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1. 发明申请

US20230098264A1 METHOD OF PREPARING A SPECIMEN FOR SCANNING CAPACITANCE MICROSCOPY 有权
公开(公告)号：US20230098264A1
公开(公告)日：2023-03-30
申请号：US17700835
申请日：2022-03-22
申请人： MSSCORPS CO., LTD.
发明人： CHI-LUN LIU , HUI-NI HUANG , CHIA-LING CHEN , SHIHHSIN CHANG
IPC分类号： G01Q30/20 , G01Q60/46
摘要： The present invention discloses a method of preparing a specimen for scanning capacitance microscopy, comprising the steps of: providing a sample including at least one object to be analyzed; manually grinding the sample from an edge of the sample toward a target region containing the object to be analyzed gradually, and stopping at a distance of dl from a longitudinal section of the at least one object to be analyzed in the target region to form a grinding stopping surface; cutting the grinding stopping surface by a plasma focused ion beam equipped with a scanning electron microscopy toward the target region and stopping at a distance of d2 from the longitudinal section to form a cutting stopping surface, wherein 0

2. 发明授权

US07856665B2 Apparatus and method for scanning capacitance microscopy and spectroscopy 有权
标题翻译：扫描电容显微镜和光谱仪的装置和方法
公开(公告)号：US07856665B2
公开(公告)日：2010-12-21
申请号：US11985597
申请日：2007-11-15
申请人： Maarten Rutgers , William H. Hertzog , Keith M. Jones , Amir A. Moshar
发明人： Maarten Rutgers , William H. Hertzog , Keith M. Jones , Amir A. Moshar
IPC分类号： G01Q60/24 , G01Q60/46
CPC分类号： G01Q60/48 , G01Q30/04 , G01Q40/00 , Y10S977/866
摘要： An apparatus and technique for measuring the electrical capacitance between a conducting tip of a scanning probe microscope and a sample surface is described. A high frequency digital vector network analyzer is connected to the probe tip of the cantilever of an atomic force microscope, and data collection is coordinated by a digital computer using digital trigger signals between the AFM controller and the vector network analyzer. Methods for imaging tip-sample capacitance and spectroscopic measurements at a single point on the sample are described. A method for system calibration is described.
摘要翻译：描述了用于测量扫描探针显微镜的导电尖端和样品表面之间的电容的装置和技术。高频数字矢量网络分析仪连接到原子力显微镜悬臂的探针尖端，数字采集系统采用AFM控制器与矢量网络分析仪之间的数字触发信号进行数据采集。描述了在样品上的单个点处成像尖端样品电容和光谱测量的方法。描述了一种用于系统校准的方法。

3. 发明申请

US20160061695A1 METHOD AND APPARATUS FOR INSPECTING PROCESS SOLUTION, AND SAMPLE PREPARATION APPARATUS IN INSPECTION 审中-公开
标题翻译：检验过程解决方法和装置，检验样品制备装置
公开(公告)号：US20160061695A1
公开(公告)日：2016-03-03
申请号：US14475164
申请日：2014-09-02
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人： Tzu-Sou CHUANG , Chi-Wen KUO
IPC分类号： G01N1/28 , G01Q60/24 , G01N27/02 , G01N27/72 , G01Q60/38 , G01Q60/46 , G01Q60/50 , G01Q60/26 , G01Q60/30 , G01N21/65 , G01B5/00
CPC分类号： G01N1/2813 , G01N21/65 , G01N2021/8427 , G01Q60/24 , G01Q60/26 , G01Q60/30 , G01Q60/50
摘要： A method for inspecting a process solution is provided. In this method, a process solution is disposed on a surface of a substrate. A liquid of the process solution is removed to form an inspection sample by a spinning method. The surface of the substrate of the inspection sample is inspected by the surface inspection device to identify whether a residue of the process solution is left on the surface of the substrate after removing the liquid of the process solution. Further, an apparatus for inspecting a process solution and a sample preparation apparatus in inspection are also provided herein.
摘要翻译：提供了一种用于检查处理液的方法。在该方法中，将处理液设置在基板的表面上。除去处理液的液体，通过纺丝法形成检查样品。检查样品的基材的表面由表面检查装置检查，以鉴定在除去工艺溶液的液体之后是否残留在工艺溶液的表面上。此外，还提供了一种用于在检查中检查处理溶液和样品制备装置的装置。

4. 发明授权

US06942914B2 Dielectric recording medium, and method of and apparatus for producing the same 失效
标题翻译：介电记录介质及其制造方法和装置
公开(公告)号：US06942914B2
公开(公告)日：2005-09-13
申请号：US10354102
申请日：2003-01-30
申请人： Atsushi Onoe , Yasuo Cho
发明人： Atsushi Onoe , Yasuo Cho
IPC分类号： G01Q60/46 , G01Q60/50 , G01Q80/00 , G11B9/00 , G11B9/02 , B32B3/02
CPC分类号： G11B9/1463 , G11B9/02 , G11B9/1472 , Y10T428/219 , Y10T428/231 , Y10T428/24777
摘要： The dielectric material is, for example, a ferroelectric single crystal having a uniform thickness, and its one surface is used for a recording and reproducing surface on which a probe for recording and reproducing works. LiTaO3 is used as the dielectric material. The conductive thin film, which is, for example, about 1000 to 2000 Å thick, is placed on a surrounding portion of a recording and reproducing surface, a back surface, and a side surface of the dielectric material. This conductive thin film, to which aluminum is added by a method of deposition, is connected to a common electrode of a recording and reproducing apparatus. The substrate is intended to preserve the dielectric material, which is thin, and it uses silicon or the like in a predetermined thickness, for example. A conductive paste is a material for sticking to the substrate the dielectric material having the conductive thin film thereon, and indium and silver paste are used for it.
摘要翻译：介电材料例如是具有均匀厚度的铁电单晶，其一个表面用于记录和再现工作用的记录和再现表面。 LiTaO 3 3用作电介质材料。导电薄膜例如为约1000〜2000，被放置在电介质材料的记录再现表面，背表面和侧表面的周围部分上。通过沉积方法将铝加入的导电薄膜连接到记录和再现装置的公共电极。该衬底用于保持薄的电介质材料，例如使用预定厚度的硅等。导电膏是用于将其上具有导电薄膜的电介质材料粘贴到基底上的材料，并且使用铟和银膏。

5. 发明授权

US06912193B2 Record condition extraction system and method of dielectric recording medium, and information recording apparatus 失效
标题翻译：介质记录介质的记录条件提取系统和方法以及信息记录装置
公开(公告)号：US06912193B2
公开(公告)日：2005-06-28
申请号：US10354101
申请日：2003-01-30
申请人： Yasuo Cho , Atsushi Onoe
发明人： Yasuo Cho , Atsushi Onoe
IPC分类号： G01Q60/24 , G01Q60/46 , G01Q80/00 , G01Q90/00 , G11B9/00 , G11B9/02 , G11B9/14 , G11B11/00 , G11B11/08
CPC分类号： B82Y10/00 , G11B9/02 , G11B9/14 , G11B9/1472 , G11B11/007 , G11B11/08
摘要： The record condition extraction system (1) of a dielectric recording medium is intended to obtain an applied voltage and an applied time length to be recorded when recording information in the dielectric recording medium. The record condition extraction system (1) is provided with: an applied voltage setting device (11); an applied time length setting device (12); a record control device (13); an applied voltage/applied time length record device (14); a record device (15); a dot radius measurement device (16); a dot radius record device (17); an optimum dot radius detection device (18); a record condition determination device (19); and an output device (20). The applied voltage setting device (11) and the applied time length setting device (12) set a voltage and a time applied to a probe (31) of the record device (15), respectively. The dot radius of a polarization domain 38, which is recorded at the record device (15), is measured at the dot radius measurement device (16), and the optimum polarization domain (38) is obtained at the optimum dot radius detection device (18). The applied voltage and the applied time length which have formed the polarization domain (38) are extracted as an optimum record condition.
摘要翻译：电介质记录介质的记录条件提取系统（1）旨在获得在介质记录介质中记录信息时要记录的施加电压和施加的时间长度。记录条件提取系统（1）具有：施加电压设定装置（11）; 施加时间长度设定装置（12）; 记录控制装置（13）; 施加电压/施加时间长度记录装置（14）; 记录装置（15）; 点半径测量装置（16）; 点半径记录装置（17）; 最佳点半径检测装置（18）; 记录条件确定装置（19）; 和输出装置（20）。施加电压设定装置（11）和施加的时间长度设定装置（12）分别设定施加到记录装置（15）的探头（31）的电压和时间。在点半径测量装置（16）处测量在记录装置（15）处记录的偏振域38的点半径，并且在最佳点半径检测装置（ 18）。已经形成偏振域（38）的施加电压和施加的时间长度被提取为最佳记录条件。

6. 发明授权

US11619650B1 Method of preparing a specimen for scanning capacitance microscopy 有权
公开(公告)号：US11619650B1
公开(公告)日：2023-04-04
申请号：US17700835
申请日：2022-03-22
申请人： MSSCORPS CO., LTD.
发明人： Chi-Lun Liu , Hui-Ni Huang , Chia-Ling Chen , Shihhsin Chang
IPC分类号： G01Q30/20 , G01Q60/46
摘要： The present invention discloses a method of preparing a specimen for scanning capacitance microscopy, comprising the steps of: providing a sample including at least one object to be analyzed; manually grinding the sample from an edge of the sample toward a target region containing the object to be analyzed gradually, and stopping at a distance of dl from a longitudinal section of the at least one object to be analyzed in the target region to form a grinding stopping surface; cutting the grinding stopping surface by a plasma focused ion beam equipped with a scanning electron microscopy toward the target region and stopping at a distance of d2 from the longitudinal section to form a cutting stopping surface, wherein 0

7. 发明授权

US10746635B2 Method and apparatus for inspecting process solution, and sample preparation apparatus in inspection 有权
公开(公告)号：US10746635B2
公开(公告)日：2020-08-18
申请号：US14475164
申请日：2014-09-02
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人： Tzu-Sou Chuang , Chi-Wen Kuo
IPC分类号： G01N1/28 , G01Q60/24 , G01N27/02 , G01N27/72 , G01Q60/38 , G01Q60/46 , G01Q60/50 , G01Q60/26 , G01Q60/30 , G01N21/65 , G01B5/00 , G01N21/84
摘要： A method for inspecting a process solution is provided. In this method, a process solution is disposed on a surface of a substrate. A liquid of the process solution is removed to form an inspection sample by a spinning method. The surface of the substrate of the inspection sample is inspected by the surface inspection device to identify whether a residue of the process solution is left on the surface of the substrate after removing the liquid of the process solution. Further, an apparatus for inspecting a process solution and a sample preparation apparatus in inspection are also provided herein.

8. 发明授权

US09557348B2 Semiconductor testing structures and fabrication method thereof 有权
标题翻译：半导体测试结构及其制造方法
公开(公告)号：US09557348B2
公开(公告)日：2017-01-31
申请号：US14567362
申请日：2014-12-11
申请人： Semiconductor Manufacturing International (Beijing) Corporation , Semiconductor Manufacturing International (Shanghai) Corporation
发明人： Nan Li , Lilung Lai , Ling Zhu
IPC分类号： G01Q30/20 , G01Q60/46 , C23F1/00 , B32B37/18 , B32B38/10 , G01B21/20 , H01L21/66
CPC分类号： G01Q60/46 , B32B37/18 , B32B38/10 , C23F1/00 , G01B21/20 , G01Q30/20 , H01L22/14
摘要： A method is provided for fabricating a semiconductor testing structure. The method includes providing a substrate having a to-be-tested device structure formed on a surface of the substrate, a dielectric layer formed on the surface of the substrate and a surface of the to-be-tested structure, and conductive structures and an insulation layer electrically insulating the conductive structures formed on a first surface of the dielectric layer. The method also includes planarizing the conductive structures and the insulation layer to remove the conductive structures and the insulation layer until the first surface of the dielectric layer is exposed; and bonding the first surface of the dielectric layer with a dummy wafer by an adhesive layer. Further, the method includes removing the substrate to expose a second surface relative to the first surface of the dielectric layer of the dielectric layer and a surface of the to-be-tested device structure.
摘要翻译：提供了制造半导体测试结构的方法。该方法包括提供具有形成在基板的表面上的被测试的器件结构的基板，形成在基板的表面上的电介质层和待测试结构的表面，以及导电结构和绝缘层使形成在电介质层的第一表面上的导电结构电绝缘。该方法还包括平坦化导电结构和绝缘层以去除导电结构和绝缘层，直到电介质层的第一表面露出为止; 以及通过粘合剂层将所述电介质层的第一表面与虚设晶片接合。此外，该方法包括去除衬底以暴露相对于电介质层的电介质层的第一表面的第二表面和待测试器件结构的表面。

9. 发明申请

US20150169997A1 APPARATUS AND METHOD FOR CORRELATING IMAGES OF A PHOTOLITHOGRAPHIC MASK 有权
标题翻译：用于相关图像掩模图像的装置和方法
公开(公告)号：US20150169997A1
公开(公告)日：2015-06-18
申请号：US14568681
申请日：2014-12-12
申请人： Carl Zeiss SMS GmbH
发明人： Dieter Weber , Markus Waiblinger
IPC分类号： G06K9/62 , G01Q60/00 , G01Q60/24 , G01Q60/10 , G01Q60/50 , G06T7/40 , G01Q60/46 , G06T7/00 , G06T11/60 , G02B21/00 , G06K9/46 , H01J37/26 , G01Q60/18
CPC分类号： G06T7/40 , G01Q30/02 , G01Q30/04 , G02B21/008 , G06K2009/4666 , G06T7/0008 , G06T11/60 , H01J37/26 , H01J2237/2583 , H01J2237/2817 , H01J2237/31744
摘要： An apparatus for correlating at least two images of a photolithographic mask that at least partially overlap, in which the apparatus includes a correlation unit that is provided to use at least one random variation, which is present in the at least two images, of at least one structural element of the photolithographic mask for the correlation of the at least two images.
摘要翻译：一种用于将至少两个至少部分重叠的光刻掩模的至少两个图像相关联的装置，其中所述装置包括提供用于至少两个图像中存在的至少一个随机变化的相关单元，所述光刻掩模的一个结构元件用于所述至少两个图像的相关。

10. 发明申请

US20050082474A1 MEMS differential actuated nano probe and method for fabrication 失效
标题翻译： MEMS微分致动纳米探针和制造方法
公开(公告)号：US20050082474A1
公开(公告)日：2005-04-21
申请号：US10795407
申请日：2004-03-09
申请人： Shih-Yi Wen , Hsiao-Wen Lee , Jui-Ping Weng , Ming-Hung Chen
发明人： Shih-Yi Wen , Hsiao-Wen Lee , Jui-Ping Weng , Ming-Hung Chen
IPC分类号： G01Q60/18 , G01Q60/24 , G01Q60/46 , G01Q60/50 , G01Q70/16 , G12B21/20
CPC分类号： G01Q10/045 , G01Q70/10 , Y10S977/872
摘要： A MEMS differential actuated nano probe includes four suspension beams arranged in parallel, a connecting base connecting to the suspension beams, a nano probe. Two of the suspension beams elongate due to thermal expansion to allow the deflection of the probe. By heating the suspension beams at different positions, the MEMS differential actuated nano probe can move in two directions with two degrees of freedom. The deflection of the MEMS differential actuated nano probe can be also achieved in piezoelectric or electrostatic way.
摘要翻译： MEMS差分致动纳米探针包括平行布置的四个悬架梁，连接到悬架梁的连接底座，纳米探针。悬挂梁中的两个由于热膨胀而伸长以允许探针的偏转。通过将悬架梁加热到不同位置，MEMS微分致动纳米探针可以在两个方向上以两个自由度移动。 MEMS差分致动纳米探针的偏转也可以以压电或静电方式实现。

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