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    • 1. 发明授权
    • Method for determining a dopant concentration in a semiconductor sample
    • 用于确定半导体样品中的掺杂剂浓度的方法
    • US07841015B2
    • 2010-11-23
    • US12281806
    • 2007-02-28
    • Walter ArnoldKerstin SchwarzUte Rabe
    • Walter ArnoldKerstin SchwarzUte Rabe
    • G01Q60/46
    • G01Q60/30G01Q60/32G01Q60/40
    • A method is described for determining a dopant concentration on a surface and/or in layer region lying close to the surface of a semiconductor sample using an atomic force microscope, whose leaf-spring tip is brought into contact with the semiconductor sample, forming a Schottky barrier, wherein an electric alternating potential is applied between the spring-leaf tip and the semiconductor sample in the region of the Schottky barrier in such a way that a space charge region inside the semiconductor sample defining the three-dimensional extension of the Schottky barrier is excited and begins to oscillate within the confines of its spatial extension, said oscillations are transmitted to the leaf-spring, are detected and form the basis for determining the dopant concentration.
    • 描述了一种用于使用原子力显微镜确定在靠近半导体样品的表面的表面和/或层的区域中的掺杂剂浓度的方法,所述原子力显微镜的板簧尖与半导体样品接触,形成肖特基 阻挡层,其中在所述肖特基势垒区域中的所述弹簧叶尖和所述半导体样品之间施加电交替电位,使得限定所述肖特基势垒的三维延伸的所述半导体样品内的空间电荷区域为 激发并在其空间延伸的范围内开始振荡,所述振荡被传输到板簧,被检测并形成用于确定掺杂剂浓度的基础。
    • 3. 发明授权
    • Acoustic microscope
    • 声学显微镜
    • US5675075A
    • 1997-10-07
    • US545849
    • 1995-11-13
    • Walter ArnoldUte Rabe
    • Walter ArnoldUte Rabe
    • G01N29/00B81B3/00G01H3/12G01H9/00G01N29/06G01N29/24G01N29/46G01B5/28
    • G01H3/125G01H9/00G01N29/06G01N29/2418G01N29/46G01Q60/32G01N2291/011G01N2291/02827G01N2291/0421Y10S977/86Y10S977/87
    • An acoustic microscope allowing both the topography and the elasticity of a sample to be measured at the same time. To this end the displacement of a cantilever with a tip is measured by the deflection of a laser beam. In order to measure the topography, the average deviation of the tip is held constant by a regulation circuit. The regulation circuit consists of a split-photodiode which supplies a neutral signal to the output of a normalizing amplifier which delivers a neutral value. Deviations from this neutral signal are compensated by a z-electrode of a piezocrystal. The elastic properties of the sample are measured by coupling ultrasound into the sample by means of a transducer and the high-frequency displacements of the cantilever with the tip are detected by a second detection device that consists of knife-edge detector and a fast photodiode. The detection device may also consist of a heterodyne time-of-flight interferometer or a capacitive detection scheme.
    • PCT No.PCT / DE94 / 00765 Sec。 371日期:1995年11月13日 102(e)1995年11月13日,PCT PCT。1994年6月30日PCT公布。 第WO95 / 03531号公报 日期1995年2月2日声学显微镜同时测量样品的形貌和弹性。 为此,通过激光束的偏转测量悬臂与尖端的位移。 为了测量地形,尖端的平均偏差由调节电路保持恒定。 调节电路包括一个分离光电二极管,它将中性信号提供给一个传递中性值的归一化放大器的输出端。 与该中性信号的偏差由压电晶体的z电极补偿。 通过借助于换能器将超声波耦合到样品中来测量样品的弹性,通过由刀刃检测器和快速光电二极管组成的第二检测装置检测悬臂与尖端的高频位移。 检测装置还可以由外差时间干涉仪或电容检测方案组成。
    • 6. 发明申请
    • METHOD FOR DETERMINING A DOPANT CONCENTRATION IN A SEMICONDUCTOR SAMPLE
    • 用于确定半导体样品中浓度浓度的方法
    • US20090100554A1
    • 2009-04-16
    • US12281806
    • 2007-02-28
    • Walter ArnoldKerstin SchwarzUte Rabe
    • Walter ArnoldKerstin SchwarzUte Rabe
    • G01N13/16
    • G01Q60/30G01Q60/32G01Q60/40
    • A method is described for determining a dopant concentration on a surface and/or in layer region lying close to the surface of a semiconductor sample using an atomic force microscope, whose leaf-spring tip is brought into contact with the semiconductor sample, forming a Schottky barrier, wherein an electric alternating potential is applied between the spring-leaf tip and the semiconductor sample in the region of the Schottky barrier in such a way that a space charge region inside the semiconductor sample defining the three-dimensional extension of the Schottky barrier is excited and begins to oscillate within the confines of its spatial extension, said oscillations are transmitted to the leaf-spring, are detected and form the basis for determining the dopant concentration.
    • 描述了一种用于使用原子力显微镜确定在靠近半导体样品的表面的表面和/或层的区域中的掺杂剂浓度的方法,所述原子力显微镜的板簧尖与半导体样品接触,形成肖特基 阻挡层,其中在所述肖特基势垒区域中的所述弹簧叶尖和所述半导体样品之间施加电交替电位,使得限定所述肖特基势垒的三维延伸的所述半导体样品内的空间电荷区域为 激发并在其空间延伸的范围内开始振荡,所述振荡被传输到板簧,被检测并形成用于确定掺杂剂浓度的基础。
    • 8. 发明申请
    • Method for determining tribological properties of a sample surface using a scanning microscope (sem) and associated scanning microscope
    • 使用扫描显微镜(sem)和相关扫描显微镜测定样品表面的摩擦学性质的方法
    • US20060150719A1
    • 2006-07-13
    • US10524729
    • 2003-08-14
    • Michael ReinstadtlerUte RabeWalter Arnold
    • Michael ReinstadtlerUte RabeWalter Arnold
    • G01B5/28
    • G01Q60/28G01H3/00G01N29/22G01N29/346G01N2291/02827G01N2291/101G01Q60/26
    • Described is a method for examining a surface of a sample using an atomic force scanning microscope (AFM) comprising a cantilever with a longitudinal extension along which a measuring tip is disposed, which is selectively arranged relative to said sample surface by a driver means and whose spatial position is detected using a sensor unit, and said microscope is provided with at least one ultrasound generator, which initiates vibration excitation at a given excitation frequency between said sample surface and said cantilever, the measuring tip of which is brought into contact with said sample surface in such a manner that said measuring tip is excited to vibrations which are oriented lateral to said sample surface and perpendicular to said longitudinal extension of said cantilever and that the torsional vibrations induced in said cantilever are detected and analyzed by means of an evaluation unit. The invention is distinguished in that the vibration excitation occurs in such a manner that the oscillations executed by the measuring tip have higher harmonic vibration parts relative to the excitation frequency, that vibration excitation is conducted at excitation amplitudes which lead inside the cantilever to torsional amplitudes, the maximum values of which form a largely constant plateau value despite increasing excitation amplitudes and the resonance spectra of which undergo, in the range of the maximum values of the torsional amplitudes, a widening of the resonance spectrum which is determinable by a plateau width, and that used for examining the sample surface are the resonance spectra, preferably the plateau value, the plateau width and/or the gradient of the respective resonance spectra.
    • 描述了一种使用原子力扫描显微镜(AFM)检查样品表面的方法,所述原子力扫描显微镜(AFM)包括具有纵向延伸部的悬臂,沿着所述纵向延伸部布置测量尖端,所述悬臂通过驱动装置相对于所述样品表面选择性地布置, 使用传感器单元检测空间位置,并且所述显微镜设置有至少一个超声波发生器,其在所述样品表面和所述悬臂之间以给定的激发频率启动振动激励,其测量尖端与所述样品接触 表面,使得所述测量尖端被激发为对所述样品表面横向并垂直于所述悬臂的所述纵向延伸的振动,并且通过评估单元检测和分析在所述悬臂中引起的扭转振动。 本发明的区别在于,振动激励以这样的方式发生,使得由测量尖端执行的振荡相对于激励频率具有较高的谐波振动部分,即在悬臂内引导到扭转振幅的激励振幅下进行振动激励, 其最大值虽然增加了激励幅度并且其谐振谱在扭振幅度的最大值的范围内经历了由平台宽度确定的共振谱的加宽,但是其最大值形成了大致恒定的平台值,以及 用于检查样品表面的是共振光谱,优选平台值,平台宽度和/或各个共振谱的梯度。