专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090098483A1 POSITIVE RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN 有权
标题翻译：积极抗性组合物和形成耐药模式的方法
公开(公告)号：US20090098483A1
公开(公告)日：2009-04-16
申请号：US11913308
申请日：2006-04-07
申请人： Yohei Kinoshita , Makiko Irie , Waki Ohkubo , Yusuke Nakagawa , Shinichi Hidesaka
发明人： Yohei Kinoshita , Makiko Irie , Waki Ohkubo , Yusuke Nakagawa , Shinichi Hidesaka
IPC分类号： G03F7/028 , G03F7/20
CPC分类号： G03F7/0397 , C08F220/28 , G03F7/0046 , Y10S430/111 , Y10S430/12 , Y10S430/121 , Y10S430/122 , Y10S430/123 , Y10S430/126
摘要： A positive resist composition and method for forming a resist pattern are provided which enable a resist pattern with excellent shape to be obtained. The resist composition includes a resin component (A) which exhibits increased alkali solubility under action of acid, an acid-generator component (B) which generates acid upon irradiation and an organic solvent (S) in which the components (A) and (B) are dissolved, the resin component (A) including a copolymer (A1) containing: a structural unit (a1) having an acetal-type protected group, a structural unit (a2) derived from an acrylate ester having a lactone-containing polycyclic group, which is represented by general formula (a2-1) shown below; and a structural unit (a3) derived from an acrylate ester having a polar group-containing aliphatic hydrocarbon group: wherein R represents a hydrogen atom, a fluorine atom, a lower alkyl group or a fluorinated lower alkyl group; R′ represents a hydrogen atom, a lower alkyl group or an alkoxy group of 1 to 5 carbon atoms; and m represents 0 or 1.
摘要翻译：提供了一种形成抗蚀剂图案的正型抗蚀剂组合物和方法，其能够获得具有优异形状的抗蚀剂图案。抗蚀剂组合物包括在酸作用下表现出增加的碱溶性的树脂组分（A），在照射时产生酸的酸产生剂组分（B）和其中组分（A）和（B）的有机溶剂）的树脂组分（A）包含共聚物（A1），其包含：具有缩醛型保护基的结构单元（a1），源自具有含内酯多环基团的丙烯酸酯的结构单元（a2），由下述通式（a2-1）表示; 和衍生自具有极性基团的脂族烃基的丙烯酸酯的结构单元（a3）：其中R表示氢原子，氟原子，低级烷基或氟化低级烷基; R'表示氢原子，低级烷基或碳原子数1〜5的烷氧基。 m表示0或1。

2. 发明授权

US07858286B2 Positive resist composition and method for forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07858286B2
公开(公告)日：2010-12-28
申请号：US11913308
申请日：2006-04-07
申请人： Yohei Kinoshita , Makiko Irie , Waki Ohkubo , Yusuke Nakagawa , Shinichi Hidesaka
发明人： Yohei Kinoshita , Makiko Irie , Waki Ohkubo , Yusuke Nakagawa , Shinichi Hidesaka
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0397 , C08F220/28 , G03F7/0046 , Y10S430/111 , Y10S430/12 , Y10S430/121 , Y10S430/122 , Y10S430/123 , Y10S430/126
摘要： A positive resist composition and method for forming a resist pattern are provided which enable a resist pattern with excellent shape to be obtained. The resist composition includes a resin component (A) which exhibits increased alkali solubility under action of acid, an acid-generator component (B) which generates acid upon irradiation and an organic solvent (S) in which the components (A) and (B) are dissolved, the resin component (A) including a copolymer (A1) containing: a structural unit (a1) having an acetal-type protected group, a structural unit (a2) derived from an acrylate ester having a lactone-containing polycyclic group, which is represented by general formula (a2-1) shown below; and a structural unit (a3) derived from an acrylate ester having a polar group-containing aliphatic hydrocarbon group: wherein R represents a hydrogen atom, a fluorine atom, a lower alkyl group or a fluorinated lower alkyl group; R′ represents a hydrogen atom, a lower alkyl group or an alkoxy group of 1 to 5 carbon atoms; and m represents 0 or 1.
摘要翻译：提供了一种形成抗蚀剂图案的正型抗蚀剂组合物和方法，其能够获得具有优异形状的抗蚀剂图案。抗蚀剂组合物包括在酸作用下表现出增加的碱溶性的树脂组分（A），在照射时产生酸的酸产生剂组分（B）和其中组分（A）和（B）的有机溶剂）的树脂组分（A）包含共聚物（A1），其包含：具有缩醛型保护基的结构单元（a1），源自具有含内酯多环基团的丙烯酸酯的结构单元（a2），由下述通式（a2-1）表示; 和衍生自具有极性基团的脂族烃基的丙烯酸酯的结构单元（a3）：其中R表示氢原子，氟原子，低级烷基或氟化低级烷基; R'表示氢原子，低级烷基或碳原子数1〜5的烷氧基; m表示0或1。

3. 发明授权

US07781144B2 Positive resist composition and resist pattern forming method 有权
标题翻译：正抗蚀剂组合物和抗蚀剂图案形成方法
公开(公告)号：US07781144B2
公开(公告)日：2010-08-24
申请号：US11914509
申请日：2006-04-18
申请人： Yohei Kinoshita , Waki Ohkubo , Yusuke Nakagawa , Shinichi Hidesaka , Makiko Irie
发明人： Yohei Kinoshita , Waki Ohkubo , Yusuke Nakagawa , Shinichi Hidesaka , Makiko Irie
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0397 , C08F220/28 , G03F7/0045 , Y10S430/111 , Y10S430/12 , Y10S430/121 , Y10S430/122 , Y10S430/123 , Y10S430/126
摘要： The present invention is a positive resist composition and a resist pattern forming method including a resin component (A) which has a polymer compound (A1) having a structural units (a1) including an acetal type acid dissociable, dissolution inhibiting group, a structural unit (a2) derived from an acrylate ester having a lactone-containing polycyclic group, and a structural unit (a3) derived from an acrylate ester having a polar group-containing aliphatic hydrocarbon group, and an acid generator component (B) having an onium salt-based acid generator (B1) having a cation portion represented by a general formula (b-1) shown below [wherein, R11 represents an alkyl group, an alkoxy group, a halogen atom or a hydroxyl group; R12 to R13 each represents, independently, an aryl group or the alkyl group that may have substituent group; n′ represents either 0 or an integer from 1 to 3].
摘要翻译：本发明是一种正型抗蚀剂组合物和抗蚀剂图案形成方法，其包括具有包含缩醛型酸解离，溶解抑制基团，结构单元（a1）的结构单元（a1）的高分子化合物（A1）的树脂组分（A）衍生自具有含内酯多环基团的丙烯酸酯的衍生物（a2）和衍生自具有极性基团的脂族烃基的丙烯酸酯的结构单元（a3）和具有鎓盐的酸产生剂组分（B）的具有由下述通式（b-1）表示的阳离子部分的酸产生剂（B1）[其中，R 11表示烷基，烷氧基，卤素原子或羟基; R 12〜R 13各自独立地表示可以具有取代基的芳基或烷基; n'表示0或1〜3的整数]。

4. 发明申请

US20090035698A1 POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD 有权
标题翻译：积极抵抗组合和阻力图形成方法
公开(公告)号：US20090035698A1
公开(公告)日：2009-02-05
申请号：US11914509
申请日：2006-04-18
申请人： Yohei Kinoshita , Waki Ohkubo , Yusuke Nakagawa , Shinichi Hidesaka , Makiko Irie
发明人： Yohei Kinoshita , Waki Ohkubo , Yusuke Nakagawa , Shinichi Hidesaka , Makiko Irie
IPC分类号： G03F7/027 , G03F7/20
CPC分类号： G03F7/0397 , C08F220/28 , G03F7/0045 , Y10S430/111 , Y10S430/12 , Y10S430/121 , Y10S430/122 , Y10S430/123 , Y10S430/126
摘要： The present invention is a positive resist composition and a resist pattern forming method including a resin component (A) which has a polymer compound (A1) having a structural units (a1) including an acetal type acid dissociable, dissolution inhibiting group, a structural unit (a2) derived from an acrylate ester having a lactone-containing polycyclic group, and a structural unit (a3) derived from an acrylate ester having a polar group-containing aliphatic hydrocarbon group, and an acid generator component (B) having an onium salt-based acid generator (B1) having a cation portion represented by a general formula (b-1) shown below [wherein, R11 represents an alkyl group, an alkoxy group, a halogen atom or a hydroxyl group; R12 to R13 each represents, independently, an aryl group or the alkyl group that may have substituent group; n′ represents either 0 or an integer from 1 to 3].
摘要翻译：本发明是一种正型抗蚀剂组合物和抗蚀剂图案形成方法，其包括具有包含缩醛型酸解离，溶解抑制基团，结构单元（a1）的结构单元（a1）的高分子化合物（A1）的树脂组分（A）衍生自具有含内酯多环基团的丙烯酸酯的衍生物（a2）和衍生自具有极性基团的脂族烃基的丙烯酸酯的结构单元（a3）和具有鎓盐的酸产生剂组分（B）的具有由下述通式（b-1）表示的阳离子部分的酸产生剂（B1）[其中，R 11表示烷基，烷氧基，卤素原子或羟基; R 12〜R 13各自独立地表示可以具有取代基的芳基或烷基; n'表示0或1〜3的整数]。

5. 发明申请

US20120134890A1 OZONE GENERATOR 审中-公开
标题翻译：臭氧发生器
公开(公告)号：US20120134890A1
公开(公告)日：2012-05-31
申请号：US13380752
申请日：2010-06-24
申请人： Yohei Kinoshita , Takashi Sakugawa , Hidenori Akiyama
发明人： Yohei Kinoshita , Takashi Sakugawa , Hidenori Akiyama
IPC分类号： B01J19/08
CPC分类号： C01B13/115 , C01B2201/90
摘要： An ozone generator is provided with a pulse generator (110) that at least includes pulse generation means for generating a pulse voltage and a magnetic switch (SI2) adjusting pulse width of the generated pulse voltage, and a discharge reactor that is provided with a plurality of electrodes to which the pulse voltage for which the pulse width has been adjusted is applied, and that generates a discharge between the plurality of electrodes as a result of the pulse voltage, for which the pulse width has been adjusted, being applied thereto, and also generates ozone as a result of a raw material gas containing oxygen being supplied from the outside to between the electrodes where the discharge has been generated.
摘要翻译：臭氧发生器设置有脉冲发生器（110），脉冲发生器（110）至少包括用于产生脉冲电压的脉冲发生装置和调整产生的脉冲电压的脉冲宽度的磁性开关（S12），以及设置有多个施加脉冲宽度已被调整的脉冲电压的电极，由于施加了脉冲宽度的脉冲电压而在多个电极之间产生放电，并且也由于从外部向生成了放电的电极之间供给氧的原料气体而产生臭氧。

6. 发明申请

US20090068588A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：正电阻组合物和形成电阻图案的方法
公开(公告)号：US20090068588A1
公开(公告)日：2009-03-12
申请号：US11816272
申请日：2005-12-13
申请人： Yohei Kinoshita , Isao Hirano
发明人： Yohei Kinoshita , Isao Hirano
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , Y10S430/111 , Y10S430/122 , Y10S430/123
摘要： A positive resist composition that includes a resin component (A) that exhibits increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure to radiation, wherein the component (A) includes a structural unit (a1) represented by a general formula (a1-2) or (a1-4), a structural unit (a2) derived from an acrylate ester that contains a lactone-containing monocyclic or polycyclic group, and a structural unit (a3), which is different from the structural unit (a1) and the structural unit (a2), and is derived from an acrylate ester that contains an aliphatic cyclic group-containing non-acid-dissociable, dissolution-inhibiting group and contains no polar groups, and the component (B) includes an onium salt (B1) having an anion portion represented by a formula: R41—SO3−.
摘要翻译：包含在酸作用下表现出增加的碱溶性的树脂组分（A）的阳性抗蚀剂组合物和在暴露于辐射时产生酸的酸产生剂组分（B），其中组分（A）包括结构单元（ a1）由（a1-2）或（a1-4）表示的结构单元（a2），由含有内酯单环或多环基团的丙烯酸酯衍生的结构单元（a2）和结构单元（a3）与结构单元（a1）和结构单元（a2）不同，并且衍生自含有脂族环状基团的非酸解离性，溶解抑制基团且不含极性基团的丙烯酸酯，并且组分（B）包括具有由式R 41 -SO 3 - 表示的阴离子部分的鎓盐（B1）。

7. 发明申请

US20080166655A1 Polymer Compound, Photoresist Composition Including the Polymer Compound, and Resist Pattern Formation Method 有权
标题翻译：高分子化合物，包含聚合物化合物的光致抗蚀剂组合物和抗蚀剂图案形成方法
公开(公告)号：US20080166655A1
公开(公告)日：2008-07-10
申请号：US10589681
申请日：2005-01-28
申请人： Toshiyuki Ogata , Syogo Matsumaru , Yohei Kinoshita , Hideo Hada , Daiju Shiono , Hiroaki Shimizu , Naotaka Kubota
发明人： Toshiyuki Ogata , Syogo Matsumaru , Yohei Kinoshita , Hideo Hada , Daiju Shiono , Hiroaki Shimizu , Naotaka Kubota
IPC分类号： G03F7/004 , C08G65/34 , C07C69/533 , C08G63/00 , G03F7/26 , C07C69/52
CPC分类号： G03F7/0397 , C07C69/54 , C07C2603/74 , C08F220/28 , C08F290/06 , C08F290/061 , C09D133/14 , G03F7/0046 , Y10S430/108 , Y10S430/111
摘要： The present invention provides a polymer compound which can constitute a photoresist composition which is capable of having an excellent resolution, forming a fine pattern with a good rectangularity, obtaining favorable resist characteristics even when acid strength of a acid generated from an acid generator is weak, and having favorable sensitivity; a photoresist composition including the polymer compound; and a resist pattern formation method using the photoresist composition. The photoresist composition and the resist pattern formation method use the polymer compound including an alkali soluble group (i), wherein the alkali soluble group (i) is at least one substituent group selected from an alcoholic hydroxyl group, a carboxyl group, or a phenolic hydroxyl group, and the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): —CH2—OCH2nR1 (1) (wherein R1 represents a cycloaliphatic group which contains no more than 20 carbon atoms and may contain an oxygen atom, a nitrogen atom, a sulfur atom, or a halogen atom, and n represents 0 or an integer of 1 to 5.).
摘要翻译：本发明提供一种高分子化合物，其可以构成光刻胶组合物，其能够具有优异的分辨率，形成具有良好矩形性的精细图案，即使酸产生器产生的酸的酸强弱也能获得良好的抗蚀特性，并具有良好的灵敏度; 包含该高分子化合物的光致抗蚀剂组合物; 以及使用光致抗蚀剂组合物的抗蚀剂图案形成方法。光致抗蚀剂组合物和抗蚀剂图案形成方法使用包含碱溶性基团（i）的高分子化合物，其中碱溶性基团（i）为选自醇羟基，羧基或酚类中的至少一个取代基羟基，取代基被通过通式（1）表示的酸解离的溶解抑制基团（ii）保护：<？in-line-formula description =“In-line Formulas”end =“lead”？ > -CH 2 - - - - - - - - - - - - - - （2）（其中R 1表示含有不多于20个碳原子的脂环族基团，并且可以含有氧原子，氮原子，硫原子或卤素原子，n表示0或1〜5的整数。

8. 发明授权

US06818380B2 Method for the preparation of a semiconductor device 有权
标题翻译：制备半导体器件的方法
公开(公告)号：US06818380B2
公开(公告)日：2004-11-16
申请号：US10678259
申请日：2003-10-06
申请人： Satoshi Maemori , Kazufumi Sato , Kazuyuki Nitta , Katsumi Oomori , Kazuo Tani , Yohei Kinoshita , Tomotaka Yamada
发明人： Satoshi Maemori , Kazufumi Sato , Kazuyuki Nitta , Katsumi Oomori , Kazuo Tani , Yohei Kinoshita , Tomotaka Yamada
IPC分类号： G03F7004
CPC分类号： G03F7/0392
摘要： The invention discloses an improvement in the photolithographic patterning process of a photoresist layer in the manufacture of semiconductor devices in which occurrence of defects in the patterned resist layer can be greatly suppressed resulting in increased reliability of the semiconductor devices and productivity thereof. The improvement can be accomplished by using a chemical-amplification positive-working photoresist composition which exhibits a rate of film thickness reduction in the range from 0.09 to 1.0 nm/second when the photoresist layer before light-exposure is kept in a 2.38% aqueous solution of tetramethylammonium hydroxide at 23° C. to dissolve away the resist layer.
摘要翻译：本发明公开了在半导体器件的制造中光致抗蚀剂层的光刻图案化工艺的改进，其中可以大大抑制图案化抗蚀剂层中的缺陷的发生，从而提高半导体器件的可靠性及其生产率。可以通过使用化学扩增正性光致抗蚀剂组合物来实现改进，当将曝光前的光致抗蚀剂层保持在2.38％的水溶液中时，其表现出在0.09至1.0nm /秒的范围内的膜厚度降低速率的氢氧化四甲铵在23℃下溶解掉抗蚀剂层。

9. 发明授权

US07723007B2 Polymer compound, photoresist composition including the polymer compound, and resist pattern formation method 有权
标题翻译：高分子化合物，包含高分子化合物的光致抗蚀剂组合物和抗蚀图案形成方法
公开(公告)号：US07723007B2
公开(公告)日：2010-05-25
申请号：US10589681
申请日：2005-01-28
申请人： Toshiyuki Ogata , Syogo Matsumaru , Yohei Kinoshita , Hideo Hada , Daiju Shiono , Hiroaki Shimizu , Naotaka Kubota
发明人： Toshiyuki Ogata , Syogo Matsumaru , Yohei Kinoshita , Hideo Hada , Daiju Shiono , Hiroaki Shimizu , Naotaka Kubota
IPC分类号： G03F7/004 , C07C61/26 , C08F32/08
CPC分类号： G03F7/0397 , C07C69/54 , C07C2603/74 , C08F220/28 , C08F290/06 , C08F290/061 , C09D133/14 , G03F7/0046 , Y10S430/108 , Y10S430/111
摘要： The present invention provides a polymer compound which can constitute a photoresist composition which is capable of having an excellent resolution, forming a fine pattern with a good rectangularity, obtaining favorable resist characteristics even when acid strength of a acid generated from an acid generator is weak, and having favorable sensitivity; a photoresist composition including the polymer compound; and a resist pattern formation method using the photoresist composition. The photoresist composition and the resist pattern formation method use the polymer compound including an alkali soluble group (i), wherein the alkali soluble group (i) is at least one substituent group selected from an alcoholic hydroxyl group, a carboxyl group, or a phenolic hydroxyl group, and the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): —CH2—OCH2nR1 (1) (wherein R1 represents a cycloaliphatic group which contains no more than 20 carbon atoms and may contain an oxygen atom, a nitrogen atom, a sulfur atom, or a halogen atom, and n represents 0 or an integer of 1 to 5).
摘要翻译：本发明提供一种高分子化合物，其可以构成光刻胶组合物，其能够具有优异的分辨率，形成具有良好矩形性的精细图案，即使酸产生器产生的酸的酸强弱也能获得良好的抗蚀特性，并具有良好的灵敏度; 包含该高分子化合物的光致抗蚀剂组合以及使用光致抗蚀剂组合物的抗蚀剂图案形成方法。光致抗蚀剂组合物和抗蚀剂图案形成方法使用包含碱溶性基团（i）的高分子化合物，其中碱溶性基团（i）为选自醇羟基，羧基或酚类中的至少一个取代基羟基，取代基被通过通式（1）表示的酸解离的溶解抑制基团（ⅱ）保护：-CH 2 -OCH 2 n R 1（1）（其中R 1表示含有不多于20个碳的脂环族基团原子，可以含有氧原子，氮原子，硫原子或卤素原子，n表示0或1〜5的整数。

10. 发明申请

US20090068583A1 POSITIVE RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN 有权
标题翻译：积极抗性组合物和形成耐药模式的方法
公开(公告)号：US20090068583A1
公开(公告)日：2009-03-12
申请号：US11911953
申请日：2006-04-07
申请人： Yohei Kinoshita
发明人： Yohei Kinoshita
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0397 , G03F7/0007 , G03F7/0045 , Y10S430/111 , Y10S430/122 , Y10S430/123
摘要： A positive resist composition includes a resin component (A), and an acid generator component (B) which generates an acid upon exposure and includes an acid generator (B1) represented by general formula (B1): (wherein R51 represents a straight chain, branched chain, or cyclic alkyl group, or a straight chain, branched chain, or cyclic fluorinated alkyl group; R52 represents a hydrogen atom, a hydroxyl group, a halogen atom, a straight chain, branched chain, or cyclic alkyl group, a straight chain or branched chain halogenated alkyl group, or a straight chain or branched chain alkoxy group; R53 represents an aryl group which may include a substituent; and n represents an integer from 1 to 3).
摘要翻译：正型抗蚀剂组合物包括树脂组分（A）和暴露时产生酸的酸产生剂组分（B），并且包括由通式（B1）表示的酸产生剂（B1）：（其中R51表示直链，支链或环状烷基，或直链，支链或环状氟代烷基; R52表示氢原子，羟基，卤素原子，直链，支链或环状烷基，直链链或支链卤代烷基，或直链或支链烷氧基; R53表示可以包括取代基的芳基，n表示1〜3的整数）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式