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    • 4. 发明申请
    • Photoconductor structure processing methods and imaging device photoconductor structures
    • 光电导体结构处理方法和成像器件感光体结构
    • US20090004588A1
    • 2009-01-01
    • US11823249
    • 2007-06-27
    • Xia ShengHou T. Ng
    • Xia ShengHou T. Ng
    • G03G15/05
    • G03G5/043G03G5/005G03G5/0657G03G15/752G03G2215/00987
    • Photoconductor structure processing methods and imaging device photoconductor structures are described. According to one embodiment, a photoconductor structure processing method includes processing a photoconductor structure of an imaging device and wherein the photoconductor structure comprises charge transport material configured to conduct electrical charges generated responsive to reception of light to form a latent image during an electro-photographic imaging process, the processing comprising removing at least some of the charge transport material from at least a portion of the photoconductor structure. The photoconductor structure may also be further treated to reduce the migration of charge transport material. Additional embodiments are described in the disclosure.
    • 描述了感光体结构处理方法和成像装置光电导体结构。 根据一个实施例,光电导体结构处理方法包括处理成像器件的光电导体结构,并且其中光电导体结构包括电荷传输材料,电荷传输材料被配置为在电摄影成像期间导出响应于光的产生产生潜像以形成潜像 该处理包括从感光体结构的至少一部分去除至少一些电荷传输材料。 还可以进一步处理光电导体结构以减少电荷输送材料的迁移。 在本公开中描述了另外的实施例。
    • 8. 发明授权
    • Image forming apparatus, image forming method, process cartridge, photoconductor and method of preparing photoconductor
    • 图像形成装置,图像形成方法,处理盒,光电导体和制备光电导体的方法
    • US06699631B2
    • 2004-03-02
    • US10077756
    • 2002-02-20
    • Yuka MiyamotoToshiyuki KabataTamotsu Aruga
    • Yuka MiyamotoToshiyuki KabataTamotsu Aruga
    • G03G1500
    • G03G5/04G03G5/005
    • An image forming apparatus including a photoconductor, and an exposing device for irradiating a surface of the photoconductor imagewise with a coherent light to form an electrostatic latent image thereon. The surface of the photoconductor has such roughness as to provide I(S) of at least 3.0×10−3, wherein I(S) is given by the following equations: I ⁡ ( S ) = ( 1 N ) ⁢ ∑ n = 0 N - 1 ⁢   ⁢ { S ⁡ ( n N · Δ ⁢   ⁢ t ) } S ⁡ ( n N · Δ ⁢   ⁢ t ) = 1 N · &LeftBracketingBar; X ⁡ ( n N · Δ ⁢   ⁢ t ) &RightBracketingBar; 2 ⁢   X ⁢ ( n N · Δ ⁢   ⁢ t ) = ∑ m = 0 N - 1 ⁢   ⁢ x ⁡ ( m · Δ ⁢   ⁢ t ) ⁢ exp ⁡ ( - ⅈ2 ⁢   ⁢ π · n N · Δ ⁢   ⁢ t · m · Δ ⁢   ⁢ t ) wherein N is a number of samples obtained from a sectional curve of the surface of the photoconductor and is 2p where p is an integer, &Dgr;t is a sampling interval, in &mgr;m, at which the N-number of the samples are sampled, x(t) is a height of the sectional curve, in &mgr;m, of a sample at a position t in the preset length, and n and m are integers. The sectional curve is as obtained by measuring a profile of the surface through a preset length N·&Dgr;t.
    • 一种包括光电导体的图像形成装置和用相干光照射光电导体的表面以在其上形成静电潜像的曝光装置。 光电导体的表面具有提供I(S)至少为3.0×10 -3的粗糙度,其中I(S)由以下等式给出:其中N是从截面曲线 光电导体的表面是2 p,其中p是整数,Deltat是采样间隔,其中N个样本被采样,x(t)是截面曲线的高度, 在一个样本中,在一个位置t以预设的长度,并且n和m是整数。 截面曲线通过测量表面的轮廓通过预设长度N.Deltat获得。