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1. 发明授权

US08374208B2 Quantum cascade laser 有权
标题翻译：量子级联激光器
公开(公告)号：US08374208B2
公开(公告)日：2013-02-12
申请号：US12919289
申请日：2009-02-24
申请人： Masamichi Yamanishi , Kazuue Fujita , Tadataka Edamura , Naota Akikusa
发明人： Masamichi Yamanishi , Kazuue Fujita , Tadataka Edamura , Naota Akikusa
IPC分类号： H01S5/00
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/3406 , H01S5/3418 , H01S5/34313
摘要： A quantum cascade laser is configured so as to include a semiconductor substrate and an active layer which is provided on the substrate and has a cascade structure including multistage-laminated unit laminate structures each including a quantum well emission layer and an injection layer. Moreover, the unit laminate structure has, in its subband level structure, an emission upper level, a lower level, and an injection level 4 of higher energy than the upper level, and light hν is generated by intersubband transition of electrons from the level to the level in the emission layer, and electrons after emission transition are injected into the injection level 4 of the subsequent stage via the injection layer. In addition, the emission layer includes two or more well layers, and the first well layer closest to the injection layer of the preceding stage is used as a well layer for injection level formation.
摘要翻译：量子级联激光器被配置为包括半导体衬底和设置在衬底上的有源层，并且具有包括多层叠单元层压结构的级联结构，每个层叠结构均包括量子阱发射层和注入层。此外，单元层叠结构在其子带层结构中具有比上层更高能量的发射上限，较低水平和注入水平4，以及光h＆ngr; 通过电子从发射层中的电平的子带间跃迁产生，并且发射转变后的电子经由注入层注入到后续级的注入级4中。此外，发射层包括两个或更多个阱层，并且最靠近前一级的注入层的第一阱层用作用于注入电平形成的阱层。

2. 发明申请

US20120134380A1 QUANTUM CASCADE LASER 有权
标题翻译：量子CASCADE激光
公开(公告)号：US20120134380A1
公开(公告)日：2012-05-31
申请号：US13297588
申请日：2011-11-16
申请人： Tadataka EDAMURA , Kazuue FUJITA , Tatsuo DOUGAKIUCHI , Masamichi YAMANISHI
发明人： Tadataka EDAMURA , Kazuue FUJITA , Tatsuo DOUGAKIUCHI , Masamichi YAMANISHI
IPC分类号： H01S5/34
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/0014 , H01S5/0287 , H01S5/1039
摘要： A quantum cascade laser is configured to include a semiconductor substrate, and an active layer that is provided on the substrate and has a cascade structure formed by alternately laminating emission layers and injection layers by multistage-laminating unit laminate structures each consisting of the quantum well emission layer and the injection layer, and generates light by intersubband transition in a quantum well structure. In a laser cavity structure for light with a predetermined wavelength generated in the active layer, a front reflection film with a reflectance of not less than 40% and not more than 99% for laser oscillation light is formed on the front end face that becomes a laser beam output surface, and a back reflection film with a reflectance higher than that of the front reflection film for the laser oscillation light is formed on the back end face.
摘要翻译：量子级联激光器被配置为包括半导体衬底和设置在衬底上的有源层，并且具有通过多级层压单元层叠结构交替层叠发射层和注入层而形成的级联结构，每个层叠结构由量子阱发射层和注入层，并通过量子阱结构中的子带间跃迁产生光。在用于有源层中产生的具有预定波长的光的激光腔结构中，在作为激光振荡光的前端面上形成具有不小于40％且不大于99％的反射率的前反射膜，激光束输出面以及反射率比用于激光振荡光的前反射膜的反射率高的背反射膜形成在后端面上。

3. 发明授权

US4845535A Light emitting semiconductor device 失效
标题翻译：发光半导体器件
公开(公告)号：US4845535A
公开(公告)日：1989-07-04
申请号：US147553
申请日：1988-01-19
申请人： Masamichi Yamanishi , Ikuo Suemune , Yasuo Kan
发明人： Masamichi Yamanishi , Ikuo Suemune , Yasuo Kan
IPC分类号： H01L27/15 , H01L33/14 , H01L33/28 , H01L33/30 , H01L33/40 , H01S5/00 , H01S5/042 , H01S5/062 , H01S5/223 , H01S5/32 , H01S5/34
CPC分类号： H01L33/0041 , H01L33/0025 , H01S5/06203 , H01S5/06216 , H01S5/223 , H01S5/3222 , H01S5/3428
摘要： The disclosed light emitting semiconductor device has an n-type (or p-type) base region sandwiched by a p-type (or n-type) emitter region and a p-type (or n-type) collector region. An injecting voltage source is connected across the emittter region and base region so as to apply a constant voltage therebetween, while a control voltage source is connected across the emitter region and the collector region so as to selectively apply a reverse bias to a base-collector junction for controlling recombination of carriers injected to the base region. The control voltage source produces such non-emitting period voltage and emitting period voltage that carriers injected during the non-emitting period voltage are captured in the base region while the carriers thus captured are allowed to recombine during the emitting period voltage.

4. 发明授权

US08330140B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US08330140B2
公开(公告)日：2012-12-11
申请号：US12843196
申请日：2010-07-26
申请人： Tadataka Edamura , Kazuue Fujita , Akira Higuchi , Naota Akikusa , Masamichi Yamanishi
发明人： Tadataka Edamura , Kazuue Fujita , Akira Higuchi , Naota Akikusa , Masamichi Yamanishi
IPC分类号： H01L31/00
CPC分类号： H01L33/06 , B82Y20/00 , H01S5/3402
摘要： A semiconductor light emitting device including a semiconductor substrate and an active layer which is formed on the substrate and has a cascade structure formed by multistage-laminating unit laminate structures 16 each including an emission layer 17 and an injection layer 18 is configured. The unit laminate structure 16 has a first upper level L3, a second upper level L4, and a lower level L2 in the emission layer 17, and an injection level L1 in the injection layer 18, an energy interval between the levels L3 and L4 is set to be smaller than the energy of an LO phonon, the layer thickness of the exit barrier layer is set in a range not less than 70% and not more than 150% of the layer thickness of the injection barrier layer, light is generated by emission transition in the emission layer 17, and electrons after the emission transition are injected from the level L2 into the level L4 of the emission layer of a subsequent stage via the level L1. Accordingly, a semiconductor light emitting device using polaritons, capable of performing a light emitting operation by current injection, is realized.
摘要翻译：构成半导体发光器件，其包括半导体衬底和有源层，该有源层形成在衬底上并且具有由包括发射层17和注入层18的多层叠层单元叠层结构16形成的级联结构。单元层叠结构16在发光层17中具有第一上层L3，第二上层L4和下层L2，以及注入层18中的注入层L1，层L3和L4之间的能量间隔为设定为小于LO声子的能量，出射阻挡层的层厚度设定在不小于注入阻挡层的层厚度的70％且不大于150％的范围内，光由发射层17中的发射跃迁以及发射跃迁之后的电子经由电平L1从电平L2注入到后级的发射层的电平L4。因此，实现了能够通过电流注入进行发光操作的使用极化子的半导体发光器件。

5. 发明授权

US5173955A Magnetooptic device and its driving method 失效
标题翻译：磁光装置及其驱动方法
公开(公告)号：US5173955A
公开(公告)日：1992-12-22
申请号：US658328
申请日：1991-02-20
申请人： Masamichi Yamanishi , Hitoshi Oda
发明人： Masamichi Yamanishi , Hitoshi Oda
IPC分类号： G02F1/095 , G11B11/105 , G11C7/00 , H01S5/026
CPC分类号： G11C7/005 , G02F1/0955 , G11B11/10584 , G11B11/10589 , H01S5/026
摘要： There is provided a magnetooptic device including a substrate; a semiconductor layer having a quantum well structure formed on the substrate, in which the semiconductor layer is formed by alternately laminating a well layer and a barrier layer and at least the barrier layer in those layers contains magnetic ions; and electrodes to apply an electric field to the semiconductor layer. A light which was polarized in a predetermined direction is input to the semiconductor layer. A magnetic field is applied to the semiconductor layer. An electric field is applied to the semiconductor layer by the electrodes. The light which was transmitted in the semiconductor layer is extracted. A degree of leakage of a wave function of the carrier in the well layer into the barrier layer changes. An effective magnetic field which a carrier spin feels changes by an exchange interaction between the carrier spin and a magnetic moment associated with the magnetic ions. Thus, a degree of magnetooptic effect which is given to the transmission light changes. The degree of manetooptic effect can be controlled by the applied electric field. The magnetooptic device is preferably used as an optical modulator or an optical isolator in the field of optical communications or optical memories.
摘要翻译：提供了包括基板的磁光装置; 在衬底上形成有量子阱结构的半导体层，其中半导体层通过交替层叠阱层和阻挡层而形成，并且至少这些层中的势垒层包含磁离子; 以及向半导体层施加电场的电极。沿预定方向极化的光被输入到半导体层。对半导体层施加磁场。通过电极将电场施加到半导体层。提取在半导体层中透过的光。阱层中的载流子的波函数的泄漏程度变化。通过载流子自旋与与磁离子相关的磁矩之间的交换相互作用，载流子自旋感觉到的有效磁场变化。因此，给予透射光的磁光效应程度改变。电磁效应的程度可以通过施加的电场来控制。磁光装置优选地用作光通信或光存储器领域中的光调制器或光隔离器。

6. 发明授权

US08699538B2 Quantum cascade laser 有权
标题翻译：量子级联激光器
公开(公告)号：US08699538B2
公开(公告)日：2014-04-15
申请号：US13297588
申请日：2011-11-16
申请人： Tadataka Edamura , Kazuue Fujita , Tatsuo Dougakiuchi , Masamichi Yamanishi
发明人： Tadataka Edamura , Kazuue Fujita , Tatsuo Dougakiuchi , Masamichi Yamanishi
IPC分类号： H01S5/00
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/0014 , H01S5/0287 , H01S5/1039
摘要： A quantum cascade laser is configured to include a semiconductor substrate, and an active layer that is provided on the substrate and has a cascade structure formed by alternately laminating emission layers and injection layers by multistage-laminating unit laminate structures each consisting of the quantum well emission layer and the injection layer, and generates light by intersubband transition in a quantum well structure. In a laser cavity structure for light with a predetermined wavelength generated in the active layer, a front reflection film with a reflectance of not less than 40% and not more than 99% for laser oscillation light is formed on the front end face that becomes a laser beam output surface, and a back reflection film with a reflectance higher than that of the front reflection film for the laser oscillation light is formed on the back end face.
摘要翻译：量子级联激光器被配置为包括半导体衬底和设置在衬底上的有源层，并且具有通过多级层压单元层叠结构交替层叠发射层和注入层而形成的级联结构，每个层叠结构由量子阱发射层和注入层，并通过量子阱结构中的子带间跃迁产生光。在用于有源层中产生的具有预定波长的光的激光腔结构中，在作为激光振荡光的前端面上形成具有不小于40％且不大于99％的反射率的前反射膜，激光束输出面以及反射率比用于激光振荡光的前反射膜的反射率高的背反射膜形成在后端面上。

7. 发明授权

US07843981B2 Quantum cascade laser 有权
标题翻译：量子级联激光器
公开(公告)号：US07843981B2
公开(公告)日：2010-11-30
申请号：US11896115
申请日：2007-08-29
申请人： Masamichi Yamanishi , Tadataka Edamura , Naota Akikusa , Kazuue Fujita
发明人： Masamichi Yamanishi , Tadataka Edamura , Naota Akikusa , Kazuue Fujita
IPC分类号： H01S5/00
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/22 , H01S5/3415 , H01S5/3432 , H01S2302/02
摘要： A quantum cascade laser is composed of a semiconductor substrate, and an active layer provided on the semiconductor substrate and having a cascade structure formed by multistage-laminating unit laminate structures 16 each of which includes a quantum well light emitting layer 17 and an injection layer 18. The unit laminate structure 16 has, in its subband level structure, an emission upper level 3, an emission lower level 2, and an injection level 4 as an energy level higher than the emission upper level 3, and light hν is generated by means of intersubband transition of electrons from the level 3 to the level 2 in the light emitting layer 17, and electrons through the intersubband transition are injected into the injection level in a unit laminate structure of the subsequent stage via the injection layer 18, and from this injection level, electrons are supplied to the emission upper level. Thereby, a quantum cascade laser which realizes operation with a high output at a high temperature is realized.
摘要翻译：量子级联激光器由半导体衬底和设置在半导体衬底上的有源层组成，并具有通过多级层叠单元层叠结构16形成的级联结构，每个层叠结构16包括量子阱发光层17和注入层18 单元层叠结构16在其子带层结构中具有作为高于排放上层3的能级的发射上限3，排放下限2和喷射水平4，以及光h＆ngr; 通过在发光层17中从3级到2级的电子的子带间过渡产生，并且通过子带间跃迁的电子经由注入层18在后级的单元层叠结构中注入注入水平，并且从该注入水平，电子被提供给发射上限。从而实现了在高温下实现高输出的操作的量子级联激光器。

8. 发明申请

US20080013878A1 Waveguide structure and optical device 有权
标题翻译：波导结构和光学器件
公开(公告)号：US20080013878A1
公开(公告)日：2008-01-17
申请号：US11822542
申请日：2007-07-06
申请人： Hiroyasu Fujiwara , Masamichi Yamanishi , Akira Higuchi , Kazutoshi Nakajima
发明人： Hiroyasu Fujiwara , Masamichi Yamanishi , Akira Higuchi , Kazutoshi Nakajima
IPC分类号： G02B6/10
CPC分类号： G02B6/1226 , B82Y20/00
摘要： There is disclosed a waveguide structure that propagates surface plasmon waves, comprising: a quantum well structure, disposed on a semiconductor substrate; wherein the quantum well structure has a quantum well layer, in turn having an intersecting region that intersects a hypothetical plane substantially orthogonal to an alignment direction of the quantum well structure with respect to the semiconductor substrate, and a real part of a dielectric constant of the quantum well structure is negative for THz waves of a predetermined wavelength.
摘要翻译：公开了传播表面等离子体波的波导结构，包括：量子阱结构，设置在半导体衬底上; 其中所述量子阱结构具有量子阱层，其又具有与基本上正交于所述量子阱结构相对于所述半导体衬底的取向方向的假想平面相交的交叉区域，以及所述量子阱结构的介电常数的实部量子阱结构对于预定波长的THz波是负的。

9. 发明授权

US4672577A Three-dimensional integrated circuit with optically coupled shared memories 失效
标题翻译：具有光耦合共享存储器的三维集成电路
公开(公告)号：US4672577A
公开(公告)日：1987-06-09
申请号：US702139
申请日：1985-02-15
申请人： Masataka Hirose , Masamichi Yamanishi , Yukio Osaka , Tadashi Ae , Tadao Ichikawa , Noriyoshi Yoshida , Ikuo Suemune
发明人： Masataka Hirose , Masamichi Yamanishi , Yukio Osaka , Tadashi Ae , Tadao Ichikawa , Noriyoshi Yoshida , Ikuo Suemune
IPC分类号： H01L27/10 , G06F12/06 , G06F15/173 , G11C11/404 , G11C11/409 , G11C11/42 , H01L21/8234 , H01L21/8242 , H01L27/088 , H01L27/108 , H01L27/14 , H01L31/12
CPC分类号： G11C11/409 , G11C11/404 , G11C11/42
摘要： Adjacent memory layers of a multi-layered integrated device as optically coupled, so that data written on one layer can be copied onto its adjacent layers through the optical coupling.
摘要翻译：光耦合的多层集成器件的相邻存储层，使得写在一层上的数据可以通过光耦合复制到其相邻层上。

10. 发明申请

US20110007768A1 QUANTUM CASCADE LASER 有权
标题翻译：量子CASCADE激光
公开(公告)号：US20110007768A1
公开(公告)日：2011-01-13
申请号：US12919289
申请日：2009-02-24
申请人： Masamichi Yamanishi , Kazuue Fujita , Tadataka Edamura , Naota Akikusa
发明人： Masamichi Yamanishi , Kazuue Fujita , Tadataka Edamura , Naota Akikusa
IPC分类号： H01S5/34
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/3406 , H01S5/3418 , H01S5/34313
摘要： A quantum cascade laser is configured so as to include a semiconductor substrate and an active layer which is provided on the substrate and has a cascade structure including multistage-laminated unit laminate structures 16 each including a quantum well emission layer 17 and an injection layer 18. Moreover, the unit laminate structure 16 has, in its subband level structure, an emission upper level 3, a lower level 2, and an injection level 4 of higher energy than the upper level 3, and light hv is generated by intersubband transition of electrons from the level 3 to the level 2 in the emission layer 17, and electrons after emission transition are injected into the injection level 4 of the subsequent stage via the injection layer 18. In addition, the emission layer 17 includes two or more well layers, and the first well layer closest to the injection layer of the preceding stage is used as a well layer for injection level formation. Accordingly, a quantum cascade laser capable of operation with high efficiency at high temperature can be realized.
摘要翻译：量子级联激光器被配置为包括半导体衬底和设置在衬底上的有源层，并且具有包括多层叠单元叠层结构16的级联结构，每个包括量子阱发射层17和注入层18。此外，单元叠层结构16在其子带层结构中具有比上层3更高能量的发射上层3，下层2和注入级4，并且通过电子的子带间转变产生光hv 从发光层17的3级到2级，发射转变后的电子经由注入层18注入后级的注入电平4.此外，发光层17包括两层以上的阱层，并且最靠近前一级的注入层的第一阱层用作注入层形成的阱层。因此，可以实现能够在高温下高效率地操作的量子级联激光器。

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