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1. 发明授权

US08624340B2 Plasma processing apparatus and method thereof 失效
标题翻译：等离子体处理装置及其方法
公开(公告)号：US08624340B2
公开(公告)日：2014-01-07
申请号：US13215276
申请日：2011-08-23
申请人： Tomohiro Okumura , Ichiro Nakayama , Hiroshi Kawaura , Tetsuya Yukimoto
发明人： Tomohiro Okumura , Ichiro Nakayama , Hiroshi Kawaura , Tetsuya Yukimoto
IPC分类号： H01L27/14 , H01L21/44
CPC分类号： H01L21/02667 , H05H1/28 , H05H1/34 , H05H1/3405
摘要： In a plasma torch unit, copper rods forming a coil as a whole are disposed inside copper rod inserting holes formed in a quartz block so that the quartz block is cooled by water flowing inside the copper rod inserting holes and cooling water pipes. A plasma ejection port is formed on the lowermost portion of the torch unit. While a gas is being supplied into a space inside an elongated chamber, high-frequency power is supplied to the copper rods to generate plasma in the space inside the elongated chamber so that the plasma is applied to a substrate.
摘要翻译：在等离子体焰炬单元中，形成线圈的铜棒整体设置在形成于石英块中的铜棒插入孔的内部，使得石英块被在铜杆插入孔和冷却水管内流动的水冷却。等离子体喷射口形成在割炬单元的最下部。当气体被供应到细长室内的空间中时，向铜棒供应高频功率以在细长室内的空间中产生等离子体，使得将等离子体施加到基底。

2. 发明授权

US06916747B2 Method of manufacturing amorphous metal oxide film and methods of manufacturing capacitance element having amorphous metal oxide film and semiconductor device 失效
标题翻译：制造非晶金属氧化物膜的方法和制造具有非晶金属氧化物膜的电容元件和半导体器件的方法
公开(公告)号：US06916747B2
公开(公告)日：2005-07-12
申请号：US10395389
申请日：2003-03-25
申请人： Kiwamu Adachi , Satoshi Horiuchi , Tetsuya Yukimoto
发明人： Kiwamu Adachi , Satoshi Horiuchi , Tetsuya Yukimoto
IPC分类号： C23C16/40 , C23C16/56 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/301 , H01L21/461
CPC分类号： H01L21/31604 , C23C16/405 , C23C16/56 , H01L28/40
摘要： A film deposition process for depositing an amorphous metal oxide film, for example, an amorphous tantalum oxide film, and a film treatment process for improving the film quality of the amorphous tantalum oxide film in the state in which an amorphous state of the amorphous metal oxide film is maintained by a high-density plasma radiation treatment based upon ion and radical reactions, and which contains at least oxygen at an ion current density higher than 5 mA/cm2 are carried out, whereby a low-temperature treatment in the whole process is made possible. In addition, since the amorphous metal oxide film, which is excellent in film quality, can be deposited, the amorphous metal oxide film can be made high in reliability and can be produced inexpensively. The amorphous tantalum oxide film, which is excellent in film quality, can be manufactured inexpensively by a low-temperature treatment. Also, when a capacitance element having an amorphous metal oxide film and a semiconductor device are manufactured, the amorphous metal oxide film, which is excellent in film quality, can be deposited by a low-temperature treatment and a highly-reliable capacitance element and semiconductor device can be manufactured.
摘要翻译：用于沉积非晶态金属氧化物膜的成膜方法，例如非晶形氧化钽膜，以及用于提高非晶态氧化钽膜的非晶状态的非晶态氧化钽膜的膜质量的膜处理方法通过基于离子和自由基反应的高密度等离子体辐射处理来维持膜，并且其至少包含离子电流密度高于5mA / cm 2的氧，由此低整个过程中的温度处理成为可能。另外，由于可以沉积膜质量优异的非晶金属氧化物膜，所以可以使非晶金属氧化物膜的可靠性高，并且可以廉价地制造。可以通过低温处理廉价地制造膜质量优异的无定形氧化钽膜。此外，当制造具有非晶金属氧化物膜和半导体器件的电容元件时，可以通过低温处理和高可靠性的电容元件和半导体来沉积膜质量优异的非晶态金属氧化物膜装置可以制造。

3. 发明授权

US07666793B2 Method of manufacturing amorphous metal oxide film and methods of manufacturing capacitance element having amorphous metal oxide film and semiconductor device 失效
标题翻译：制造非晶金属氧化物膜的方法和制造具有非晶金属氧化物膜的电容元件和半导体器件的方法
公开(公告)号：US07666793B2
公开(公告)日：2010-02-23
申请号：US10998759
申请日：2004-11-30
申请人： Kiwamu Adachi , Satoshi Horiuchi , Tetsuya Yukimoto
发明人： Kiwamu Adachi , Satoshi Horiuchi , Tetsuya Yukimoto
IPC分类号： H01L21/00
CPC分类号： H01L21/31604 , C23C16/405 , C23C16/56 , H01L28/40
摘要： A film deposition process for depositing an amorphous metal oxide film, for example, an amorphous tantalum oxide film and a film treatment process for improving film quality of the amorphous tantalum oxide film in the state in which an amorphous state of the amorphous metal oxide film is being maintained by a high-density plasma radiation treatment based upon ion and radical reactions and which contains at least oxygen at an ion current density higher than 5 mA/cm2 are carried out, whereby a low-temperature treatment in the whole process is made possible. In addition, since the amorphous metal oxide film, which is excellent in film quality, can be deposited, the amorphous metal oxide film can be made high in reliability and can be produced inexpensively. The amorphous tantalum oxide film which is excellent in film quality can be manufactured inexpensively by a low-temperature treatment. Also, when a capacitance element having an amorphous metal oxide film and a semiconductor device are manufactured, the amorphous metal oxide film which is excellent in film quality can be deposited by a low-temperature treatment and highly-reliable capacitance element and semiconductor device can be manufactured.
摘要翻译：用于沉积非晶态金属氧化物膜的成膜方法，例如非晶态氧化钽膜和用于提高非晶态氧化金属膜的非晶态的状态下的非晶态氧化钽膜的膜质量的膜处理方法通过基于离子和自由基反应的高密度等离子体辐射处理进行维持，并且至少含有离子电流密度高于5mA / cm 2的氧，从而使整个过程中的低温处理成为可能。另外，由于可以沉积膜质量优异的非晶金属氧化物膜，所以可以使非晶金属氧化物膜的可靠性高，并且可以廉价地制造。可以通过低温处理廉价地制造膜质量优异的无定形氧化钽膜。此外，当制造具有非晶金属氧化物膜和半导体器件的电容元件时，可以通过低温处理和高度可靠的电容元件来沉积膜质量优异的非晶金属氧化物膜，并且半导体器件可以制造。

4. 发明申请

US20050095850A1 Method of manufacturing amorphous metal oxide film and methods of manufacturing capacitance element having amorphous metal oxide film and semiconductor device 失效
标题翻译：制造非晶金属氧化物膜的方法和制造具有非晶金属氧化物膜的电容元件和半导体器件的方法
公开(公告)号：US20050095850A1
公开(公告)日：2005-05-05
申请号：US10998759
申请日：2004-11-30
申请人： Kiwamu Adachi , Satoshi Horiuchi , Tetsuya Yukimoto
发明人： Kiwamu Adachi , Satoshi Horiuchi , Tetsuya Yukimoto
IPC分类号： C23C16/40 , C23C16/56 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/44
CPC分类号： H01L21/31604 , C23C16/405 , C23C16/56 , H01L28/40
摘要： A film deposition process for depositing an amorphous metal oxide film, for example, an amorphous tantalum oxide film and a film treatment process for improving film quality of the amorphous tantalum oxide film in the state in which an amorphous state of the amorphous metal oxide film is being maintained by a high-density plasma radiation treatment based upon ion and radical reactions and which contains at least oxygen at an ion current density higher than 5 mA/cm2 are carried out, whereby a low-temperature treatment in the whole process is made possible. In addition, since the amorphous metal oxide film, which is excellent in film quality, can be deposited, the amorphous metal oxide film can be made high in reliability and can be produced inexpensively. The amorphous tantalum oxide film which is excellent in film quality can be manufactured inexpensively by a low-temperature treatment. Also, when a capacitance element having an amorphous metal oxide film and a semiconductor device are manufactured, the amorphous metal oxide film which is excellent in film quality can be deposited by a low-temperature treatment and highly-reliable capacitance element and semiconductor device can be manufactured.
摘要翻译：用于沉积非晶态金属氧化物膜的成膜方法，例如非晶态氧化钽膜和用于提高非晶态氧化金属膜的非晶态的状态下的非晶态氧化钽膜的膜质量的膜处理方法通过基于离子和自由基反应的高密度等离子体辐射处理进行维持，并且至少含有离子电流密度高于5mA / cm 2的氧，由此低温整个过程中的治疗成为可能。另外，由于可以沉积膜质量优异的非晶金属氧化物膜，所以可以使非晶金属氧化物膜的可靠性高，并且可以廉价地制造。可以通过低温处理廉价地制造膜质量优异的无定形氧化钽膜。此外，当制造具有非晶金属氧化物膜和半导体器件的电容元件时，可以通过低温处理和高度可靠的电容元件来沉积膜质量优异的非晶金属氧化物膜，并且半导体器件可以制造。

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