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1. 发明授权

US07841015B2 Method for determining a dopant concentration in a semiconductor sample 有权
标题翻译：用于确定半导体样品中的掺杂剂浓度的方法
公开(公告)号：US07841015B2
公开(公告)日：2010-11-23
申请号：US12281806
申请日：2007-02-28
申请人： Walter Arnold , Kerstin Schwarz , Ute Rabe
发明人： Walter Arnold , Kerstin Schwarz , Ute Rabe
IPC分类号： G01Q60/46
CPC分类号： G01Q60/30 , G01Q60/32 , G01Q60/40
摘要： A method is described for determining a dopant concentration on a surface and/or in layer region lying close to the surface of a semiconductor sample using an atomic force microscope, whose leaf-spring tip is brought into contact with the semiconductor sample, forming a Schottky barrier, wherein an electric alternating potential is applied between the spring-leaf tip and the semiconductor sample in the region of the Schottky barrier in such a way that a space charge region inside the semiconductor sample defining the three-dimensional extension of the Schottky barrier is excited and begins to oscillate within the confines of its spatial extension, said oscillations are transmitted to the leaf-spring, are detected and form the basis for determining the dopant concentration.
摘要翻译：描述了一种用于使用原子力显微镜确定在靠近半导体样品的表面的表面和/或层的区域中的掺杂剂浓度的方法，所述原子力显微镜的板簧尖与半导体样品接触，形成肖特基阻挡层，其中在所述肖特基势垒区域中的所述弹簧叶尖和所述半导体样品之间施加电交替电位，使得限定所述肖特基势垒的三维延伸的所述半导体样品内的空间电荷区域为激发并在其空间延伸的范围内开始振荡，所述振荡被传输到板簧，被检测并形成用于确定掺杂剂浓度的基础。

2. 发明申请

US20090100554A1 METHOD FOR DETERMINING A DOPANT CONCENTRATION IN A SEMICONDUCTOR SAMPLE 有权
标题翻译：用于确定半导体样品中浓度浓度的方法
公开(公告)号：US20090100554A1
公开(公告)日：2009-04-16
申请号：US12281806
申请日：2007-02-28
申请人： Walter Arnold , Kerstin Schwarz , Ute Rabe
发明人： Walter Arnold , Kerstin Schwarz , Ute Rabe
IPC分类号： G01N13/16
CPC分类号： G01Q60/30 , G01Q60/32 , G01Q60/40
摘要： A method is described for determining a dopant concentration on a surface and/or in layer region lying close to the surface of a semiconductor sample using an atomic force microscope, whose leaf-spring tip is brought into contact with the semiconductor sample, forming a Schottky barrier, wherein an electric alternating potential is applied between the spring-leaf tip and the semiconductor sample in the region of the Schottky barrier in such a way that a space charge region inside the semiconductor sample defining the three-dimensional extension of the Schottky barrier is excited and begins to oscillate within the confines of its spatial extension, said oscillations are transmitted to the leaf-spring, are detected and form the basis for determining the dopant concentration.
摘要翻译：描述了一种用于使用原子力显微镜确定在靠近半导体样品的表面的表面和/或层的区域中的掺杂剂浓度的方法，所述原子力显微镜的板簧尖与半导体样品接触，形成肖特基阻挡层，其中在所述肖特基势垒区域中的所述弹簧叶尖和所述半导体样品之间施加电交替电位，使得限定所述肖特基势垒的三维延伸的所述半导体样品内的空间电荷区域为激发并在其空间延伸的范围内开始振荡，所述振荡被传输到板簧，被检测并形成用于确定掺杂剂浓度的基础。

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