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1. 发明授权

US08765739B2 Azetidine compound and pharmaceutical use thereof 有权
标题翻译：氮杂环丁烷化合物及其药物用途
公开(公告)号：US08765739B2
公开(公告)日：2014-07-01
申请号：US12780146
申请日：2010-05-14
申请人： Kazutaka Ikegashira , Taku Ikenogami , Naoki Ogawa , Tatsuya Matsumoto , Takahiro Oka , Takuya Matsuo , Takayuki Yamasaki
发明人： Kazutaka Ikegashira , Taku Ikenogami , Naoki Ogawa , Tatsuya Matsumoto , Takahiro Oka , Takuya Matsuo , Takayuki Yamasaki
IPC分类号： A61K31/496 , A61K31/4427 , A61K31/4439 , A61K31/5377 , A61K31/551 , C07D401/06 , C07D401/14 , C07D405/14 , C07D409/14 , C07D413/14
CPC分类号： C07D401/06 , C07D401/14 , C07D405/14 , C07D409/14 , C07D413/14
摘要： Compounds of formula [I]: wherein each symbol is as defined in the description, or a pharmaceutically acceptable salts or solvates thereof.
摘要翻译：式[I]化合物：其中每个符号如说明书中所定义，或其药学上可接受的盐或溶剂化物。

2. 发明授权

US08197915B2 Method of depositing silicon oxide film by plasma enhanced atomic layer deposition at low temperature 有权
标题翻译：在低温下通过等离子体增强原子层沉积沉积氧化硅膜的方法
公开(公告)号：US08197915B2
公开(公告)日：2012-06-12
申请号：US12416809
申请日：2009-04-01
申请人： Takahiro Oka , Akira Shimizu
发明人： Takahiro Oka , Akira Shimizu
IPC分类号： H05H1/24 , C23C16/00
CPC分类号： C23C16/402 , C23C16/45542 , G03F7/40 , H01L21/02164 , H01L21/02274 , H01L21/0228 , H01L21/0337 , H01L21/32139
摘要： A method of depositing a silicon oxide film on a resist pattern or etched lines formed on a substrate by plasma enhanced atomic layer deposition (PEALD) includes: providing a substrate on which a resist pattern or etched lines are formed in a PEALD reactor; controlling a temperature of a susceptor on which the substrate is placed at less than 50° C. as a deposition temperature; introducing a silicon-containing precursor and an oxygen-supplying reactant to the PEALD reactor and applying RF power therein in a cycle, while the deposition temperature is controlled substantially or nearly at a constant temperature of less than 50° C., thereby depositing a silicon oxide atomic layer on the resist pattern or etched lines; and repeating the cycle multiple times substantially or nearly at the constant temperature to deposit a silicon oxide atomic film on the resist pattern or etched lines.
摘要翻译：通过等离子体增强原子层沉积（PEALD）在抗蚀剂图案或在衬底上形成的蚀刻线上沉积氧化硅膜的方法包括：提供在其中在PEALD反应器中形成抗蚀剂图案或蚀刻线的衬底; 将其上放置基板的基座的温度控制在低于50℃作为沉积温度; 在PEALD反应器中引入含硅前体和供氧反应物并在其中施加RF功率，同时基本上或几乎处于小于50℃的恒定温度下控制沉积温度，从而沉积硅抗蚀剂图案或蚀刻线上的氧化物原子层; 并且在恒定温度下基本上或接近多次重复该循环，以将氧化硅原子膜沉积在抗蚀剂图案或蚀刻线上。

3. 发明授权

US08038811B2 Process for producing bent pipe for line pipe 有权
标题翻译：管线弯管生产工艺
公开(公告)号：US08038811B2
公开(公告)日：2011-10-18
申请号：US12565254
申请日：2009-09-23
申请人： Takahiro Oka
发明人： Takahiro Oka
IPC分类号： C21D9/08 , C22C38/02 , C22C38/04
CPC分类号： C22C38/44 , C21D8/10 , C21D9/08 , C22C38/004 , C22C38/02 , C22C38/04 , C22C38/18 , C22C38/46 , C22C38/50
摘要： A steel pipe is prepared, which contains, by mass, at most 0.009% C, at most 1.0% Mn, at most 1.0% Si, at most 0.04% P, at most 0.005% S, 0.01 to 0.2% Ti, 0.01 to 0.10% V, 0.001 to 0.1% Al, at most 0.1% N, 4.0 to 8.0% Ni, 9.0 to 15.0% Cr, and 1.5 to 7.0% Mo, the balance being Fe and impurities. The prepared steel pipe is bent into a bend pipe. The bend pipe is quenched at a quenching temperature lower than 950° C. The quenched bend pipe is tempered. Accordingly, the bend pipe in accordance with the present invention has excellent SSC resistance.
摘要翻译：制备钢管，其质量含量最多为0.009％，至多1.0％的Mn，至多1.0％的Si，至多0.04％的P，至多0.005％的S，0.01至0.2％的Ti，0.01至 0.10％V，0.001〜0.1％Al，0.1％N以下，Ni：4.0〜8.0％，Cr：9.0〜15.0％，Mo：1.5〜7.0％，余量为Fe和杂质。准备好的钢管弯曲成弯管。弯曲管在低于950℃的淬火温度下淬火。淬火的弯管被回火。因此，根据本发明的弯曲管具有优异的耐SSC性。

4. 发明申请

US20100331301A1 AZETIDINE COMPOUND AND PHARMACEUTICAL USE THEREOF 有权
标题翻译： AZETIDINE化合物及其药物用途
公开(公告)号：US20100331301A1
公开(公告)日：2010-12-30
申请号：US12780146
申请日：2010-05-14
申请人： Kazutaka Ikegashira , Taku Ikenogami , Naoki Ogawa , Tatsuya Matsumoto , Takahiro Oka , Takuya Matsuo , Takayuki Yamasaki
发明人： Kazutaka Ikegashira , Taku Ikenogami , Naoki Ogawa , Tatsuya Matsumoto , Takahiro Oka , Takuya Matsuo , Takayuki Yamasaki
IPC分类号： A61K31/4427 , C07D401/06 , C07D401/14 , C07D413/14 , A61K31/4439 , A61K31/496 , A61K31/5377 , A61K31/4545 , A61K31/553 , A61K31/551 , A61P37/00 , A61P29/00 , A61P19/10 , A61P35/00 , A61P19/08 , A61P19/02 , A61P17/06 , A61P1/00
CPC分类号： C07D401/06 , C07D401/14 , C07D405/14 , C07D409/14 , C07D413/14
摘要： Compounds of formula [I]: wherein each symbol is as defined in the description, or a pharmaceutically acceptable salts or solvates thereof.
摘要翻译：式[I]化合物：其中每个符号如说明书中所定义，或其药学上可接受的盐或溶剂化物。

5. 发明授权

US07211883B2 Semiconductor chip package 有权
标题翻译：半导体芯片封装
公开(公告)号：US07211883B2
公开(公告)日：2007-05-01
申请号：US11128306
申请日：2005-05-13
申请人： Takahiro Oka , Makoto Terui
发明人： Takahiro Oka , Makoto Terui
IPC分类号： H01L23/02
CPC分类号： H01L24/06 , H01L23/3128 , H01L23/49811 , H01L24/48 , H01L24/73 , H01L25/0657 , H01L2224/0401 , H01L2224/04042 , H01L2224/05553 , H01L2224/05554 , H01L2224/06135 , H01L2224/06136 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/4824 , H01L2224/48465 , H01L2224/73215 , H01L2224/73265 , H01L2225/0651 , H01L2225/06555 , H01L2225/06572 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01013 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/15311 , H01L2924/1532 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor chip package is formed by a first semiconductor chip and a second semiconductor chip, which have electrodes for wiring at surfaces thereof, being integrated and mounted in a state in which reverse surfaces thereof oppose one another. Therefore, two semiconductor chips can be freely combined and mounted regardless of chip sizes thereof, and lengths of wires can be shortened. Thus, a wire-bonding yield can be improved, and a semiconductor package having excellent electric characteristics can be obtained.
摘要翻译：半导体芯片封装通过第一半导体芯片和第二半导体芯片形成，该第一半导体芯片和第二半导体芯片在其表面上具有用于布线的电极，在其相反的表面彼此相对的状态下被集成和安装。因此，无论芯片尺寸如何，两个半导体芯片可以自由组合和安装，并且可以缩短电线的长度。因此，可以提高引线接合率，并且可以获得具有优异电特性的半导体封装。

6. 发明申请

US20070049593A1 Tetracyclic fused heterocyclic compound and use thereof as HCV polymerase inhibitor 审中-公开
标题翻译：四环稠合杂环化合物及其作为HCV聚合酶抑制剂的用途
公开(公告)号：US20070049593A1
公开(公告)日：2007-03-01
申请号：US11064319
申请日：2005-02-23
申请人： Takahiro Oka , Kazutaka Ikegashira , Shintaro Hirashima , Hiroshi Yamanaka , Satoru Noji , Yasushi Niwa , Yoko Matsumoto , Toshihiro Sato , Izuru Ando , Yukihiro Nomura
发明人： Takahiro Oka , Kazutaka Ikegashira , Shintaro Hirashima , Hiroshi Yamanaka , Satoru Noji , Yasushi Niwa , Yoko Matsumoto , Toshihiro Sato , Izuru Ando , Yukihiro Nomura
IPC分类号： C07D471/02 , A61K31/53 , A61K31/519 , A61K31/498 , A61K31/503 , A61K31/4745
CPC分类号： C07D513/04 , C07D487/04 , C07D487/14 , C07D498/04 , C07D498/14
摘要： The present invention relates to a tetracyclic fused heterocyclic compound represented by the following formula [I] wherein each symbol is as defined in the specification, or a pharmaceutically acceptable a salt thereof, and a hepatitis C virus (HCV) polymerase inhibitor and a therapeutic agent for hepatitis C containing this compound. The compound of the present invention shows an anti-HCV activity based on the HCV polymerase inhibitory activity, and useful as an agent for the prophylaxis or treatment of hepatitis C.
摘要翻译：本发明涉及由下式[I]表示的四环稠合杂环化合物，其中各符号如说明书中所定义，或其药学上可接受的盐，丙型肝炎病毒（HCV）聚合酶抑制剂和治疗剂含有该化合物的丙型肝炎。本发明化合物基于HCV聚合酶抑制活性显示抗HCV活性，可用作预防或治疗丙型肝炎的药剂。

7. 发明授权

US06512287B1 Board frame, method for fabricating thereof and method for fabricating semiconductor apparatus 失效
标题翻译：板框架，其制造方法以及半导体装置的制造方法
公开(公告)号：US06512287B1
公开(公告)日：2003-01-28
申请号：US09324773
申请日：1999-06-03
申请人： Takahiro Oka
发明人： Takahiro Oka
IPC分类号： H01L2302
CPC分类号： H01L23/3128 , H01L21/565 , H01L24/45 , H01L24/48 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2924/00014 , H01L2924/01029 , H01L2924/01079 , H01L2924/15311 , H01L2924/181 , Y10T29/49121 , Y10T29/49169 , Y10T29/49171 , Y10T29/49172 , H01L2924/00 , H01L2224/05599 , H01L2924/00012
摘要： A board frame includes a wiring board region, which includes an island on which a semiconductor device is to be mounted; and a marginal region surrounding the wiring board region. The board frame further includes a frame region, which is located around the marginal region; and a support region which connects the wiring board region and the frame region. The marginal region is removed from the board frame and is put back to its original position, while the wiring board region is maintained being connected to the frame region through the support region.
摘要翻译：板框架包括布线板区域，该布线板区域包括其上要安装半导体器件的岛; 以及围绕布线板区域的边缘区域。板框架还包括位于边缘区域周围的框架区域; 以及连接布线板区域和框架区域的支撑区域。边缘区域从板框架上移除并被放回其原始位置，同时保持布线板区域通过支撑区域连接到框架区域。

8. 发明授权

US4760113A Process for continuously producing a high-melt viscoelastic ethylene-propylene copolymer 失效
标题翻译：用于连续生产高熔点粘弹性乙烯 - 丙烯共聚物的方法
公开(公告)号：US4760113A
公开(公告)日：1988-07-26
申请号：US942796
申请日：1986-12-17
申请人： Hiromasa Chiba , Shunji Kawazoe , Takahiro Oka
发明人： Hiromasa Chiba , Shunji Kawazoe , Takahiro Oka
IPC分类号： C08F210/16 , C08F2/00 , C08F2/02 , C08F2/04 , C08F2/06 , C08F4/60 , C08F4/64 , C08F4/642 , C08F6/00 , C08F6/06 , C08F297/08
CPC分类号： C08F297/083
摘要： A continuous polymerization process for producing a high-melt viscoelastic ethylene-propylene copolymer by the use of Ziegler-Natta catalyst, which process make it possible to stably produce an ethylene-propylene block copolymer having superior physical properties suitable to sheet molding and blow molding and capable of producing large-size molded products is provided,which process comprises(a) feeding propylene and ethylene in a weight proportion of ethylene in the total of propylene and ethylene of 0-5% into 3 or more polymerization vessels among 4 or more polymerization vessels connected in series, to carry out continuous polymerization step (i) and successively feeding ethylene and propylene in a weight proportion of ethylene in the total of ethylene and propylene of 10-100% into one or more polymerization vessels, to carry out continuous polymerization process (ii); (b) feeding the total quantity of the catalyst only to the first polymerization vessel; (c) feeding the total quantity of hydrogen substantially only to the first polymerization vessel; and (d) making the quantity of polymer obtained in step (i) 60-95 weight % based on the total polymerization quantity.
摘要翻译：通过使用齐格勒 - 纳塔催化剂制造高熔点粘弹性乙烯 - 丙烯共聚物的连续聚合方法，该方法使得可以稳定地制备具有适合于片材成型和吹塑成型的优异物理性能的乙烯 - 丙烯嵌段共聚物，以及提供能够生产大尺寸模制产品的方法，该方法包括（a）在4个或更多个聚合物中将丙烯和乙烯总量为0-5％的乙烯的重量比例的丙烯和乙烯进料到3个或更多个聚合容器中串联连接的容器，进行连续聚合步骤（i），并将乙烯和丙烯的总重量为10-100％的乙烯和丙烯的重量比连续地供入到一个或多个聚合容器中，以进行连续聚合方法（ii）; （b）仅向第一聚合容器供给催化剂总量; （c）基本上仅向第一聚合容器供给总量的氢; 和（d）基于总聚合量使步骤（i）中获得的聚合物的量为60-95重量％。

9. 发明授权

US07907241B2 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US07907241B2
公开(公告)日：2011-03-15
申请号：US12085971
申请日：2006-08-30
申请人： Kenji Fujita , Takayuki Natsume , Tetsuya Inoue , Takahiro Oka
发明人： Kenji Fujita , Takayuki Natsume , Tetsuya Inoue , Takahiro Oka
IPC分类号： G02F1/1335
CPC分类号： G02F1/13363 , G02B5/3016 , G02F1/133371 , G02F1/133555 , G02F1/133707 , G02F1/1393 , G02F2001/133565 , G02F2001/133633 , G02F2001/133638 , G02F2413/02 , G02F2413/07 , G02F2413/09
摘要： To provide a liquid crystal display device capable of improving display characteristics. The liquid crystal display device of the present invention is a liquid crystal display device including a structure in which the first substrate including a reflective layer, a liquid crystal layer, the second substrate, and a polarizer are stacked in this order from a back face to a display face, wherein the liquid crystal display device includes a retardation layer, in a region on a liquid crystal layer side of the reflective layer of the first substrate, or in a region where the reflective layer is not arranged of the first substrate, or in the second substrate, and the retardation layer provides two or more regions having different retardations in a display surface plane.
摘要翻译：提供能够提高显示特性的液晶显示装置。本发明的液晶显示装置是具有以下结构的液晶显示装置，该液晶显示装置的第一基板包括反射层，液晶层，第二基板以及偏振片，显示面，其中液晶显示装置包括延迟层，在第一基板的反射层的液晶层侧的区域中，或者在反射层未设置第一基板的区域中，或在第二基板中，延迟层在显示面平面上提供具有不同延迟的2个以上的区域。

10. 发明授权

US07075177B2 Semiconductor chip package 有权
公开(公告)号：US07075177B2
公开(公告)日：2006-07-11
申请号：US09912064
申请日：2001-07-25
申请人： Takahiro Oka , Makoto Terui
发明人： Takahiro Oka , Makoto Terui
IPC分类号： H01L23/02
CPC分类号： H01L24/06 , H01L23/3128 , H01L23/49811 , H01L24/48 , H01L24/73 , H01L25/0657 , H01L2224/0401 , H01L2224/04042 , H01L2224/05553 , H01L2224/05554 , H01L2224/06135 , H01L2224/06136 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/4824 , H01L2224/48465 , H01L2224/73215 , H01L2224/73265 , H01L2225/0651 , H01L2225/06555 , H01L2225/06572 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01013 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/15311 , H01L2924/1532 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor chip package is formed by a first semiconductor chip and a second semiconductor chip, which have electrodes for wiring at surfaces thereof, being integrated and mounted in a state in which reverse surfaces thereof oppose one another. Therefore, two semiconductor chips can be freely combined and mounted regardless of chip sizes thereof, and lengths of wires can be shortened. Thus, a wire-bonding yield can be improved, and a semiconductor package having excellent electric characteristics can be obtained.

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