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    • 4. 发明申请
    • FUNCTIONAL FILM AND LAMINATE
    • 功能膜和层压板
    • US20120021214A1
    • 2012-01-26
    • US13260350
    • 2010-03-09
    • Takeshi HasegawaSatoshi NegishiSusumu Kurishima
    • Takeshi HasegawaSatoshi NegishiSusumu Kurishima
    • B32B27/00C09J7/02B32B7/12
    • C09J7/29C09J2201/622C09J2205/31Y10T428/2813Y10T428/31504
    • A functional film that does not show decrease of surface hardness even when an adhesive layer for adhering it to another member is provided, and does not generate separation nor delamination at the time of die cutting, and a laminate thereof are provided. The functional film can include a plastic film having a functional layer constituted by a cured film on one surface and an adhesive layer on the other surface. The adhesive layer contains a curable adhesive that can be cured by irradiation of ionizing radiation or heating, and is constituted so that the adhesive layer after cured by irradiation of ionizing radiation or heating shows a Martens hardness of 260 N/mm2 or lower, and the following relational expression is satisfied. Martens hardness of the adhesive layer after curing≧Martens hardness of the functional layer×0.25
    • 即使提供粘附到另一个部件上的粘合剂层,也没有显示表面硬度的降低的功能膜,并且在切割时不产生分离或分层,并且提供其层压体。 功能膜可以包括具有由一个表面上的固化膜和另一个表面上的粘合剂层构成的功能层的塑料膜。 粘合剂层含有可通过电离辐射照射或加热而固化的可固化粘合剂,并且构成为通过照射电离辐射或加热固化后的粘合剂层的马氏体硬度为260N / mm 2以下, 满足关系表达式。 固化后粘合层的马氏硬度≧功能层的马氏硬度×0.25
    • 7. 发明授权
    • Silicon wafer surface defect evaluation method
    • 硅晶片表面缺陷评估方法
    • US07632349B2
    • 2009-12-15
    • US11467411
    • 2006-08-25
    • Wataru ItouTakeshi HasegawaTakaaki Shiota
    • Wataru ItouTakeshi HasegawaTakaaki Shiota
    • C30B33/00
    • H01L22/12
    • There is provided a silicon wafer surface defect evaluation method capable of readily detecting a region where small crystal defects exist, the evaluation method comprising: a rapid heat treatment step of a silicon wafer from a silicon single-crystal ingot in an atmosphere which can nitride silicon at a temperature elevating speed of 10 to 150° C./second from a room temperature to temperatures between not lower than 1170° C. and less than a silicon melting point, holding the silicon wafer at the processing temperature for 1 to 120 seconds and then cooling the silicon wafer to the room temperature at a temperature lowering speed of 10 to 100° C./second; and a step of using a surface photo voltage method to calculate a minority carrier diffusion length on the wafer surface, thereby detecting a region on the wafer surface in which small COP's which cannot be detected at least by a particle counter exist.
    • 提供一种能够容易地检测出存在小晶体缺陷的区域的硅晶片表面缺陷评估方法,该评估方法包括:在能够将氮化硅的气氛中的硅单晶锭的硅晶片的快速热处理步骤 以10〜150℃/秒的温度升温速度从室温升温至不低于1170℃,低于硅熔点,将硅晶片在处理温度下保持1〜120秒, 然后以10〜100℃/秒的降温速度将硅晶片冷却至室温; 以及使用表面光电压法来计算晶片表面上的少数载流子扩散长度的步骤,从而检测晶片表面上至少存在无法检测到的小的COP的区域。
    • 10. 发明授权
    • Method for laying a rehabilitating pipe
    • 铺设修复管道的方法
    • US07165578B2
    • 2007-01-23
    • US11048961
    • 2005-02-02
    • Takao KamiyamaKoji KanetaKenji FujiiTakeshi Hasegawa
    • Takao KamiyamaKoji KanetaKenji FujiiTakeshi Hasegawa
    • F16L55/16
    • E03F3/06E03F2003/065F16L55/1657
    • A rehabilitating pipe is laid inside an existing pipe to rehabilitate the existing pipe. Support members are intergrally connected to an inner wall surface of the existing pipe so that loop portions of the respective support members extend from the inner wall surface of the existing pipe. The rehabilitating pipe is assembled inside of the existing pipe by mutually coupling segments of the rehabilitating pipe in a longitudinal direction of the existing pipe by inserting coupling members through connecting through-holes of the segments and through the loop portions of the respective support members to thereby support the assembled rehabilitating pipe so that the rehabilitating pipe remains inside of the existing pipe after assembly to rehabilitate the existing pipe.
    • 在现有的管道内放置一个修复管道,以恢复现有的管道。 支撑构件与现有管的内壁表面共同连接,使得各个支撑构件的环部从现有管的内壁表面延伸。 通过将连接构件通过连接部分的通孔和相应的支撑构件的环部分插入联接构件,将修复管组装在现有管道的内部,通过使现有管道的纵向方向相互连接, 支持组装的修复管,使得修复管在组装后保持在现有管内,以恢复现有管。