专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120193214A1 PROCESS FOR PURIFYING CHLOROSILANES BY DISTILLATION 有权
标题翻译：通过蒸馏净化氯霉素的方法
公开(公告)号：US20120193214A1
公开(公告)日：2012-08-02
申请号：US13358919
申请日：2012-01-26
申请人： Uwe PAETZOLD , Walter HAECKL , Jan PROCHASKA
发明人： Uwe PAETZOLD , Walter HAECKL , Jan PROCHASKA
IPC分类号： B01D3/10 , B01D3/00
CPC分类号： B01D3/143 , C01B33/037 , C01B33/046 , C01B33/10778
摘要： The invention relates to a process for purifying chlorosilanes by distillation, which includes providing a boron-containing mixture of chlorosilanes containing TCS, DCS and STC and purifying the mixture of chlorosilanes by distillation in a plurality of distillation columns, wherein low-boiling boron compounds are branched off from the distillation columns by means of overhead streams containing boron-enriched DCS and high-boiling boron compounds are branched off by means of a boron-enriched bottom stream containing high boilers.
摘要翻译：本发明涉及一种通过蒸馏纯化氯硅烷的方法，其中包括提供含有TCS，DCS和STC的氯硅烷的含硼混合物，并通过蒸馏在多个蒸馏塔中纯化氯硅烷的混合物，其中低沸点硼化合物为通过含有富含硼的DCS和高沸点硼化合物的塔顶物流从蒸馏塔分支，通过含有高锅炉的富含硼的底部物流分支。

2. 发明授权

US08940264B2 Process for producing polycrystalline silicon 有权
标题翻译：多晶硅生产工艺
公开(公告)号：US08940264B2
公开(公告)日：2015-01-27
申请号：US13219805
申请日：2011-08-29
申请人： Walter Haeckl , Karl Hesse , Wilhelm Hoebold , Reinhard Wolf
发明人： Walter Haeckl , Karl Hesse , Wilhelm Hoebold , Reinhard Wolf
IPC分类号： C01B33/02 , C01B33/027 , C01B33/035 , B01J8/18
CPC分类号： C01B33/02 , B01J8/18 , B01J8/1818 , B01J8/1827 , C01B33/027 , C01B33/035
摘要： The invention provides a process for producing polycrystalline silicon, by introducing reaction gases containing a silicon-containing component and hydrogen into reactors to deposit silicon, wherein a purified condensate from a first deposition process in a first reactor is supplied to a second reactor, and is used in a second deposition process in that second reactor.
摘要翻译：本发明提供了一种生产多晶硅的方法，将含有含硅组分和氢气的反应气体引入反应器以沉积硅，其中将来自第一反应器中的第一沉积工艺的纯化冷凝物供应到第二反应器，并且是在该第二反应器中的第二沉积工艺中使用。

3. 发明申请

US20120060562A1 METHOD FOR PRODUCING THIN SILICON RODS 审中-公开
标题翻译：生产薄硅球的方法
公开(公告)号：US20120060562A1
公开(公告)日：2012-03-15
申请号：US13229098
申请日：2011-09-09
申请人： Hanns WOCHNER , Walter HAECKL
发明人： Hanns WOCHNER , Walter HAECKL
IPC分类号： C03B37/15 , C03C25/68 , C03B37/16
CPC分类号： C01B33/037 , B23K13/015 , B23K13/06 , B23K2101/06 , B23K2103/56 , C01B33/02 , C01B33/035
摘要： The invention relates to a method for producing thin silicon rods (1), including the steps: a) providing a rod of polycrystalline silicon, from which at least two thin rods (11, 12) with a reduced cross section in comparison with the polycrystalline silicon rod are separated; b) cleaning the at least two separated thin rods (11, 12) by treatment with a material-eroding liquid medium; c) welding at least two of the cleaned thin rods (11, 12) to form a longer thin rod (1); and d) packaging the longer thin rod (1) in a tubular film (100).
摘要翻译：本发明涉及一种生产薄硅棒（1）的方法，包括以下步骤：a）提供多晶硅棒，与多晶硅相比，具有减小横截面的至少两个细棒（11,12）硅棒分离; b）通过用材料侵蚀液体介质处理来清洁所述至少两个分离的细棒（11,12）; c）焊接至少两个清洁的细棒（11,12）以形成较长的细棒（1）; 以及d）将较长的细棒（1）包装在管状薄膜（100）中。

4. 发明申请

US20110316128A1 Semiconductor Wafers Of Silicon and Method For Their Production 有权
标题翻译：硅半导体晶片及其制造方法
公开(公告)号：US20110316128A1
公开(公告)日：2011-12-29
申请号：US13225822
申请日：2011-09-06
申请人： Andreas Sattler , Wilfried von Ammon , Martin Weber , Walter Haeckl , Herbert Schmidt
发明人： Andreas Sattler , Wilfried von Ammon , Martin Weber , Walter Haeckl , Herbert Schmidt
IPC分类号： H01L29/02
CPC分类号： C30B29/06 , C30B15/203
摘要： Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein during pulling of the single crystal, heat is delivered to a center of the phase boundary and a radial profile of a ratio V/G from the center to an edge of the phase boundary is controlled, G being the temperature gradient perpendicular to the phase boundary and V being the pull rate. The radial profile of the ratio V/G is controlled so that the effect of thermomechanical stress in the single crystal adjoining the phase boundary, is compensated with respect to creation of intrinsic point defects. The invention also relates to defect-free semiconductor wafers of silicon, which can be produced economically by this method.
摘要翻译：硅的半导体晶片是通过从包含在坩埚中的熔融物中拉出在相边界上生长的单晶并从其中切割半导体晶片而制造的，其中在单晶拉制期间，热被传递到相边界的中心，并且控制从相位边界的中心到边缘的比率V / G的径向轮廓，G是垂直于相边界的温度梯度，V是牵引速率。控制比率V / G的径向轮廓，使得邻接相位边界的单晶中的热机械应力的影响被补偿以产生固有点缺陷。本发明还涉及硅的无缺陷半导体晶片，其可以通过该方法经济地制造。

5. 发明授权

US09089788B2 Process for purifying chlorosilanes by distillation 有权
标题翻译：通过蒸馏纯化氯硅烷的方法
公开(公告)号：US09089788B2
公开(公告)日：2015-07-28
申请号：US13358919
申请日：2012-01-26
申请人： Uwe Paetzold , Walter Haeckl , Jan Prochaska
发明人： Uwe Paetzold , Walter Haeckl , Jan Prochaska
IPC分类号： B01D3/14 , C01B33/107 , C01B33/037 , C01B33/04
CPC分类号： B01D3/143 , C01B33/037 , C01B33/046 , C01B33/10778
摘要： The invention relates to a process for purifying chlorosilanes by distillation, which includes providing a boron-containing mixture of chlorosilanes containing TCS, DCS and STC and purifying the mixture of chlorosilanes by distillation in a plurality of distillation columns, wherein low-boiling boron compounds are branched off from the distillation columns by overhead streams containing boron-enriched DCS and high-boiling boron compounds are branched off by a boron-enriched bottom stream containing high boilers.
摘要翻译：本发明涉及一种通过蒸馏纯化氯硅烷的方法，其中包括提供含有TCS，DCS和STC的氯硅烷的含硼混合物，并通过蒸馏在多个蒸馏塔中纯化氯硅烷的混合物，其中低沸点硼化合物为通过含有富含硼的DCS和高沸点硼化合物的塔顶物流从蒸馏塔分支，通过含有高锅炉的富含硼的底部物流分支。

6. 发明申请

US20130011558A1 PROCESS FOR PRODUCING POLYSILICON 有权
标题翻译：多晶硅生产工艺
公开(公告)号：US20130011558A1
公开(公告)日：2013-01-10
申请号：US13533441
申请日：2012-06-26
申请人： Walter HAECKL , Barbara MUELLER , Robert RING
发明人： Walter HAECKL , Barbara MUELLER , Robert RING
IPC分类号： C23C16/24
CPC分类号： C23C16/24 , C01B33/03 , C01B33/035 , C01B33/10778
摘要： A process for producing polysilicon, includes a) depositing polycrystalline silicon on filaments using reaction gas containing silicon-containing component (SCC) containing trichlorosilane, and hydrogen, wherein molar saturation of SCC based on hydrogen is at least 25%; b) feeding offgas from the deposition into a cooling apparatus, i) wherein condensed offgas components containing SiCl4 are conducted to an apparatus which enables distillative purification of the condensate, and ii) non-condensing components are conducted to an adsorption or desorption unit; c) obtaining a first stream of non-condensing components purified by adsorption and containing hydrogen; and d) obtaining, during adsorption unit regeneration, a second stream of non-condensing components, containing SiCl4 which is then preferably supplied to a converter for conversion of SiCl4 to trichlorosilane. A process for depositing polysilicon on filaments with a reaction gas includes a SCC and hydrogen, wherein molar saturation of SCC based on hydrogen is at least 25%.
摘要翻译：一种生产多晶硅的方法，包括：a）使用含有含三氯硅烷的含硅组分（SCC）和氢气的氢气沉积多晶硅，其中基于氢的SCC的摩尔饱和度至少为25％; b）将沉淀物中的废气进料到冷却装置中，i）其中含有SiCl 4的浓缩废气组分被导入能够对冷凝物进行蒸馏净化的装置，以及ii）将非冷凝组分导入吸附或解吸装置; c）获得通过吸附纯化并含有氢的第一个非冷凝组分物流; 和d）在吸附单元再生期间获得含有SiCl 4的第二非冷凝组分流，然后优选将其供应到用于将SiCl 4转化为三氯硅烷的转化器。用反应气体在长丝上沉积多晶硅的方法包括SCC和氢，其中基于氢的SCC的摩尔饱和度为至少25％。

7. 发明申请

US20120058040A1 PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON 有权
标题翻译：生产多晶硅的工艺
公开(公告)号：US20120058040A1
公开(公告)日：2012-03-08
申请号：US13219805
申请日：2011-08-29
申请人： Walter HAECKL , Karl HESSE , Wilhelm HOEBOLD , Reinhard WOLF
发明人： Walter HAECKL , Karl HESSE , Wilhelm HOEBOLD , Reinhard WOLF
IPC分类号： C01B33/027 , C01B33/035 , C01B33/02
CPC分类号： C01B33/02 , B01J8/18 , B01J8/1818 , B01J8/1827 , C01B33/027 , C01B33/035
摘要： The invention provides a process for producing polycrystalline silicon, by introducing reaction gases containing a silicon-containing component and hydrogen into reactors to deposit silicon, wherein a purified condensate from a first deposition process in a first reactor is supplied to a second reactor, and is used in a second deposition process in that second reactor.
摘要翻译：本发明提供了一种生产多晶硅的方法，将含有含硅组分和氢气的反应气体引入反应器以沉积硅，其中将来自第一反应器中的第一沉积工艺的纯化冷凝物供应到第二反应器，并且是在该第二反应器中的第二沉积工艺中使用。

8. 发明授权

US08043427B2 Semiconductor wafers of silicon and method for their production 有权
标题翻译：硅半导体晶圆及其生产方法
公开(公告)号：US08043427B2
公开(公告)日：2011-10-25
申请号：US12011713
申请日：2008-01-29
申请人： Andreas Sattler , Wilfried von Ammon , Martin Weber , Walter Haeckl , Herbert Schmidt
发明人： Andreas Sattler , Wilfried von Ammon , Martin Weber , Walter Haeckl , Herbert Schmidt
IPC分类号： C30B15/22
CPC分类号： C30B29/06 , C30B15/203
摘要： Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein during pulling of the single crystal, heat is delivered to a center of the phase boundary and a radial profile of a ratio V/G from the center to an edge of the phase boundary is controlled, G being the temperature gradient perpendicular to the phase boundary and V being the pull rate. The radial profile of the ratio V/G is controlled so that the effect of thermomechanical stress in the single crystal adjoining the phase boundary, is compensated with respect to creation of intrinsic point defects. The invention also relates to defect-free semiconductor wafers of silicon, which can be produced economically by this method.
摘要翻译：硅的半导体晶片是通过从包含在坩埚中的熔融物中拉出在相边界上生长的单晶并从其中切割半导体晶片而制造的，其中在单晶拉制期间，热被传递到相边界的中心，并且控制从相位边界的中心到边缘的比率V / G的径向轮廓，G是垂直于相边界的温度梯度，V是牵引速率。控制比率V / G的径向轮廓，使得邻接相位边界的单晶中的热机械应力的影响被补偿以产生固有点缺陷。本发明还涉及硅的无缺陷半导体晶片，其可以通过该方法经济地制造。

9. 发明授权

US07387676B2 Process for producing silicon semiconductor wafers with defined defect properties, and silicon semiconductor wafers having these defect properties 有权
标题翻译：具有限定缺陷特性的硅半导体晶片的制造方法以及具有这些缺陷特性的硅半导体晶片
公开(公告)号：US07387676B2
公开(公告)日：2008-06-17
申请号：US11452870
申请日：2006-06-14
申请人： Wilfried von Ammon , Walter Haeckl , Andreas Huber , Ulrich Lambert
发明人： Wilfried von Ammon , Walter Haeckl , Andreas Huber , Ulrich Lambert
IPC分类号： C30B15/00
CPC分类号： C30B15/203 , C30B29/06
摘要： In a process for producing silicon semiconductor wafers, a silicon single crystal is pulled using the Czochralski method and is processed to form semiconductor wafers, a ratio V/G of pulling rate V and axial temperature gradient G at a growth front during the pulling of the single crystal being controlled in such a manner that agglomerated vacancy defects above a critical size are formed in the single crystal, the agglomerated vacancy defects, in a region of the semiconductor wafer that is of relevance to electronic components, shrinking during production of the components such that the size in this region no longer exceeds the critical size. Silicon semiconductor wafers with agglomerated vacancy defects in the relevant device region preferably contain agglomerated vacancy defects having an inner surface which is at least partially free of an oxide layer and a size of less than 50 nm.
摘要翻译：在制造硅半导体晶片的工艺中，使用切克劳斯基法（Czochralski method）拉制硅单晶，并且在拉伸期间处理以形成半导体晶片，拉伸速率V与生长前沿的轴向温度梯度G的比值V / G 控制单晶的方式是在单晶中形成高于临界尺寸的聚集空位缺陷，在与电子部件相关的半导体晶片的区域中的聚集空位缺陷在组件的制造过程中收缩该区域的尺寸不再超过临界尺寸。在相关器件区域中具有团聚空位缺陷的硅半导体晶片优选地含有具有至少部分不含氧化物层和小于50nm的尺寸的内表面的附聚空位缺陷。

10. 发明申请

US20060283374A1 Process for producing silicon semiconductor wafers with defined defect properties, and silicon semiconductor wafers having these defect properties 有权
标题翻译：具有限定缺陷特性的硅半导体晶片的制造方法以及具有这些缺陷特性的硅半导体晶片
公开(公告)号：US20060283374A1
公开(公告)日：2006-12-21
申请号：US11452870
申请日：2006-06-14
申请人： Wilfried Ammon , Walter Haeckl , Andreas Huber , Ulrich Lambert
发明人： Wilfried Ammon , Walter Haeckl , Andreas Huber , Ulrich Lambert
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B15/203 , C30B29/06
摘要： In a process for producing silicon semiconductor wafers, a silicon single crystal is pulled using the Czochralski method and is processed to form semiconductor wafers, a ratio V/G of pulling rate V and axial temperature gradient G at a growth front during the pulling of the single crystal being controlled in such a manner that agglomerated vacancy defects above a critical size are formed in the single crystal, the agglomerated vacancy defects, in a region of the semiconductor wafer that is of relevance to electronic components, shrinking during production of the components such that the size in this region no longer exceeds the critical size. Silicon semiconductor wafers with agglomerated vacancy defects in the relevant device region preferably contain agglomerated vacancy defects having an inner surface which is at least partially free of an oxide layer and a size of less than 50 nm.
摘要翻译：在制造硅半导体晶片的工艺中，使用切克劳斯基法（Czochralski method）拉制硅单晶，并且在拉伸期间处理以形成半导体晶片，拉伸速率V与生长前沿的轴向温度梯度G的比率V / G 控制单晶的方式是在单晶中形成高于临界尺寸的聚集空位缺陷，在与电子部件相关的半导体晶片的区域中的聚集空位缺陷在组件的制造过程中收缩该区域的尺寸不再超过临界尺寸。在相关器件区域中具有团聚空位缺陷的硅半导体晶片优选地含有具有至少部分不含氧化物层和小于50nm的尺寸的内表面的附聚空位缺陷。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式