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1. 发明授权

US08742387B2 Resistive memory devices with improved resistive changing elements 有权
标题翻译：具有改进的电阻变化元件的电阻式存储器件
公开(公告)号：US08742387B2
公开(公告)日：2014-06-03
申请号：US12145608
申请日：2008-06-25
申请人： Thomas Happ , Franz Kreupl , Jan Boris Philipp , Petra Majewski
发明人： Thomas Happ , Franz Kreupl , Jan Boris Philipp , Petra Majewski
IPC分类号： H01L47/00 , H01L45/00
CPC分类号： H01L45/1253 , G11C13/0004 , G11C2213/79 , H01L45/06 , H01L45/085 , H01L45/1233 , H01L45/1246 , H01L45/141 , H01L45/146
摘要： An integrated circuit includes a memory cell with a resistance changing memory element. The resistance changing memory element includes a first electrode, a second electrode, and a resistivity changing material disposed between the first and second electrodes, where the resistivity changing material is configured to change resistive states in response to application of a voltage or current to the first and second electrodes. In addition, at least one of the first electrode and the second electrode comprises an insulator material including a self-assembled electrically conductive element formed within the insulator material. The self-assembled electrically conductive element formed within the insulator material remains stable throughout the operation of switching the resistivity changing material to different resistive states.
摘要翻译：集成电路包括具有电阻变化存储元件的存储单元。电阻变化存储元件包括第一电极，第二电极和设置在第一和第二电极之间的电阻率变化材料，其中电阻率变化材料被配置为响应于施加电压或电流而改变电阻状态和第二电极。此外，第一电极和第二电极中的至少一个包括绝缘体材料，其包括形成在绝缘体材料内的自组装导电元件。形成在绝缘体材料内的自组装导电元件在将电阻率变化材料切换到不同电阻状态的整个操作期间保持稳定。

2. 发明申请

US20120285512A1 SOLAR CELL ARRAY AND THIN-FILM SOLAR MODULE AND PRODUCTION METHOD THEREFOR 审中-公开
标题翻译：太阳能电池阵列和薄膜太阳能电池组件及其制造方法
公开(公告)号：US20120285512A1
公开(公告)日：2012-11-15
申请号：US13519578
申请日：2011-01-27
申请人： Jan Boris Philipp , Thomas Happ
发明人： Jan Boris Philipp , Thomas Happ
IPC分类号： H01L31/05 , H01L31/18
CPC分类号： H01L31/18 , H01L31/046 , H01L31/0749 , Y02E10/541
摘要： A solar cell array is described which can be designed in particular as a thin-film solar module. A production method for a solar cell array is further described.
摘要翻译：描述了可以特别设计为薄膜太阳能模块的太阳能电池阵列。进一步描述太阳能电池阵列的制造方法。

3. 发明授权

US08250293B2 Data exchange in resistance changing memory for improved endurance 有权
标题翻译：电阻变化记忆中的数据交换，以提高耐力
公开(公告)号：US08250293B2
公开(公告)日：2012-08-21
申请号：US12687951
申请日：2010-01-15
申请人： Thomas Happ , Jan Boris Philipp
发明人： Thomas Happ , Jan Boris Philipp
IPC分类号： G06F12/10 , G06F12/16
CPC分类号： G11C11/16 , G11C11/1673 , G11C11/1675 , G11C13/0002 , G11C13/0035 , G11C13/0069
摘要： According to one embodiment of the present invention, a method of operating an integrated circuit including a plurality of resistance changing memory cells grouped into physical memory units is provided. The method includes: Monitoring writing access numbers assigned to the physical memory units, each writing access number reflecting the number of writing accesses to the physical memory unit to which the writing access number is assigned; if the value of a writing access number assigned to a first physical memory unit exceeds a writing access threshold value, a data exchange process is carried out during which the data content stored within the first physical memory unit is exchanged with the data content of a second physical memory unit having a writing access number of a lower value.
摘要翻译：根据本发明的一个实施例，提供了一种操作集成电路的方法，该集成电路包括分组成物理存储器单元的多个电阻变化存储器单元。该方法包括：监视分配给物理存储器单元的写入访问号码，每个写入访问号码反映写入访问次数到写入访问号码的物理存储单元; 如果分配给第一物理存储器单元的写访问号码的值超过写访问阈值，则执行数据交换处理，在该数据交换处理期间，存储在第一物理存储单元内的数据内容与第二物理存储单元的数据内容交换物理存储单元具有较低值的写入访问号。

4. 发明授权

US08084799B2 Integrated circuit with memory having a step-like programming characteristic 有权
标题翻译：具有阶梯状编程特性的具有存储器的集成电路
公开(公告)号：US08084799B2
公开(公告)日：2011-12-27
申请号：US11488422
申请日：2006-07-18
申请人： Thomas Happ , Jan Boris Philipp
发明人： Thomas Happ , Jan Boris Philipp
IPC分类号： H01L27/108
CPC分类号： G11C11/5678 , G11C13/0004 , G11C13/0069 , G11C2013/0078 , G11C2013/009 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： A memory cell includes a first electrode, a second electrode, and phase change material between the first electrode and the second electrode. The phase change material has a step-like programming characteristic. The first electrode, the second electrode, and the phase change material form a via or trench memory cell.
摘要翻译：存储单元包括在第一电极和第二电极之间的第一电极，第二电极和相变材料。相变材料具有阶梯状编程特性。第一电极，第二电极和相变材料形成通孔或沟槽存储单元。

5. 发明授权

US08017930B2 Pillar phase change memory cell 有权
标题翻译：支柱相变存储单元
公开(公告)号：US08017930B2
公开(公告)日：2011-09-13
申请号：US11643438
申请日：2006-12-21
申请人： Jan Boris Philipp , Thomas Happ
发明人： Jan Boris Philipp , Thomas Happ
IPC分类号： H01L47/00
CPC分类号： H01L45/1675 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148
摘要： A memory cell includes a first electrode, a storage location, and a second electrode. The storage location includes a phase change material and contacts the first electrode. The storage location has a first cross-sectional width. The second electrode contacts the storage location and has a second cross-sectional width greater than the first cross-sectional width. The first electrode, the storage location, and the second electrode form a pillar phase change memory cell.
摘要翻译：存储单元包括第一电极，存储位置和第二电极。存储位置包括相变材料并与第一电极接触。存储位置具有第一横截面宽度。第二电极接触存储位置并且具有大于第一横截面宽度的第二横截面宽度。第一电极，存储位置和第二电极形成柱状相变存储单元。

6. 发明授权

US07906368B2 Phase change memory with tapered heater 有权
标题翻译：带锥形加热器的相变存储器
公开(公告)号：US07906368B2
公开(公告)日：2011-03-15
申请号：US11771501
申请日：2007-06-29
申请人： Matthew Breitwisch , Thomas Happ , Eric A. Joseph , Hsiang-Lan Lung , Jan Boris Philipp
发明人： Matthew Breitwisch , Thomas Happ , Eric A. Joseph , Hsiang-Lan Lung , Jan Boris Philipp
IPC分类号： H01L21/06
CPC分类号： H01L45/1675 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144
摘要： An embodiment of the present invention includes a method of forming a nonvolatile phase change memory (PCM) cell. This method includes forming at least one bottom electrode; forming at least one phase change material layer on at least a portion of an upper surface of the bottom electrode; forming at least one heater layer on at least a portion of an upper surface of the phase change material layer; and shaping the heater layer into a tapered shape, such that an upper surface of the heater layer has a cross-sectional width that is longer than a cross-sectional width of a bottom surface of the heater layer contacting the phase change material layer.
摘要翻译：本发明的实施例包括形成非易失性相变存储器（PCM）单元的方法。该方法包括形成至少一个底部电极; 在所述底部电极的上表面的至少一部分上形成至少一个相变材料层; 在所述相变材料层的上表面的至少一部分上形成至少一个加热层; 并且将加热器层成形为锥形，使得加热器层的上表面的横截面宽度大于与相变材料层接触的加热器层的底表面的横截面宽度。

7. 发明授权

US07889536B2 Integrated circuit including quench devices 有权
标题翻译：集成电路包括淬火装置
公开(公告)号：US07889536B2
公开(公告)日：2011-02-15
申请号：US11957878
申请日：2007-12-17
申请人： Thomas Happ , Jan Boris Philipp
发明人： Thomas Happ , Jan Boris Philipp
IPC分类号： G11C11/00 , G11C11/36
CPC分类号： G11C13/003 , G11C13/0004 , G11C13/0069 , G11C2013/0078 , G11C2013/0092 , G11C2213/72 , G11C2213/74 , G11C2213/79
摘要： An integrated circuit includes a line, at least two quench devices coupled to the line, and a resistivity changing material memory cell coupled to the line. The at least two quench devices are configured to quench a write signal on the line during a write operation of the memory cell.
摘要翻译：集成电路包括线路，耦合到线路的至少两个骤冷器件以及耦合到该线路的电阻率变化材料存储器单元。至少两个骤冷装置被配置为在存储器单元的写入操作期间在线路上猝灭写入信号。

8. 发明授权

US07859894B2 Energy adjusted write pulses in phase-change memory cells 有权
标题翻译：相变存储单元中的能量调节写入脉冲
公开(公告)号：US07859894B2
公开(公告)日：2010-12-28
申请号：US11972415
申请日：2008-01-10
申请人： Thomas Happ , Zaidi Shoaib
发明人： Thomas Happ , Zaidi Shoaib
IPC分类号： G11C11/00
CPC分类号： G01K7/015 , G11C7/04 , G11C13/0004 , G11C13/0069 , G11C2013/0092
摘要： An integrated circuit that includes a plurality of phase-change memory cells, at least one write pulse generator, and at least one temperature sensor. The plurality of phase-change memory cells are each capable of defining at least a first and a second state. The write pulse generator generates a write pulse for the plurality of phase-change memory cells. The temperature sensor is capable of sensing temperature. The write pulse generator adjusts the write pulse for at least some of the phase-change memory cells in accordance with the temperature sensed by the temperature sensor.
摘要翻译：一种集成电路，包括多个相变存储器单元，至少一个写入脉冲发生器和至少一个温度传感器。多个相变存储单元各自能够至少限定第一状态和第二状态。写脉冲发生器产生用于多个相变存储单元的写入脉冲。温度传感器能感测温度。写入脉冲发生器根据温度传感器感测的温度来调节至少一些相变存储器单元的写入脉冲。

9. 发明申请

US20100323493A1 Method for Fabricating an Integrated Circuit Including Resistivity Changing Material Having a Planarized Surface 有权
标题翻译：包括具有平坦化表面的电阻率变化材料的集成电路的制造方法
公开(公告)号：US20100323493A1
公开(公告)日：2010-12-23
申请号：US12856007
申请日：2010-08-13
申请人： Jan Boris Philipp , Thomas Happ
发明人： Jan Boris Philipp , Thomas Happ
IPC分类号： H01L21/02
CPC分类号： H01L45/1683 , G11C11/5678 , G11C13/0004 , G11C2213/79 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148
摘要： An integrated circuit is fabricated by providing a preprocessed wafer including a first electrode, depositing a dielectric material over the preprocessed wafer, etching an opening in the dielectric material to expose a portion of the first electrode and depositing a first resistivity changing material over exposed portions of the etched dielectric material and the first electrode. The first resistivity changing material is planarized to expose the etched dielectric material. A second resistivity changing material is deposited over the etched dielectric material and the first resistivity changing material, and an electrode material is deposited over the second resistivity changing material.
摘要翻译：通过提供包括第一电极的预处理晶片，在预处理的晶片上沉积电介质材料，蚀刻介电材料中的开口以暴露第一电极的一部分并在第一电极的暴露部分上沉积第一电阻率变化材料来制造集成电路蚀刻的电介质材料和第一电极。第一电阻率变化材料被平坦化以暴露蚀刻的电介质材料。第二电阻率变化材料沉积在蚀刻的电介质材料和第一电阻率变化材料上，并且电极材料沉积在第二电阻率变化材料上。

10. 发明授权

US07791933B2 Optimized phase change write method 失效
标题翻译：优化相变写入方式
公开(公告)号：US07791933B2
公开(公告)日：2010-09-07
申请号：US11963119
申请日：2007-12-21
申请人： Mark Lamorey , Thomas Happ
发明人： Mark Lamorey , Thomas Happ
IPC分类号： G11C11/00
CPC分类号： G11C29/02 , G11C7/00 , G11C13/0004 , G11C13/0023 , G11C13/0069 , G11C29/021 , G11C29/028 , G11C29/50 , G11C2013/0078 , G11C2029/5006 , G11C2213/79
摘要： A system of writing data to a phase change random access memory (PCRAM) on an integrated circuit (IC), and a design structure including the IC embodied in a machine readable medium are disclosed. The system includes an array of phase change elements with a plurality of devices providing independent control of a row access and a column access to the PCRAM. A column line (bit line) is pre-charged to a single predetermined level prior to enabling current flow to a corresponding selected phase change element. A current flow in the phase change element with a row (word line) is initiated once the column (bit line) has been pre-charged, to write data to the PCRAM cell. The current flow is terminated in the phase change element by closing the column line (bit line) preferably by quenching.
摘要翻译：公开了一种将数据写入集成电路（IC）上的相变随机存取存储器（PCRAM）的系统，以及包括体现在机器可读介质中的IC的设计结构。该系统包括具有提供行访问的独立控制和对PCRAM的列访问的多个设备的相变元件阵列。在使电流流动到相应的选定相变元件之前，列线（位线）被预充电到单个预定电平。一旦列（位线）已预充电，就会启动具有行（字线）的相变元件中的电流，以将数据写入PCRAM单元。通过优选通过淬火闭合列线（位线），在相变元件中终止电流。

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