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1. 发明授权

US08624340B2 Plasma processing apparatus and method thereof 失效
标题翻译：等离子体处理装置及其方法
公开(公告)号：US08624340B2
公开(公告)日：2014-01-07
申请号：US13215276
申请日：2011-08-23
申请人： Tomohiro Okumura , Ichiro Nakayama , Hiroshi Kawaura , Tetsuya Yukimoto
发明人： Tomohiro Okumura , Ichiro Nakayama , Hiroshi Kawaura , Tetsuya Yukimoto
IPC分类号： H01L27/14 , H01L21/44
CPC分类号： H01L21/02667 , H05H1/28 , H05H1/34 , H05H1/3405
摘要： In a plasma torch unit, copper rods forming a coil as a whole are disposed inside copper rod inserting holes formed in a quartz block so that the quartz block is cooled by water flowing inside the copper rod inserting holes and cooling water pipes. A plasma ejection port is formed on the lowermost portion of the torch unit. While a gas is being supplied into a space inside an elongated chamber, high-frequency power is supplied to the copper rods to generate plasma in the space inside the elongated chamber so that the plasma is applied to a substrate.
摘要翻译：在等离子体焰炬单元中，形成线圈的铜棒整体设置在形成于石英块中的铜棒插入孔的内部，使得石英块被在铜杆插入孔和冷却水管内流动的水冷却。等离子体喷射口形成在割炬单元的最下部。当气体被供应到细长室内的空间中时，向铜棒供应高频功率以在细长室内的空间中产生等离子体，使得将等离子体施加到基底。

2. 发明授权

US4597459A Weight detecting type sensor 失效
标题翻译：重量检测型传感器
公开(公告)号：US4597459A
公开(公告)日：1986-07-01
申请号：US675754
申请日：1984-11-28
申请人： Yoshiki Iwata , Nobuo Kawase , Yoshinori Tanaka , Takashi Miyake , Hiroshi Kawaura
发明人： Yoshiki Iwata , Nobuo Kawase , Yoshinori Tanaka , Takashi Miyake , Hiroshi Kawaura
IPC分类号： G01G23/18 , G01G11/08 , G01G3/14 , G01G7/00
CPC分类号： G01G11/083 , Y10S177/05
摘要： A weight detecting type sensor comprising a roller capable of partly jutting out upwardly from the surface of a body conveying belt, a strut rotatably supporting the roller and having a through-aperture at a portion thereof, a sensor having an optical axis associated with the through-aperture formed in the strut, and a pair of magnets disposed below the bottom of the strut.
摘要翻译：一种重量检测型传感器，包括能够从主体输送带的表面向上突出部分地突出的滚子，可转动地支撑滚子的支柱，并在其一部分具有通孔，传感器具有与通孔相关联的光轴 - 支柱中形成的孔，以及设置在支柱底部下方的一对磁体。

3. 发明授权

US6030459A Low-pressure processing device 失效
标题翻译：低压处理装置
公开(公告)号：US6030459A
公开(公告)日：2000-02-29
申请号：US68048
申请日：1998-04-28
申请人： Hiroshi Kawaura
发明人： Hiroshi Kawaura
IPC分类号： H01L21/68 , C23C16/44 , C23C16/54 , H01L21/00 , H01L21/205 , H01L21/677 , C23C16/00 , C23F1/02
CPC分类号： H01L21/67751 , C23C16/4409 , C23C16/54 , H01L21/67017
摘要： A semiconductor manufacturing system performs etching, ashing and CVD to form a thin film, using a gas plasma. An apparatus for treatment under a reduced pressure has two treatment chambers (23), a first load-lock chamber (21) connected to the treatment chambers, and second load-lock chambers (22) connected to the first load-lock chamber, the first and second load-lock chambers being set at the same pressure, wherein a disc (19) is disposed in the first load-lock chamber, the disc having a central shaft with four stage units (30) fixed thereto, the stage units permitting substrates to be rested thereon, and by a vertical movement and a rotative conveyance motion such as 180.degree. rotation of the disc there are formed the treatment chambers and the second load-lock chambers simultaneously with the conveyance of the substrates. The formation of the treatment chambers and the second load-lock chambers is effected by moving the disc vertically and thereby providing a seal between an upper cover (24) of the first load-lock chamber and upper covers (25) of the second load-lock chambers and also providing a seal between the upper cover (24) of the first load-lock chamber and upper covers (26) of the treatment chambers.
摘要翻译： PCT No.PCT / JP96 / 03470 Sec。 371日期：1998年4月28日 102（e）1998年4月28日PCT PCT 1996年11月27日PCT公布。 WO97 / 44820 PCT公开号日期1997年11月27日半导体制造系统使用气体等离子体进行蚀刻，灰化和CVD以形成薄膜。减压处理装置具有两个处理室（23），连接到处理室的第一装载锁定室（21）和连接到第一装载锁定室的第二装载锁定室（22），第一和第二加载锁定室被设置在相同的压力下，其中盘（19）设置在第一加载锁定室中，盘具有中心轴，其中固定有四个级单元（30），该级单元允许基板被放置在其上，并且通过垂直运动和诸如盘的180°旋转的旋转传送运动，在基板的输送的同时形成处理室和第二加载锁定室。处理室和第二加载锁定室的形成是通过垂直移动盘来实现的，从而在第一加载锁定室的上盖（24）和第二加载锁定室的上盖（25）之间提供密封，并且还在第一加载锁定室的上盖（24）和处理室的上盖（26）之间提供密封。

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