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1. 发明授权

US08878322B2 Perovskite manganese oxide thin film and manufacturing method therefor 有权
标题翻译：钙钛矿型锰氧化物薄膜及其制造方法
公开(公告)号：US08878322B2
公开(公告)日：2014-11-04
申请号：US13817127
申请日：2011-11-28
申请人： Yasushi Ogimoto
发明人： Yasushi Ogimoto
IPC分类号： H01L29/82 , H01L43/10 , H01L45/00 , C23C14/08 , C23C14/28 , C30B29/22 , C30B23/06 , H01L43/12
CPC分类号： H01L43/10 , C23C14/08 , C23C14/28 , C30B23/066 , C30B29/22 , H01L43/12 , H01L45/04 , H01L45/147 , H01L45/1625 , Y10T428/1259 , Y10T428/265
摘要： A perovskite manganese oxide thin film formed on a substrate that allows a first order phase transition and has A-site ordering. The thin film contains Ba and a rare earth element in the A sites of a perovskite crystal lattice and has an (m10) orientation for which m=2n, and 9≧n≧1. A method for manufacturing the film includes forming in a controlled atmosphere using laser ablation an atomic layer or thin film that assumes a pyramidal structure having oxygen-deficient sites in a plane containing the rare earth element and oxygen; and filling the oxygen-deficient sites with oxygen. The controlled atmosphere has an oxygen partial pressure controlled to a thermodynamically required value for creating oxygen deficiencies and contains a gas other than oxygen, and has a total pressure that is controlled to a value at which the A sites have a fixed compositional ratio.
摘要翻译：形成在基板上的钙钛矿锰氧化物薄膜，其允许一阶相变并具有A位点排序。该薄膜在钙钛矿晶格的A位置含有Ba和稀土元素，并且具有m = 2n，且9≥n≥1的（m10）取向。制造薄膜的方法包括在受控气氛中使用激光烧蚀来形成在含有稀土元素和氧的平面中具有缺氧部位的金字塔形结构的原子层或薄膜; 并用氧填充缺氧部位。受控气氛的氧分压被控制成用于产生氧缺乏的热力学要求值并且包含除氧之外的气体，并且具有被控制为A位置具有固定组成比的值的总压力。

2. 发明申请

US20130337228A1 CRYSTALLINE SUBSTANCE, SUBSTRATE, AND METHOD FOR PRODUCING CRYSTALLINE SUBSTANCE 有权
标题翻译：晶体物质，基板和生产晶体物质的方法
公开(公告)号：US20130337228A1
公开(公告)日：2013-12-19
申请号：US14002587
申请日：2012-03-02
申请人： Yasushi Ogimoto
发明人： Yasushi Ogimoto
IPC分类号： C30B1/04 , C30B29/32
CPC分类号： C30B1/04 , B82Y30/00 , C01P2002/34 , C04B2235/768 , C30B29/32 , C30B33/02 , H01L21/02197 , Y10T428/24355
摘要： The present invention provides a crystalline substance that has an uneven structure extending along the direction of a crystal axis. An aspect of the present invention provides a crystalline substance 1, which has a surface 10L that exposes an oxide crystal thereon and extends in a direction of a crystal axis of the oxide crystal, wherein the surface 10L has an uneven structure that is configured by faces 11L to 14L extending in at least three orientations along the crystal axis.
摘要翻译：本发明提供了具有沿着晶轴方向延伸的不均匀结构的结晶物质。本发明的一个方面提供了一种结晶物质1，其具有在其上暴露氧化物晶体并在氧化物晶体的晶轴方向上延伸的表面10L，其中表面10L具有由面部构成的不均匀结构 11L至14L沿着晶轴至少沿三个取向延伸。

3. 发明授权

US08456896B2 Magnetoresistance element and storage device using the same 有权
标题翻译：磁阻元件及使用其的存储装置
公开(公告)号：US08456896B2
公开(公告)日：2013-06-04
申请号：US13165782
申请日：2011-06-21
申请人： Michiya Yamada , Yasushi Ogimoto
发明人： Michiya Yamada , Yasushi Ogimoto
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/161 , G11C11/1659 , H01F10/126 , H01F10/325 , H01F10/3254 , H01F10/3286 , H01L27/224 , H01L43/10 , H01L43/12
摘要： A magnetic memory element having a memory cell of size 4F2 is provided that realizes a crosspoint-type memory. In the magnetic memory element, a first magnetic layer, a third magnetic layer (spin polarization enhancement layer), an intermediate layer, a fourth magnetic layer (spin polarization enhancement layer), and a second magnetic layer are stacked in order. The intermediate layer is made of an insulating material or a nonmagnetic material. The second magnetic layer is composed of a ternary alloy of gadolinium, iron and cobalt, a binary alloy of gadolinium and cobalt, or a binary alloy of terbium and cobalt. Alternatively, the first magnetic layer is composed of a ternary alloy of terbium, iron and cobalt, or a binary alloy of terbium and cobalt.
摘要翻译：提供具有尺寸为4F2的存储单元的磁存储元件，其实现交叉点型存储器。在磁存储元件中，按顺序堆叠第一磁性层，第三磁性层（自旋极化增强层），中间层，第四磁性层（自旋极化增强层）和第二磁性层。中间层由绝缘材料或非磁性材料制成。第二磁性层由钆，铁和钴的三元合金，钆和钴的二元合金或铽和钴的二元合金组成。或者，第一磁性层由铽，铁和钴的三元合金或铽和钴的二元合金构成。

4. 发明授权

US08411395B2 Spin valve element and method of driving same 有权
标题翻译：自旋阀元件及其驱动方法
公开(公告)号：US08411395B2
公开(公告)日：2013-04-02
申请号：US12739740
申请日：2008-08-28
申请人： Haruo Kawakami , Yasushi Ogimoto , Eiki Adachi
发明人： Haruo Kawakami , Yasushi Ogimoto , Eiki Adachi
IPC分类号： G11B2005/3996 , G11B5/012
CPC分类号： H01F10/325 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01L43/08 , H01L43/12 , H03B15/006 , H03C1/08
摘要： A method for driving a spin valve element, including passing driving current through the spin valve element to generate an oscillation signal, and performing amplitude modulation of the driving current at a frequency lower than the oscillation frequency of oscillation signals. This amplitude modulation can be ON-OFF modulation, and the interval ton in the conducting state of the ON-OFF modulation is made to satisfy the relation ton
摘要翻译：一种用于驱动自旋阀元件的方法，包括使驱动电流通过自旋阀元件以产生振荡信号，并且以低于振荡信号的振荡频率的频率执行驱动电流的幅度调制。该幅度调制可以是ON-OFF调制，并且使ON-OFF调制的导通状态下的间隔ton满足关系ton

5. 发明申请

US20110143166A1 SPIN-VALVE RECORDING ELEMENT AND STORAGE DEVICE 有权
标题翻译：旋转阀记录元件和存储装置
公开(公告)号：US20110143166A1
公开(公告)日：2011-06-16
申请号：US12737118
申请日：2008-09-05
申请人： Haruo Kawakami , Yasushi Ogimoto
发明人： Haruo Kawakami , Yasushi Ogimoto
IPC分类号： G11B5/66
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11C11/161 , G11C11/1675 , G11C11/5607 , G11C19/0808 , H01F10/325 , H01F10/3254 , H01F10/3286 , Y10T428/1107 , Y10T428/1143
摘要： A spin-valve element has a pair of ferromagnetic layers having mutually different coercive forces, sandwiching an insulating layer or a nonmagnetic layer therebetween. The in-plane shape of the spin-valve element is substantially circular in shape but is provided, in the peripheral portion, with a plurality of cutouts NS, NW, NE, NN. Preferably, the shape of at least one cutout be made different from that of others. Moreover, a storage device that employs such a spin-valve element is provided.
摘要翻译：自旋阀元件具有一对具有相互不同的矫顽力的铁磁层，其间夹有绝缘层或非磁性层。自旋阀元件的平面形状基本上是圆形的，但是在周边部分中设置有多个切口NS，NW，NE，NN。优选地，至少一个切口的形状与其他切口的形状不同。此外，提供了采用这种自旋阀元件的存储装置。

6. 发明授权

US07924609B2 Spin valve element driving method and spin valve element 有权
标题翻译：自旋阀元件驱动方式和自旋阀元件
公开(公告)号：US07924609B2
公开(公告)日：2011-04-12
申请号：US12809550
申请日：2008-08-28
申请人： Haruo Kawakami , Yasushi Ogimoto
发明人： Haruo Kawakami , Yasushi Ogimoto
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , B82Y25/00 , H01F10/325 , H01F10/3254 , H01F10/3286 , H01F10/329 , H03B15/006
摘要： A spin valve element driving method, and a spin valve element employing such a method, for causing microwave oscillation in a spin valve element. The spin valve element includes an intermediate layer and a pair of ferromagnetic layers including a fixed layer and a free layer sandwiching the intermediate layer, the fixed layer having a higher coercivity than the free layer, and being magnetized in a direction substantially perpendicular to a film plane thereof. The method includes a driving step of passing current from one of the pair of ferromagnetic layers to the other through the intermediate layer.
摘要翻译：自旋阀元件驱动方法和采用这种方法的自旋阀元件，用于在自旋阀元件中引起微波振荡。自旋阀元件包括中间层和一对铁磁层，其包括夹持中间层的固定层和自由层，固定层具有比自由层更高的矫顽力，并且在基本垂直于膜的方向上被磁化它的平面。该方法包括将电流从一对铁磁层中的一个通过中间层传递到另一个的驱动步骤。

7. 发明授权

US06667146B1 Optical recording medium and reproducing method therefor 失效
标题翻译：光记录介质及其再现方法
公开(公告)号：US06667146B1
公开(公告)日：2003-12-23
申请号：US09632655
申请日：2000-08-04
申请人： Yasushi Ogimoto , Kenji Nakanishi , Hiroshi Fuji , Kunio Kojima , Hiroyuki Katayama
发明人： Yasushi Ogimoto , Kenji Nakanishi , Hiroshi Fuji , Kunio Kojima , Hiroyuki Katayama
IPC分类号： G11B724
CPC分类号： G11B7/252 , B82Y10/00 , G11B7/24 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , G11B2007/25706 , G11B2007/2571 , G11B2007/25715 , G11B2007/25716 , Y10S430/146
摘要： An optical recording medium includes a recording layer and a mask layer on a substrate. The mask layer is formed of a material whose light transmittance is decreased by light irradiation and is increased by heating.
摘要翻译：光记录介质包括在基板上的记录层和掩模层。掩模层由光照射下的透光率降低并通过加热而增加的材料形成。

8. 发明授权

US06603619B1 Magnetic storage medium and heat assisted recording and reproduction method 有权
标题翻译：磁存储介质和热辅助记录和再现方法
公开(公告)号：US06603619B1
公开(公告)日：2003-08-05
申请号：US09479255
申请日：2000-01-07
申请人： Kunio Kojima , Yasushi Ogimoto , Shinzo Sawamura , Hiroyuki Katayama
发明人： Kunio Kojima , Yasushi Ogimoto , Shinzo Sawamura , Hiroyuki Katayama
IPC分类号： G11B502
CPC分类号： G11B5/74 , G11B5/64 , G11B2005/0016 , G11B2005/0018 , G11B2005/0021
摘要： A magnetic storage medium includes a magnetic storage medium that exhibits a magnetic compensation temperature specified higher than room temperature to minimize effects of heat generated by a head using magneto-resistance effect. In a heat assisted recording and reproduction method using such a magnetic storage medium, during reproduction, the S/N ratio in a reproduction signal is enhanced by optimizing the bias current applied to the head using magneto-resistance effect. A magnetic storage medium and a heat assisted recording and reproduction method using such a magnetic storage medium whereby information is magnetically recorded and reproduced by heating a read-out domain are offered that enables signal reproduction with a good S/N ratio despite possible use of a head exhibiting magneto-resistance effect.
摘要翻译：磁存储介质包括表现出高于室温的磁补偿温度的磁存储介质，以最小化使用磁阻效应的磁头所产生的热的影响。在使用这种磁存储介质的热辅助记录和再现方法中，在再现期间，通过使用磁阻效应优化施加到磁头的偏置电流来增强再现信号中的S / N比。提供使用这样的磁存储介质的磁存储介质和热辅助记录和再现方法，其中信息通过加热读出域磁记录和再现，其使得能够以良好的S / N比进行信号再现，尽管可能使用头显示磁阻效应。

9. 发明授权

US06367924B1 Thermally assisted magnetic recording medium 有权
标题翻译：热辅助磁记录介质
公开(公告)号：US06367924B1
公开(公告)日：2002-04-09
申请号：US09481304
申请日：2000-01-11
申请人： Junichi Sato , Yasushi Ogimoto , Kunio Kojima , Masaki Hamamoto , Hiroyuki Katayama , Shinzo Sawamura
发明人： Junichi Sato , Yasushi Ogimoto , Kunio Kojima , Masaki Hamamoto , Hiroyuki Katayama , Shinzo Sawamura
IPC分类号： B41J201
CPC分类号： G11B11/10584 , G11B5/72 , G11B11/10586 , G11B13/045 , G11B2005/0002 , G11B2005/0005 , G11B2005/0021 , Y10T428/24802
摘要： The present invention provides a thermally assisted magnetic recording medium consists of a recording region for recording information including a recording layer and a carbon nitride film provided on a side from which light is incident with respect to the recording layer, wherein the recording region is locally heated using light as a heat source for magnetically recording and reproducing information.
摘要翻译：本发明提供了一种热辅助磁记录介质，由用于记录信息的记录区域组成，该记录区域包括记录层和设置在相对于记录层入射的一侧的碳氮化物膜，其中记录区域被局部加热使用光作为用于磁记录和再现信息的热源。

10. 发明授权

US06208789B1 Probe, method of its manufacturing, and probe-type memory 有权
标题翻译：探针，其制造方法和探针型记忆
公开(公告)号：US06208789B1
公开(公告)日：2001-03-27
申请号：US09463184
申请日：2000-01-21
申请人： Yasushi Ogimoto
发明人： Yasushi Ogimoto
IPC分类号： G02B602
CPC分类号： G01Q60/22 , G02B6/241
摘要： A probe comprising a core (2) having a first end part (2a) on which light from a light source is incident and a second end part (2b) with a diameter smaller than a wavelength of the incident light and a cladding (1) covering the core (2). A thin nitride film (3) made of at least one nitride selected from titanium nitride, zirconium nitride, and hafnium nitride is formed on a surface of the core (2) on the side of the second end part (2b) except the first and second end parts (2a) and (2b). The thin nitride film (3) has a high reflectivity for light with a wavelength of longer than 600 nm and the incident light does not leak out of the probe and reaches the tip of the probe, so that the intensity of the light emitted from the tip of the probe is improved. When the probe is used in a probe-type memory, high density recording with an excellent signal quality (S/N) can be realized.
摘要翻译：一种探针，包括具有第一端部（2a）的芯体（2），来自光源的光入射到所述第一端部（2a），以及直径小于入射光的波长的第二端部（2b）和包层（1）覆盖核心（2）。在第二端部（2b）的除了第一和第二端部的一侧的芯（2）的表面上形成由氮化钛，氮化锆和氮化铪中的至少一种氮化物制成的薄氮化物膜（3）第二端部（2a）和（2b）。薄氮化物膜（3）对于波长超过600nm的光具有高反射率，并且入射光不会从探针中泄漏并到达探针的尖端，使得从提高探头尖端。当探针用于探针型存储器时，可以实现具有优异信号质量（S / N）的高密度记录。

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