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1. 发明申请

US20120161267A1 SOLID-STATE IMAGE PICKUP DEVICE 有权
标题翻译：固态图像拾取器件
公开(公告)号：US20120161267A1
公开(公告)日：2012-06-28
申请号：US13333609
申请日：2011-12-21
申请人： Takayuki Ezaki , Teruo Hirayama
发明人： Takayuki Ezaki , Teruo Hirayama
IPC分类号： H01L31/02
CPC分类号： H01L27/14612 , H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14689 , H01L29/4236 , H01L31/02
摘要： A solid-state image pickup device 1 according to the present invention includes a semiconductor substrate 2 on which a pixel 20 composed of a photodiode 3 and a transistor is formed. The transistor comprising the pixel 20 is formed on the surface of the semiconductor substrate, a pn junction portion formed between high concentration regions of the photodiode 3 is provided within the semiconductor substrate 2 and a part of the pn junction portion of the photodiode 3 is extended to a lower portion of the transistor formed on the surface of the semiconductor substrate 2. According to the present invention, there is provided a solid-state image pickup device in which a pixel size can be microminiaturized without lowering a saturated electric charge amount (Qs) and sensitivity.
摘要翻译：根据本发明的固态图像拾取器件1包括其上形成有由光电二极管3和晶体管构成的像素20的半导体衬底2。包括像素20的晶体管形成在半导体衬底的表面上，在半导体衬底2内部设置形成在光电二极管3的高浓度区域之间的pn结部分，并且光电二极管3的pn结部分的一部分被延伸到形成在半导体衬底2的表面上的晶体管的下部。根据本发明，提供一种固态图像拾取器件，其中像素尺寸可以在不降低饱和电荷量的情况下被微型化（Qs ）和灵敏度。

2. 发明授权

US07998778B2 Method of producing a solid-state imaging device 有权
标题翻译：固态成像装置的制造方法
公开(公告)号：US07998778B2
公开(公告)日：2011-08-16
申请号：US12662982
申请日：2010-05-14
申请人： Hideo Kanbe , Takayuki Ezaki
发明人： Hideo Kanbe , Takayuki Ezaki
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , H01L27/14601 , H01L27/1464 , H01L27/14643 , H01L27/14687
摘要： To provide a solid-state imaging device able to improve light transmittance of a transparent insulation film in a light incident side of a substrate, suppress the dark current, and prevent a quantum efficiently loss, wherein a pixel circuit is formed in a first surface of the substrate and light is received from a second surface, and having: a light receiving unit formed in the substrate and for generating a signal charge corresponding to an amount of incidence light and storing it; a transparent first insulation film formed on the second surface; and a transparent second insulation film formed on the first insulation film and for retaining a charge having the same polarity as the signal charge in an interface of the first insulation film or in inside, thicknesses of the first and second insulation film being determined to obtain a transmittance higher than when using only the first insulation film.
摘要翻译：为了提供能够提高基板的光入射侧的透明绝缘膜的透光率的固态成像装置，抑制暗电流，并且防止量子效率的损失，其中像素电路形成在第一表面基板和光从第二表面接收，并具有：形成在基板中的光接收单元，用于产生对应于入射光量的信号电荷并存储; 形成在第二表面上的透明第一绝缘膜; 以及透明的第二绝缘膜，形成在所述第一绝缘膜上并且用于保持与所述第一绝缘膜的界面中或内部具有与所述信号电荷相同的极性的电荷，所述第一绝缘膜和所述第二绝缘膜的厚度被确定为获得透射率高于仅使用第一绝缘膜时的透射率。

3. 发明申请

US20080083940A1 Solid-state image pickup device 有权
公开(公告)号：US20080083940A1
公开(公告)日：2008-04-10
申请号：US11978453
申请日：2007-10-29
申请人： Takayuki Ezaki , Teruo Hirayama
发明人： Takayuki Ezaki , Teruo Hirayama
IPC分类号： H01L27/146
CPC分类号： H01L27/14683 , H01L27/14603 , H01L27/14612 , H01L27/14614 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14643 , H01L27/14689
摘要： A solid-state image pickup device 1 according to the present invention includes a semiconductor substrate 2 on which a pixel 20 composed of a photodiode 3 and a transistor is formed. The transistor comprising the pixel 20 is formed on the surface of the semiconductor substrate, a pn junction portion formed between high concentration regions of the photodiode 3 is provided within the semiconductor substrate 2 and a part of the pn junction portion of the photodiode 3 is extended to a lower portion of the transistor formed on the surface of the semiconductor substrate 2. According to the present invention, there is provided a solid-state image pickup device in which a pixel size can be microminiaturized without lowering a saturated electric charge amount (Qs) and sensitivity.

4. 发明授权

US09347944B2 Method for detecting pneumonia causative bacteria using nucleic acid chromatography 有权
标题翻译：使用核酸色谱法检测肺炎致病菌的方法
公开(公告)号：US09347944B2
公开(公告)日：2016-05-24
申请号：US13637815
申请日：2011-03-30
申请人： Mutsunori Shirai , Takayuki Ezaki , Tsukasa Hayashi , Takeshi Ujiiye , Makoto Ganaha , Shigekazu Yamamoto
发明人： Mutsunori Shirai , Takayuki Ezaki , Tsukasa Hayashi , Takeshi Ujiiye , Makoto Ganaha , Shigekazu Yamamoto
IPC分类号： C12Q1/68 , G01N33/569
CPC分类号： G01N33/56933 , C12Q1/6816 , C12Q1/6865 , C12Q1/689 , C12Q2600/112 , C12Q2600/156 , G01N33/56911 , G01N33/56916 , G01N33/56938 , G01N33/56944 , Y02A50/451 , C12Q2565/137 , C12Q2525/143 , C12Q2537/125 , C12Q2537/143 , C12Q2563/149 , C12Q2565/625
摘要： Provided are a method and a kit for accurately and rapidly detecting ten types of targeting pneumonia bacteria: Streptococcus pneumoniae, Haemophilus influenzae, Mycoplasma pneumoniae, Chlamydophila pneumoniae, Legionella pneumophila, Klebsiella pneumoniae, Pseudomonas aeruginosa, Moraxella catarrhalis, methicillin-resistant Staphylococcus aureus (MRSA), and Staphylococcus aureus. A set of primer pairs directed to their respective target regions contained in the DnaJ gene, etc., of the ten types of pneumonia causative bacteria is designed for the ten bacterial strains and used to amplify gene products. A set of bacterial strain-specific probe pairs is further designed for the ten bacterial strains such that the probe pairs hybridize with the amplification products via sequences in the respective target regions differing from the sequences hybridized by the set of primer pairs. A first probe-bound labeled high molecular carrier in which plural types of first probes for the pneumonia bacteria are bound to a labeled high molecular carrier and a solid-phase second probe-carrying developing support are used as the set of probe pairs to perform nucleic acid chromatography.
摘要翻译：提供了用于准确和快速检测十种靶向性肺炎细菌的方法和试剂盒：肺炎链球菌，流感嗜血杆菌，肺炎支原体，肺炎衣原体，嗜肺军团菌，肺炎克雷伯菌，铜绿假单胞菌，卡他莫拉菌，耐甲氧西林金黄色葡萄球菌（MRSA））和金黄色葡萄球菌（Staphylococcus aureus）。针对十种类型肺炎致病细菌的DnaJ基因等中包含的各自靶区域的一组引物对设计用于十种细菌菌株并用于扩增基因产物。针对10个细菌菌株进一步设计了一组细菌菌株特异性探针对，使得探针对通过与由该组引物对杂交的序列不同的各个靶区域中的序列与扩增产物进行杂交。使用第一探针结合标记的高分子载体，其中用于肺炎细菌的多种类型的第一探针与标记的高分子载体结合，并且使用固相第二探针携带的显影载体作为探针对的一组以进行核酸酸性色谱。

5. 发明申请

US20110065225A1 SOLID-STATE IMAGING DEVICE, METHOD OF PRODUCING THE SAME, AND CAMERA 有权
标题翻译：固态成像装置，其制造方法和相机
公开(公告)号：US20110065225A1
公开(公告)日：2011-03-17
申请号：US12815879
申请日：2010-06-15
申请人： Hideo Kanbe , Takayuki Ezaki
发明人： Hideo Kanbe , Takayuki Ezaki
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , H01L27/14601 , H01L27/1464 , H01L27/14643 , H01L27/14687
摘要： To provide a solid-state imaging device able to improve light transmittance of a transparent insulation film in a light incident side of a substrate, suppress the dark current, and prevent a quantum efficiently loss, wherein a pixel circuit is formed in a first surface of the substrate and light is received from a second surface, and having: a light receiving unit formed in the substrate and for generating a signal charge corresponding to an amount of incidence light and storing it; a transparent first insulation film formed on the second surface; and a transparent second insulation film formed on the first insulation film and for retaining a charge having the same polarity as the signal charge in an interface of the first insulation film or in inside, thicknesses of the first and second insulation film being determined to obtain a transmittance higher than when using only the first insulation film.
摘要翻译：为了提供能够提高基板的光入射侧的透明绝缘膜的透光率的固态成像装置，抑制暗电流，并且防止量子效率的损失，其中像素电路形成在第一表面基板和光从第二表面接收，并具有：形成在基板中的光接收单元，用于产生对应于入射光量的信号电荷并存储; 形成在第二表面上的透明第一绝缘膜; 以及透明的第二绝缘膜，形成在所述第一绝缘膜上并且用于保持与所述第一绝缘膜的界面中或内部具有与所述信号电荷相同的极性的电荷，所述第一绝缘膜和所述第二绝缘膜的厚度被确定为获得透射率高于仅使用第一绝缘膜时的透射率。

6. 发明申请

US20100109006A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100109006A1
公开(公告)日：2010-05-06
申请号：US12604489
申请日：2009-10-23
申请人： Hirotaka Kobayashi , Kentaro Akiyama , Naoki Matsushita , Takayuki Ezaki
发明人： Hirotaka Kobayashi , Kentaro Akiyama , Naoki Matsushita , Takayuki Ezaki
IPC分类号： H01L23/522
CPC分类号： H01L27/14636 , H01L21/76283 , H01L24/05 , H01L24/10 , H01L24/45 , H01L24/48 , H01L24/78 , H01L27/1464 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/05624 , H01L2224/45015 , H01L2224/45144 , H01L2224/48453 , H01L2224/48463 , H01L2224/48624 , H01L2224/78301 , H01L2224/85181 , H01L2224/859 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/05042 , H01L2924/10253 , H01L2924/12036 , H01L2924/12043 , H01L2924/14 , H01L2924/1433 , H01L2924/15788 , H01L2924/19041 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device includes a semiconductor device layer, a multilayered wiring section formed of a plurality of wiring layers and a plurality of interlayer insulating films on one surface of the semiconductor device layer, an external connection electrode formed on one of the plurality of wiring layers, and an opening formed in a concave shape extending from the semiconductor device layer to the multilayered wiring section so as to expose a surface of the external connection electrode; the opening has a larger opening diameter at an end farther from the external connection electrode than at the other end closer to the external connection electrode.
摘要翻译：半导体器件包括半导体器件层，由多个布线层形成的多层布线区和在半导体器件层的一个表面上的多个层间绝缘膜，形成在多个布线层中的一个布线层上的外部连接电极，以及形成为从半导体器件层延伸到多层布线部分的凹形的开口，以露出外部连接电极的表面; 该开口在远离外部连接电极的端部具有比在另一端更靠近外部连接电极的开口直径较大的开口。

7. 发明申请

US20100075305A1 Detection of bacterium by utilizing dnaj gene and use thereof 审中-公开
标题翻译：利用dnaj基因检测细菌及其用途
公开(公告)号：US20100075305A1
公开(公告)日：2010-03-25
申请号：US12311217
申请日：2007-09-26
申请人： Takayuki Ezaki , Kiyofumi Ohkusu , Shigeru Yoshida
发明人： Takayuki Ezaki , Kiyofumi Ohkusu , Shigeru Yoshida
IPC分类号： C12Q1/68 , C12Q1/04 , C12P19/34
CPC分类号： C12Q1/689 , C12Q1/04 , C12Q2600/16 , G01N33/56911 , Y02A50/451 , Y02A50/52
摘要： Disclosed is a method for detecting the species of a bacterium in a simple manner. Specifically disclosed is a method for detecting the species of a bacterium, which can detect at least one bacterial species selected from Staphylococcus species, Streptococcus species, Klebsiella species, Escherichia species, Mycobacterium species, Legionella species, Vibrio species, Bacillus species, Neisseria species, Campylobacter species, Chlamydia species, Chlamydophila species, Mycoplasma species, Listeria species, Salmonella species and Yersinia species, and which comprises the steps of: a) contacting a sample suspected to contain a nucleic acid derived from the bacterial species; and b) detecting the presence or absence of the hybridization between the nucleic acid molecule and the nucleic acid contained in the sample.
摘要翻译：公开了以简单的方式检测细菌的种类的方法。具体公开了一种检测细菌种的方法，该细菌可以检测至少一种选自葡萄球菌属，链球菌属，克雷伯菌属，埃希氏杆菌属，分枝杆菌属，军团菌属，弧菌属，芽孢杆菌属，奈瑟氏球菌属，弯曲杆菌属，衣原体属，衣原体属，支原体属，利斯特氏菌属，沙门氏菌属和耶尔森氏菌属，包括以下步骤：a）使疑似含有源自细菌种的核酸的样品接触; 和b）检测核酸分子与样品中所含的核酸之间是否存在杂交。

8. 发明申请

US20070246746A1 Solid-state image pickup device 有权
标题翻译：固态图像拾取装置
公开(公告)号：US20070246746A1
公开(公告)日：2007-10-25
申请号：US11821715
申请日：2007-06-25
申请人： Takayuki Ezaki , Teruo Hirayama
发明人： Takayuki Ezaki , Teruo Hirayama
IPC分类号： H01L27/148
CPC分类号： H01L27/14683 , H01L27/14603 , H01L27/14612 , H01L27/14614 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14643 , H01L27/14689
摘要： A solid-state image pickup device 1 according to the present invention includes a semiconductor substrate 2 on which a pixel 20 composed of a photodiode 3 and a transistor is formed. The transistor comprising the pixel 20 is formed on the surface of the semiconductor substrate, a pn junction portion formed between high concentration regions of the photodiode 3 is provided within the semiconductor substrate 2 and a part of the pn junction portion of the photodiode 3 is extended to a lower portion of the transistor formed on the surface of the semiconductor substrate 2. According to the present invention, there is provided a solid-state image pickup device in which a pixel size can be microminiaturized without lowering a saturated electric charge amount (Qs) and sensitivity.
摘要翻译：根据本发明的固态图像拾取器件1包括其上形成有由光电二极管3和晶体管构成的像素20的半导体衬底2。包括像素20的晶体管形成在半导体衬底的表面上，在半导体衬底2内部设置形成在光电二极管3的高浓度区域之间的pn结部分，并且光电二极管3的pn结部分的一部分被延伸到形成在半导体衬底2的表面上的晶体管的下部。根据本发明，提供一种固态图像拾取装置，其中像素尺寸可以在不降低饱和电荷量（Qs）和灵敏度的情况下被微型化。

9. 发明申请

US20050167704A1 Solid-state image pickup device 有权
标题翻译：固态图像拾取装置
公开(公告)号：US20050167704A1
公开(公告)日：2005-08-04
申请号：US11050127
申请日：2005-02-03
申请人： Takayuki Ezaki , Teruo Hirayama
发明人： Takayuki Ezaki , Teruo Hirayama
IPC分类号： H01L27/146 , H04N5/335 , H04N5/355 , H04N5/369 , H04N5/374 , H01L27/148
CPC分类号： H01L27/14683 , H01L27/14603 , H01L27/14612 , H01L27/14614 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14643 , H01L27/14689
摘要： A solid-state image pickup device 1 according to the present invention includes a semiconductor substrate 2 on which a pixel 20 composed of a photodiode 3 and a transistor is formed. The transistor comprising the pixel 20 is formed on the surface of the semiconductor substrate, a pn junction portion formed between high concentration regions of the photodiode 3 is provided within the semiconductor substrate 2 and a part of the pn junction portion of the photodiode 3 is extended to a lower portion of the transistor formed on the surface of the semiconductor substrate 2. According to the present invention, there is provided a solid-state image pickup device in which a pixel size can be microminiaturized without lowering a saturated electric charge amount (Qs) and sensitivity.
摘要翻译：根据本发明的固态图像拾取器件1包括其上形成有由光电二极管3和晶体管构成的像素20的半导体衬底2。包括像素20的晶体管形成在半导体衬底的表面上，在半导体衬底2内部设置形成在光电二极管3的高浓度区域之间的pn结部分，并且光电二极管3的pn结部分的一部分被延伸到形成在半导体衬底2的表面上的晶体管的下部。根据本发明，提供一种固态图像拾取器件，其中像素尺寸可以在不降低饱和电荷量的情况下被微型化（Qs ）和灵敏度。

10. 发明授权

US08456014B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08456014B2
公开(公告)日：2013-06-04
申请号：US12604489
申请日：2009-10-23
申请人： Hirotaka Kobayashi , Kentaro Akiyama , Naoki Matsushita , Takayuki Ezaki
发明人： Hirotaka Kobayashi , Kentaro Akiyama , Naoki Matsushita , Takayuki Ezaki
IPC分类号： H01L23/522
CPC分类号： H01L27/14636 , H01L21/76283 , H01L24/05 , H01L24/10 , H01L24/45 , H01L24/48 , H01L24/78 , H01L27/1464 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/05624 , H01L2224/45015 , H01L2224/45144 , H01L2224/48453 , H01L2224/48463 , H01L2224/48624 , H01L2224/78301 , H01L2224/85181 , H01L2224/859 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/05042 , H01L2924/10253 , H01L2924/12036 , H01L2924/12043 , H01L2924/14 , H01L2924/1433 , H01L2924/15788 , H01L2924/19041 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device includes a semiconductor device layer, a multilayered wiring section formed of a plurality of wiring layers and a plurality of interlayer insulating films on one surface of the semiconductor device layer, an external connection electrode formed on one of the plurality of wiring layers, and an opening formed in a concave shape extending from the semiconductor device layer to the multilayered wiring section so as to expose a surface of the external connection electrode; the opening has a larger opening diameter at an end farther from the external connection electrode than at the other end closer to the external connection electrode.
摘要翻译：半导体器件包括半导体器件层，由多个布线层形成的多层布线区和在半导体器件层的一个表面上的多个层间绝缘膜，形成在多个布线层中的一个布线层上的外部连接电极，以及形成为从半导体器件层延伸到多层布线部分的凹形的开口，以露出外部连接电极的表面; 该开口在远离外部连接电极的端部具有比在另一端更靠近外部连接电极的开口直径较大的开口。

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