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1. 发明申请

US20140241392A1 QUANTUM CASCADE LASER 有权
标题翻译：量子CASCADE激光
公开(公告)号：US20140241392A1
公开(公告)日：2014-08-28
申请号：US14342938
申请日：2012-07-04
申请人： Tadataka Edamura , Atsushi Sugiyama , Naota Akikusa
发明人： Tadataka Edamura , Atsushi Sugiyama , Naota Akikusa
IPC分类号： H01S5/34
CPC分类号： H01S5/3401 , B82Y20/00 , H01S5/12 , H01S5/124 , H01S5/3402
摘要： A quantum cascade laser 1 includes a semiconductor substrate, an active layer 15 that is disposed on the semiconductor substrate and has a cascade structure in which a unit layered structure 16 including a quantum well light emitting layer and an injection layer is stacked in multiples to alternately stack the quantum well light emitting layer and the injection layer, and a diffraction grating layer 20 disposed on the active layer.
摘要翻译：量子级联激光器1包括半导体衬底，设置在半导体衬底上并具有级联结构的有源层15，其中包括量子阱发光层和注入层的单元层状结构16以多个重叠的方式交替堆叠堆叠量子阱发光层和注入层，以及设置在有源层上的衍射光栅层20。

2. 发明授权

US08594142B2 Wavelength-tunable light source 有权
标题翻译：波长可调光源
公开(公告)号：US08594142B2
公开(公告)日：2013-11-26
申请号：US13369830
申请日：2012-02-09
申请人： Tatsuo Dougakiuchi , Kazuue Fujita , Tadataka Edamura , Naota Akikusa
发明人： Tatsuo Dougakiuchi , Kazuue Fujita , Tadataka Edamura , Naota Akikusa
IPC分类号： H01S3/10
CPC分类号： H01S5/3401 , B82Y20/00 , G02B5/1828 , G02B5/1861 , H01S3/08063 , H01S3/0815 , H01S3/1055 , H01S5/141
摘要： A wavelength-tunable light source includes a quantum cascade laser that emits light from a first end and a second end, an optical system that collimates the light emitted from the first end, a first reflecting section on which the light collimated by the optical system is made incident, and a second reflecting section that partially reflects the light emitted from the second end of the quantum cascade laser and transmits the remaining light. The first reflecting section includes a plurality of diffractive gratings whose diffractive properties are different from each other and whose lattice plane directions are variable, and the first reflecting section diffracts a light at a particular wavelength corresponding to the diffractive property and the lattice plane direction of the selected diffractive grating in the direction opposite to the incident direction.
摘要翻译：波长可调光源包括从第一端和第二端发射光的量子级联激光器，准直从第一端发射的光的光学系统，由光学系统准直的光在其上的第一反射部分以及第二反射部，其部分地反射从量子级联激光器的第二端发射的光并透射剩余的光。第一反射部分包括衍射特性彼此不同并且晶格面方向可变的多个衍射光栅，并且第一反射部分衍射具有与衍射特性对应的特定波长的光和晶格面方向选择的衍射光栅在与入射方向相反的方向上。

3. 发明申请

US20110007768A1 QUANTUM CASCADE LASER 有权
标题翻译：量子CASCADE激光
公开(公告)号：US20110007768A1
公开(公告)日：2011-01-13
申请号：US12919289
申请日：2009-02-24
申请人： Masamichi Yamanishi , Kazuue Fujita , Tadataka Edamura , Naota Akikusa
发明人： Masamichi Yamanishi , Kazuue Fujita , Tadataka Edamura , Naota Akikusa
IPC分类号： H01S5/34
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/3406 , H01S5/3418 , H01S5/34313
摘要： A quantum cascade laser is configured so as to include a semiconductor substrate and an active layer which is provided on the substrate and has a cascade structure including multistage-laminated unit laminate structures 16 each including a quantum well emission layer 17 and an injection layer 18. Moreover, the unit laminate structure 16 has, in its subband level structure, an emission upper level 3, a lower level 2, and an injection level 4 of higher energy than the upper level 3, and light hv is generated by intersubband transition of electrons from the level 3 to the level 2 in the emission layer 17, and electrons after emission transition are injected into the injection level 4 of the subsequent stage via the injection layer 18. In addition, the emission layer 17 includes two or more well layers, and the first well layer closest to the injection layer of the preceding stage is used as a well layer for injection level formation. Accordingly, a quantum cascade laser capable of operation with high efficiency at high temperature can be realized.
摘要翻译：量子级联激光器被配置为包括半导体衬底和设置在衬底上的有源层，并且具有包括多层叠单元叠层结构16的级联结构，每个包括量子阱发射层17和注入层18。此外，单元叠层结构16在其子带层结构中具有比上层3更高能量的发射上层3，下层2和注入级4，并且通过电子的子带间转变产生光hv 从发光层17的3级到2级，发射转变后的电子经由注入层18注入后级的注入电平4.此外，发光层17包括两层以上的阱层，并且最靠近前一级的注入层的第一阱层用作注入层形成的阱层。因此，可以实现能够在高温下高效率地操作的量子级联激光器。

4. 发明授权

US08374208B2 Quantum cascade laser 有权
标题翻译：量子级联激光器
公开(公告)号：US08374208B2
公开(公告)日：2013-02-12
申请号：US12919289
申请日：2009-02-24
申请人： Masamichi Yamanishi , Kazuue Fujita , Tadataka Edamura , Naota Akikusa
发明人： Masamichi Yamanishi , Kazuue Fujita , Tadataka Edamura , Naota Akikusa
IPC分类号： H01S5/00
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/3406 , H01S5/3418 , H01S5/34313
摘要： A quantum cascade laser is configured so as to include a semiconductor substrate and an active layer which is provided on the substrate and has a cascade structure including multistage-laminated unit laminate structures each including a quantum well emission layer and an injection layer. Moreover, the unit laminate structure has, in its subband level structure, an emission upper level, a lower level, and an injection level 4 of higher energy than the upper level, and light hν is generated by intersubband transition of electrons from the level to the level in the emission layer, and electrons after emission transition are injected into the injection level 4 of the subsequent stage via the injection layer. In addition, the emission layer includes two or more well layers, and the first well layer closest to the injection layer of the preceding stage is used as a well layer for injection level formation.
摘要翻译：量子级联激光器被配置为包括半导体衬底和设置在衬底上的有源层，并且具有包括多层叠单元层压结构的级联结构，每个层叠结构均包括量子阱发射层和注入层。此外，单元层叠结构在其子带层结构中具有比上层更高能量的发射上限，较低水平和注入水平4，以及光h＆ngr; 通过电子从发射层中的电平的子带间跃迁产生，并且发射转变后的电子经由注入层注入到后续级的注入级4中。此外，发射层包括两个或更多个阱层，并且最靠近前一级的注入层的第一阱层用作用于注入电平形成的阱层。

5. 发明授权

US08068528B2 Quantum cascade laser 有权
标题翻译：量子级联激光器
公开(公告)号：US08068528B2
公开(公告)日：2011-11-29
申请号：US12523277
申请日：2007-06-06
申请人： Tadataka Edamura , Naota Akikusa , Kazuue Fujita , Atsushi Sugiyama , Takahide Ochiai
发明人： Tadataka Edamura , Naota Akikusa , Kazuue Fujita , Atsushi Sugiyama , Takahide Ochiai
IPC分类号： H01S5/00
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/3086 , H01S5/309 , H01S5/34313
摘要： A quantum cascade laser includes a semiconductor substrate, and an active layer which is provided on the semiconductor substrate, and has a cascade structure in which unit laminate structures 16 having quantum well emission layers 17 and injection layers 18 are laminated in multiple stages. Further, the quantum cascade laser is configured such that the unit laminate structure 16 has an emission upper level Lup, an emission lower level Llow, and a relaxation miniband MB including an energy level lower than the emission lower level in its subband level structure, and light is generated by an intersubband transition of electrons from the upper level to the lower level, and the electrons after the intersubband transition are relaxed from the lower level Llow to the miniband MB through LO phonon scattering, to be injected from the injection layer 18 to the latter stage emission layer via the miniband MB. Thereby, the quantum cascade laser which is capable of efficiently forming an inverted population in the quantum well emission layer, to improve its laser operation performance, is realized.
摘要翻译：量子级联激光器包括半导体衬底和设置在半导体衬底上的有源层，并且具有级联结构，其中具有量子阱发射层17和注入层18的单元叠层结构16多层叠。此外，量子级联激光器被配置为使得单元层压结构16具有包括其子带级结构中的低于发射较低电平的能级的发射上电平Lup，发射低电平Llow和弛豫微型MB，以及光通过从上层到下层的电子的子带间跃迁产生，并且子带间过渡之后的电子通过LO声子散射从低层Llow松弛到微型MB，从注入层18注入到后级发射层通过miniband MB。由此，可以实现能够在量子阱发射层中有效地形成反向群体的量子级联激光器，以提高其激光器的操作性能。

6. 发明申请

US20080069164A1 Quantum cascade laser 失效
标题翻译：量子级联激光器
公开(公告)号：US20080069164A1
公开(公告)日：2008-03-20
申请号：US11979294
申请日：2007-11-01
申请人： Tadataka Edamura , Naota Akikusa
发明人： Tadataka Edamura , Naota Akikusa
IPC分类号： H01S5/343
CPC分类号： B82Y20/00 , H01S5/32366 , H01S5/3402 , H01S5/34313
摘要： A quantum cascade laser 1, which generates infrared light or other light of a predetermined wavelength by making use of intersubband transitions in a quantum well structure, is arranged by forming, on a GaAs substrate 10, an AlGaAs/GaAs active layer 11 having a cascade structure in which quantum well light emitting layers and injection layers are laminated alternately. Also, at the GaAs substrate 10 side and the side opposite the GaAs substrate 10 side of active layer 11, is provided a waveguide structure, comprising waveguide core layers 12 and 14, each being formed of an n-type GaInNAs layer, which is a group III-V compound semiconductor that contains N (nitrogen), formed so as to be lattice matched with the GaAs substrate 10, and waveguide clad layers 13 and 15, each formed of an n++-type GaAs layer. A quantum cascade laser, with which the waveguide loss of generated light in the laser is reduced, is thereby realized.
摘要翻译：通过在GaAs衬底10上形成具有级联的AlGaAs / GaAs活性层11，通过在量子阱结构中利用子带间跃迁来产生预定波长的红外光或其他光的量子级联激光器1 量子阱发光层和注入层交替层叠的结构。此外，在GaAs衬底10侧和与有源层11的GaAs衬底10侧相对的一侧提供波导结构，其包括波导芯层12和14，每个波导芯层12和14由n型GaInNA层形成，其为形成为与GaAs衬底10晶格匹配的N（氮）的III-V族化合物半导体以及由n + GaAs层。从而实现了激光器中产生的光的波导损耗减小的量子级联激光器。

7. 发明授权

US10166086B2 Dental therapy apparatus 有权
公开(公告)号：US10166086B2
公开(公告)日：2019-01-01
申请号：US14110837
申请日：2012-05-17
申请人： Kunio Awazu , Katsunori Ishii , Naota Akikusa , Tadataka Edamura , Hirofumi Kan
发明人： Kunio Awazu , Katsunori Ishii , Naota Akikusa , Tadataka Edamura , Hirofumi Kan
IPC分类号： A61C1/00 , A61C3/02
摘要： A dental therapy apparatus which enables a dental therapy more surely and less invasively is provided. A dental therapy apparatus (10A) comprises a laser light source (11) emitting laser light (L) having a wavelength within a wavelength region of 5.7 to 6.6 μm; a controller (12) pulse-driving the laser light source and controlling at least one of pulse width and repetition frequency of pulsed laser light emitted from the laser light source; and an irradiation optical system for irradiating a tooth (20) including a carious part (21) with the light emitted from the laser light source. In this dental therapy apparatus, the controller controls at least one of the pulse width and repetition frequency of the pulsed light, so as to selectively cut the carious part (21).

8. 发明授权

US09620921B2 Quantum cascade laser manufacturing method 有权
公开(公告)号：US09620921B2
公开(公告)日：2017-04-11
申请号：US14342895
申请日：2012-07-04
申请人： Atsushi Sugiyama , Naota Akikusa , Tadataka Edamura
发明人： Atsushi Sugiyama , Naota Akikusa , Tadataka Edamura
IPC分类号： H01S5/34 , H01S3/08 , B82Y10/00 , B82Y20/00 , B82Y40/00 , H01S5/12 , B29C33/42 , G03F7/00
CPC分类号： H01S3/08009 , B29C33/424 , B29C2033/426 , B82Y10/00 , B82Y20/00 , B82Y40/00 , G03F7/0002 , H01S5/124 , H01S5/3401 , H01S5/3402
摘要： A quantum cascade laser manufacturing method includes: a step of pressing a mother stamper against a resin film having flexibility to make a resin stamper 201 having a second groove pattern P2; a step of making a wafer with an active layer formed on a semiconductor substrate; a step of forming a resist film 304 on a surface on the active layer side of the wafer; a step of pressing the resin stamper against the resist film 304 by air pressure to form a third groove pattern P3 on the resist film 304; and a step of etching the wafer with the resist film 304 serving as a mask to form a diffraction grating on a surface of the wafer.

9. 发明申请

US20130056565A1 FINE-PARTICLE DISPERSION LIQUID MANUFACTURING METHOD AND FINE-PARTICLE DISPERSION LIQUID MANUFACTURING APPARATUS 有权
标题翻译：微粒分散液体制造方法和微粒分散液体制造装置
公开(公告)号：US20130056565A1
公开(公告)日：2013-03-07
申请号：US13583361
申请日：2011-03-10
申请人： Tokio Takagi , Mitsuo Hiramatsu , Gen Takebe , Naota Akikusa , Kazuue Fujita , Tatsuo Dougakiuchi
发明人： Tokio Takagi , Mitsuo Hiramatsu , Gen Takebe , Naota Akikusa , Kazuue Fujita , Tatsuo Dougakiuchi
IPC分类号： B01J13/00
CPC分类号： B01J19/121 , A61K9/5138 , B01J19/008 , B01J19/128 , B02C19/18 , B02C23/06 , B02C2019/183
摘要： A microparticle dispersion liquid manufacturing apparatus 10 includes a controller 11, a light source 12, an irradiation optical system 13, and a container 14. A solid object 1 is contained in and a solvent 2 is injected into an interior of the container 14 to enable attainment of a state where the solid object 1 is in contact with the solvent 2. The light source 12 repeatedly outputs pulsed light. By repeatedly irradiating the solvent 2 with the pulsed light from the light source 12, expansion and contraction of the solvent 2 is made to occur repeatedly at the irradiated portion, thereby generating a pressure wave in the solvent 2, and the pressure wave is made to act on the solid object 1 to finely pulverize the solid object 1 and thereby manufacture a microparticle dispersion liquid in which microparticles are dispersed in the solvent. A microparticle dispersion liquid manufacturing method and manufacturing apparatus are thereby realized by which both suppression of impurity formation and an increase in efficiency of microparticle formation can be achieved readily.
摘要翻译：微粒分散液制造装置10包括控制器11，光源12，照射光学系统13和容器14.固体物体1被容纳在溶剂2中并注入到容器14的内部，以使得能够实现固体1与溶剂2接触的状态。光源12重复输出脉冲光。通过用来自光源12的脉冲光反复照射溶剂2，使溶剂2的膨胀和收缩在照射部分重复出现，从而在溶剂2中产生压力波，并使压力波变为作用在固体物体1上以细粉碎固体物体1，从而制造其中微粒分散在溶剂中的微粒分散液。由此，可以容易地实现微粒分散液的制造方法及制造装置，能够容易地实现抑制杂质形成和微粒形成效率的提高。

10. 发明授权

US08330140B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US08330140B2
公开(公告)日：2012-12-11
申请号：US12843196
申请日：2010-07-26
申请人： Tadataka Edamura , Kazuue Fujita , Akira Higuchi , Naota Akikusa , Masamichi Yamanishi
发明人： Tadataka Edamura , Kazuue Fujita , Akira Higuchi , Naota Akikusa , Masamichi Yamanishi
IPC分类号： H01L31/00
CPC分类号： H01L33/06 , B82Y20/00 , H01S5/3402
摘要： A semiconductor light emitting device including a semiconductor substrate and an active layer which is formed on the substrate and has a cascade structure formed by multistage-laminating unit laminate structures 16 each including an emission layer 17 and an injection layer 18 is configured. The unit laminate structure 16 has a first upper level L3, a second upper level L4, and a lower level L2 in the emission layer 17, and an injection level L1 in the injection layer 18, an energy interval between the levels L3 and L4 is set to be smaller than the energy of an LO phonon, the layer thickness of the exit barrier layer is set in a range not less than 70% and not more than 150% of the layer thickness of the injection barrier layer, light is generated by emission transition in the emission layer 17, and electrons after the emission transition are injected from the level L2 into the level L4 of the emission layer of a subsequent stage via the level L1. Accordingly, a semiconductor light emitting device using polaritons, capable of performing a light emitting operation by current injection, is realized.
摘要翻译：构成半导体发光器件，其包括半导体衬底和有源层，该有源层形成在衬底上并且具有由包括发射层17和注入层18的多层叠层单元叠层结构16形成的级联结构。单元层叠结构16在发光层17中具有第一上层L3，第二上层L4和下层L2，以及注入层18中的注入层L1，层L3和L4之间的能量间隔为设定为小于LO声子的能量，出射阻挡层的层厚度设定在不小于注入阻挡层的层厚度的70％且不大于150％的范围内，光由发射层17中的发射跃迁以及发射跃迁之后的电子经由电平L1从电平L2注入到后级的发射层的电平L4。因此，实现了能够通过电流注入进行发光操作的使用极化子的半导体发光器件。

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