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    • 1. 发明申请
    • MICROWAVE HEATING METHOD AND MICROWAVE HEATING APPARATUS
    • 微波加热方法和微波加热装置
    • US20110031238A1
    • 2011-02-10
    • US12936787
    • 2010-02-04
    • Terutsugu SegawaSeiji HamanoFumio Sugata
    • Terutsugu SegawaSeiji HamanoFumio Sugata
    • H05B6/68H05B6/64
    • H05B6/80C04B35/64C04B2235/667F27B5/14F27B5/18F27D99/0006F27D2099/0028H05B2206/046
    • A microwave heating apparatus (101) includes a burning chamber (103) in which an object (102) to be burned is placed, a magnetron (116) for applying microwaves into the heating apparatus, a cooling gas introducing mechanism (112b) for introducing a cooling gas from outside the heating apparatus into the heating apparatus, a cooling gas channel (113b) through which the cooling gas flows to the burning chamber (103), heat-generating members (114a to 114e) for self-heating with microwaves applied thereto to heat the cooling gas flowing through the cooling gas channel (113b) and a control section (117) for, when the burning chamber (103) having the object (102) to be burned placed therein is cooled, causing the cooling gas introducing mechanism (112b) to introduce the cooling gas into the heating apparatus, and causing the magnetron (116) to intermittently apply microwaves into the heating apparatus.
    • 微波加热装置(101)包括:燃烧室(103),其中放置有待燃烧的物体(102);磁控管(116),用于向加热装置施加微波;冷却气体引入机构(112b),用于引入 从加热装置外部到加热装置的冷却气体,冷却气体流向燃烧室(103)的冷却气体通路(113b),利用微波进行自加热的发热部件(114a〜114e) 加热流过冷却气体通道(113b)的冷却气体和控制部(117),当将具有待燃烧物体(102)的燃烧室(103)冷却后,使冷却气体导入 机构(112b)将冷却气体引入加热装置,并使磁控管(116)间歇地向加热装置施加微波。
    • 4. 发明授权
    • Microwave heating method and microwave heating apparatus
    • 微波加热方式和微波加热装置
    • US08779339B2
    • 2014-07-15
    • US12936787
    • 2010-02-04
    • Terutsugu SegawaSeiji HamanoFumio Sugata
    • Terutsugu SegawaSeiji HamanoFumio Sugata
    • H05B6/64
    • H05B6/80C04B35/64C04B2235/667F27B5/14F27B5/18F27D99/0006F27D2099/0028H05B2206/046
    • A microwave heating apparatus (101) includes a burning chamber (103) in which an object (102) to be burned is placed, a magnetron (116) for applying microwaves into the heating apparatus, a cooling gas introducing mechanism (112b) for introducing a cooling gas from outside the heating apparatus into the heating apparatus, a cooling gas channel (113b) through which the cooling gas flows to the burning chamber (103), heat-generating members (114a to 114e) for self-heating with microwaves applied thereto to heat the cooling gas flowing through the cooling gas channel (113b) and a control section (117) for, when the burning chamber (103) having the object (102) to be burned placed therein is cooled, causing the cooling gas introducing mechanism (112b) to introduce the cooling gas into the heating apparatus, and causing the magnetron (116) to intermittently apply microwaves into the heating apparatus.
    • 微波加热装置(101)包括:燃烧室(103),其中放置有待燃烧的物体(102);磁控管(116),用于向加热装置施加微波;冷却气体引入机构(112b),用于引入 从加热装置外部到加热装置的冷却气体,冷却气体流向燃烧室(103)的冷却气体通道(113b),利用微波进行自加热的发热部件(114a〜114e) 加热流过冷却气体通道(113b)的冷却气体和控制部(117),当将具有待燃烧物体(102)的燃烧室(103)冷却后,使冷却气体导入 机构(112b)将冷却气体引入加热装置,并使磁控管(116)间歇地向加热装置施加微波。
    • 5. 发明申请
    • GRINDING APPARATUS AND GRINDING METHOD
    • 研磨设备和研磨方法
    • US20110065066A1
    • 2011-03-17
    • US12993413
    • 2009-04-06
    • Terutsugu SegawaSeiji HamanoFumio Sugata
    • Terutsugu SegawaSeiji HamanoFumio Sugata
    • A61C8/00B24B7/10
    • B24B55/02A61C13/0006A61C13/12B23Q11/1007B24B1/04B24B19/22
    • A grinding apparatus (100) includes: a rotating grinding tool (102) for grinding a workpiece (101) immersed in a cooling liquid (106); vibration generating mechanisms (107a) to (107f) for applying vibrations to the cooling liquid (106) and generating cavitation; and a controller (108) for causing the vibration generating mechanisms (107a) to (107f) to generate the cavitation when the rotating grinding tool (102) is operated. The controller (108) turns on/off the vibration generating mechanisms (107a) to (107f) and adjusts amplitudes of the vibrations of the cooling liquid (106) generated by the vibration generating mechanisms (107a) to (107f) depending on a region in the workpiece (101) to be machined and one out of a plurality of machining steps to be performed.
    • 研磨装置(100)包括:用于研磨浸入冷却液体(106)中的工件(101)的旋转研磨工具(102); 振动产生机构(107a)至(107f),用于向冷却液体(106)施加振动并产生空化; 以及用于当所述旋转的研磨工具(102)被操作时使所述振动产生机构(107a)至(107f)产生气蚀的控制器(108)。 控制器(108)打开/关闭振动产生机构(107a)至(107f),并且根据区域调节振动产生机构(107a)至(107f)产生的冷却液(106)振动的振幅 在待加工的工件(101)中,并且要执行多个加工步骤中的一个。
    • 7. 发明授权
    • Method and apparatus for wafer level burn-in
    • 晶圆级老化的方法和装置
    • US07940064B2
    • 2011-05-10
    • US12063276
    • 2006-05-29
    • Terutsugu SegawaMinoru Sanada
    • Terutsugu SegawaMinoru Sanada
    • G01R31/00
    • H01L21/67248G01R31/2874H01L21/67103H01L21/67242H01L21/67288
    • A temperature regulation plate 106 is divided into at least two areas, a heater 408 for applying a temperature load in correspondence with such areas and its control system are divided and controlled independently to set temperatures, and a cooling source is controlled by comparing the measurements from temperature sensors 409 arranged in respective areas for controlling the heater 408 and switching the measurement for calculating the control output sequentially thus reducing variation in in-plane temperature of a wafer due to heating when an electric load is applied. Since consumption and burning of a probe are prevented, highly reliable wafer level burn-in method and apparatus can be provided.
    • 温度调节板106被分成至少两个区域,加热器408用于对应于这些区域施加温度负荷,并且其控制系统被独立地分开和控制以设定温度,并且通过将来自 温度传感器409布置在用于控制加热器408的各个区域中,并且顺序地切换用于计算控制输出的测量值,从而当施加电负载时,由于加热而减小晶片的面内温度的变化。 由于防止了探测器的消耗和燃烧,因此可以提供高度可靠的晶片级老化方法和装置。