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1. 发明授权

US07947577B2 Method and apparatus for producing group III nitride 失效
标题翻译：制备III族氮化物的方法和装置
公开(公告)号：US07947577B2
公开(公告)日：2011-05-24
申请号：US12440413
申请日：2007-08-03
申请人： Toru Nagashima , Kazuya Takada , Hiroyuki Yanagi , Manabu Harada , Yasunori Hirata , Keisuke Kondo
发明人： Toru Nagashima , Kazuya Takada , Hiroyuki Yanagi , Manabu Harada , Yasunori Hirata , Keisuke Kondo
IPC分类号： H01L21/20 , C23C16/00
CPC分类号： C23C16/303 , C23C16/45512 , C23C16/45514 , C23C16/45519 , C23C16/4557 , C30B25/02 , C30B25/14 , C30B25/16 , C30B29/403 , H01L21/0254 , H01L21/0262
摘要： A method of producing a group III nitride such as aluminum nitride, comprising the step of reacting a group III halide gas such as aluminum trichloride gas with a nitrogen source gas such as ammonia gas in a growth chamber to grow a group III nitride on a substrate held in the growth chamber, wherein the method further comprises premixing together the group III halide gas and the nitrogen source gas to obtain a mixed gas and then introducing the mixed gas into the growth chamber without forming a deposit in the mixed gas substantially to be reacted each other.For the growth of a group III nitride such as an aluminum-based group III nitride by HVPE, there are provided a method of producing the group III nitride having as high quality as that obtained by the method of the prior art at a high yield and an apparatus used in the method.
摘要翻译：一种生产III族氮化物如氮化铝的方法，包括在生长室中使诸如三氯化铝气体的III族卤化物气体与诸如氨气的氮源气体反应以在衬底上生长III族氮化物的步骤保持在生长室中，其中所述方法还包括将III族卤化物气体和氮源气体一起预混合以获得混合气体，然后将混合气体引入生长室中，而不在基本上被反应的混合气体中形成沉积物彼此。对于通过HVPE的诸如铝基III族氮化物的III族氮化物的生长，提供了以高产率制备具有如现有技术方法获得的高质量的III族氮化物的方法，该方法中使用的装置。

2. 发明授权

US5929280A Process for the preparation of aqueous solutions of tetraalkylammonium hydroxides 失效
标题翻译：制备四烷基氢氧化铵水溶液的方法
公开(公告)号：US5929280A
公开(公告)日：1999-07-27
申请号：US43564
申请日：1998-03-23
申请人： Tooru Nonaka , Yasunori Hirata , Masafumi Shibuya
发明人： Tooru Nonaka , Yasunori Hirata , Masafumi Shibuya
IPC分类号： C07C209/08 , C07C209/84 , C07C211/63 , C07C209/00 , C07C209/12
CPC分类号： C07C209/84 , C07C209/08
摘要： There is provided a simple method of producing in a good yield a tetraalkylammonium hydroxide aqueous solution in which the content of metal ions such as alkali metal ions is reduced to an extremely low level.High-purity trialkylamine and high-purity alkyl chloride are reacted with each other in ultrapure water to obtain an extremely high-purity tetraalkylammonium chloride aqueous solution substantially free from metal ions such as alkali metal ions, and then, the tetraalkylammonium chloride aqueous solution is subjected to electrolysis-dialysis in a solution state without drying it into a solid to produce a tetraalkylammonium hydroxide aqueous solution. Thereby, an extremely high-purity tetraalkylammonium hydroxide aqueous solution with little reduction in purity is obtained in a high yield.
摘要翻译： PCT No.PCT / JP97 / 02505 Sec。 371日期：1998年3月23日 102（e）1998年3月23日PCT PCT 1997年7月18日PCT公布。第WO98 / 03466号公报日期1998年1月29日提供了以良好的产率生产四烷基氢氧化铵水溶液的简单方法，其中金属离子如碱金属离子的含量降低到极低水平。将高纯度三烷基胺和高纯度烷基氯在超纯水中相互反应，得到基本上不含金属离子如碱金属离子的极高纯度四烷基氯化铵水溶液，然后使四烷基氯化铵水溶液以溶液状态进行电解 - 透析，而不将其干燥成固体以产生四烷基氢氧化铵水溶液。由此，能够高收率地得到纯度低的几乎不降低的极高纯度的四烷基氢氧化铵水溶液。

3. 发明申请

US20100029065A1 METHOD AND APPARATUS FOR PRODUCING GROUP III NITRIDE 失效
标题翻译：生产III类硝酸的方法和装置
公开(公告)号：US20100029065A1
公开(公告)日：2010-02-04
申请号：US12440413
申请日：2007-08-03
申请人： Toru Nagashima , Kazuya Takada , Hiroyuki Yanagi , Manabu Harada , Yasunori Hirata , Keisuke Kondo
发明人： Toru Nagashima , Kazuya Takada , Hiroyuki Yanagi , Manabu Harada , Yasunori Hirata , Keisuke Kondo
IPC分类号： H01L21/20 , C23C16/54
CPC分类号： C23C16/303 , C23C16/45512 , C23C16/45514 , C23C16/45519 , C23C16/4557 , C30B25/02 , C30B25/14 , C30B25/16 , C30B29/403 , H01L21/0254 , H01L21/0262
摘要： A method of producing a group III nitride such as aluminum nitride, comprising the step of reacting a group III halide gas such as aluminum trichloride gas with a nitrogen source gas such as ammonia gas in a growth chamber to grow a group III nitride on a substrate held in the growth chamber, wherein the method further comprises premixing together the group III halide gas and the nitrogen source gas to obtain a mixed gas and then introducing the mixed gas into the growth chamber without forming a deposit in the mixed gas substantially to be reacted each other.For the growth of a group III nitride such as an aluminum-based group III nitride by HVPE, there are provided a method of producing the group III nitride having as high quality as that obtained by the method of the prior art at a high yield and an apparatus used in the method.
摘要翻译：一种生产III族氮化物如氮化铝的方法，包括在生长室中使诸如三氯化铝气体的III族卤化物气体与诸如氨气的氮源气体反应以在衬底上生长III族氮化物的步骤保持在生长室中，其中所述方法还包括将III族卤化物气体和氮源气体一起预混合以获得混合气体，然后将混合气体引入生长室中，而不在基本上被反应的混合气体中形成沉积物彼此。对于通过HVPE的诸如铝基III族氮化物的III族氮化物的生长，提供了以高产率制备具有如现有技术方法获得的高质量的III族氮化物的方法，该方法中使用的装置。

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