sugiyama , Naota Akikusa
IPC分类号： H01S5/00 , H01S5/34 , H01S5/12
CPC分类号： H01S5/3401 , B82Y20/00 , H01S5/12 , H01S5/124 , H01S5/3402
摘要： A quantum cascade laser 1 includes a semiconductor substrate, an active layer 15 that is disposed on the semiconductor substrate and has a cascade structure in which a unit layered structure 16 including a quantum well light emitting layer and an injection layer is stacked in multiples to alternately stack the quantum well light emitting layer and the injection layer, and a diffraction grating layer 20 disposed on the active layer.
摘要翻译：量子级联激光器1包括半导体衬底，设置在半导体衬底上并具有级联结构的有源层15，其中包括量子阱发光层和注入层的单元层状结构16以多个重叠的方式交替堆叠堆叠量子阱发光层和注入层，以及设置在有源层上的衍射光栅层20。

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