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    • 1. 发明授权
    • Method of manufacturing amorphous metal oxide film and methods of manufacturing capacitance element having amorphous metal oxide film and semiconductor device
    • 制造非晶金属氧化物膜的方法和制造具有非晶金属氧化物膜的电容元件和半导体器件的方法
    • US06916747B2
    • 2005-07-12
    • US10395389
    • 2003-03-25
    • Kiwamu AdachiSatoshi HoriuchiTetsuya Yukimoto
    • Kiwamu AdachiSatoshi HoriuchiTetsuya Yukimoto
    • C23C16/40C23C16/56H01L21/02H01L21/314H01L21/316H01L21/301H01L21/461
    • H01L21/31604C23C16/405C23C16/56H01L28/40
    • A film deposition process for depositing an amorphous metal oxide film, for example, an amorphous tantalum oxide film, and a film treatment process for improving the film quality of the amorphous tantalum oxide film in the state in which an amorphous state of the amorphous metal oxide film is maintained by a high-density plasma radiation treatment based upon ion and radical reactions, and which contains at least oxygen at an ion current density higher than 5 mA/cm2 are carried out, whereby a low-temperature treatment in the whole process is made possible. In addition, since the amorphous metal oxide film, which is excellent in film quality, can be deposited, the amorphous metal oxide film can be made high in reliability and can be produced inexpensively. The amorphous tantalum oxide film, which is excellent in film quality, can be manufactured inexpensively by a low-temperature treatment. Also, when a capacitance element having an amorphous metal oxide film and a semiconductor device are manufactured, the amorphous metal oxide film, which is excellent in film quality, can be deposited by a low-temperature treatment and a highly-reliable capacitance element and semiconductor device can be manufactured.
    • 用于沉积非晶态金属氧化物膜的成膜方法,例如非晶形氧化钽膜,以及用于提高非晶态氧化钽膜的非晶状态的非晶态氧化钽膜的膜质量的膜处理方法 通过基于离子和自由基反应的高密度等离子体辐射处理来维持膜,并且其至少包含离子电流密度高于5mA / cm 2的氧,由此低 整个过程中的温度处理成为可能。 另外,由于可以沉积膜质量优异的非晶金属氧化物膜,所以可以使非晶金属氧化物膜的可靠性高,并且可以廉价地制造。 可以通过低温处理廉价地制造膜质量优异的无定形氧化钽膜。 此外,当制造具有非晶金属氧化物膜和半导体器件的电容元件时,可以通过低温处理和高可靠性的电容元件和半导体来沉积膜质量优异的非晶态金属氧化物膜 装置可以制造。
    • 4. 发明授权
    • Method of manufacturing amorphous metal oxide film and methods of manufacturing capacitance element having amorphous metal oxide film and semiconductor device
    • 制造非晶金属氧化物膜的方法和制造具有非晶金属氧化物膜的电容元件和半导体器件的方法
    • US07666793B2
    • 2010-02-23
    • US10998759
    • 2004-11-30
    • Kiwamu AdachiSatoshi HoriuchiTetsuya Yukimoto
    • Kiwamu AdachiSatoshi HoriuchiTetsuya Yukimoto
    • H01L21/00
    • H01L21/31604C23C16/405C23C16/56H01L28/40
    • A film deposition process for depositing an amorphous metal oxide film, for example, an amorphous tantalum oxide film and a film treatment process for improving film quality of the amorphous tantalum oxide film in the state in which an amorphous state of the amorphous metal oxide film is being maintained by a high-density plasma radiation treatment based upon ion and radical reactions and which contains at least oxygen at an ion current density higher than 5 mA/cm2 are carried out, whereby a low-temperature treatment in the whole process is made possible. In addition, since the amorphous metal oxide film, which is excellent in film quality, can be deposited, the amorphous metal oxide film can be made high in reliability and can be produced inexpensively. The amorphous tantalum oxide film which is excellent in film quality can be manufactured inexpensively by a low-temperature treatment. Also, when a capacitance element having an amorphous metal oxide film and a semiconductor device are manufactured, the amorphous metal oxide film which is excellent in film quality can be deposited by a low-temperature treatment and highly-reliable capacitance element and semiconductor device can be manufactured.
    • 用于沉积非晶态金属氧化物膜的成膜方法,例如非晶态氧化钽膜和用于提高非晶态氧化金属膜的非晶态的状态下的非晶态氧化钽膜的膜质量的膜处理方法 通过基于离子和自由基反应的高密度等离子体辐射处理进行维持,并且至少含有离子电流密度高于5mA / cm 2的氧,从而使整个过程中的低温处理成为可能 。 另外,由于可以沉积膜质量优异的非晶金属氧化物膜,所以可以使非晶金属氧化物膜的可靠性高,并且可以廉价地制造。 可以通过低温处理廉价地制造膜质量优异的无定形氧化钽膜。 此外,当制造具有非晶金属氧化物膜和半导体器件的电容元件时,可以通过低温处理和高度可靠的电容元件来沉积膜质量优异的非晶金属氧化物膜,并且半导体器件可以 制造。
    • 5. 发明申请
    • Method of manufacturing amorphous metal oxide film and methods of manufacturing capacitance element having amorphous metal oxide film and semiconductor device
    • 制造非晶金属氧化物膜的方法和制造具有非晶金属氧化物膜的电容元件和半导体器件的方法
    • US20050095850A1
    • 2005-05-05
    • US10998759
    • 2004-11-30
    • Kiwamu AdachiSatoshi HoriuchiTetsuya Yukimoto
    • Kiwamu AdachiSatoshi HoriuchiTetsuya Yukimoto
    • C23C16/40C23C16/56H01L21/02H01L21/314H01L21/316H01L21/44
    • H01L21/31604C23C16/405C23C16/56H01L28/40
    • A film deposition process for depositing an amorphous metal oxide film, for example, an amorphous tantalum oxide film and a film treatment process for improving film quality of the amorphous tantalum oxide film in the state in which an amorphous state of the amorphous metal oxide film is being maintained by a high-density plasma radiation treatment based upon ion and radical reactions and which contains at least oxygen at an ion current density higher than 5 mA/cm2 are carried out, whereby a low-temperature treatment in the whole process is made possible. In addition, since the amorphous metal oxide film, which is excellent in film quality, can be deposited, the amorphous metal oxide film can be made high in reliability and can be produced inexpensively. The amorphous tantalum oxide film which is excellent in film quality can be manufactured inexpensively by a low-temperature treatment. Also, when a capacitance element having an amorphous metal oxide film and a semiconductor device are manufactured, the amorphous metal oxide film which is excellent in film quality can be deposited by a low-temperature treatment and highly-reliable capacitance element and semiconductor device can be manufactured.
    • 用于沉积非晶态金属氧化物膜的成膜方法,例如非晶态氧化钽膜和用于提高非晶态氧化金属膜的非晶态的状态下的非晶态氧化钽膜的膜质量的膜处理方法 通过基于离子和自由基反应的高密度等离子体辐射处理进行维持,并且至少含有离子电流密度高于5mA / cm 2的氧,由此低温 整个过程中的治疗成为可能。 另外,由于可以沉积膜质量优异的非晶金属氧化物膜,所以可以使非晶金属氧化物膜的可靠性高,并且可以廉价地制造。 可以通过低温处理廉价地制造膜质量优异的无定形氧化钽膜。 此外,当制造具有非晶金属氧化物膜和半导体器件的电容元件时,可以通过低温处理和高度可靠的电容元件来沉积膜质量优异的非晶金属氧化物膜,并且半导体器件可以 制造。