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    • 4. 发明申请
    • Photoconductor structure processing methods and imaging device photoconductor structures
    • 光电导体结构处理方法和成像器件感光体结构
    • US20090004588A1
    • 2009-01-01
    • US11823249
    • 2007-06-27
    • Xia ShengHou T. Ng
    • Xia ShengHou T. Ng
    • G03G15/05
    • G03G5/043G03G5/005G03G5/0657G03G15/752G03G2215/00987
    • Photoconductor structure processing methods and imaging device photoconductor structures are described. According to one embodiment, a photoconductor structure processing method includes processing a photoconductor structure of an imaging device and wherein the photoconductor structure comprises charge transport material configured to conduct electrical charges generated responsive to reception of light to form a latent image during an electro-photographic imaging process, the processing comprising removing at least some of the charge transport material from at least a portion of the photoconductor structure. The photoconductor structure may also be further treated to reduce the migration of charge transport material. Additional embodiments are described in the disclosure.
    • 描述了感光体结构处理方法和成像装置光电导体结构。 根据一个实施例,光电导体结构处理方法包括处理成像器件的光电导体结构,并且其中光电导体结构包括电荷传输材料,电荷传输材料被配置为在电摄影成像期间导出响应于光的产生产生潜像以形成潜像 该处理包括从感光体结构的至少一部分去除至少一些电荷传输材料。 还可以进一步处理光电导体结构以减少电荷输送材料的迁移。 在本公开中描述了另外的实施例。
    • 9. 发明授权
    • Photoconductor structure processing methods and imaging device photoconductor structures
    • 光电导体结构处理方法和成像器件感光体结构
    • US08137887B2
    • 2012-03-20
    • US11823249
    • 2007-06-27
    • Xia ShengHou T. Ng
    • Xia ShengHou T. Ng
    • G03G13/24
    • G03G5/043G03G5/005G03G5/0657G03G15/752G03G2215/00987
    • Photoconductor structure processing methods and imaging device photoconductor structures are described. According to one embodiment, a photoconductor structure processing method includes processing a photoconductor structure of an imaging device and wherein the photoconductor structure comprises charge transport material configured to conduct electrical charges generated responsive to reception of light to form a latent image during an electro-photographic imaging process, the processing comprising removing at least some of the charge transport material from at least a portion of the photoconductor structure. The photoconductor structure may also be further treated to reduce the migration of charge transport material. Additional embodiments are described in the disclosure.
    • 描述了感光体结构处理方法和成像装置光电导体结构。 根据一个实施例,光电导体结构处理方法包括处理成像器件的光电导体结构,并且其中光电导体结构包括电荷传输材料,电荷传输材料被配置为在电摄影成像期间导出响应于光的产生产生潜像以形成潜像 该处理包括从感光体结构的至少一部分去除至少一些电荷传输材料。 还可以进一步处理光电导体结构以减少电荷输送材料的迁移。 在本公开中描述了另外的实施例。