专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090098483A1 POSITIVE RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN 有权
标题翻译：积极抗性组合物和形成耐药模式的方法
公开(公告)号：US20090098483A1
公开(公告)日：2009-04-16
申请号：US11913308
申请日：2006-04-07
申请人： Yohei Kinoshita , Makiko Irie , Waki Ohkubo , Yusuke Nakagawa , Shinichi Hidesaka
发明人： Yohei Kinoshita , Makiko Irie , Waki Ohkubo , Yusuke Nakagawa , Shinichi Hidesaka
IPC分类号： G03F7/028 , G03F7/20
CPC分类号： G03F7/0397 , C08F220/28 , G03F7/0046 , Y10S430/111 , Y10S430/12 , Y10S430/121 , Y10S430/122 , Y10S430/123 , Y10S430/126
摘要： A positive resist composition and method for forming a resist pattern are provided which enable a resist pattern with excellent shape to be obtained. The resist composition includes a resin component (A) which exhibits increased alkali solubility under action of acid, an acid-generator component (B) which generates acid upon irradiation and an organic solvent (S) in which the components (A) and (B) are dissolved, the resin component (A) including a copolymer (A1) containing: a structural unit (a1) having an acetal-type protected group, a structural unit (a2) derived from an acrylate ester having a lactone-containing polycyclic group, which is represented by general formula (a2-1) shown below; and a structural unit (a3) derived from an acrylate ester having a polar group-containing aliphatic hydrocarbon group: wherein R represents a hydrogen atom, a fluorine atom, a lower alkyl group or a fluorinated lower alkyl group; R′ represents a hydrogen atom, a lower alkyl group or an alkoxy group of 1 to 5 carbon atoms; and m represents 0 or 1.
摘要翻译：提供了一种形成抗蚀剂图案的正型抗蚀剂组合物和方法，其能够获得具有优异形状的抗蚀剂图案。抗蚀剂组合物包括在酸作用下表现出增加的碱溶性的树脂组分（A），在照射时产生酸的酸产生剂组分（B）和其中组分（A）和（B）的有机溶剂）的树脂组分（A）包含共聚物（A1），其包含：具有缩醛型保护基的结构单元（a1），源自具有含内酯多环基团的丙烯酸酯的结构单元（a2），由下述通式（a2-1）表示; 和衍生自具有极性基团的脂族烃基的丙烯酸酯的结构单元（a3）：其中R表示氢原子，氟原子，低级烷基或氟化低级烷基; R'表示氢原子，低级烷基或碳原子数1〜5的烷氧基。 m表示0或1。

2. 发明授权

US07192687B2 Positive resist composition and method of forming resist pattern using same 失效
标题翻译：正型抗蚀剂组合物和使用其形成抗蚀剂图案的方法
公开(公告)号：US07192687B2
公开(公告)日：2007-03-20
申请号：US10931958
申请日：2004-09-01
申请人： Kazuyuki Nitta , Waki Ohkubo , Satoshi Shimatani
发明人： Kazuyuki Nitta , Waki Ohkubo , Satoshi Shimatani
IPC分类号： G03F7/40 , G03F7/004
CPC分类号： G03F7/0392 , G03F7/0045
摘要： A positive resist composition capable of realizing an improvement in resolution, a reduction in LER, and a reduction in the level of defects, as well as a method of forming a resist pattern. This composition and method provide: a positive resist composition comprising a resin component (A) containing a structural unit (a1) derived from an (α-methyl)hydroxystyrene, represented by a general formula (1) shown below, and a structural unit (a2) represented by a general formula (2) shown below, wherein the solubility rate of the component (A) in a 2.38% by weight aqueous solution of TMAH (tetramethylammonium hydroxide) is within a range from 100 to 1000 Å/second, as well as a method of forming a resist pattern that uses such a composition; (wherein in the general formulas (1) and (2), R represents a hydrogen atom or a methyl group).
摘要翻译：能够实现分辨率提高，LER降低和缺陷水平降低的正型抗蚀剂组合物以及形成抗蚀剂图案的方法。该组合物和方法提供：包含含有由（α-甲基）羟基苯乙烯衍生的结构单元（a1）的树脂组分（A）的正性抗蚀剂组合物，由下述通式（1）表示，和结构单元（ a2），其中组分（A）在2.38重量％的TMAH（氢氧化四甲铵）水溶液中的溶解度在100至1000埃/秒的范围内，如以及形成使用这种组合物的抗蚀剂图案的方法; （其中在通式（1）和（2）中，R表示氢原子或甲基）。

3. 发明授权

US06180313B2 Poly (disulfonyl diazomethane) compound and positive-working chemical-amplification photoresist composition containing the same 有权
标题翻译：聚（二磺酰基重氮甲烷）化合物和含有该化合物的正性化学扩增光致抗蚀剂组合物
公开(公告)号：US06180313B2
公开(公告)日：2001-01-30
申请号：US09384284
申请日：1999-08-27
申请人： Hiroto Yukawa , Waki Ohkubo , Kouki Tamura
发明人： Hiroto Yukawa , Waki Ohkubo , Kouki Tamura
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , C07C317/28 , C07C2601/14 , G03F7/0163 , Y10S430/106 , Y10S430/12 , Y10S430/122 , Y10S430/124
摘要： Disclosed is a poly(disulfonyl diazomethane) compound as a class of novel compounds represented by the general formula R-SO2-C(N2)-SO2&Brketopenst; Z-SO2-C(N2)-SO2&Brketclosest; nR in which the subscript n is 1 to 5, each R is a monovalent hydrocarbon group and Z is a divalent hydrocarbon group. The invention also discloses a chemical-amplification positive-working photoresist composition which comprises the above mentioned poly(disulfonyl diazomethane) compound as the radiation-sensitive acid-generating agent in combination with a film-forming resin capable of being imparted with increased solubility in an aqueous alkaline solution by the interaction with an acid, such as a polyhydroxystyrene resin of which a part of the hydroxyl groups are substituted by acid-dissociable solubility-reducing groups, e.g., tert-butoxycarbonyl groups.
摘要翻译：公开了一种由下式n为1〜5的一般形式表示的一类新型化合物的聚（二磺酰基重氮甲烷）化合物，各R为一价烃基，Z为二价烃基。本发明还公开了一种化学扩增正性光致抗蚀剂组合物，其包含上述聚（二磺酰基重氮甲烷）化合物作为辐射敏感性酸产生剂与能够赋予溶解度增加的成膜树脂通过与酸相互作用的碱性水溶液，例如其一部分羟基被酸解离的溶解性降低基团例如叔丁氧基羰基取代的多羟基苯乙烯树脂。

4. 发明授权

US6153733A (Disulfonyl diazomethane compounds) 有权
标题翻译：聚（二磺酰基重氮甲烷）化合物
公开(公告)号：US6153733A
公开(公告)日：2000-11-28
申请号：US310858
申请日：1999-05-13
申请人： Hiroto Yukawa , Waki Ohkubo , Kouki Tamura , Toshiharu Shimamaki , Kei Mori
发明人： Hiroto Yukawa , Waki Ohkubo , Kouki Tamura , Toshiharu Shimamaki , Kei Mori
IPC分类号： C07C317/28 , G03F7/004 , G03F7/016 , C07C245/14
CPC分类号： G03F7/0045 , C07C317/28 , G03F7/0163 , C07C2101/14 , Y10S430/106 , Y10S430/12 , Y10S430/122 , Y10S430/124
摘要： Disclosed is a poly(disulfonyl diazomethane) compound as a class of novel compounds represented by the general formula ##STR1## in which the subscript n is 1 to 5, each R is a monovalent hydrocarbon group and Z is a divalent hydrocarbon group. The invention also discloses a chemical-amplification positive-working photoresist composition which comprises the above mentioned poly(disulfonyl diazomethane) compound as the radiation-sensitive acid-generating agent in combination with a film-forming resin capable of being imparted with increased solubility in an aqueous alkaline solution by the interaction with an acid, such as a polyhydroxystyrene resin of which a part of the hydroxyl groups are substituted by acid-dissociable solubility-reducing groups, e.g., tert-butoxycarbonyl groups.
摘要翻译：公开了作为一类由下式表示的新型化合物的聚（二磺酰基重氮甲烷）化合物，其中下标n为1至5，每个R为单价烃基，Z为二价烃基。本发明还公开了一种化学扩增正性光致抗蚀剂组合物，其包含上述聚（二磺酰基重氮甲烷）化合物作为辐射敏感性酸产生剂与能够赋予溶解度增加的成膜树脂通过与酸相互作用的碱性水溶液，例如其一部分羟基被酸解离的溶解性降低基团例如叔丁氧基羰基取代的多羟基苯乙烯树脂。

5. 发明授权

US07858286B2 Positive resist composition and method for forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07858286B2
公开(公告)日：2010-12-28
申请号：US11913308
申请日：2006-04-07
申请人： Yohei Kinoshita , Makiko Irie , Waki Ohkubo , Yusuke Nakagawa , Shinichi Hidesaka
发明人： Yohei Kinoshita , Makiko Irie , Waki Ohkubo , Yusuke Nakagawa , Shinichi Hidesaka
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0397 , C08F220/28 , G03F7/0046 , Y10S430/111 , Y10S430/12 , Y10S430/121 , Y10S430/122 , Y10S430/123 , Y10S430/126
摘要： A positive resist composition and method for forming a resist pattern are provided which enable a resist pattern with excellent shape to be obtained. The resist composition includes a resin component (A) which exhibits increased alkali solubility under action of acid, an acid-generator component (B) which generates acid upon irradiation and an organic solvent (S) in which the components (A) and (B) are dissolved, the resin component (A) including a copolymer (A1) containing: a structural unit (a1) having an acetal-type protected group, a structural unit (a2) derived from an acrylate ester having a lactone-containing polycyclic group, which is represented by general formula (a2-1) shown below; and a structural unit (a3) derived from an acrylate ester having a polar group-containing aliphatic hydrocarbon group: wherein R represents a hydrogen atom, a fluorine atom, a lower alkyl group or a fluorinated lower alkyl group; R′ represents a hydrogen atom, a lower alkyl group or an alkoxy group of 1 to 5 carbon atoms; and m represents 0 or 1.
摘要翻译：提供了一种形成抗蚀剂图案的正型抗蚀剂组合物和方法，其能够获得具有优异形状的抗蚀剂图案。抗蚀剂组合物包括在酸作用下表现出增加的碱溶性的树脂组分（A），在照射时产生酸的酸产生剂组分（B）和其中组分（A）和（B）的有机溶剂）的树脂组分（A）包含共聚物（A1），其包含：具有缩醛型保护基的结构单元（a1），源自具有含内酯多环基团的丙烯酸酯的结构单元（a2），由下述通式（a2-1）表示; 和衍生自具有极性基团的脂族烃基的丙烯酸酯的结构单元（a3）：其中R表示氢原子，氟原子，低级烷基或氟化低级烷基; R'表示氢原子，低级烷基或碳原子数1〜5的烷氧基; m表示0或1。

6. 发明授权

US07781144B2 Positive resist composition and resist pattern forming method 有权
标题翻译：正抗蚀剂组合物和抗蚀剂图案形成方法
公开(公告)号：US07781144B2
公开(公告)日：2010-08-24
申请号：US11914509
申请日：2006-04-18
申请人： Yohei Kinoshita , Waki Ohkubo , Yusuke Nakagawa , Shinichi Hidesaka , Makiko Irie
发明人： Yohei Kinoshita , Waki Ohkubo , Yusuke Nakagawa , Shinichi Hidesaka , Makiko Irie
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0397 , C08F220/28 , G03F7/0045 , Y10S430/111 , Y10S430/12 , Y10S430/121 , Y10S430/122 , Y10S430/123 , Y10S430/126
摘要： The present invention is a positive resist composition and a resist pattern forming method including a resin component (A) which has a polymer compound (A1) having a structural units (a1) including an acetal type acid dissociable, dissolution inhibiting group, a structural unit (a2) derived from an acrylate ester having a lactone-containing polycyclic group, and a structural unit (a3) derived from an acrylate ester having a polar group-containing aliphatic hydrocarbon group, and an acid generator component (B) having an onium salt-based acid generator (B1) having a cation portion represented by a general formula (b-1) shown below [wherein, R11 represents an alkyl group, an alkoxy group, a halogen atom or a hydroxyl group; R12 to R13 each represents, independently, an aryl group or the alkyl group that may have substituent group; n′ represents either 0 or an integer from 1 to 3].
摘要翻译：本发明是一种正型抗蚀剂组合物和抗蚀剂图案形成方法，其包括具有包含缩醛型酸解离，溶解抑制基团，结构单元（a1）的结构单元（a1）的高分子化合物（A1）的树脂组分（A）衍生自具有含内酯多环基团的丙烯酸酯的衍生物（a2）和衍生自具有极性基团的脂族烃基的丙烯酸酯的结构单元（a3）和具有鎓盐的酸产生剂组分（B）的具有由下述通式（b-1）表示的阳离子部分的酸产生剂（B1）[其中，R 11表示烷基，烷氧基，卤素原子或羟基; R 12〜R 13各自独立地表示可以具有取代基的芳基或烷基; n'表示0或1〜3的整数]。

7. 发明申请

US20090035698A1 POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD 有权
标题翻译：积极抵抗组合和阻力图形成方法
公开(公告)号：US20090035698A1
公开(公告)日：2009-02-05
申请号：US11914509
申请日：2006-04-18
申请人： Yohei Kinoshita , Waki Ohkubo , Yusuke Nakagawa , Shinichi Hidesaka , Makiko Irie
发明人： Yohei Kinoshita , Waki Ohkubo , Yusuke Nakagawa , Shinichi Hidesaka , Makiko Irie
IPC分类号： G03F7/027 , G03F7/20
CPC分类号： G03F7/0397 , C08F220/28 , G03F7/0045 , Y10S430/111 , Y10S430/12 , Y10S430/121 , Y10S430/122 , Y10S430/123 , Y10S430/126
摘要： The present invention is a positive resist composition and a resist pattern forming method including a resin component (A) which has a polymer compound (A1) having a structural units (a1) including an acetal type acid dissociable, dissolution inhibiting group, a structural unit (a2) derived from an acrylate ester having a lactone-containing polycyclic group, and a structural unit (a3) derived from an acrylate ester having a polar group-containing aliphatic hydrocarbon group, and an acid generator component (B) having an onium salt-based acid generator (B1) having a cation portion represented by a general formula (b-1) shown below [wherein, R11 represents an alkyl group, an alkoxy group, a halogen atom or a hydroxyl group; R12 to R13 each represents, independently, an aryl group or the alkyl group that may have substituent group; n′ represents either 0 or an integer from 1 to 3].
摘要翻译：本发明是一种正型抗蚀剂组合物和抗蚀剂图案形成方法，其包括具有包含缩醛型酸解离，溶解抑制基团，结构单元（a1）的结构单元（a1）的高分子化合物（A1）的树脂组分（A）衍生自具有含内酯多环基团的丙烯酸酯的衍生物（a2）和衍生自具有极性基团的脂族烃基的丙烯酸酯的结构单元（a3）和具有鎓盐的酸产生剂组分（B）的具有由下述通式（b-1）表示的阳离子部分的酸产生剂（B1）[其中，R 11表示烷基，烷氧基，卤素原子或羟基; R 12〜R 13各自独立地表示可以具有取代基的芳基或烷基; n'表示0或1〜3的整数]。

8. 发明申请

US20050079445A1 Positive resist composition and method of forming resist pattern using same 失效
标题翻译：正型抗蚀剂组合物和使用其形成抗蚀剂图案的方法
公开(公告)号：US20050079445A1
公开(公告)日：2005-04-14
申请号：US10931958
申请日：2004-09-01
申请人： Kazuyuki Nitta , Waki Ohkubo , Satoshi Shimatani
发明人： Kazuyuki Nitta , Waki Ohkubo , Satoshi Shimatani
IPC分类号： C08F212/14 , G03C1/76 , G03F7/004 , G03F7/022 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0392 , G03F7/0045
摘要： A positive resist composition capable of realizing an improvement in resolution, a reduction in LER, and a reduction in the level of defects, as well as a method of forming a resist pattern. This composition and method provide: a positive resist composition comprising a resin component (A) containing a structural unit (a1) derived from an (α-methyl)hydroxystyrene, represented by a general formula (1) shown below, and a structural unit (a2) represented by a general formula (2) shown below, wherein the solubility rate of the component (A) in a 2.38% by weight aqueous solution of TMAH (tetramethylammonium hydroxide) is within a range from 100 to 1000 Å/second, as well as a method of forming a resist pattern that uses such a composition. (wherein in the general formulas (1) and (2), R represents a hydrogen atom or a methyl group)
摘要翻译：能够实现分辨率提高，LER降低和缺陷水平降低的正型抗蚀剂组合物以及形成抗蚀剂图案的方法。该组合物和方法提供：包含含有由（α-甲基）羟基苯乙烯衍生的结构单元（a1）的树脂组分（A）的正性抗蚀剂组合物，由下述通式（1）表示，和结构单元（ a2），其中组分（A）在2.38重量％的TMAH（氢氧化四甲铵）水溶液中的溶解度在100至1000埃/秒的范围内，如以及形成使用这种组合物的抗蚀剂图案的方法。（其中在通式（1）和（2）中，R表示氢原子或甲基）

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式