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1. 发明授权

US09144089B2 Access method and system for MTC device, and MTC device 有权
标题翻译： MTC设备和MTC设备的访问方法和系统
公开(公告)号：US09144089B2
公开(公告)日：2015-09-22
申请号：US13574323
申请日：2011-04-15
申请人： Jing Li , Xinhui Wang , Changwei Ke
发明人： Jing Li , Xinhui Wang , Changwei Ke
IPC分类号： H04W4/00 , H04J3/00 , H04W74/08
CPC分类号： H04W74/0833
摘要： The present invention provides an access method and a system for a Machine-Type Communication (MTC) device, and an MTC device. The method comprises the steps of: an MTC device sending, when performing channel request, a channel request cause value and a random reference value to a Base Station Subsystem (BSS) (100), and the BSS sending the received channel request cause value and random reference value back to the MTC device when completing channel allocation (101). The present invention distinguishes the MTC services from other non-MTC services through the channel request cause value, that is, when the cause values are different, the collision will not occur even if the random reference values are the same, thus reducing the probability of the random reference value collision, implementing the effective management for access operations of large numbers of MTC devices, and avoiding the influence of random reference value collision on the normal implementation of original services.
摘要翻译：本发明提供了一种用于机器类型通信（MTC）设备和MTC设备的访问方法和系统。所述方法包括以下步骤：MTC设备在向基站子系统（BSS）（100）发送信道请求原因值和随机参考值时，发送所述接收的信道请求导致值，并且随机参考值在完成信道分配时返回给MTC设备（101）。本发明通过信道请求原因值来区分MTC服务与其他非MTC服务，即当原因值不同时，即使随机参考值相同也不会发生冲突，从而降低了随机参考值碰撞，实现大量MTC设备接入操作的有效管理，避免随机参考值碰撞对原始业务正常实现的影响。

2. 发明授权

US08335540B2 Method and GSM system for realizing flat mobile communication, and enhanced base station 有权
标题翻译：实现平板移动通信的方法和GSM系统，以及增强型基站
公开(公告)号：US08335540B2
公开(公告)日：2012-12-18
申请号：US13222375
申请日：2011-08-31
申请人： Xinhui Wang
发明人： Xinhui Wang
IPC分类号： H04B1/38
CPC分类号： H04W88/08 , H04W92/045 , H04W92/14 , H04W92/20 , H04W92/22
摘要： The present invention discloses an enhanced base station, which includes a Um interface functional module (1), a base station functional module (2), a controller functional module (3), and an A interface functional module (4), wherein the Um interface functional module (1), the base station functional module (2) and the A interface functional module (4) carry out the function of a BTS, and the controller functional module (3) and the A interface functional module (4) carry out the function of a BSC. The present invention also provides a method and a GSM system for realizing a flat mobile communication, wherein the enhanced base station carries out the functions of a BTS and a BSC in a conventional GSM system. Application of the present invention can decrease the number of devices for constituting the GSM system and the number of forwarding devices between a calling MS and a called MS, therefore reduce the time for service data transmission and improve the reliability of the transmission.
摘要翻译：本发明公开了一种增强型基站，包括Um接口功能模块（1），基站功能模块（2），控制器功能模块（3）和A接口功能模块（4），其中Um 接口功能模块（1），基站功能模块（2）和A接口功能模块（4）执行BTS的功能，控制器功能模块（3）和A接口功能模块（4）携带了解BSC的功能。本发明还提供了一种用于实现平坦移动通信的方法和GSM系统，其中增强型基站在常规GSM系统中执行BTS和BSC的功能。本发明的应用可以减少用于构成GSM系统的设备数量和呼叫MS与被叫MS之间的转发设备的数量，从而减少业务数据传输的时间并提高传输的可靠性。

3. 发明申请

US20120250566A1 Method and system for acquiring support capability of mobile terminal by base station side system 有权
标题翻译：基站侧系统支持移动终端支持能力的方法和系统
公开(公告)号：US20120250566A1
公开(公告)日：2012-10-04
申请号：US13516086
申请日：2009-12-16
申请人： Xinhui Wang , Zhendong Kuang , Shen Tian
发明人： Xinhui Wang , Zhendong Kuang , Shen Tian
IPC分类号： H04W24/10
CPC分类号： H04W8/22 , H04W24/08 , H04W24/10 , H04W28/18
摘要： A method for acquiring support capability of a mobile terminal by a base station side system is disclosed in the present disclosure, and the method includes: the base station side system applies a co-frequency interference to the mobile terminal, and detects a measurement report which is fed back by the mobile terminal after the co-frequency interference is applied, and determines and acquires the support capability of the mobile terminal for voice services over adaptive multi-user channels on one slot according to associated parameters in the detected measurement report in combination with associated threshold values. A system for acquiring support capability of the mobile terminal by the base station side system is also disclosed in the present disclosure. In the system, a base station side determining unit is configured to determine and acquire the support capability of the mobile terminal for voice services over adaptive multi-user channels on one slot according to associated parameters in detected measurement report in combination with associated threshold values. With the method and system in the present disclosure, the base station side system can adaptively and accurately acquire the support capability of the mobile terminal for Voice services over adaptive multi-user channels on one slot.
摘要翻译：在本公开中公开了一种用于在基站侧系统中获取移动终端的支持能力的方法，该方法包括：基站侧系统向移动终端应用同频干扰，并检测出在应用同频干扰之后由移动终端反馈，并根据检测到的测量报告中的相关参数在一个时隙上确定并获取用于语音业务的自适应多用户信道上的语音业务的支持能力具有关联的阈值。在本公开中还公开了一种用于由基站侧系统获取移动终端的支持能力的系统。在该系统中，基站侧确定单元被配置为根据检测到的测量报告中的相关参数以及相关联的阈值，在一个时隙上确定并获取用于语音服务的移动终端的自适应多用户信道的支持能力。利用本公开的方法和系统，基站侧系统可以在一个时隙上通过自适应多用户信道自适应地和准确地获取移动终端对语音业务的支持能力。

4. 发明申请

US20120213168A1 METHOD AND DEVICE FOR INDICATING FRAME MAPPING MODES 有权
标题翻译：用于指示帧映射模式的方法和装置
公开(公告)号：US20120213168A1
公开(公告)日：2012-08-23
申请号：US13378345
申请日：2009-11-12
申请人： Xinhui Wang , Jing Li
发明人： Xinhui Wang , Jing Li
IPC分类号： H04W72/04
CPC分类号： H04W72/042 , H04W8/22 , H04W72/048
摘要： A method for indicating a frame mapping way is provided, including: a network side notifying a mobile station of information of a SACCH frame mapping way used by the mobile station. An apparatus for indicating a frame mapping way is further provided, including a determination unit and a notification unit, wherein the determination unit is for determining a used SACCH frame mapping way for a mobile station; the notification unit is for notifying the mobile station of information of a SACCH frame mapping way used by the mobile station. With the invention, the network side can notify the mobile station of the information of which frame mapping way is used determined for the mobile station, thereby solving the problem that the mobile station does not know which frame mapping way is used, greatly improving the performance of the communication system after the mobile station uses the determined frame mapping way.
摘要翻译：提供了一种用于指示帧映射方式的方法，包括：网络侧向移动台通知移动台使用的SACCH帧映射方式的信息。还提供了一种用于指示帧映射方式的装置，包括确定单元和通知单元，其中所述确定单元用于确定用于移动台的所使用的SACCH帧映射方式; 通知单元用于向移动台通知移动台使用的SACCH帧映射方式的信息。利用本发明，网络侧可以向移动台通知为移动台确定哪种帧映射方式的信息，从而解决移动台不知道使用哪种帧映射方式的问题，大大提高了性能在移动台使用确定的帧映射方式之后的通信系统。

5. 发明授权

US08198673B2 Asymmetric epitaxy and application thereof 有权
标题翻译：不对称外延及其应用
公开(公告)号：US08198673B2
公开(公告)日：2012-06-12
申请号：US13080702
申请日：2011-04-06
申请人： Haizhou Yin , Xinhui Wang , Kevin K. Chan , Zhibin Ren
发明人： Haizhou Yin , Xinhui Wang , Kevin K. Chan , Zhibin Ren
IPC分类号： H01L21/00
CPC分类号： H01L21/26586 , H01L29/66628 , H01L29/66636 , H01L29/66659 , H01L29/7835
摘要： The present invention provides a method of forming asymmetric field-effect-transistors. The method includes forming a gate structure on top of a semiconductor substrate, the gate structure including a gate stack and spacers adjacent to sidewalls of the gate stack, and having a first side and a second side opposite to the first side; performing angled ion-implantation from the first side of the gate structure in the substrate, thereby forming an ion-implanted region adjacent to the first side, wherein the gate structure prevents the angled ion-implantation from reaching the substrate adjacent to the second side of the gate structure; and performing epitaxial growth on the substrate at the first and second sides of the gate structure. As a result, epitaxial growth on the ion-implanted region is much slower than a region experiencing no ion-implantation. A source region formed to the second side of the gate structure by the epitaxial growth has a height higher than a drain region formed to the first side of the gate structure by the epitaxial growth. A semiconductor structure formed thereby is also provided.
摘要翻译：本发明提供了形成非对称场效应晶体管的方法。该方法包括在半导体衬底的顶部上形成栅极结构，该栅极结构包括一个栅极叠层和邻近该栅极叠层的侧壁的间隔物，并具有与第一侧相对的第一侧和第二侧; 从衬底中的栅极结构的第一侧进行成角度的离子注入，从而形成与第一侧相邻的离子注入区域，其中栅极结构防止成角度的离子注入到达邻近第二侧的衬底门结构; 以及在栅极结构的第一和第二侧在衬底上进行外延生长。结果，在离子注入区域上的外延生长比经历无离子注入的区域慢得多。通过外延生长形成到栅极结构的第二侧的源极区域的高度高于通过外延生长形成于栅极结构的第一侧的漏极区域的高度。还提供了由此形成的半导体结构。

6. 发明申请

US20110171788A1 Fabrication of Field Effect Devices Using Spacers 失效
标题翻译：使用Spacers制造场效应器件
公开(公告)号：US20110171788A1
公开(公告)日：2011-07-14
申请号：US12684997
申请日：2010-01-11
申请人： Kevin K. Chan , Zhibin Ren , Xinhui Wang , Haizhou Yin
发明人： Kevin K. Chan , Zhibin Ren , Xinhui Wang , Haizhou Yin
IPC分类号： H01L21/336
CPC分类号： H01L29/66628 , H01L29/665 , H01L29/6656 , H01L29/66772
摘要： A method for forming a field effect device includes forming a gate portion on a silicon-on-insulator layer (SOI), forming first spacer members on the SOI layer adjacent to the gate portion, depositing a layer of spacer material on the SOI layer, the first spacer members, and the gate portion, removing portions of the layer of spacer material to form second spacer members on the SOI layer adjacent to the first spacer members, forming a source region and a drain region on the SOI layer by implanting ions in the SOI layer, and etching to remove the second spacer members.
摘要翻译：一种形成场效应器件的方法包括在绝缘体上硅层（SOI）上形成栅极部分，在邻近栅极部分的SOI层上形成第一间隔元件，在SOI层上沉积间隔物材料层，第一隔离构件和栅极部分，去除间隔物材料层的部分，以在与第一间隔件相邻的SOI层上形成第二间隔件，通过将离子注入到SOI层上形成源极区域和漏极区域 SOI层，并蚀刻以除去第二间隔件。

7. 发明授权

US07887822B2 Peptides for stimulating an immune response against melanoma 有权
标题翻译：用于刺激针对黑色素瘤的免疫应答的肽
公开(公告)号：US07887822B2
公开(公告)日：2011-02-15
申请号：US11487877
申请日：2006-07-17
申请人： Soldano Ferrone , Chien-Chung Chang , Wei Luo , Xinhui Wang , Debashis Ghosh
发明人： Soldano Ferrone , Chien-Chung Chang , Wei Luo , Xinhui Wang , Debashis Ghosh
IPC分类号： A61K39/00
CPC分类号： C07K16/3053 , A61K2039/505 , C07K16/4266 , C07K2299/00 , C07K2317/55 , C07K2317/73 , C07K2317/76
摘要： Provided in the present invention are recombinant peptides and a method for using the peptides in stimulating an immune response against human high molecular weight-melanoma associated antigen (HMW-MAA). The peptides were designed from the identification of regions of structural and amino acid sequence homology between HMW-MAA and the mouse anti-idiotypic monoclonal antibody MK2-23. The method comprises the step of administering to an individual a peptide of the invention in an amount effective to elicit an immune response against HMW-MAA.
摘要翻译：在本发明中提供的是重组肽和使用该肽刺激针对人高分子量黑素瘤相关抗原（HMW-MAA）的免疫应答的方法。从HMW-MAA和小鼠抗独特型单克隆抗体MK2-23的结构域和氨基酸序列同源性区域的鉴定中设计肽。该方法包括以有效引发对HMW-MAA的免疫应答的量向个体施用本发明的肽的步骤。

8. 发明授权

US07682913B1 Process for making a MCSFET 有权
标题翻译：制造MCSFET的工艺
公开(公告)号：US07682913B1
公开(公告)日：2010-03-23
申请号：US12359731
申请日：2009-01-26
申请人： Xu Ouyang , Louis Lu-Chen Hsu , Xinhui Wang , Haizhou Yin
发明人： Xu Ouyang , Louis Lu-Chen Hsu , Xinhui Wang , Haizhou Yin
IPC分类号： H01L21/336
CPC分类号： H01L29/785 , H01L29/66803
摘要： A process for making a MCSFET includes providing a first implant through a first side of an elongated stack, and then providing a second implant through a second side of the stack. The first implant has a dose different than the dose of the second implant, so that final dopant concentrations in the first and second sides differ and the transistor has two threshold voltages Vt1, Vt2.
摘要翻译：制造MCSFET的方法包括通过细长堆叠的第一侧提供第一植入物，然后通过堆叠的第二侧提供第二植入物。第一植入物具有与第二植入物的剂量不同的剂量，使得第一和第二侧中的最终掺杂剂浓度不同，并且晶体管具有两个阈值电压Vt1，Vt2。

9. 发明申请

US20100038679A1 FINFET WITH LONGITUDINAL STRESS IN A CHANNEL 有权
标题翻译： FINANCE在通道中具有纵向应力
公开(公告)号：US20100038679A1
公开(公告)日：2010-02-18
申请号：US12191425
申请日：2008-08-14
申请人： KEVIN K. CHAN , Qiqing (Christine) Ouyang , Dae-Gyu Park , Xinhui Wang
发明人： KEVIN K. CHAN , Qiqing (Christine) Ouyang , Dae-Gyu Park , Xinhui Wang
IPC分类号： H01L27/12 , H01L21/84
CPC分类号： H01L29/785 , H01L29/66795 , H01L29/7848
摘要： At least one gate dielectric, a gate electrode, and a gate cap dielectric are formed over at least one channel region of at least one semiconductor fin. A gate spacer is formed on the sidewalls of the gate electrode, exposing end portions of the fin on both sides of the gate electrode. The exposed portions of the semiconductor fin are vertically and laterally etched, thereby reducing the height and width of the at least one semiconductor fin in the end portions. Exposed portions of the insulator layer may also be recessed. A lattice-mismatched semiconductor material is grown on the remaining end portions of the at least one semiconductor fin by selective epitaxy with epitaxial registry with the at least one semiconductor fin. The lattice-mismatched material applies longitudinal stress along the channel of the finFET formed on the at least one semiconductor fin.
摘要翻译：在至少一个半导体鳍片的至少一个沟道区域上形成至少一个栅极电介质，栅电极和栅极帽电介质。在栅电极的侧壁上形成栅极间隔物，在栅电极的两侧露出翅片的端部。半导体鳍片的暴露部分被垂直和横向蚀刻，从而减小端部中的至少一个半导体翅片的高度和宽度。绝缘体层的露出部分也可以凹进。晶格不匹配的半导体材料通过选择性外延生长在至少一个半导体鳍片的剩余端部上，并与外部对准至少一个半导体鳍片。晶格不匹配材料沿着形成在至少一个半导体鳍片上的finFET的沟道施加纵向应力。

10. 发明授权

US07659583B2 Ultrathin SOI CMOS devices employing differential STI liners 失效
标题翻译：使用差分STI衬垫的超薄SOI CMOS器件
公开(公告)号：US07659583B2
公开(公告)日：2010-02-09
申请号：US11839272
申请日：2007-08-15
申请人： Zhibin Ren , Ghavam Shahidi , Dinkar V. Singh , Jeffrey W. Sleight , Xinhui Wang
发明人： Zhibin Ren , Ghavam Shahidi , Dinkar V. Singh , Jeffrey W. Sleight , Xinhui Wang
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： H01L21/84 , H01L21/76229 , H01L21/76283 , H01L27/1203 , H01L29/7846
摘要： An oxynitride pad layer and a masking layer are formed on an ultrathin semiconductor-on-insulator substrate containing a top semiconductor layer comprising silicon. A first portion of a shallow trench is patterned in a top semiconductor layer by lithographic masking of an NFET region and an etch, in which exposed portions of the buried insulator layer is recessed and the top semiconductor layer is undercut. A thick thermal silicon oxide liner is formed on the exposed sidewalls and bottom peripheral surfaces of a PFET active area to apply a high laterally compressive stress. A second portion of the shallow trench is formed by lithographic masking of a PFET region including the PFET active area. A thin thermal silicon oxide or no thermal silicon oxide is formed on exposed sidewalls of the NFET active area, which is subjected to a low lateral compressive stress or no lateral compressive stress.
摘要翻译：在包含硅的顶部半导体层的超薄绝缘体上的基板上形成氧氮化物衬垫层和掩模层。浅沟槽的第一部分通过NFET区域和蚀刻的光刻掩模在顶部半导体层中图案化，其中埋入绝缘体层的暴露部分凹陷并且顶部半导体层被切割。在PFET有源区的暴露的侧壁和底部周边表面上形成厚的热氧化硅衬垫以施加高横向压应力。浅沟槽的第二部分通过包括PFET有源区的PFET区域的光刻掩模形成。在NFET有源区的暴露的侧壁上形成薄的热氧化硅或不存在热氧化硅，其经受低的侧向压应力或没有横向压应力。

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