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1. 发明授权

US07947577B2 Method and apparatus for producing group III nitride 失效
标题翻译：制备III族氮化物的方法和装置
公开(公告)号：US07947577B2
公开(公告)日：2011-05-24
申请号：US12440413
申请日：2007-08-03
申请人： Toru Nagashima , Kazuya Takada , Hiroyuki Yanagi , Manabu Harada , Yasunori Hirata , Keisuke Kondo
发明人： Toru Nagashima , Kazuya Takada , Hiroyuki Yanagi , Manabu Harada , Yasunori Hirata , Keisuke Kondo
IPC分类号： H01L21/20 , C23C16/00
CPC分类号： C23C16/303 , C23C16/45512 , C23C16/45514 , C23C16/45519 , C23C16/4557 , C30B25/02 , C30B25/14 , C30B25/16 , C30B29/403 , H01L21/0254 , H01L21/0262
摘要： A method of producing a group III nitride such as aluminum nitride, comprising the step of reacting a group III halide gas such as aluminum trichloride gas with a nitrogen source gas such as ammonia gas in a growth chamber to grow a group III nitride on a substrate held in the growth chamber, wherein the method further comprises premixing together the group III halide gas and the nitrogen source gas to obtain a mixed gas and then introducing the mixed gas into the growth chamber without forming a deposit in the mixed gas substantially to be reacted each other.For the growth of a group III nitride such as an aluminum-based group III nitride by HVPE, there are provided a method of producing the group III nitride having as high quality as that obtained by the method of the prior art at a high yield and an apparatus used in the method.
摘要翻译：一种生产III族氮化物如氮化铝的方法，包括在生长室中使诸如三氯化铝气体的III族卤化物气体与诸如氨气的氮源气体反应以在衬底上生长III族氮化物的步骤保持在生长室中，其中所述方法还包括将III族卤化物气体和氮源气体一起预混合以获得混合气体，然后将混合气体引入生长室中，而不在基本上被反应的混合气体中形成沉积物彼此。对于通过HVPE的诸如铝基III族氮化物的III族氮化物的生长，提供了以高产率制备具有如现有技术方法获得的高质量的III族氮化物的方法，该方法中使用的装置。

2. 发明申请

US20100029065A1 METHOD AND APPARATUS FOR PRODUCING GROUP III NITRIDE 失效
标题翻译：生产III类硝酸的方法和装置
公开(公告)号：US20100029065A1
公开(公告)日：2010-02-04
申请号：US12440413
申请日：2007-08-03
申请人： Toru Nagashima , Kazuya Takada , Hiroyuki Yanagi , Manabu Harada , Yasunori Hirata , Keisuke Kondo
发明人： Toru Nagashima , Kazuya Takada , Hiroyuki Yanagi , Manabu Harada , Yasunori Hirata , Keisuke Kondo
IPC分类号： H01L21/20 , C23C16/54
CPC分类号： C23C16/303 , C23C16/45512 , C23C16/45514 , C23C16/45519 , C23C16/4557 , C30B25/02 , C30B25/14 , C30B25/16 , C30B29/403 , H01L21/0254 , H01L21/0262
摘要： A method of producing a group III nitride such as aluminum nitride, comprising the step of reacting a group III halide gas such as aluminum trichloride gas with a nitrogen source gas such as ammonia gas in a growth chamber to grow a group III nitride on a substrate held in the growth chamber, wherein the method further comprises premixing together the group III halide gas and the nitrogen source gas to obtain a mixed gas and then introducing the mixed gas into the growth chamber without forming a deposit in the mixed gas substantially to be reacted each other.For the growth of a group III nitride such as an aluminum-based group III nitride by HVPE, there are provided a method of producing the group III nitride having as high quality as that obtained by the method of the prior art at a high yield and an apparatus used in the method.
摘要翻译：一种生产III族氮化物如氮化铝的方法，包括在生长室中使诸如三氯化铝气体的III族卤化物气体与诸如氨气的氮源气体反应以在衬底上生长III族氮化物的步骤保持在生长室中，其中所述方法还包括将III族卤化物气体和氮源气体一起预混合以获得混合气体，然后将混合气体引入生长室中，而不在基本上被反应的混合气体中形成沉积物彼此。对于通过HVPE的诸如铝基III族氮化物的III族氮化物的生长，提供了以高产率制备具有如现有技术方法获得的高质量的III族氮化物的方法，该方法中使用的装置。

3. 发明授权

US08926752B2 Method of producing a group III nitride crystal 有权
标题翻译：制造III族氮化物晶体的方法
公开(公告)号：US08926752B2
公开(公告)日：2015-01-06
申请号：US12526685
申请日：2008-02-27
申请人： Akinori Koukitu , Yoshinao Kumagai , Toru Nagashima , Kazuya Takada , Hiroyuki Yanagi
发明人： Akinori Koukitu , Yoshinao Kumagai , Toru Nagashima , Kazuya Takada , Hiroyuki Yanagi
IPC分类号： C30B25/00 , C30B29/40 , C30B25/10 , C30B25/18
CPC分类号： C30B29/403 , C30B25/10 , C30B25/18
摘要： There is provided a method capable of obtaining an aluminum-based group III nitride crystal layer having a smooth surface and high crystallinity by employing only HVPE in which inexpensive raw materials can be used to reduce production costs and high-speed film formation is possible without employing MOVPE.To produce a group III nitride crystal by HVPE comprising the step of growing a group III nitride crystal layer by vapor-phase growth on a single crystal substrate by contacting the heated single crystal substrate with a raw material gas containing a group III halide and a compound having a nitrogen atom, the group III nitride crystal is grown by vapor-phase growth on the single crystal substrate heated at a temperature of 1,000° C. or more and less than 1,200° C. to form an intermediate layer and then, a group III nitride crystal is further grown by vapor-phase growth on the intermediate layer on the substrate heated at a temperature of 1,200° C. or higher.
摘要翻译：提供了一种能够通过仅使用HVPE来获得具有光滑表面和高结晶度的铝基III族氮化物晶体层的方法，其中可以使用便宜的原料来降低生产成本，并且可以在不使用高速成膜的情况下进行高速成膜 MOVPE。为了通过HVPE制造III族氮化物晶体，包括通过使加热的单晶衬底与含有III族卤化物和化合物的原料气体接触，在单晶衬底上通过气相生长生长III族氮化物晶体层的步骤具有氮原子的情况下，在1000℃以上且小于1200℃的温度加热的单晶衬底上通过气相生长生长III族氮化物晶体，形成中间层，通过在1200℃以上的温度下加热的基板上的中间层上气相生长进一步生长III族氮化物晶体。

4. 发明申请

US20100093124A1 METHOD OF PRODUCING A GROUP III NITRIDE CRYSTAL 有权
标题翻译：生产III类氮化物晶体的方法
公开(公告)号：US20100093124A1
公开(公告)日：2010-04-15
申请号：US12526685
申请日：2008-02-27
申请人： Akinori Koukitu , Yoshinao Kumagai , Toru Nagashima , Kazuya Takada , Hiroyuki Yanagi
发明人： Akinori Koukitu , Yoshinao Kumagai , Toru Nagashima , Kazuya Takada , Hiroyuki Yanagi
IPC分类号： H01L33/00 , C30B25/02
CPC分类号： C30B29/403 , C30B25/10 , C30B25/18
摘要： There is provided a method capable of obtaining an aluminum-based group III nitride crystal layer having a smooth surface and high crystallinity by employing only HVPE in which inexpensive raw materials can be used to reduce production costs and high-speed film formation is possible without employing MOVPE.To produce a group III nitride crystal by HVPE comprising the step of growing a group III nitride crystal layer by vapor-phase growth on a single crystal substrate by contacting the heated single crystal substrate with a raw material gas containing a group III halide and a compound having a nitrogen atom, the group III nitride crystal is grown by vapor-phase growth on the single crystal substrate heated at a temperature of 1,000° C. or more and less than 1,200° C. to form an intermediate layer and then, a group III nitride crystal is further grown by vapor-phase growth on the intermediate layer on the substrate heated at a temperature of 1,200° C. or higher.
摘要翻译：提供了一种能够通过仅使用HVPE来获得具有光滑表面和高结晶度的铝基III族氮化物晶体层的方法，其中可以使用便宜的原料来降低生产成本，并且可以在不使用高速成膜的情况下进行高速成膜 MOVPE。为了通过HVPE制造III族氮化物晶体，包括通过使加热的单晶衬底与含有III族卤化物和化合物的原料气体接触，在单晶衬底上通过气相生长生长III族氮化物晶体层的步骤具有氮原子的情况下，在1000℃以上且小于1200℃的温度加热的单晶衬底上通过气相生长生长III族氮化物晶体，形成中间层，通过在1200℃以上的温度下加热的基板上的中间层上气相生长进一步生长III族氮化物晶体。

5. 发明授权

US08129208B2 n-Type conductive aluminum nitride semiconductor crystal and manufacturing method thereof 有权
标题翻译： n型导电氮化铝半导体晶体及其制造方法
公开(公告)号：US08129208B2
公开(公告)日：2012-03-06
申请号：US12526196
申请日：2008-02-02
申请人： Akinori Koukitu , Yoshinao Kumagai , Toru Nagashima , Kazuya Takada , Hiroyuki Yanagi
发明人： Akinori Koukitu , Yoshinao Kumagai , Toru Nagashima , Kazuya Takada , Hiroyuki Yanagi
IPC分类号： H01L21/02
CPC分类号： C30B25/02 , C30B29/403 , H01L21/02389 , H01L21/02403 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L33/007
摘要： This invention provides a self supporting substrate which consists of a n-type conductive aluminum nitride semiconductor crystal and is useful for manufacturing the vertical conductive type AlN semiconductor device. The n-type conductive aluminum nitride semiconductor crystal, by which the self supporting substrate is made up, contains Si atom at a concentration of 1×1018 to 5×1020 cm−3 is substantially free of halogen atoms and substantially does not absorb the light having the energy of not more than 5.9 eV. The self supporting substrate can be obtained by a method comprising the steps of forming an AlN crystal layer on a single crystal substrate such as a sapphire by the HVPE method, preheating the obtained substrate having the AlN crystal layer to a temperature of 1,200° C. or more, forming a second layer consisting of the n-type conductive aluminum nitride semiconductor crystal is formed on the AlN crystal layer in high rate by the HVPE method and separating the second layer from the obtained laminate.
摘要翻译：本发明提供一种由n型导电氮化铝半导体晶体组成的自支撑衬底，并且可用于制造垂直导电型AlN半导体器件。构成自支撑衬底的n型导电氮化铝半导体晶体含有浓度为1×1018至5×1020cm-3的Si原子，基本上不含卤素原子并且基本上不吸收光能量不超过5.9 eV。自支撑基板可以通过以下方法获得：通过HVPE法在诸如蓝宝石的单晶衬底上形成AlN晶体层的步骤，将获得的具有AlN晶体层的衬底预热到1200℃的温度。以上，通过HVPE法以高速率在AlN结晶层上形成由n型导电性氮化铝半导体晶体构成的第二层，并将第二层与得到的层叠体分离。

6. 发明申请

US20100320462A1 N-TYPE CONDUCTIVE ALUMINUM NITRIDE SEMICONDUCTOR CRYSTAL AND MANUFACTURING METHOD THEREOF 有权
标题翻译： N型导电氮化镓半导体晶体及其制造方法
公开(公告)号：US20100320462A1
公开(公告)日：2010-12-23
申请号：US12526196
申请日：2008-02-02
申请人： Akinori Koukitu , Yoshinao Kumagai , Toru Nagashima , Kazuya Takada , Hiroyuki Yanagi
发明人： Akinori Koukitu , Yoshinao Kumagai , Toru Nagashima , Kazuya Takada , Hiroyuki Yanagi
IPC分类号： H01L29/06 , H01L29/20 , H01L21/203
CPC分类号： C30B25/02 , C30B29/403 , H01L21/02389 , H01L21/02403 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L33/007
摘要： This invention provides a selfsupporting substrate which consists of a n-type conductive aluminum nitride semiconductor crystal and is useful for manufacturing the vertical conductive type AlN semiconductor device.The n-type conductive aluminum nitride semiconductor crystal, by which the selfsupporting substrate is made up, contains Si atom at a concentration of 1×1018 to 5×1020 cm−3, is substantially free from halogen atoms, and substantially does not absorb the light having the energy of not more than 5.9 eV. The selfsupporting substrate can be obtained by a method comprising the steps of forming an AlN crystal layer on a single crystal substrate such as a sapphire by the HVPE method, preheating the obtained substrate having the AlN crystal layer to a temperature of 1,200° C. or more, forming a second layer consisting of the n-type conductive aluminum nitride semiconductor crystal is formed on the AlN crystal layer in high rate by the HVPE method and separating the second layer from the obtained laminate.
摘要翻译：本发明提供一种由n型导电氮化铝半导体晶体组成的自支撑衬底，并且可用于制造垂直导电型AlN半导体器件。构成自支撑衬底的n型导电氮化铝半导体晶体含有浓度为1×1018至5×1020cm-3的Si原子，基本上不含卤素原子，并且基本上不吸收能量不超过5.9 eV的光。可以通过以下方法获得自支撑衬底：通过HVPE法在诸如蓝宝石的单晶衬底上形成AlN晶体层的步骤，将获得的具有AlN晶体层的衬底预热至1200℃的温度，或通过HVPE法在AlN晶体层上高效率地形成由n型导电氮化铝半导体晶体构成的第二层，并将第二层与所得层压体分离。

7. 发明申请

US20110094438A1 LAMINATED BODY AND THE METHOD FOR PRODUCTION THEREOF 审中-公开
标题翻译：层压体及其生产方法
公开(公告)号：US20110094438A1
公开(公告)日：2011-04-28
申请号：US12812872
申请日：2009-01-09
申请人： Akinori Koukitu , Yoshinao Kumagai , Masanari Ishizuki , Toru Nagashima , Akira Hakomori , Kazuya Takada
发明人： Akinori Koukitu , Yoshinao Kumagai , Masanari Ishizuki , Toru Nagashima , Akira Hakomori , Kazuya Takada
IPC分类号： C30B25/10
CPC分类号： C30B25/18 , C30B25/183 , C30B29/403
摘要： The present invention provides a self-supporting substrate obtained by the steps of: forming an Al-based group-III nitride thin-layer having a thickness in the range of 3-200 nm on a base substrate made of a single crystal of an inorganic substance which substantially does not decompose at 800° C. in an inert gas atmosphere and which does produce volatiles by decomposition when contacting with a reducing gas in a temperature range of 800-1600° C., for example sapphire; forming voids along the interface between the base substrate and the Al-based group-III nitride thin-layer of the obtained laminated substrate by thermally treating the laminated substrate in a temperature range of 800-1600° C. in a reducing gas atmosphere containing ammonia gas; forming a group-III nitride single crystal thick-layer on the Al-based group-III nitride thin-layer; and separating these formed layers. The self-supporting substrate is a self-supporting substrate of the group-III nitride single crystal such as AlN, which is suitably used for forming a semiconductor device such as ultraviolet light emitting device and of which crystal plane shows a large radius of curvature.
摘要翻译：本发明提供一种自支撑基板，其通过以下步骤获得：在由无机物的单晶制成的基底基板上形成厚度在3〜200nm范围内的Al系III族氮化物薄层在惰性气体气氛中在800℃下基本上不分解的物质，当与800-1600℃的温度范围内的还原气体例如蓝宝石接触时，其通过分解产生挥发物; 通过在800-1600℃的温度范围内在含有氨的还原气体气氛中热处理层压基板，沿着基底基板和Al基III族氮化物薄层之间的界面形成空隙加油站; 在Al系III族氮化物薄层上形成III族氮化物单晶厚层; 并分离这些形成的层。自支撑衬底是诸如AlN的III族氮化物单晶的自支撑衬底，其适合用于形成诸如紫外光发射器件的半导体器件，并且其中晶体具有大的曲率半径。

8. 发明申请

US20110018104A1 METHOD FOR PRODUCING A LAMINATED BODY HAVING Al-BASED GROUP-III NITRIDE SINGLE CRYSTAL LAYER, LAMINATED BODY PRODUCED BY THE METHOD, METHOD FOR PRODUCING Al-BASED GROUP-III NITRIDE SINGLE CRYSTAL SUBSTRATE EMPLOYING THE LAMINATED BODY, AND ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE 审中-公开
标题翻译：用于生产具有基于Al的III族氮化物单晶层的层压体的方法，通过该方法生产的层压体，生产使用层合体的基于Al的III族氮化物单晶基板的方法和氮化钛单晶基板
公开(公告)号：US20110018104A1
公开(公告)日：2011-01-27
申请号：US12812885
申请日：2008-12-16
申请人： Toru Nagashima , Akira Hakomori , Kazuya Takada , Masanari Ishizuki , Akinori Koukitu , Yoshinao Kumagai
发明人： Toru Nagashima , Akira Hakomori , Kazuya Takada , Masanari Ishizuki , Akinori Koukitu , Yoshinao Kumagai
IPC分类号： H01L29/20 , C30B23/02 , H01L21/20
CPC分类号： C30B29/403 , C30B25/183 , H01L33/0075 , H01L2924/0002 , H01L2924/00
摘要： The present invention is a method for producing a laminated body, comprising the steps of: (1) preparing a base substrate having a surface formed of a single crystal which is different from the material constituting the Al-based group-III nitride single crystal layer to be formed; (2) forming an Al-based group-III nitride single crystal layer having a thickness of 10 nm to 1.5 μm on the single crystal surface of the prepared base substrate; (3) forming on the Al-based group-III nitride single crystal layer a non-single crystal layer being 100 times or more thicker than the Al-based group-III nitride single crystal layer without breaking the previously-obtained Al-based group-III nitride single crystal layer; and (4) removing the base substrate. The method provides a substrate which can be suitably used as a base substrate for producing an Al-based group-III nitride single crystal self-supporting substrate, of which surface is formed of a single crystal of an Al-based group-III nitride, and which is free from cracking and warpage.
摘要翻译：本发明是一种层叠体的制造方法，其特征在于，包括以下工序：（1）制作具有与构成所述Al系III族氮化物单晶层的材料不同的单晶的表面的基底基板要形成（2）在所制备的基板的单晶面上形成厚度为10nm〜1.5μm的Al系III族氮化物单晶层; （3）在Al系III族氮化物单晶层上形成比Al系III族氮化物单晶层厚100倍以上的非单晶层，而不会破坏先前获得的Al基团 -III氮化物单晶层; 和（4）去除基底。该方法提供了可以适合用作用于制造Al基III族氮化物单晶自支撑衬底的基底的衬底，其表面由Al基III族氮化物的单晶形成，并且没有开裂和翘曲。

9. 发明申请

US20110128981A1 P-TYPE GROUP III NITRIDE SEMICONDUCTOR AND GROUP III NITRIDE SEMICONDUCTOR ELEMENT 有权
标题翻译： P型III族氮化物半导体和III族氮化物半导体元件
公开(公告)号：US20110128981A1
公开(公告)日：2011-06-02
申请号：US12532564
申请日：2008-03-21
申请人： Toru Kinoshita , Hiroyuki Yanagi , Kazuya Takada
发明人： Toru Kinoshita , Hiroyuki Yanagi , Kazuya Takada
IPC分类号： H01S5/323 , H01L33/00
CPC分类号： H01L33/025 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01S5/3063 , H01S5/3211 , H01S5/32341 , H01S2301/173 , H01S2304/04
摘要： This invention provides a p-type group III nitride semiconductor, with good p-type properties, having a composition expressed by AlxGayInzN in which each of X, Y and Z indicates a rational number satisfying a relationship of X+Y+Z=1.0, even if Al content is as high as 1.0>X≧0.5. It is achieved that a proportion of a hole concentration at 30° C. to an acceptor impurity atom concentration is 0.001 or more in the p-type group III nitride semiconductor of the invention, by doping acceptor impurity atoms such as Mg in concentration of 5×1018 to 1×1020 cm−3 using the method, for example, MOCVD with attention not to incorporate an impurity atom other than the acceptor impurity atom or not to form dislocation in the crystal when producing the group III nitride semiconductor expressed by the above composition.
摘要翻译：本发明提供具有良好p型性质的p型III族氮化物半导体，具有由Al x Ga y In z N表示的组成，其中X，Y和Z各自表示满足X + Y + Z = 1.0的关系的有理数，即使Al含量高达1.0>X≥0.5。实现在本发明的p型III族氮化物半导体中，在30℃至受主杂质原子浓度的空穴浓度的比例为0.001以上，通过掺杂受体杂质原子如Mg的浓度为5 ×1018〜1×1020cm-3的方法，例如MOCVD，注意不要掺杂除受体杂质原子以外的杂质原子，或者在制造由上述表示的III族氮化物半导体时，在晶体中形成位错组成。

10. 发明授权

US08238391B2 P-type group III nitride semiconductor and group III nitride semiconductor element 有权
标题翻译： P型III族氮化物半导体和III族氮化物半导体元件
公开(公告)号：US08238391B2
公开(公告)日：2012-08-07
申请号：US12532564
申请日：2008-03-21
申请人： Toru Kinoshita , Hiroyuki Yanagi , Kazuya Takada
发明人： Toru Kinoshita , Hiroyuki Yanagi , Kazuya Takada
IPC分类号： H01S3/04 , H01S5/00
CPC分类号： H01L33/025 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01S5/3063 , H01S5/3211 , H01S5/32341 , H01S2301/173 , H01S2304/04
摘要： This invention provides a p-type group III nitride semiconductor, with good p-type properties, having a composition expressed by AlXGaYInZN in which each of X, Y and Z indicates a rational number satisfying a relationship of X+Y+Z=1.0, even if Al content is as high as 1.0>X≧0.5. It is achieved that a proportion of a hole concentration at 30° C. to an acceptor impurity atom concentration is 0.001 or more in the p-type group III nitride semiconductor of the invention, by doping acceptor impurity atoms such as Mg in concentration of 5×1018 to 1×1020 cm−3 using the method, for example, MOCVD with attention not to incorporate an impurity atom other than the acceptor impurity atom or not to form dislocation in the crystal when producing the group III nitride semiconductor expressed by the above composition.
摘要翻译：本发明提供一种p型III族氮化物半导体，具有良好的p型性质，具有由Al x Ga Y InZ N表示的组成，其中X，Y和Z各自表示满足X + Y + Z = 1.0的关系的有理数，即使Al含量高达1.0>X≥0.5。实现在本发明的p型III族氮化物半导体中，在30℃至受主杂质原子浓度的空穴浓度的比例为0.001以上，通过掺杂受体杂质原子如Mg的浓度为5 ×1018〜1×1020cm-3的方法，例如MOCVD，注意不要掺杂除受体杂质原子以外的杂质原子，或者在制造由上述表示的III族氮化物半导体时，在晶体中形成位错组成。

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